ZA935284B - Photovoltaic cell - Google Patents
Photovoltaic cellInfo
- Publication number
- ZA935284B ZA935284B ZA935284A ZA935284A ZA935284B ZA 935284 B ZA935284 B ZA 935284B ZA 935284 A ZA935284 A ZA 935284A ZA 935284 A ZA935284 A ZA 935284A ZA 935284 B ZA935284 B ZA 935284B
- Authority
- ZA
- South Africa
- Prior art keywords
- photovoltaic cell
- photovoltaic
- cell
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/351—Metal complexes comprising lanthanides or actinides, e.g. comprising europium
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR929209507A FR2694451B1 (fr) | 1992-07-29 | 1992-07-29 | Cellule photovoltaïque. |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA935284B true ZA935284B (en) | 1994-04-21 |
Family
ID=9432499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA935284A ZA935284B (en) | 1992-07-29 | 1993-07-21 | Photovoltaic cell |
Country Status (11)
Country | Link |
---|---|
US (1) | US5482570A (xx) |
EP (1) | EP0606453B1 (xx) |
JP (1) | JP3391454B2 (xx) |
KR (1) | KR940702649A (xx) |
CN (1) | CN1032994C (xx) |
AU (1) | AU672421B2 (xx) |
DE (1) | DE69311289T2 (xx) |
ES (1) | ES2105299T3 (xx) |
FR (1) | FR2694451B1 (xx) |
WO (1) | WO1994003930A1 (xx) |
ZA (1) | ZA935284B (xx) |
Families Citing this family (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070084506A1 (en) * | 2005-07-15 | 2007-04-19 | James Ryan | Diffraction foils |
US5663639A (en) * | 1994-01-18 | 1997-09-02 | Massachusetts Institute Of Technology | Apparatus and method for optical heterodyne conversion |
KR100237183B1 (ko) * | 1996-12-14 | 2000-01-15 | 정선종 | 금속-반도체 광소자 |
US6252156B1 (en) * | 1997-06-24 | 2001-06-26 | Fuji Xerox Co., Ltd. | Photosensitive semiconductor electrode, method of manufacturing photosensitive semiconductor electrode, and photoelectric converter using photosensitive semiconductor |
GB9806066D0 (en) | 1998-03-20 | 1998-05-20 | Cambridge Display Tech Ltd | Multilayer photovoltaic or photoconductive devices |
EP0954033A1 (de) * | 1998-04-29 | 1999-11-03 | Nunzio Dr. La Vecchia | Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung |
US6075203A (en) * | 1998-05-18 | 2000-06-13 | E. I. Du Pont Nemours And Company | Photovoltaic cells |
US6444189B1 (en) | 1998-05-18 | 2002-09-03 | E. I. Du Pont De Nemours And Company | Process for making and using titanium oxide particles |
DE19837365A1 (de) * | 1998-08-18 | 2000-03-02 | Forschungszentrum Juelich Gmbh | Solarzelle mit Clustern im aktiven Bereich |
AUPP699798A0 (en) * | 1998-11-06 | 1998-12-03 | Pacific Solar Pty Limited | Thin films with light trapping |
DE19905694A1 (de) * | 1998-11-27 | 2000-08-17 | Forschungszentrum Juelich Gmbh | Bauelement |
AUPP931799A0 (en) * | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
US6649824B1 (en) * | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
US6136966A (en) * | 1999-09-23 | 2000-10-24 | National Research Institute For Metals | Phthalocyanine radical anions and process for producing the same |
JP2001114533A (ja) * | 1999-10-20 | 2001-04-24 | Nippon Sheet Glass Co Ltd | 透明導電膜付きガラス板およびこれを用いたガラス物品 |
US6799076B2 (en) * | 1999-12-07 | 2004-09-28 | Greatbatch-Hittman, Inc. | Coated electrode and method of making a coated electrode |
KR100492039B1 (ko) * | 1999-12-27 | 2005-05-31 | 세이코 엡슨 가부시키가이샤 | 태양전지 및 태양전지 유닛 |
JP3300812B2 (ja) * | 2000-01-19 | 2002-07-08 | 独立行政法人産業技術総合研究所 | 光電変換素子 |
JP4477729B2 (ja) * | 2000-01-19 | 2010-06-09 | シャープ株式会社 | 光電変換素子及びそれを用いた太陽電池 |
US7186911B2 (en) | 2002-01-25 | 2007-03-06 | Konarka Technologies, Inc. | Methods of scoring for fabricating interconnected photovoltaic cells |
US20030192584A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Flexible photovoltaic cells and modules formed using foils |
US20050284513A1 (en) * | 2002-08-08 | 2005-12-29 | Christoph Brabec | Chip card comprising an integrated energy converter |
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US6913713B2 (en) | 2002-01-25 | 2005-07-05 | Konarka Technologies, Inc. | Photovoltaic fibers |
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US7351907B2 (en) * | 2002-01-25 | 2008-04-01 | Konarka Technologies, Inc. | Displays with integrated photovoltaic cells |
US20030192585A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Photovoltaic cells incorporating rigid substrates |
US6900382B2 (en) * | 2002-01-25 | 2005-05-31 | Konarka Technologies, Inc. | Gel electrolytes for dye sensitized solar cells |
US7205473B2 (en) * | 2002-01-25 | 2007-04-17 | Konarka Technologies, Inc. | Photovoltaic powered multimedia greeting cards and smart cards |
US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
