US7800194B2 - Thin film photodetector, method and system - Google Patents
Thin film photodetector, method and system Download PDFInfo
- Publication number
- US7800194B2 US7800194B2 US11/781,853 US78185307A US7800194B2 US 7800194 B2 US7800194 B2 US 7800194B2 US 78185307 A US78185307 A US 78185307A US 7800194 B2 US7800194 B2 US 7800194B2
- Authority
- US
- United States
- Prior art keywords
- type semiconductor
- photodetector
- thin film
- semiconductors
- fullerene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 239000010409 thin film Substances 0.000 title claims description 91
- 238000000034 method Methods 0.000 title description 60
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 239000002800 charge carrier Substances 0.000 claims abstract description 19
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 156
- 229910003472 fullerene Inorganic materials 0.000 claims description 129
- 239000000758 substrate Substances 0.000 claims description 115
- 239000000463 material Substances 0.000 claims description 54
- 239000010408 film Substances 0.000 claims description 35
- 239000002356 single layer Substances 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 230000009897 systematic effect Effects 0.000 claims 6
- 239000002109 single walled nanotube Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 40
- 239000000047 product Substances 0.000 description 34
- 230000008569 process Effects 0.000 description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 238000006116 polymerization reaction Methods 0.000 description 15
- -1 poly(phenylene vinylene) Polymers 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 13
- 238000000859 sublimation Methods 0.000 description 12
- 230000008022 sublimation Effects 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 9
- 230000005611 electricity Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 229910017604 nitric acid Inorganic materials 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000003491 array Methods 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000002071 nanotube Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000003795 desorption Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- 238000007127 saponification reaction Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000037361 pathway Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000000263 scanning probe lithography Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 235000021251 pulses Nutrition 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002164 ion-beam lithography Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000003495 polar organic solvent Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004634 thermosetting polymer Substances 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 1
- AGIJRRREJXSQJR-UHFFFAOYSA-N 2h-thiazine Chemical compound N1SC=CC=C1 AGIJRRREJXSQJR-UHFFFAOYSA-N 0.000 description 1
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004210 cathodic protection Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- CHVJITGCYZJHLR-UHFFFAOYSA-N cyclohepta-1,3,5-triene Chemical compound C1C=CC=CC=C1 CHVJITGCYZJHLR-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- ZJHQDSMOYNLVLX-UHFFFAOYSA-N diethyl(dimethyl)azanium Chemical compound CC[N+](C)(C)CC ZJHQDSMOYNLVLX-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229920006333 epoxy cement Polymers 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- 230000000266 injurious effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- QDLAGTHXVHQKRE-UHFFFAOYSA-N lichenxanthone Natural products COC1=CC(O)=C2C(=O)C3=C(C)C=C(OC)C=C3OC2=C1 QDLAGTHXVHQKRE-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000003863 metallic catalyst Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000011234 nano-particulate material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000447 polyanionic polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 238000009757 thermoplastic moulding Methods 0.000 description 1
- 150000005075 thioxanthenes Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- SEACXNRNJAXIBM-UHFFFAOYSA-N triethyl(methyl)azanium Chemical compound CC[N+](C)(CC)CC SEACXNRNJAXIBM-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a thin film photodetector, method and system, particularly to a thin film thermoelectric configured photodetector and more particularly to a photovoltaic cell with integral structure.
- a thin film photodetector for example a photovoltaic cell converts energy into electricity.
- Thin film photodetectors find application in photovoltaic devices Including solar cells, infrared sensors and photonic devices that absorb laser light that are applied in high speed optical transmission systems, for example as electro-absorption modulators, waveguide photodetectors, and semiconductor Mach-Zender modulators.
- a thin film photovoltaic cell photogenerates charge carriers (electrons and holes) in a light-absorbing material, and separates the charge carriers to a conductive contact that transmits electricity.
- a photovoltaic cell detects photons radiatively emitted by a light source. The cell converts the incident photons to charge carriers (electrons and holes) in a light absorbing material and the charge carriers are separated to a conductive contact that transmits electricity.
- Photons with energy greater than the semiconductor bandgap (E g ) (typically ranging from 0.50 to 0.74 eV for photovoltaic devices) excite electrons from the valence band to the conduction band of the semiconductor material (interband transition). The resulting electron-hole pairs are then collected and used to power electrical loads. Photons with energy less than the semiconductor bandgap cannot be converted to electrical energy and, therefore, are parasitically absorbed as heat.
- the invention relates to an augmented photodetector that converts a higher proportion of available photon energy into useable electric energy and to a method and system.
- the invention is a photodetector, comprising; a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the first section.
- the invention is a method of making a photodetector, comprising: forming at least one thin film electric interconnect on a electric insulating and thermal transmissive substrate; and disposing the substrate in a heat dissipating and electric generating relationship to at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier.
- the invention is a solar cell, comprising: at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and at least one thin film electric interconnect on an electric insulating and thermal transmissive substrate disposed in a heat dissipating and electric generating relationship to the at least one p-n junction.
- the invention is a method of making a photodetector, comprising: providing a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and positioning semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the first section.
- the invention is a method of producing a photovoltaic cell, comprising forming a thermal conductive film on an electric insulating and thermal transmissive substrate and disposing the substrate with semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipation and electric generating relationship to at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier.
- the invention is a method of making a photodetector, comprising: providing a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and positioning semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the cell.
- the invention is an infrared sensor, comprising; a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the cell.
- the invention is a method of making a structure, comprising providing a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; applying a patterned discontinuous fullerene thin film to a substrate surface to form at least one thin film interconnect; and positioning semiconductors of opposing conductivity type connected electrically in series and thermally in parallel by the at least one interconnect in a heat dissipating and electric generating relationship to the first section.
- the invention is a photovoltaic cell comprising a photon to electric generating structure that comprises a substrate having a support face having a first electrode thereon and a second electrode spaced from the first electrode by a plurality of layers including at least one layer of a semiconducting material with an active junction (J) interface with a second layer of a second semiconducting type and a cooling structure comprising semiconductors of opposing conductivity type coupled electrically in series and thermally in parallel by a least one associated thin film, the cooling structure disposed in a heat dissipating a electric generating relationship to the photon to electric generating structure.
- J active junction
- the invention is a system for generating electrical power from solar radiation, comprising: a receiver comprising at least one photovoltaic cell that can receive incidental solar energy or converting incident solar energy into electrical energy and incidental solar energy in the form of heat; and a thermoelectric element comprising an at least one thermoelectric material layer disposed between an n-type semiconductor and a p-type semiconductor in heat dissipating and electric generating relationship to the receiver.
- the invention is a thin film photodetector comprising a photovoltaic cell with a thermoelectric element, the thermoelectric element comprising p-type and n-type semiconductors formed between opposing electric insulators and opposing electron conductors.
- the invention is a thin film photodetector comprising an at least one thermoelectric material layer disposed between an n-type semiconductor and a p-type semiconductor, wherein the at least one thermoelectric material layer comprises a fullerene thin film deposited on a surface of a substrate.
- the invention is a thin film photodetector comprising semiconductors of opposing conductivity type coupled electrically in series and thermally in parallel by at least one associated surface discontinuous patterned fullerene thin film.
- the invention is a photovoltaic system, comprising at least one photodetector cell comprising a substrate having a support face having disposed thereon a first electrode and a second electrode separated from the first electrode by a plurality of layers comprising at least a first layer of a first semiconducting type and at least a second layer of a second semiconducting type with an active junction at an interface of the first layer and second layer; and semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generation relationship.
