JP2005538556A - 有機光起電素子およびその製造方法 - Google Patents
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- JP2005538556A JP2005538556A JP2004535002A JP2004535002A JP2005538556A JP 2005538556 A JP2005538556 A JP 2005538556A JP 2004535002 A JP2004535002 A JP 2004535002A JP 2004535002 A JP2004535002 A JP 2004535002A JP 2005538556 A JP2005538556 A JP 2005538556A
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- 238000013086 organic photovoltaic Methods 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229920000547 conjugated polymer Polymers 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
基材上に正電極(典型的には、ITO(酸化インジウム・スズ)が設けられている。その上には、アニオンとしてPSSを有する例えばPEDOTからなる正孔導電層が設けられている。次の層は、吸収体、通常は有機半導体(例えば、フラーレンとの共役ポリマーの混合物)である。この層の次には、負電極(例えば、Ca/AgまたはLiF/Al)が設けられている。しかしながら、個々の層、特に、各電極や共役ポリマーや受容体(PCBM、可溶性メタノフラーレン)は、上記の案とは異なるものであってもよい。
別の実施形態において、半導体層は、前記構造を平坦化するように施される。
光起電要素の少なくとも1つの層が構造を付与されていることにより、太陽電池への光の結合が高まる。この種の構造付与(Strukturierung)は、「光トラッピング」としても知られている。
ゴマー材料に対する分子の大きさに関していかなる限定を受けるものではなく、しかしながら代わりに、同様に「小分子」を使用することも全く可能である。
図1は光起電素子の層構造を示す。該層構造においては、構造が付与された基材が、付加的な輸送層によって再平坦化され、底部電極が平坦面に施されている。
図1において、基材1は、PETシートまたはガラス上のフォトレジスト層のいずれであってもよい。この基材は構造を付与されており、例えばTiO2などの高い屈折率を有する材料からなる付加的な層6によって、その構造がトレースされるように被覆され、その後、PETシートまたはガラス上のフォトレジスト層のいずれであってもよい透明材料からなる層7によって再平坦化される。その後、この基材上に標準的なセルを下から上へ、基材1が配置される側が光起電素子の光入射側である場合には、半透明(例えばITOからなる)に実装される底部電極2が最初にくるように処理される。本実施形態においては、その上には、例えばPEDOTからなる付加的な有機電極3aを設け、その上に、半導体層4および第2電極3bおよび/または5を設ける。
図3は、構造が付与されていない基材1が示しており、該基材には構造が付与された底部電極2が施されている。前記底部電極2には、その構造に追従する付加的な層3aが施
され、その構造が付与された表面には半導体層4が施されている。半導体層4は、前記構造を平坦化しており、それにより、付加的な層3bは半導体層4の平坦面に施されている。さらなる電極3bおよび上面電極5は図示した実施形態においては構造が付与されていない。
本発明は、素子の1つ以上の層に構造を付与することで、結合性(Einkopplung)を高めることにより、光の吸収性を高めた光起電素子を初めて示した。層の構造付与は、半導体層に機械的応力または熱的応力をかけることなく行われるため、損傷を与えることはない。
Claims (6)
- 基材と、正電極と、有機半導体と、負電極とを含む有機光起電素子であって、前記基材、および前記電極と前記半導体層との間の1つ以上の付加的な輸送層のうち少なくともいずれが、構造を付与されている有機光起電素子。
- 前記基材は構造が付与された可撓性シートである請求項1に記載の有機光起電素子。
- 前記基材および前記半導体層の上方または下方の付加的な層の少なくともいずれかが、構造を付与されている請求項1および2のいずれか1項に記載の有機光起電素子。
- 前記半導体層が施される下層の既存の構造を保持することによって、光起電素子の半導体層に構造を付与する方法。
- 前記半導体層は前記下層の構造を平坦化する請求項4に記載の方法。
- 前記構造を付与することは、付加的な層を導入することによって行われる請求項4および5のいずれか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10241204 | 2002-09-05 | ||
PCT/DE2003/002930 WO2004025747A2 (de) | 2002-09-05 | 2003-09-03 | Organisches photovoltaisches bauelement und herstellungsverfahren dazu |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005538556A true JP2005538556A (ja) | 2005-12-15 |
Family
ID=31983900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004535002A Pending JP2005538556A (ja) | 2002-09-05 | 2003-09-03 | 有機光起電素子およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060102891A1 (ja) |
EP (1) | EP1535353A2 (ja) |
JP (1) | JP2005538556A (ja) |
CN (1) | CN1682389A (ja) |