SE0103740D0 (sv) * | 2001-11-08 | 2001-11-08 | Forskarpatent I Vaest Ab | Photovoltaic element and production methods |
US7414188B2 (en) * | 2002-01-25 | 2008-08-19 | Konarka Technologies, Inc. | Co-sensitizers for dye sensitized solar cells |
US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
EP1176646A1 (en) * | 2000-07-28 | 2002-01-30 | Ecole Polytechnique Féderale de Lausanne (EPFL) | Solid state heterojunction and solid state sensitized photovoltaic cell |
US7042029B2 (en) * | 2000-07-28 | 2006-05-09 | Ecole Polytechnique Federale De Lausanne (Epfl) | Solid state heterojunction and solid state sensitized photovoltaic cell |
DE60033038T2 (de) | 2000-11-24 | 2007-08-23 | Sony Deutschland Gmbh | Hybridsolarzelle mit thermisch abgeschiedener Halbleiteroxidschicht |
US20060008580A1 (en) * | 2000-11-24 | 2006-01-12 | Gabrielle Nelles | Hybrid solar cells with thermal deposited semiconductive oxide layer |
US6774300B2 (en) * | 2001-04-27 | 2004-08-10 | Adrena, Inc. | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure |
AUPR719801A0 (en) * | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Glass beads coating process |
US7259324B2 (en) * | 2001-12-05 | 2007-08-21 | Konarka Technologies, Inc. | Photovoltaic solar cell |
US7989695B2 (en) * | 2001-12-18 | 2011-08-02 | Steven Allen Carlson | Organic photovoltaic cells |
CN1643629A (zh) * | 2002-01-25 | 2005-07-20 | 科纳卡科技有限公司 | 光电池结构和材料 |
JP4979878B2 (ja) * | 2002-01-25 | 2012-07-18 | コナルカ テクノロジーズ インコーポレイテッド | 色素増感太陽電池の構造及び材料 |
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JP4392741B2 (ja) * | 2002-04-17 | 2010-01-06 | 日揮触媒化成株式会社 | 光電気セル |
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US20080283121A1 (en) * | 2002-05-07 | 2008-11-20 | Nanoptek Corporation | Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same |
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US7594982B1 (en) | 2002-06-22 | 2009-09-29 | Nanosolar, Inc. | Nanostructured transparent conducting electrode |
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EP1535353A2 (de) * | 2002-09-05 | 2005-06-01 | Siemens Aktiengesellschaft | Organisches photovoltaisches bauelement und herstellungsverfahren dazu |
JP2005538573A (ja) * | 2002-09-05 | 2005-12-15 | ナノシス・インク. | ナノ構造及びナノ複合材をベースとする組成物 |
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EP1606846B1 (en) * | 2003-03-24 | 2010-10-27 | Konarka Technologies, Inc. | Photovoltaic cell with mesh electrode |
US7511217B1 (en) | 2003-04-19 | 2009-03-31 | Nanosolar, Inc. | Inter facial architecture for nanostructured optoelectronic devices |
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EP1473745A1 (en) | 2003-04-30 | 2004-11-03 | Ecole Polytechnique Federale De Lausanne (Epfl) | Dye sensitized solar cell |
US7462774B2 (en) * | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
WO2005001900A2 (en) | 2003-06-12 | 2005-01-06 | Sirica Corporation | Steady-state-non-equilibrium distribution of free carriers and photon energy up-conversion using same |
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JPS62247574A (ja) * | 1986-04-18 | 1987-10-28 | Sanyo Electric Co Ltd | 光起電力装置 |
-
1992
- 1992-07-29 FR FR929209507A patent/FR2694451B1/fr not_active Expired - Fee Related
-
1993
- 1993-07-21 ZA ZA935284A patent/ZA935284B/xx unknown
- 1993-07-24 JP JP50495994A patent/JP3391454B2/ja not_active Expired - Lifetime
- 1993-07-24 US US08/204,395 patent/US5482570A/en not_active Expired - Lifetime
- 1993-07-24 ES ES93917648T patent/ES2105299T3/es not_active Expired - Lifetime
- 1993-07-24 EP EP93917648A patent/EP0606453B1/fr not_active Expired - Lifetime
- 1993-07-24 DE DE69311289T patent/DE69311289T2/de not_active Expired - Lifetime
- 1993-07-24 KR KR1019940700851A patent/KR940702649A/ko not_active Application Discontinuation
- 1993-07-24 WO PCT/EP1993/001980 patent/WO1994003930A1/fr active IP Right Grant
- 1993-07-24 AU AU47025/93A patent/AU672421B2/en not_active Ceased
- 1993-07-28 CN CN93116580A patent/CN1032994C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1032994C (zh) | 1996-10-09 |
JP3391454B2 (ja) | 2003-03-31 |
US5482570A (en) | 1996-01-09 |
ES2105299T3 (es) | 1997-10-16 |
DE69311289T2 (de) | 1998-01-15 |
FR2694451B1 (fr) | 1994-09-30 |
DE69311289D1 (de) | 1997-07-10 |
AU4702593A (en) | 1994-03-03 |
AU672421B2 (en) | 1996-10-03 |
JPH06511603A (ja) | 1994-12-22 |
FR2694451A1 (fr) | 1994-02-04 |
EP0606453A1 (fr) | 1994-07-20 |
EP0606453B1 (fr) | 1997-06-04 |
KR940702649A (ko) | 1994-08-20 |
CN1086049A (zh) | 1994-04-27 |
WO1994003930A1 (fr) | 1994-02-17 |
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