- FIG. 1 is a front elevation view of a solar cell
- FIG. 2 is a perspective exploded view of a portion of a FIG. 1 solar cell
- FIG. 3 is a view from the underside of an electric insulating and thermal transmissive substrate of the solar cell.
- FIG. 4 is a top view an electric insulating and thermal transmissive substrate that complements the FIG. 3 substrate.
- the invention relates to a photodetector for converting solar radiation to electrical energy.
- a photodetector converts incident photon energy into electricity.
- a photodetector such as a photovoltaic cell can comprise a single crystalline silicon material in which a PN junction is formed by the selective introduction of elemental dopants into a semiconductor body. Doping techniques such as diffusion and ion implantation can be used for this purpose.
- Metallic electrodes can be placed on the surface of the semiconductor body to form a current collection grid. In operation, incident radiation onto the cell is absorbed within the semiconductor body to create electron-hole pairs or carriers that are separated by the PN junction and made available to energize an external circuit.
- Photovoltaic cells include solar cells that can produce direct current electricity from the sun's rays.
- the current electricity can be used variously for example, to power equipment or to charge a battery.
- Radiation of photons having a threshold energy level of approximately 1.12 electron volts or higher can create an electron-hole pair in a solar cell semiconductor material.
- Photons of greater than threshold wavelength having lesser energy may be absorbed by the cell as heat. Since only a percentage of solar radiation is available for energy conversion and since the maximum power of a silicon photovoltaic cell is delivered at about one-half volt rather than 1.12 volts, maximum energy conversion without concentration of radiation is about 22%. However, in practice, other losses reduce conversion to about 10% in typical solar cells.
- Cooling can be provided to a solar cell system by both active and passive system.
- Active cooling systems include Rankine cycle systems and absorption systems, both of which require additional hardware and costs.
- Passive cooling systems make use of three natural processes: convection cooling; radiative cooling; and evaporative cooling from outer surfaces exposed to the atmosphere.
- the invention relates to an augmented photodetector, method and system, particularly to a thin film configured photodetector. While this invention does not depend on the following explanation, it is believed that the configuration imparts a supplemental electric generation to the photodetector by conversion of a temperature gradient into electricity.
- a thermoelectric EMF is created as a result of temperature difference between the materials making up the photovoltaic cell. If the materials form a complete loop, the EMF provides a continuous current flow
- a voltage created can be of an order of several microvolts per degree difference and can be supplemental to the current generated by the cell p-n junction.
- the invention relates to a multifunction photovoltaic cell.
- a multifunction cell can attain higher total conversion efficiency by capturing a larger portion of an incident light spectrum.
- individual cells with different bandgaps are stacked on top of one another. The individual cells are stacked so that light, for example solar energy falls first on a material that has a largest bandgap. Photons not absorbed in the first cell are transmitted to a second cell, which then selectively absorbs a higher-energy portion of the light radiation while remaining transparent to lower-energy photons. These selective absorption steps continue through to a final cell, which has the smallest bandgap.
- a thin film photovoltaic cell such as a solar cell includes a two component photoactive material; an electron acceptor and an electron donor.
- the electron donor can be a p-type polymeric conductor material, such as poly(phenylene vinylene) or poly(3-hexylthiophene).
- the electron acceptor can be a nanoparticulate material, such as, a derivative of fullerene (e.g., 1-(3-methoxy carbonyl)-propyl-1-1-phenyl-(6,6) C61, known as PCBM).
- PCBM 1-(3-methoxy carbonyl)-propyl-1-1-phenyl-(6,6) C61
- silicone or gallium arsenide is used to fabricate a solar cell can be used.
- the present invention relates to a photovoltaic cell that includes a fullerene material
- Fullerene is a class of carbon molecule having an even number of carbon atoms arranged in the form of a closed hollow cage wherein the carbon-carbon bonds define a polyhedral structure reminiscent of a soccer ball.
- the most well studied fullerene is C 60 , Buckminster fullerene.
- Other known fullerenes include C 70 and C 84 .
- the fullerene nanotube particularly a single wall nanotube (SWNT).
- a SWNT is a hollow, tubular molecule consisting essentially of sp 2 -hybridized carbon atoms typically arranged in hexagons and pentagons.
- the SWNT can have a diameter in a range of about 0.5 nanometer (nm) to about 3.5 nm and a length that can be greater than about 50 nm.
- a SWNT-containing fullerene product can be synthesized by an arc discharge process in the presence of a Group VIIIb transition metal anode, a laser ablation process, a high frequency plasma process, a thermal decomposition process (a chemical vapor deposition (CVD) process and a catalytic chemical vapor deposition (CCVD) process) wherein fullerene is sublimed at a controlled pressure and brought into contact with a heated catalyst, for example as disclosed by Maruyama PN 20060093545, incorporated herein by reference.
- CVD chemical vapor deposition
- CCVD catalytic chemical vapor deposition
- the fullerene can be deposited on a substrate surface using a sputtering approach, by a sublimation technique, by spin coating or by any other suitable technique.
- a SWNT-containing fullerene coating can be applied onto a substrate by a solution evaporation technique using solutions of fullerene dissolved in non-polar organic solvents such as benzene, toluene, etc. These processes form a physisorbed coating.
- the fullerene coating is applied to a substrate as the fullerene is formed, for example by sublimation as hereinafter described.
- FIG. 1 is a schematic front elevation view of a photodetector and FIG. 2 is a schematic exploded view of a FIG. 1 photodetector.
- the figures illustrate a preferred embodiment of the invention.
- the photodetector is represented by high efficiency solar cell 10 .
- solar cell 10 comprises an upper section comprising an incident surface that comprises an antireflective film 12 and an n-type material layer 14 , p-type material layer 16 , upper electrode 18 and lower electrode 20 .
- the n-type layer 14 and p-type layer 16 can be any epitaxial structure that forms a p-n junction of different semiconductor compositions. While FIG. 1 and FIG. 2 show a single p-n junction, the FIG. 1 p-n junction can represent a plurality of p-n junctions. For example, the FIG.
- FIG. 1 structure can represent a top cell of gallium indium phosphide, then a “tunnel junction” to allow the flow of electrons between the cells, and a bottom cell of gallium arsenide.
- Another cell can include a top cell of n-AlInP 2 /n-GaInP 2 /p-GaInP 2 , a tunnel layer of p-GaInAs/n-GaInAs and a bottom cell of n-GaInAs/p-GaInAs and a p+-GaAs substrate.
- the p-n layers 14 and 16 and electrodes 18 and 20 are postured on a lower section that includes electric insulating and thermal transmissive substrate of film 22 , which is opposed by corresponding electric insulating and thermal transmissive substrate or film 24 .
- Thin film electrical interconnects 26 and 28 are patterned to respective substrate 22 and 24 surfaces 30 , 32 as further shown in FIGS. 3 and 4 .
- the interconnects 22 and 24 are connected in a head to tail fashion by respective p-type semiconductor layers 34 and n-type semiconductor layers 36 to form a continuous electric transmissive pathway as hereinafter described in detail with additional respect to FIGS. 3 and 4 .
- the electric insulating and thermal transmissive substrates or films 22 and 24 can be the same or different material and each can be any suitable material that provides a path of relatively low thermal impedance from surface 30 of substrate 22 through surface 32 of substrate 24 .
- “electrically insulating and thermally conductive” material is a material having substantially no free electric charge to permit the flow of electric current so that when a voltage is placed across the material, no charge or current flows. Additionally, the material has a thermal conductivity greater than its connective material; for example such as the substrate 22 in the figures having a thermal conductivity greater than patterned thin film electric interconnect 26 and/or such as the substrate 24 having a thermal conductivity greater than patterned thin film electric interconnect 28 .