WO (1) | WO2004025747A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007005620A (ja) | 2005-06-24 | 2007-01-11 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2012234970A (ja) * | 2011-04-28 | 2012-11-29 | Mitsubishi Chemicals Corp | 太陽電池モジュール及びその製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101102133B1 (ko) * | 2004-10-27 | 2012-01-02 | 삼성전자주식회사 | 박막 트랜지스터의 제조방법 및 그 방법에 의해서 제조되는 박막 트랜지스터를 포함하는 표시소자 |
JP5023457B2 (ja) * | 2005-09-06 | 2012-09-12 | 大日本印刷株式会社 | 有機薄膜太陽電池 |
AU2007248170B2 (en) * | 2006-05-01 | 2012-08-16 | Arrowhead Center, Inc. | Fiber photovoltaic devices and applications thereof |
WO2008009428A1 (de) * | 2006-07-20 | 2008-01-24 | Leonhard Kurz Stiftung & Co. Kg | Solarzelle auf polymerbasis |
WO2010060145A1 (en) * | 2008-11-28 | 2010-06-03 | Securency International Pty Ltd | Nanoscale embossing of hetero-junction devices |
US8941006B2 (en) | 2011-02-25 | 2015-01-27 | Fina Technology, Inc. | Apparatus and method for extending polyolefin containing photovoltaic panel life span |
TWI430492B (zh) * | 2011-07-21 | 2014-03-11 | Nat Univ Tsing Hua | 具圖案化電極的有機太陽能電池 |
CN102956825B (zh) * | 2011-08-23 | 2016-06-01 | 岑尚仁 | 具图案化电极的有机太阳能电池 |
WO2013142870A1 (en) * | 2012-03-23 | 2013-09-26 | The University Of Akron | Broadband polymer photodetectors using zinc oxide nanowire as an electron-transporting layer |
US9256126B2 (en) | 2012-11-14 | 2016-02-09 | Irresistible Materials Ltd | Methanofullerenes |
US10177259B2 (en) * | 2013-06-17 | 2019-01-08 | Kaneka Corporation | Solar cell module and method for producing solar cell module |
US9748423B2 (en) * | 2014-01-16 | 2017-08-29 | Fundacio Institut De Ciencies Fotoniques | Photovoltaic device with fiber array for sun tracking |
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2003
- 2003-09-03 CN CNA038211556A patent/CN1682389A/zh active Pending
- 2003-09-03 JP JP2004535002A patent/JP2005538556A/ja active Pending
- 2003-09-03 US US10/525,058 patent/US20060102891A1/en not_active Abandoned
- 2003-09-03 EP EP03794811A patent/EP1535353A2/de not_active Withdrawn
- 2003-09-03 WO PCT/DE2003/002930 patent/WO2004025747A2/de active Application Filing
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JPH0766439A (ja) * | 1993-08-30 | 1995-03-10 | Mitsubishi Heavy Ind Ltd | 有機太陽電池装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007005620A (ja) | 2005-06-24 | 2007-01-11 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2012234970A (ja) * | 2011-04-28 | 2012-11-29 | Mitsubishi Chemicals Corp | 太陽電池モジュール及びその製造方法 |
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US20060102891A1 (en) | 2006-05-18 |
WO2004025747A2 (de) | 2004-03-25 |
WO2004025747A3 (de) | 2004-06-24 |
CN1682389A (zh) | 2005-10-12 |
EP1535353A2 (de) | 2005-06-01 |
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