JP6212050B2 - 高い光透過を備えた導電性物品 - Google Patents
高い光透過を備えた導電性物品 Download PDFInfo
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- JP6212050B2 JP6212050B2 JP2014549129A JP2014549129A JP6212050B2 JP 6212050 B2 JP6212050 B2 JP 6212050B2 JP 2014549129 A JP2014549129 A JP 2014549129A JP 2014549129 A JP2014549129 A JP 2014549129A JP 6212050 B2 JP6212050 B2 JP 6212050B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/36—Micro- or nanomaterials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Carbon And Carbon Compounds (AREA)
Description
この出願は、米国仮出願61/579320号(2011年12月22日に出願)に対する優先権を主張する。なおこの文献の開示は、参照により全体として組み込まれている。
本発明は概ね、可視光線に対する透過度が高い導電膜に関する。本発明はまた、関連物品、システム、及び方法に関する。
Claims (2)
- 透明導電性物品の製造方法であって、
第1の基材を用意するステップと、
導電性グリッドを前記基材上に形成して中間物品を用意するステップであって、前記グリッドが1マイクロメートル以下の厚さを有する、ステップと、
炭素粒子を含む乾燥組成物を前記中間物品に塗布するステップと、
前記中間物品上の前記乾燥組成物をバフがけして、前記グリッドの物理的完全性を維持しながら、前記グリッド及び前記基材を覆う透明炭素ナノ層を形成するステップと、
前記グリッド及び前記透明炭素ナノ層を前記第1の基材から第2の基材へ移すステップと、を含み、
前記炭素ナノ層が、ナノ結晶炭素中に埋め込まれたグラファイトプレートレットを含むモルフォロジーを有し、前記第2の基材が、透明な可撓性フィルムを含む、方法。 - 前記第1の基材が、剥離ライナーを含む、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161579320P | 2011-12-22 | 2011-12-22 | |
US61/579,320 | 2011-12-22 | ||
PCT/US2012/069091 WO2013096036A1 (en) | 2011-12-22 | 2012-12-12 | Electrically conductive article with high optical transmission |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017106089A Division JP6483755B2 (ja) | 2011-12-22 | 2017-05-30 | 高い光透過を備えた導電性物品 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015509260A JP2015509260A (ja) | 2015-03-26 |
JP2015509260A5 JP2015509260A5 (ja) | 2015-11-19 |
JP6212050B2 true JP6212050B2 (ja) | 2017-10-11 |
Family
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JP2014549129A Expired - Fee Related JP6212050B2 (ja) | 2011-12-22 | 2012-12-12 | 高い光透過を備えた導電性物品 |
JP2017106089A Expired - Fee Related JP6483755B2 (ja) | 2011-12-22 | 2017-05-30 | 高い光透過を備えた導電性物品 |
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JP2017106089A Expired - Fee Related JP6483755B2 (ja) | 2011-12-22 | 2017-05-30 | 高い光透過を備えた導電性物品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9668333B2 (ja) |
EP (1) | EP2795628B1 (ja) |
JP (2) | JP6212050B2 (ja) |
CN (1) | CN104321830B (ja) |
WO (1) | WO2013096036A1 (ja) |
Families Citing this family (14)
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US11287309B2 (en) | 2011-11-02 | 2022-03-29 | Seno Medical Instruments, Inc. | Optoacoustic component utilization tracking |
US11191435B2 (en) * | 2013-01-22 | 2021-12-07 | Seno Medical Instruments, Inc. | Probe with optoacoustic isolator |
US9733119B2 (en) | 2011-11-02 | 2017-08-15 | Seno Medical Instruments, Inc. | Optoacoustic component utilization tracking |
JP6047994B2 (ja) * | 2012-01-24 | 2016-12-21 | デクセリアルズ株式会社 | 透明導電性素子およびその製造方法、入力装置、電子機器、ならびに透明導電層の加工方法 |
EP2881970A1 (en) * | 2013-12-04 | 2015-06-10 | Fei Company | Method of producing a freestanding thin film of nano-crystalline carbon |
ITUA20162095A1 (it) * | 2016-03-30 | 2016-06-30 | Fabrizio Chiara | Procedimento di ricopertura di una superficie fotovoltaica e superficie fotovoltaica realizzata mediante un tale procedimento. |
CN105652487A (zh) * | 2016-04-20 | 2016-06-08 | 中国工程物理研究院上海激光等离子体研究所 | 金属纳米颗粒掺杂的液晶光开关及其制备方法和使用方法 |
JP6803191B2 (ja) * | 2016-10-14 | 2020-12-23 | 株式会社カネカ | 透明導電性フィルムの製造方法 |
EP3698181A4 (en) | 2017-10-20 | 2020-11-18 | Magic Leap, Inc. | CONFIGURATION OF OPTICAL LAYERS IN THE PRINT LITHOGRAPHY PROCESS |
KR20210105352A (ko) * | 2018-11-13 | 2021-08-26 | 캐즘 어드밴스드 머티리얼스, 인크. | 투명 전도성 회로 |
WO2020254912A1 (en) * | 2019-06-17 | 2020-12-24 | 3M Innovative Properties Company | Membrane assemblies |
US20220258203A1 (en) * | 2019-07-17 | 2022-08-18 | 3M Innovative Properties Company | Coating method and system to create patterned coating layers |
JP2021164011A (ja) * | 2020-03-30 | 2021-10-11 | 日東電工株式会社 | インピーダンス整合膜及び電波吸収体 |
CN116959783B (zh) * | 2023-05-25 | 2024-05-17 | 江苏纳美达光电科技有限公司 | 一种导电膜和触控电极及其制备方法 |
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US20140299364A1 (en) | 2014-10-09 |
CN104321830B (zh) | 2017-09-22 |
US9668333B2 (en) | 2017-05-30 |
EP2795628A1 (en) | 2014-10-29 |
WO2013096036A1 (en) | 2013-06-27 |
CN104321830A (zh) | 2015-01-28 |
WO2013096036A9 (en) | 2014-05-30 |
JP6483755B2 (ja) | 2019-03-13 |
EP2795628A4 (en) | 2015-08-19 |
JP2017199683A (ja) | 2017-11-02 |
EP2795628B1 (en) | 2020-02-19 |
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