- Suitable materials include those with thermal conductivities between 1 to 100 W/m° K or 50 to 100 W/m° K.
- the electrically insulating and thermally conductive material can comprise a material having a thermal conductivity greater than 3 W/m° K, desirably greater than 4 W/m° K and preferable greater than 20 W/m° K.
- a high level of thermal conductivity means the substrate 22 and 24 material allows heat to pass through with ease and dissipates the heat evenly, preventing the build up of problematic hot spots.
- the substrate 22 and 24 can be a material with a thermal conductivity of greater than 3 W/m° K.
- Some appropriate materials include a ceramic material such as alumina (Al 2 O 3 ), aluminum nitride (AlN), beryllium oxide (BeO) or beryllium nitride (Be 3 N 2 ).
- suitable materials include polymer film, epoxy cement film, polymer matrix such as a thermoplastic or thermosetting polymer with or without a ceramic filler, alumina, calcium oxide, titanium oxide, silicon oxide, zinc oxide, silicon nitride, aluminum nitride, boron nitride materials and mixtures thereof, silicone sponge, film, gel or grease, a polycrystalline carbon including an appropriately doped fullerene film, metallic oxide layer such as Al 2 O 3 and a thermoplastic molding material such as a polyester.
- the electrically insulating and thermally conductive material can include epoxy materials and epoxy glass laminates.
- Another suitable “electrically insulating and thermally conductive” material is a thin film high dielectric material impregnated with a fullerene material.
- An Al 2 O 3 ceramic material is one preferred electrically insulating and thermally conductive material.
- a thermally conductive plastic substrate is another preferred material; for example a thermoplastic or thermosetting polymer matrix having dispersed thermally-conductive electrically-insulating material and optionally a reinforcing material.
- Polyphenylene sulfide is one suitable polymer.
- Thermally conductive polymers selected from the group consisting of polystyrene, polyurethane, polyvinyl chloride, polycarbonate, polymethacrylate, polyethylene and polypropylene can be suitable.
- the dispersed thermally-conductive, electrically-insulating material can be selected from the group consisting of calcium oxide, titanium oxide, silicon oxide, zinc oxide, silicon nitride, aluminum nitride, boron nitride and mixtures thereof.
- the reinforcing material can be glass, inorganic minerals, or other suitable material which strengthens the polymer matrix.
- a suitable “electrically insulating and thermally conductive” can comprise a base material having an electrically insulating property, for example a silicone base and a thermally conductive filler.
- the invention includes a relatively low melting point material.
- suitable substrate 22 or 24 materials can include polycarbonates and polymethacrylates. Even polyethylene and polypropylene films may be selected as suitable. These materials can import substantial lightweight and/or flexibility properties.
- FIG. 3 is a bottom view of the upper electric insulating and thermal transmissive substrate 22 of solar cell 10 and FIG. 4 is a top view of lower electric insulating and thermal transmissive substrate 24 of cell 10 .
- electric insulating and thermal transmissive substrate 22 is shown with a discontinuous or patterned thin film 26 applied to the substrate 22 surfaced 30 .
- Electric insulating and thermal transmissive substrate 24 is shown with a discontinuous or patterned thin film 28 applied to the substrate 24 surface 32 .
- FIG. 2 view is an exploded view of the FIG. 1 solar cell 10 .
- the substrate 22 in FIG. 3 is the FIG. 2 electrical insulator 22 oriented 180° to disclose its underside to show the configuration of thin film 26 on the substrate surface 30 .
- the patterned surface of FIG. 4 substrate 24 comprises a plurality of discontinuous thin film applications 28 that form a system that complements and interacts through layers 34 and 36 ( FIGS. 1 and 2 ) with the second and corresponding patterned thin film 26 on flat substrate surface 30 .
- FIGS. 1 , 2 , 3 and 4 taken together illustrate the complementary alignment of thin film patterns 26 and 28 .
- FIG. 3 and FIG. 4 electrically insulating and thermally conductive substrates 22 , 24 and folded over together with respective thin film patterned interconnects 26 and 28 facing one another, to form opposing plates of a thermoelectric element.
- the plates (interconnects 26 and 28 ) are alternately connected head to tail to form a continuous pathway between electrodes 38 and 40 .
- the electrodes 38 and 40 are connected to load 42 as electrodes 18 and 20 are connected to load 44 ( FIG. 1 ). While these figures show separate load 42 and load 44 , the FIG. 1 represents any correct connection of circuits to loads, for example, circuits of electrodes 38 and 40 can be connected to a single load in series of parallel with a circuit of electrodes 18 and 20 .
- the upper portion of solar cell 10 including antireflective film 12 , n-type semiconductors 14 , p-type semiconductors 16 , electrode 18 and electrode 20 and connecting circuit 44 , comprises a photovoltaic functioning module.
- incident light excites the photoactive material, electrons are released. The released electrons are captured in the form of electrical energy within the electric circuit 44 created between the electrodes 18 and 20 .
- the efficiency of the photoactive materials in generating electric energy is relatable to its thermal content, decreasing with increasing temperature.
- a second module of the cell 10 comprises electric insulating and thermal transmissive substrates 22 and 24 , patterned thin film electric interconnects 26 , patterned thin film electric interconnects 28 , p-type semiconductor layers 34 , n-type semiconductors layers 36 , electrodes 38 and 40 and circuit 44 .
- the electric insulating and thermal transmissive substrate 22 is shown in a heat conductive relationship with the first module via connection to electrode 22 and or a surface of p-type layer 16 . In a typical operation, much of the photon energy of incident light on n-layer 14 is not converted to electric current energy but rather is transferred as thermal energy to p-type layer 16 .
- Electric insulating and thermal transmissive substrate 22 initially dissipates some of the thermal energy from the adjacent p-type layer 16 to the cooler corresponding electric insulating and thermal transmissive substrate 24 .
- the substrate 24 acts as a heat sink to set up a thermal gradient from the first module p-type layer and second module electric insulating and thermal transmissive substrate 22 , across interconnects 26 , 28 and layers 34 , 36 to the cooling substrate 24 .
- the lower module generates electric current from the thermal energy profile between electric insulating and thermal transmissive substrate 22 and corresponding substrate 24 .
- the patterned thin film electric interconnects 26 , patterned thin film electric interconnects 28 , p-type semiconductors 34 and n-type semiconductors 36 are arranged to provide an end to end electron conducting pathway.
- the thermoelectric effect of the temperature gradient results in n-type semiconductors 36 of the second module having excessive electrons and the p-type semiconductors 34 having a deficiency, which results in a current flow with load 42 .
- the patterned structures 26 and 28 provide a complementary pathway configuration that converts the thermal energy from the gradient from substrate 22 to substrate 24 into electrical energy (Siebeck effect).
- the current can be connected with the current through 44 either parallel or serially to supplement the current that is directly generated from the cell 10 photovoltaic effect.
- the cell 10 represents a multijunction cell.
- a multijunction cell can be constructed from a plurality of independently made cells, at least one with a high bandgap and at least one with a lower bandgap. Then the cells can be stacked, one on top of the other. In another construction, one complete first solar cell can be made and then layers for successive cells can be grown or deposited on the first.
- a photovoltaic cell such as cell solar cell 10
- the thin film is applied to a film substrate such as the substrate 22 or 24 of the figures.
- the interconnect ( 26 or 28 ) thin film can be a fullerence monolayer.
