JPH06511603A - 光電池 - Google Patents
光電池Info
- Publication number
- JPH06511603A JPH06511603A JP6504959A JP50495994A JPH06511603A JP H06511603 A JPH06511603 A JP H06511603A JP 6504959 A JP6504959 A JP 6504959A JP 50495994 A JP50495994 A JP 50495994A JP H06511603 A JPH06511603 A JP H06511603A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor material
- battery according
- poly
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 71
- -1 randanium oxide Chemical compound 0.000 claims description 52
- 239000002245 particle Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 229920000123 polythiophene Polymers 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229920000280 Poly(3-octylthiophene) Polymers 0.000 claims description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 4
- 229920001197 polyacetylene Polymers 0.000 claims description 4
- 229920000767 polyaniline Polymers 0.000 claims description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- 229920000000 Poly(isothianaphthene) Polymers 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229920000323 polyazulene Polymers 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 2
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims description 2
- 229910052981 lead sulfide Inorganic materials 0.000 claims description 2
- 229940056932 lead sulfide Drugs 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- RCYJPSGNXVLIBO-UHFFFAOYSA-N sulfanylidenetitanium Chemical compound [S].[Ti] RCYJPSGNXVLIBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims 2
- TXWSZJSDZKWQAU-UHFFFAOYSA-N 2,9-dimethyl-5,12-dihydroquinolino[2,3-b]acridine-7,14-dione Chemical compound N1C2=CC=C(C)C=C2C(=O)C2=C1C=C(C(=O)C=1C(=CC=C(C=1)C)N1)C1=C2 TXWSZJSDZKWQAU-UHFFFAOYSA-N 0.000 claims 1
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 claims 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 claims 1
- 229910018626 Al(OH) Inorganic materials 0.000 claims 1
- 241000125205 Anethum Species 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 241000723368 Conium Species 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 125000003963 dichloro group Chemical group Cl* 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 150000004678 hydrides Chemical class 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- 229920000728 polyester Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229940071182 stannate Drugs 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 241000577218 Phenes Species 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GQEZCXVZFLOKMC-UHFFFAOYSA-N 1-hexadecene Chemical group CCCCCCCCCCCCCCC=C GQEZCXVZFLOKMC-UHFFFAOYSA-N 0.000 description 1