- the term “monolayer” as applied to a film of fullerence means a coating having approximately on layer of fullerene molecules although the properties of the coating may not be significantly affected if the film is slightly more than a molecule thick.
- monolayer or “monomolecular layer” means a substantially monomolecular thick layer that can be include some molecular overlay and variation in diameter so that the thickness can vary from about 0.5 nm to about 6 nm.
- the monolayer is less than 1 nm thick. In a desired embodiment, the monolayer is less than 1 nm thick to about 3 nm. The monolayer exhibits desirable and even in some instances, enhanced heat dissipating properties without adding significant structure or profile to a thermal energy generating component.
- the patterned fullerene electric interconnect 26 or 28 is formed by any suitable method, including a masked vapor deposition process.
- a suitable vapor-deposition device comprises a reaction chamber capable of maintaining vacuum or lower pressure and a heater such as a resistance heater for vaporizing the fullerene molecules.
- the fullerene is sublimed from a powder by heating to a temperature greater than about 450° C. under low pressures, preferably less than about 1 ⁇ 10 ⁇ 6 torr. Preferred sublimation temperatures are included in a range from about 450° C. to about 550° C.
- the fullerene powder is heated to a first lower temperature, preferably from about 200° C. to about 350° C. to remove any solvent or other impurities.
- the sublimation step can be conducted at less of a reduced pressure but at a higher temperature. However, it is preferred that the sublimation step is conducted at lower pressure, preferably less than about 1 ⁇ 10 ⁇ 8 torr.
- the heated fullerene molecules form a vapor-deposited film 26 or 28 on the substrate 22 or 24 surface 30 or 32 .
- the film can be selectively applied to the substrate surface 30 or 32 using a mask or lattice structure.
- the film can be deposited, a mask or lattice structure applied and the film selectively etched or otherwise removed to provided a fullerene thin film 26 or 28 pattern of the invention.
- the mask can be a sacrificial material such as a polycrystalline-silicon.
- the fullerene powder can be placed in a porous container or tube and the substrate 22 or 24 placed at the tube or container opposite end.
- the substrate surface 30 or 32 is protected while the powder is brought to sublimation temperature and pressure. When the sublimation pressure and temperature are reached, the substrate surface 30 or 32 is exposed while maintained at a lower temperature.
- the fullerene vapor condenses onto the substrate surface 30 or 32 and forms to the substrate surface material.
- the substrate 22 or 24 is swept past a fullerene powder source at a rate to provide desired condensation and deposit. Exposure time and sublimation conditions can be monitored by an appropriate device such as real-space STM atomic imaging device to control deposition to a desired fullerene deposit thickness on the substrate surface 30 or 32 .
- an appropriate device such as real-space STM atomic imaging device to control deposition to a desired fullerene deposit thickness on the substrate surface 30 or 32 .
- One such method comprises positioning a tunneling tip device at a desired detecting position with respect to the substrate 22 or 24 and controlling application of the fullerene thin film to the substrate surface 30 or 32 according to the positioned tunneling tip device. In this embodiment, control can be according to detection of a current between the tip of the device and the fullerene thin film 26 or 28 depositing on the substrate surface 30 or 32 .
- the fullerene thin film 26 or 28 is deposited by sublimation from a solution.
- the carbon thin film can be applied by a Langmuir-Blodgett (LB) technique or by solution evaporation using a solution of fullerene dissolved in a non-polar organic solvent such as benzene or toluene.
- LB Langmuir-Blodgett
- the resulting solution is loaded into a resistively heated stainless steel tube oven.
- the oven is placed into a vacuum chamber, which is evacuated to approximately 10 ⁇ 6 Torr.
- the oven is then heated to about 150° C. for five minutes.
- a substrate is rotated above the tube oven opening.
- the tube is then further heated to at least 450° C., preferably to approximately 550° C. to sublime the fullerene from the solvent onto the substrate surface 30 or 32 .
- the fullerene thin film 26 or 28 can be polymerized by methods including photopolymerization, electron beam polymerization, X-ray polymerization, electromagnetic polymerization, micro-wave polymerization method and electronic polymerization.
- electron beam polymerization an electron beam is irradiated from an electron gun.
- the fullerene molecules are excited by the electron beam and polymerized at an excited state.
- X-ray polymerization X-rays are irradiated from an X-ray tube in place of an electron beam.
- the fullerene molecules are excited by the X-rays and polymerized at the excited state.
- Suitable plasma polymerization methods include a high-frequency plasma method, a DC plasma method and an ECR plasma method.
- a typical high-frequency plasma polymerization apparatus can include a vacuum vessel with opposing electrodes. The electrodes are connected to an outer high frequency power source.
- a molybdenum boat accommodates fullerene starting material within the vessel. The vessel is connected to an external resistance heating power source.
- a low-pressure inert gas such as argon, is introduced into the vacuum vessel. After the vacuum vessel 13 is charged with inert gas, current is supplied to vaporize the fullerene to generate a plasma.
- the fullerene plasma is illuminated by illuminating electromagnetic waves such as RF plasma, to polymerize the fullerene molecules to deposit as fullerene polymer film.
- the amount of deposited thin film can be controlled by control of the temperature of the substrate surface 30 or 32 . Increasing the temperature, decreases the amount of deposited film. Typically, the substrate surface 30 or 32 is maintained at a temperature 300° C. or less. If plasma power is of the order of 100 W, the temperature need not exceed 70° C. Thickness of the deposited film can be measured to control the film thickness.
- the thin film 26 or 28 patterned structure can fabricated by masking a substrate surface 30 and 32 during a deposition produced or by masking an applied thin film during a subsequent etching step.
- the mask can define deposition areas to create the patterned areas of the structure of the invention.
- the mask is a metal or a ceramic material.
- the mask can be formed of any suitable material.
- the mask can be made of a material that can be relatively easily removed, such as by physical removal, dissolving in water or in a solvent, by chemically or electrochemically etching, or by vaporizing through heating.
- the deposition mask can be a metal oxide, such as silicon oxide or aluminum oxide or water-soluble or solvent-soluble salts such as sodium chloride, silver chloride, potassium nitrate, copper sulfate, and indium chloride, or soluble organic materials such as sugar and glucose.
- the mask material can also be a chemically etchable metal or alloy such as Cu, Ni, Fe, Co, Mo, V, Al, Zn, In, Ag, Cu—Ni alloy, Ni—Fe alloy and others, or base-dissolvable metals such as Al can also be used.
- the mask can be make of a soluble polymer such as polyvinyl alcohol, polyvinyl acetate, polyacrylamide or acrylonitrile-butadiene-styrene.
- the removable mask can be a volatile (evaporable) material such as PMMA polymer. These materials can be dissolved in an acid such as hydrochloric acid, aqua regia, or nitric acid, or can be dissolved away in a base solution such as sodium hydroxide or ammonia.
- the removable layer or mask may also be a vaporizable material such as Zn which can be decomposed or burned away by heat.
- the mask can be added by physically placing in on the substrate surface 30 or 32 (or on the deposited thin film 26 or 28 ), by chemical deposition such as electroplating or electroless plating, by physical vapor deposition such as sputtering, evaporation, laser ablation, ion beam deposition, or by chemical vapor decomposition.
- the mask can be a metal oxide, such as quartz or sapphire.
- the metal oxide can be stenciled or patterned into the structures desired, such as holes, circles, and trenches.
- the deposition targets can be formed by placing an impurity, local defect, or stress on the substrate or the mask.
- the impurity, local defect, or stress can be placed by x-ray lithography, deep UV lithography, scanning probe lithography, electron bean lithography, ion beam lithography, optical lithography, electrochemical deposition, chemical deposition, electro-oxidation, electroplating, sputtering, thermal diffusion and evaporation, physical vapor deposition, sol-gel deposition, or chemical vapor deposition.
- the location and number of carbon thin films can be controlled by etching at desired location and not etching at all or etching at different rates the areas surrounding the desired area.
- methods of fabrication of the thin film include lithographic techniques such as optical and scanning probe lithography that fabricate a discontinuance or a structure at a specific location on the substrate.
- lithographic techniques such as optical and scanning probe lithography that fabricate a discontinuance or a structure at a specific location on the substrate.
- Existing optical and scanning probe lithographic technologies can be used to fabricate holes with controllable diameter at precise locations on the substrate with controllable depth. These methods include x-ray lithography, deep UV lithography, scanning probe lithography, electron beam lithography, ion beam lithography, and optical lithography.
- Scanning Probe Lithography can be used to fabricate structures, including the holes, with precise control over the of the location and the dimension of the hole.
- Optical lithography is a technology capable of mass production of structures. Control of the location and dimension of structures, such as the holes, can be performed with precise control.
- the thin film patterned substrate 22 , 24 can be fabricated by first depositing a thin film according to an above described deposition process or by any other suitable process followed by polymerization of the deposited thin film fullerene. And, the fullerene patterned substrate can be formed and simultaneously polymerized in the same disposition vessel by an exemplary microwave polymerization, electrolytic polymerization or the like.
- Various polymerization devices and processes are described in Ata et al., U.S. Pat. No. 6,815,067 and Ramm et al., U.S. application Ser. No. 10/439,359 (Publication 20030198021), each of which is incorporated herein by reference in their respective entireties.
- a typical microwave polymerization apparatus includes a molybdenum boat that accommodates fullerene molecules as a starting material. Microwaves generate a depositing fullerene polymer by excitation of vaporized fullerene molecules.
- An electrolytic polymerization apparatus comprises an electrolytic cell that includes a positive electrode and a negative electrode connected to a potentiostat. A reference electrode is connected to the same potentiostat so that a pre-set electric potential can be applied across the positive/negative electrodes. Fullerene molecules and a supporting electrolyte are charged into the cell.
- the potentiostat applies a pre-set electrical energy the positive/negative electrodes to form fullerene anionic radicals, which precipitate as a thin fullerene film on the negative electrode and fullerene polymer precipitates and is recovered by filtration or drying and kneading into a resin to form a thin fullerene polymer film.
- a thin monolayer fullerene film or fullerene polymer film may be desirable to provide the smallest and lightest possible structure that is an effective conductive structure without changing the electrical insulator substrate properties.
- a thin, even mono-molecular layer can be applied according to one or more procedures.
- One procedure takes advantage of strong fullerene to substrate bond.
- the fullerene bond to a metal/semiconductor substrate surface is stronger than inter molecular bonding among fullerene molecules.
- Desorption temperature is related to bond strength among fullerene molecules or between fullerenes and substrate. Hence, strength of fullerene bonding can be estimated by the temperature at which a fullerene desorbs.
- fullerene desorption temperature is between 225° C. and 300° C.
- an applied temperature of higher than 225° C., desirably at least 350° C. and in some applications up to about 450° C. will effect fullerene desorption without disrupting the fullerene to substrate surface 30 or 32 bond.
- desorption of excess fullerene beyond a monolayer can be achieved by heating at a temperature from about 225° C. to about 300° C.
- a fullerene monolayer film is formed by depositing a thin film of fullerene molecules onto the substrate surface 30 or 32 according to any of the above described deposition procedures.
- Layers of the deposited thin film 26 or 28 are removed to produced a residual film of desired thickness.
- the layers are removed by selectively breaking fullerene-to-fullerene intermolecular bonds without breaking the fullerene-to-substrate association or bonding and without subjecting the film or substrate to injurious temperatures, by this mechanism, excess fullerene can be removed beyond a desired thickness such as a monolayer, for example by heating to a temperature sufficient to break the fullerene-fullerene bonds without disrupting the fullerene monolayer 26 or 28 that is applied to the substrate surface 30 or 32 .
- Other methods of selectively breaking the fullerene intermolecular bond include laser beam, ion beam or electron beam selective irradiation.
- an energetic photon laser beam, electron beam or inert ion beam can be irradiated onto the deposited substrate with a controlled energy that is sufficient to break fullerene-to-fullerene intermolecular bonds without breaking fullerene-to-substrate associations or bonds.
- the parameters of the beam irradiation depend upon the energy, flux and duration of the beam and also depend on the angle of the beam to the fullerene thin film 26 or 28 deposit. In general, the energy of irradiation is controlled to avoid fullerene molecule decomposition or reaction and to avoid excessive local heating.
- a laser at an energy outside of the ultraviolet range preferably in the visible or infrared range, to avoid reacting fullerene molecules.
- the laser can be effectively operated in the ultraviolet range to cleave fullerene layers so long as operating conditions such as temperature, pressure and pulsation are controlled.
- the laser or other light source is operated in the visible or infrared portion or the spectrum. Light intensity and beam size can be adjusted to produce the desired desorption rate of fullerenes beyond a desired layer thickness such as a monolayer thickness.
- the fullerene layers can be cleaved to a desired thickness in the same vacuum chamber where the substrate surface is cleaned and the fullerene thin film is deposited. Maintaining the substrate under vacuum keeps it clean and reduces beam scattering during irradiation. Additionally the vacuum can prevent fullerene recondensation by removing desorbed fullerene from the irradiation area.
- An ion beam is generated by bombarding a molecular flow with high energy electrons that produce an ionization.
- the ion beam can be directed with electrodes. If an ion beam is used, beam energy and flux should be low enough to avoid decomposing the fullerene or forming higher-ordered fullerene molecules.
- acceleration voltage can be as high as 3.0 kilovolts for some applications. Desirably, the voltage is between 50 and 1000, and preferably between about 100 and 300 volts.
- the beam current density can be in the range of about 0.05 to 5.0 mA/cm 2 (milliAmperes per square centimeter).
- ion clusters are used that have an atomic mass approximating that of the fullerene molecules.
- a C 60 fullerene molecule has an atomic mass unit (AMU) of 720.
- Beams of clustered ions approximating the mass of the fullerene molecules can be used to inject energy into the multilayer fullerene thin film to break the fullerene-to-fullerene intermolecular bond without depreciating the fullerene molecules.
- Clusters can be formed by expanding an inert as such as argon, through a supersonic nozzle followed by applying an electron beam or electric arc to form clusters.
- the angle of incidence of a directed beam to the fullerene thin film can be varied to control dissociation.
- a beam angle relative to irradiated target can be selected between about 25° and about 75°, preferably between 40° and 65°.
- incident angle is determined by balancing factors such as removal efficiency and precision.
- an method of applying a fullerene thin film to a substrate that melts at a temperature lower than the application temperature of the fullerene thin film comprises first applying a fullerene thin film to a first higher melting temperature substrate (melting at a temperature higher than the application temperature of the thin film) to produce a first fullerene thin filmed substrate.
- the first fullerene thin film substrate is placed in contact with a lower melting temperature substrate with a first surface in contact with an exposed fullerene surface of the fullerene thin film substrate to form a two substrate structure with intermediate fullerene thin film between the substrates.
- a second fullerene deposit is then applied to an exposed surface of the second substrate and the intermediate fullerene deposit between the two substrates is cleaved to produced two fullerene deposit substrates, one of which is the lower melting temperature substrate.