- GZKPUYJFADMBGO-UHFFFAOYSA-N 5,10,15,20-tetrapyridin-3-yl-21,23-dihydroporphyrin Chemical compound c1cc2nc1c(-c1cccnc1)c1ccc([nH]1)c(-c1cccnc1)c1ccc(n1)c(-c1cccnc1)c1ccc([nH]1)c2-c1cccnc1 GZKPUYJFADMBGO-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 240000008574 Capsicum frutescens Species 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- NSGUAPUTYLKWFD-UHFFFAOYSA-N [Pb+2].[S-2].[Zn+2].[S-2] Chemical compound [Pb+2].[S-2].[Zn+2].[S-2] NSGUAPUTYLKWFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 230000036755 cellular response Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SMFLPHCNEUPBKV-UHFFFAOYSA-N n,n-dimethyl-4-[2-(4h-pyran-2-yl)ethenyl]aniline Chemical compound C1=CC(N(C)C)=CC=C1C=CC1=CCC=CO1 SMFLPHCNEUPBKV-UHFFFAOYSA-N 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- OMQSJNWFFJOIMO-UHFFFAOYSA-J zirconium tetrafluoride Chemical compound F[Zr](F)(F)F OMQSJNWFFJOIMO-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
Description
Claims (25)
- 1.その上に第1の電極(6)と、前記第1の電極(6)からその接合面におい て1つの能動接合面(J)を有する半導電性材料の少なくとも1つの第1の層( 14)を含む複数の層(14、16;14、24、16)によって絶縁された第 2の電極(10)と、を有する支持面(4)を有する基板(2)からなる光電池 (1)であって、 前記能動接合面(J)がその投射面積よりも大である展開面積を有することを特 徴とする光電池(1)。
- 2.前記能動接合面(S)が20より大である粗さ係数を有することを特徴とす る請求項1に記載の電池。
- 3.前記支持面(4)がその投射面積よりも大である展開面積を有し、前記他の 層(14、16;14、24、16)および前記電極(6、10)が前記支持面
- (4)上に連続的に配置されることを特徴とする請求項1あるいは2に記載の電 池。 4、前記第1の電極(6)がその投射面積よりも大である展開面積を有し、前記 他の層(14、16;14、24、16)および前記第2の電極(10)が前記 第1の電極(6)上に連続的に配置されることを特徴とする請求項1あるいは2 に記載の電池。
- 5.前記第1の電極(6)がコロイド状粒子(20)によって形成された層であ ることを特徴とする請求項4に記載の電池。
- 6.半導体材料の前記第1の層(14)がその投射面積よりも大である展開面積 を有し、前記他の層(16;16、24)および前記第2の電極(10)が半導 体材料の前記第1の層(14)上に連続的に配置されていることを特徴とする請 求項1あるいは2に記載の電池。
- 7.半導体材料の前記第1の層(14)がコロイド状粒子(20)によって形成 された層であることを特徴とする請求項6に記載の電池。
- 8.それぞれ前記第1の電極(6)および半導体材料の前記第1の層(14)を 形成するコロイド状粒子(20)が1から200ナノメートルの間の直径を有す ることを特徴とする請求項5あるいは7に記載の電池。
- 9.焼結されたコロイド状粒子(20)によって形成される層が0.1から20 マイクロメートルの厚さを有することを特徴とする請求項5あるいは7に記載の 電池。
- 10.前記複数の層(14、16;14、24、16)が、半導体材料である前 記第1の層(14)とは別に、半導体材料である前記第1の層(14)と前記第 2の電極(10)との間に配置される導電体層(16)を有することを特徴とす る請求項1から9のいずれか1項に記載の電池。
- 11.前記複数の層(14、16;14、24、16)が、半導体材料である前 記第1の層(14)と前記導電体層(16)との間に配置される絶縁体層(26 )をさらに有する請求項10に記載の電池。
- 12.前記第2の電極が前記導電体層(16)によって形成されることを特徴と する請求項10あるいは11に記載の光電池。
- 13.前記複数の層(14、16;14、24、16)が、半導体材料である前 記第1の層(14)とは別に、導電性が半導体材料である前記第1の層(14) の導電性とは相違する型である半導体材料の第2の層(16)を有し、この第2 の層(16)が前記第1の層と前記第2の電極(10)との間に配置されること を特徴とする請求項1から9のいずれか1項に記載の電池。
- 14.前記複数の層(14、16;14、24、16)が、半導体材料である前 記第1の層(14)と半導体材料である前記第2の層(16)との間に配置され る絶縁体の層(26)をさらに有することを特徴とする請求項13に記載の電池 。
- 15.前記第1の電極(6)が、フッ素、アンチモンあるいはひ素によってドー プされたスズ酸化物、アルミニウムすず酸塩、およびアルミニウムによってドー プされた亜鉛からなるグループから選択された材料によって製造されることを特 徴とする請求項1から14のいずれか1項に記載の電池。
- 16.半導体材料である前記第1の層(14)が、無機半導体材料で製造される ことを特徴とする請求項1から12のいずれか1項に記載の電池。
- 17.半導体材料である前記第1の層(14)および/または前記第2の層(1 6)が、無機半導体材料で製造されることを特徴とする請求項13あるいは14 に記載の電池。
- 18.半導体材料である前記第1の層(14)が、有機半導体材料で製造される ことを特徴とする請求項1から15のいずれか1項に記載の電池。
- 19.半導体材料である前記第1の層(14)および/または前記第2の層(1 6)が、有機半導体材料で製造されることを特徴とする請求項1から15のいず れか1項に記載の電池。