- the intermediate fullerene deposit functions to dissipate heat away from the lower melting structure while the second deposit is applied at a temperature that otherwise could damage the lower melting substrate.
- the patterned structure 10 is a substrate 22 or 24 comprising deposited fullerene thin film 26 or 28 with or without a property enhancing dopant.
- the fullerene pattern of the of the invention can act as a hole transport thin film.
- the performance characteristics of the hole transport thin film can be determined by the ability of the fullerene to transport the charge carrier.
- Ohmic loss in the fullerene thin film is related to conductivity, which has a direct effect on operating voltage and also can determines the thermal load transportable by the thin film.
- p-doping By doping at least one of the fullerene hole transport thin film patterns 26 or 28 with a suitable acceptor material (p-doping), the charge carrier density and hence the conductivity is increased.
- the thin film fullerene 26 or 28 can be doped with a donor type (n-type) or acceptor type (p-type) dopant.
- the dopant can be added to improve electric conductivity and heat stability.
- the dopant is a polyanion.
- An alkali metal such a lithium, sodium, rubidium or cesium is another preferred dopant.
- preferred dopants include alkali-earth metals such as calcium, magnesium, and the like; quaternary amine compounds such as tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, methyltriethylammonium and dimethyldiethylammonium.
- the fullerene is doped to have an increased charge carrier density and effective charge carrier mobility for use as an element of a thermoelectric element.
- a hydrogenated form of an organic compound is mixed as a dopant directly into the fullerene.
- the hydrogenated form of the organic compound is a neutral, nonionic molecule that can undergo complete sublimation.
- hydrogen, carbon monoxide, nitrogen or hydroxy radicals are split off and at least one electron is transferred to the fullerene or from the fullerene.
- the method can use a salt of the organic dopant.
- Suitable organic dopants include cyclopentadiene, cycloheptatriene, a six-member heterocyclic condensed ring, a carbinol base or xanthene, acridine, diphenylamine, triphenylamine, azine, oxazine, thiazine or thioxanthene derivative. After mixing of the dopant, the mixture can be stimulated with radiation to transfer a charge from the organic dopant to the fullerene.
- the fullerene products of the above described syntheses include only a proportion of SWNT product.
- An upgraded SWNT product having enhanced thermal properties is desirable in some thermoelectric applications.
- Processes to obtain a fullerene product comprising an upgraded proportion of SWNT from a product of the above syntheses include contacting a fullerene product in the presence of a transition metal element or alloy under a reduced pressure in an inert gas atmosphere.
- Some direct processes for obtaining an upgraded SWNT product include catalytic laser irradiation, heat treatment and CCVD processes.
- one SWNT product with less than about 10 wt % other carbon-containing species can be produced by an all-gas phase method using a gaseous transition metal catalyst and a high pressure CO as a carbon feedstock.
- catalyst residue can be left as an impurity in the product material.
- Proportion of SWNT in a fullerene synthesis product can be enriched in accordance with certain other procedures to provide an improved and advantageous upgraded SWNT thermal coating and film.
- a SWNT-containing reaction product is heated under oxidizing conditions as described in Colbert et al. U.S. Pat. No. 7,115,864, incorporated herein by reference, to provide a product that is enriched in at least 80%, preferably at least 90%, more preferably at least 95% and most preferably over 99% SWNT.
- an upgraded SWNT is a reaction product comprising at least 80% pure SWNT.
- the upgraded SWNT has been found to be particularly useful as a heat dissipating coating or film in combination with a thermal energy generating component.
- a SWNT-containing product composition is heated in an aqueous solution of an inorganic oxidant, such as nitric acid, a mixture of hydrogen peroxide and sulfuric acid or potassium permanganate to remove amorphous carbon and other contaminants.
- the SWNT-containing synthesis product can be refluxed in an aqueous solution of the oxidizing acid at a concentration high enough to etch away the amorphous carbon deposits within a practical time frame, but not so high a concentration that the SWNT material will be etched to a significant degree.
- Nitric acid at concentrations from 2.0 to 2.6 M is suitable.
- the reflux temperature of the aqueous acid solution can be about 102° C.
- a SWNT-containing product can be refluxed in a nitric acid solution at a concentration of 2.6 M for 24 hours.
- the upgraded product can be separated from the oxidizing acid by filtration.
- a second 24 hour period of refluxing in a fresh nitric solution of the same concentration can be employed followed by filtration.
- Refluxing under acidic oxidizing conditions may result in the esterification of some of the nanotubes, or nanotube contaminants.
- the contaminating ester material may be removed by saponification, for example, by using a sodium hydroxide solution in ethanol at room temperature for 12 hours. Other conditions suitable for saponification of ester linked polymers can be used.
- saponification can be accomplished with a sodium hydroxide solution in ethanol at room temperature for 12 hours.
- the SWNT-containing product can be neutralized after the saponification step. Refluxing the SWNT-containing product in 6M aqueous hydrochloric acid for 12 hours is one suitable neutralization.
- the SWNT-containing product can be collected by settling or filtration to a thin mat form of purified bundles of SWNT.
- the upgraded SWNT-containing product is filtered and neutralized to provide a black mat of upgraded SWNT about 100 microns thick.
- the SWNT in the mat may be of varying lengths and may comprises individual SWNTs and of up to 10 3 SWNT bundles and mixtures of individual SWNTs of various thicknesses.
- a product that comprises nanotubes that are homogeneous in length, diameter and/or molecular structure can be recovered from the mat by fractionation.
- the upgrade SWNT can then be dried, for example by baking at 850° C. in a hydrogen as atmosphere to produce a dry upgraded SWNT product.
- an initial cleaning in HNO 3 can convert amorphous carbon in a SWNT product to various sizes of linked polycyclic compounds.
- the base solution ionizes most of the polycyclic compounds, making them more soluble in aqueous solution.
- the SWNT mat product can be refluxed in HNO 3 .
- the SWNT product can be filtered and washed with NaOH solution.
- the filtered SWNT product is polished by stirring in a Sulfuric acid/Nitric acid solution. This step removes essentially all remaining material from the SWNT product that was produced during the nitric acid treatment.
- the SWNT product is diluted and the product again filtered.
- the SWNT product is again washed with a NaOH solution.
- Smalley et al. U.S. Pat. No. 6,183,713 incorporated herein by reference, discloses a method to make a SWNT reaction product by laser vaporizing a mixture of carbon and one or more Group VIII transition metals. Single-wall carbon nanotubes preferentially form in the vapor. The SWNT product is fixed in a high temperature zone where the Group VIII transition metal catalyzes further SWNT growth.
- two separate laser pulses are utilized with the second pulse timed to be absorbed by the vapor created by the first pulse. Colbert et al. subjected a Smalley et al.
- Aligned carbon nanotube arrays can be synthesized in a hot filament plasma enhanced chemical vapor deposition (HF-PECVD) system.
- HF-PECVD hot filament plasma enhanced chemical vapor deposition
- a variety of substrates metal, glass, silicon, etc) are first coated with nickel nanoparticles and then introduced into the CVD chamber.
- the method of nickel nanoparticle deposition defines the nanotube site density.
- Standard aligned carbon nanotube arrays are produced on a nickel sputtering-coated substrate, whereas low site-density carbon nanotube arrays are produced on a nickel electric-chemical-coated substrate.
- the fullerene can include a thermal transfer enhancing additive or dopant, for example encapsulation of one or more metal atoms encapsulated inside a fullerene “cage” or NT.
- a thermal transfer enhancing additive or dopant for example encapsulation of one or more metal atoms encapsulated inside a fullerene “cage” or NT.
- Examples include Sc@C-82, Y@C-82, La@C-82, Gd@C-82, La-2@jC-80, Sc-2@C-84 and alkali metal, Fe, Cr and Ni and silicon-doped fullerene film and NT.
- Photovoltaic cells can electrically connected in series and/or in parallel to create a photovoltaic module.
- two photovoltaic cells are connected in parallel by electrically connecting the cathode of one cell with the cathode of the other cell, and the anode of one cell with the anode of the other cell.
- two photovoltaic cells are connected in series by electrically connecting the anode on one cell with the cathode of the other cell.
- one or more photovoltaic functions are connected in series with one or more thermoelectric functions by connecting a cathode of a cell of the photovoltaic functions with a cathode of a thermoelectric function and an anode of the photovoltaic functioning cell is connected with the anode of the photovoltaic function.
- cells can be grouped together to form modules or panels that can be arranged in arrays.
- solar arrays have been used to power orbiting satellites and other spacecraft and in remote areas as a source of power for applications such as roadside emergency telephones, remote sensing, and cathodic protection of pipelines. Decline of cost of these panels or arrays is expanding the range of cost-effective uses, for example to road signs, home power generation, pocket calculators and communication devices and even for grid-connected electricity generation.
- Solar cells have many applications.
- the cells are used where electrical power from a grid is unavailable, such as in remote area power systems, Earth-orbiting satellites and space probes, consumer system, e.g. handheld calculators or wrist watches, remote radiotelephones and water pumping applications.
- a grid such as in remote area power systems, Earth-orbiting satellites and space probes, consumer system, e.g. handheld calculators or wrist watches, remote radiotelephones and water pumping applications.
- solar modules photovoltaic arrays
- inverter often in combination with a net metering arrangement.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A photodetector, comprises a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the cell to augment generation of electric energy of the first section.
Description
This application is a continuation-in-part application of Freedman, Ser. No. 11/381,583 filed May 4, 2006 and Freedman Ser. No. 11/687,961 filed Jan. 27, 2007, both of which are continuation-in-part applications of Freedman Ser. No. 10/127,585, filed 23 Apr. 2002, now U.S. Pat. No. 7,208,191.
The invention relates to a thin film photodetector, method and system, particularly to a thin film thermoelectric configured photodetector and more particularly to a photovoltaic cell with integral structure.
A thin film photodetector, for example a photovoltaic cell converts energy into electricity. Thin film photodetectors find application in photovoltaic devices Including solar cells, infrared sensors and photonic devices that absorb laser light that are applied in high speed optical transmission systems, for example as electro-absorption modulators, waveguide photodetectors, and semiconductor Mach-Zender modulators.
A thin film photovoltaic cell photogenerates charge carriers (electrons and holes) in a light-absorbing material, and separates the charge carriers to a conductive contact that transmits electricity. For example, a photovoltaic cell detects photons radiatively emitted by a light source. The cell converts the incident photons to charge carriers (electrons and holes) in a light absorbing material and the charge carriers are separated to a conductive contact that transmits electricity.
The wavelength (λ) of an incident photon is inversely proportional to its photon energy and can be calculated from λ=hc/E where h is Planck's constant and c is the speed of light. Photons with energy greater than the semiconductor bandgap (Eg) (typically ranging from 0.50 to 0.74 eV for photovoltaic devices) excite electrons from the valence band to the conduction band of the semiconductor material (interband transition). The resulting electron-hole pairs are then collected and used to power electrical loads. Photons with energy less than the semiconductor bandgap cannot be converted to electrical energy and, therefore, are parasitically absorbed as heat. In some systems, improved photovoltaic conversion efficiency is attained by reducing the amount of below bandgap energy that is parasitically absorbed. But these mechanisms only depreciate the conversion efficiency of total incident photon energy to electric power by diverting some energy (albeit in the form of heat) away from the cell.
There is a need for an improved photodetector that converts a higher proportion of available photon energy into useable electric energy and method and system.
The invention relates to an augmented photodetector that converts a higher proportion of available photon energy into useable electric energy and to a method and system.
In an embodiment, the invention is a photodetector, comprising; a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the first section.
In an embodiment, the invention is a method of making a photodetector, comprising: forming at least one thin film electric interconnect on a electric insulating and thermal transmissive substrate; and disposing the substrate in a heat dissipating and electric generating relationship to at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier.
In an embodiment, the invention is a solar cell, comprising: at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and at least one thin film electric interconnect on an electric insulating and thermal transmissive substrate disposed in a heat dissipating and electric generating relationship to the at least one p-n junction.
In an embodiment, the invention is a method of making a photodetector, comprising: providing a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and positioning semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the first section.
In another embodiment, the invention is a method of producing a photovoltaic cell, comprising forming a thermal conductive film on an electric insulating and thermal transmissive substrate and disposing the substrate with semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipation and electric generating relationship to at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier.
In another embodiment, the invention is a method of making a photodetector, comprising: providing a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and positioning semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the cell.
In another embodiment, the invention is an infrared sensor, comprising; a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the cell.
In still another embodiment, the invention is a method of making a structure, comprising providing a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; applying a patterned discontinuous fullerene thin film to a substrate surface to form at least one thin film interconnect; and positioning semiconductors of opposing conductivity type connected electrically in series and thermally in parallel by the at least one interconnect in a heat dissipating and electric generating relationship to the first section.
In still another embodiment, the invention is a photovoltaic cell comprising a photon to electric generating structure that comprises a substrate having a support face having a first electrode thereon and a second electrode spaced from the first electrode by a plurality of layers including at least one layer of a semiconducting material with an active junction (J) interface with a second layer of a second semiconducting type and a cooling structure comprising semiconductors of opposing conductivity type coupled electrically in series and thermally in parallel by a least one associated thin film, the cooling structure disposed in a heat dissipating a electric generating relationship to the photon to electric generating structure.
In still another embodiment, the invention is a system for generating electrical power from solar radiation, comprising: a receiver comprising at least one photovoltaic cell that can receive incidental solar energy or converting incident solar energy into electrical energy and incidental solar energy in the form of heat; and a thermoelectric element comprising an at least one thermoelectric material layer disposed between an n-type semiconductor and a p-type semiconductor in heat dissipating and electric generating relationship to the receiver.
In another embodiment, the invention is a thin film photodetector comprising a photovoltaic cell with a thermoelectric element, the thermoelectric element comprising p-type and n-type semiconductors formed between opposing electric insulators and opposing electron conductors.
In another embodiment, the invention is a thin film photodetector comprising an at least one thermoelectric material layer disposed between an n-type semiconductor and a p-type semiconductor, wherein the at least one thermoelectric material layer comprises a fullerene thin film deposited on a surface of a substrate.
In another embodiment, the invention is a thin film photodetector comprising semiconductors of opposing conductivity type coupled electrically in series and thermally in parallel by at least one associated surface discontinuous patterned fullerene thin film.
In another embodiment, the invention is a photovoltaic system, comprising at least one photodetector cell comprising a substrate having a support face having disposed thereon a first electrode and a second electrode separated from the first electrode by a plurality of layers comprising at least a first layer of a first semiconducting type and at least a second layer of a second semiconducting type with an active junction at an interface of the first layer and second layer; and semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generation relationship.