- 20.半導体材料である前記第1の層(14)および/または前記第2の層(1 6)が、遷移元素の導電性酸化物、最新の周期表の13および14列の元素の導 電性酸化物、および導電性ランタニド酸化物から構成される第1のグループ、第 1の2あるいはいくつかの酸化物の混合物で形成される混合された半導電性酸化 物から構成される第2のグループ、最新の周期表の1および2列の元素の酸化物 を有する第1のグループの1つあるいはいくつかの酸化物の混合物で形成される 混合された半導電性酸化物から構成される第3のグループ、およびシリコン、シ リコン水素化物、シリコン炭化物、ゲルマニウム、硫化カドニウム、テルル化カ ドニウム、硫化亜鉛、硫化鉛、硫化鉄、セレン化亜鉛、ガリウム砒素、リン化イ ンジウム、リン化カドニウム、フッ化チタニウム、窒化チタニウム、フッ化ジル コニウム、窒化ジルコニウム、ドープされたダイアモンド、チオシアン酸銅およ び、純粋なおよび混合された黄銅鉱からなる半導体グループから構成される第4 のグループから選択された半導体材料から製造されることを特徴とする請求項1 7に記載の電池。
- 21.半導体材料が、酸化チタニュウム、酸化ランダニウム、酸化ジルコニウム 、酸化ニオビウム、酸化タングステン、酸化ストロンチウム、酸化カルシウム/ チタニウム、硫化チタニウムおよびニオブ酸カリウム(potassium n iobiate)から選択されることを特徴とする請求項18に記載の電池。
- 22.半導体材料である前記第1の層(14)および/または前記第2の層(1 6)が、フタロシアニン、2,9−ジメチルキナクリドン、1,1−ビス(4− ジ−p−トリルアミノフェニール)シクロヘキサン、フタロシアニンビスナフト ハロシアニン、ポリ(N−ビニルカルバゾール)、ポリアントラセン、ポリフェ ノール、ポリシラン、ポリ(p−フェニレン)ビニレン、ポリフィリン、ペリレ ンおよびその誘導体、ポリ(ベンゾ〔C〕チオフェン)=ポリ(イソチアナフテ ン)、ポリチオフェン、ポリ(3−メチルチオフェン)、ポリ(3−オクチルチ オフェン)、ポリアニリン、ポリ(チオフェン)、ポリ(チオフェン)ビニレン 、ポリアセチレン、ポリアズレンおよびジアセチレンからなるドープされたおよ び/またはドープされない半導体材料のグループから選択された半導体材料から 製造されることを特徴とする請求項19に記載の電池。
- 23.半導体材料である前記第1の層(14)および/または前記第2の層(1 6)が、H2Pc、O2によってドープされたMgPc、CuPc、ZnPc、 FePc、SiPc、NiPc、Al(C1)Pc、Al(OH)Pc、ジクロ ロシアンキノンによってドープされたLuPc2、テトラ−4−ターーブチルフ タリシアニン、シリコンジクロライド、シリコンジクロライド、LuPc22, 2′,6,6′−テトラフェニル−4,4′(p−ジメチルアミノスチリル)4 H−ピラン、および5,10.15,20−テトラ(3−ピリジル)ポルフィリ ン、LuPcおよびNiPc:I2からなる半導体材料のグループから選択され た半導体材料から製造されることを特徴とする請求項22に記載の電池。
- 24.導電性層(16)が、ビニル(ベンゾ〔C〕チオフェン)=ポリ(イソチ アンナフテン)、ポリチオフェン、ポリ(3−メチルチオフェン)、ポリ(3− オクチルチオフェン)、ポリアニリン、ポリ(p−フェニレン)、ポリ(チオフ ェン)ビニレン、ポリアセチレン、ポリアズレン、ジアセチレン、ドープされた およびドープなしのフタロシアニンからなる第1のグループ、および白金、ルテ ニウム、ロジウム、パラジウム、イリジウム、銀、オスミウム、金、白金、アル ミニウム、インジウム、Mgおよび最新の周期表の8から10列の元素の導電性 酸化物からなる第2のグループで形成されるグループから選択された材料によっ て製造されることを特徴とする請求項10に記載の光電池。
- 25.絶縁材料の層(26)が、アルミニウム酸化物、シリコン酸化物、ジルコ ニウム酸化物、イットリウム酸化物、ランタン酸化物、アルミニウムオキシフッ 化物、立方晶窒化ボロン、ダイアモンドからなる第1のグループ、および3.5 eV以上より大である禁止帯を有する全属酸化物からなる第2のグループ、ある いはポリイミド、ポリメタメチルアクリル、ポリエチレン、ポリプロピレン、ポ リスチレン、およびポリシランからなる第3のグループから選択された材料によ って製造されることを特徴とする請求項11に記載の電池。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR92/09507 | 1992-07-29 | ||
FR929209507A FR2694451B1 (fr) | 1992-07-29 | 1992-07-29 | Cellule photovoltaïque. |
PCT/EP1993/001980 WO1994003930A1 (fr) | 1992-07-29 | 1993-07-24 | Cellule photovoltaique |
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Publication Number | Publication Date |
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JPH06511603A true JPH06511603A (ja) | 1994-12-22 |
JP3391454B2 JP3391454B2 (ja) | 2003-03-31 |
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AU (1) | AU672421B2 (ja) |
DE (1) | DE69311289T2 (ja) |
ES (1) | ES2105299T3 (ja) |
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CA1209681A (en) * | 1982-08-04 | 1986-08-12 | Exxon Research And Engineering Company | Optically enhanced thin film photovoltaic device using lithography defined random surfaces |
US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
JPS60195979A (ja) * | 1984-03-17 | 1985-10-04 | Semiconductor Energy Lab Co Ltd | 薄膜太陽電池 |
US4732621A (en) * | 1985-06-17 | 1988-03-22 | Sanyo Electric Co., Ltd. | Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer |
JPH0663829B2 (ja) * | 1985-10-16 | 1994-08-22 | 三洋電機株式会社 | 色センサ |
JPS62198169A (ja) * | 1986-02-25 | 1987-09-01 | Fuji Electric Corp Res & Dev Ltd | 太陽電池 |
JPS62247574A (ja) * | 1986-04-18 | 1987-10-28 | Sanyo Electric Co Ltd | 光起電力装置 |
-
1992
- 1992-07-29 FR FR929209507A patent/FR2694451B1/fr not_active Expired - Fee Related
-
1993
- 1993-07-21 ZA ZA935284A patent/ZA935284B/xx unknown
- 1993-07-24 WO PCT/EP1993/001980 patent/WO1994003930A1/fr active IP Right Grant
- 1993-07-24 AU AU47025/93A patent/AU672421B2/en not_active Ceased
- 1993-07-24 ES ES93917648T patent/ES2105299T3/es not_active Expired - Lifetime
- 1993-07-24 JP JP50495994A patent/JP3391454B2/ja not_active Expired - Lifetime
- 1993-07-24 US US08/204,395 patent/US5482570A/en not_active Expired - Lifetime
- 1993-07-24 KR KR1019940700851A patent/KR940702649A/ko not_active Application Discontinuation
- 1993-07-24 DE DE69311289T patent/DE69311289T2/de not_active Expired - Lifetime
- 1993-07-24 EP EP93917648A patent/EP0606453B1/fr not_active Expired - Lifetime
- 1993-07-28 CN CN93116580A patent/CN1032994C/zh not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005538556A (ja) * | 2002-09-05 | 2005-12-15 | コナルカ テクノロジーズ インコーポレイテッド | 有機光起電素子およびその製造方法 |
JP2005538573A (ja) * | 2002-09-05 | 2005-12-15 | ナノシス・インク. | ナノ構造及びナノ複合材をベースとする組成物 |
JP2007533165A (ja) * | 2004-04-13 | 2007-11-15 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | バルクヘテロ接合を有する光電子装置の製造方法 |
JP2013214777A (ja) * | 2004-04-13 | 2013-10-17 | Trustees Of Princeton Univ | バルクヘテロ接合を有する光電子装置の製造方法 |
JP2015073124A (ja) * | 2004-04-13 | 2015-04-16 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | バルクヘテロ接合を有する光電子装置の製造方法 |
JP2008021958A (ja) * | 2006-07-11 | 2008-01-31 | Trustees Of Princeton Univ | ナノスケールでモルフォロジー制御された粗い電極上に成長した有機感光性電池 |
WO2012090971A1 (ja) * | 2010-12-27 | 2012-07-05 | 住友化学株式会社 | 光電変換素子及びそれに用いられる組成物 |
JPWO2014087586A1 (ja) * | 2012-12-07 | 2017-01-05 | パナソニックIpマネジメント株式会社 | 光電変換素子 |
JP2014236181A (ja) * | 2013-06-05 | 2014-12-15 | シャープ株式会社 | 光電変換素子 |
Also Published As
Publication number | Publication date |
---|---|
JP3391454B2 (ja) | 2003-03-31 |
US5482570A (en) | 1996-01-09 |
EP0606453A1 (fr) | 1994-07-20 |
FR2694451B1 (fr) | 1994-09-30 |
AU4702593A (en) | 1994-03-03 |
CN1032994C (zh) | 1996-10-09 |
DE69311289T2 (de) | 1998-01-15 |
ES2105299T3 (es) | 1997-10-16 |
DE69311289D1 (de) | 1997-07-10 |
ZA935284B (en) | 1994-04-21 |
FR2694451A1 (fr) | 1994-02-04 |
KR940702649A (ko) | 1994-08-20 |
CN1086049A (zh) | 1994-04-27 |
EP0606453B1 (fr) | 1997-06-04 |
WO1994003930A1 (fr) | 1994-02-17 |
AU672421B2 (en) | 1996-10-03 |
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