In an embodiment, the invention relates to a photodetector for converting solar radiation to electrical energy. A photodetector converts incident photon energy into electricity. A photodetector such as a photovoltaic cell can comprise a single crystalline silicon material in which a PN junction is formed by the selective introduction of elemental dopants into a semiconductor body. Doping techniques such as diffusion and ion implantation can be used for this purpose. Metallic electrodes can be placed on the surface of the semiconductor body to form a current collection grid. In operation, incident radiation onto the cell is absorbed within the semiconductor body to create electron-hole pairs or carriers that are separated by the PN junction and made available to energize an external circuit.
Photovoltaic cells include solar cells that can produce direct current electricity from the sun's rays. The current electricity can be used variously for example, to power equipment or to charge a battery. Radiation of photons having a threshold energy level of approximately 1.12 electron volts or higher can create an electron-hole pair in a solar cell semiconductor material. Photons of greater than threshold wavelength having lesser energy may be absorbed by the cell as heat. Since only a percentage of solar radiation is available for energy conversion and since the maximum power of a silicon photovoltaic cell is delivered at about one-half volt rather than 1.12 volts, maximum energy conversion without concentration of radiation is about 22%. However, in practice, other losses reduce conversion to about 10% in typical solar cells.
The efficiency of a solar cell is relatable to its thermal content, decreasing with increasing temperature. Cooling can be provided to a solar cell system by both active and passive system. Active cooling systems include Rankine cycle systems and absorption systems, both of which require additional hardware and costs. Passive cooling systems make use of three natural processes: convection cooling; radiative cooling; and evaporative cooling from outer surfaces exposed to the atmosphere.
The invention relates to an augmented photodetector, method and system, particularly to a thin film configured photodetector. While this invention does not depend on the following explanation, it is believed that the configuration imparts a supplemental electric generation to the photodetector by conversion of a temperature gradient into electricity. A thermoelectric EMF is created as a result of temperature difference between the materials making up the photovoltaic cell. If the materials form a complete loop, the EMF provides a continuous current flow A voltage created can be of an order of several microvolts per degree difference and can be supplemental to the current generated by the cell p-n junction.
In a embodiment, the invention relates to a multifunction photovoltaic cell. A multifunction cell can attain higher total conversion efficiency by capturing a larger portion of an incident light spectrum. In one multijunction cell, individual cells with different bandgaps are stacked on top of one another. The individual cells are stacked so that light, for example solar energy falls first on a material that has a largest bandgap. Photons not absorbed in the first cell are transmitted to a second cell, which then selectively absorbs a higher-energy portion of the light radiation while remaining transparent to lower-energy photons. These selective absorption steps continue through to a final cell, which has the smallest bandgap.
A thin film photovoltaic cell such as a solar cell includes a two component photoactive material; an electron acceptor and an electron donor. The electron donor can be a p-type polymeric conductor material, such as poly(phenylene vinylene) or poly(3-hexylthiophene). The electron acceptor can be a nanoparticulate material, such as, a derivative of fullerene (e.g., 1-(3-methoxy carbonyl)-propyl-1-1-phenyl-(6,6) C61, known as PCBM). Typically, silicone or gallium arsenide is used to fabricate a solar cell can be used. Currently, much interest is directed to cells based on other materials such as carbon fullerenes because of their availability as thin films approaching a nanometer thickness. In a embodiment, the present invention relates to a photovoltaic cell that includes a fullerene material Fullerene is a class of carbon molecule having an even number of carbon atoms arranged in the form of a closed hollow cage wherein the carbon-carbon bonds define a polyhedral structure reminiscent of a soccer ball. The most well studied fullerene is C60, Buckminster fullerene. Other known fullerenes include C70 and C84. Also included is the fullerene nanotube, particularly a single wall nanotube (SWNT). A SWNT is a hollow, tubular molecule consisting essentially of sp2-hybridized carbon atoms typically arranged in hexagons and pentagons. The SWNT can have a diameter in a range of about 0.5 nanometer (nm) to about 3.5 nm and a length that can be greater than about 50 nm.
A SWNT-containing fullerene product can be synthesized by an arc discharge process in the presence of a Group VIIIb transition metal anode, a laser ablation process, a high frequency plasma process, a thermal decomposition process (a chemical vapor deposition (CVD) process and a catalytic chemical vapor deposition (CCVD) process) wherein fullerene is sublimed at a controlled pressure and brought into contact with a heated catalyst, for example as disclosed by Maruyama PN 20060093545, incorporated herein by reference. These syntheses produce a distribution of fullerene reaction products including a SWNT distribution of diameters and conformations and amorphous and other carbon products including multi-wall carbon nanotubes and metallic catalyst residues. The distribution of reaction products varies depending on the process and process operation conditions.
The fullerene can be deposited on a substrate surface using a sputtering approach, by a sublimation technique, by spin coating or by any other suitable technique. In one method, a SWNT-containing fullerene coating can be applied onto a substrate by a solution evaporation technique using solutions of fullerene dissolved in non-polar organic solvents such as benzene, toluene, etc. These processes form a physisorbed coating. In other embodiments, the fullerene coating is applied to a substrate as the fullerene is formed, for example by sublimation as hereinafter described.
Features of the invention will become apparent from the drawings and following detailed discussion, which by way of example without limitation describe preferred embodiments of the invention.
With reference to FIGS. 1 and 2 , solar cell 10 comprises an upper section comprising an incident surface that comprises an antireflective film 12 and an n-type material layer 14, p-type material layer 16, upper electrode 18 and lower electrode 20. The n-type layer 14 and p-type layer 16 can be any epitaxial structure that forms a p-n junction of different semiconductor compositions. While FIG. 1 and FIG. 2 show a single p-n junction, the FIG. 1 p-n junction can represent a plurality of p-n junctions. For example, the FIG. 1 structure can represent a top cell of gallium indium phosphide, then a “tunnel junction” to allow the flow of electrons between the cells, and a bottom cell of gallium arsenide. Another cell can include a top cell of n-AlInP2/n-GaInP2/p-GaInP2, a tunnel layer of p-GaInAs/n-GaInAs and a bottom cell of n-GaInAs/p-GaInAs and a p+-GaAs substrate.
The p-n layers 14 and 16 and electrodes 18 and 20 are postured on a lower section that includes electric insulating and thermal transmissive substrate of film 22, which is opposed by corresponding electric insulating and thermal transmissive substrate or film 24. Thin film electrical interconnects 26 and 28 are patterned to respective substrate 22 and 24 surfaces 30, 32 as further shown in FIGS. 3 and 4 . The interconnects 22 and 24 are connected in a head to tail fashion by respective p-type semiconductor layers 34 and n-type semiconductor layers 36 to form a continuous electric transmissive pathway as hereinafter described in detail with additional respect to FIGS. 3 and 4 .
The electric insulating and thermal transmissive substrates or films 22 and 24 can be the same or different material and each can be any suitable material that provides a path of relatively low thermal impedance from surface 30 of substrate 22 through surface 32 of substrate 24. In a embodiment, “electrically insulating and thermally conductive” material is a material having substantially no free electric charge to permit the flow of electric current so that when a voltage is placed across the material, no charge or current flows. Additionally, the material has a thermal conductivity greater than its connective material; for example such as the substrate 22 in the figures having a thermal conductivity greater than patterned thin film electric interconnect 26 and/or such as the substrate 24 having a thermal conductivity greater than patterned thin film electric interconnect 28. Suitable materials include those with thermal conductivities between 1 to 100 W/m° K or 50 to 100 W/m° K. In embodiments, the electrically insulating and thermally conductive material can comprise a material having a thermal conductivity greater than 3 W/m° K, desirably greater than 4 W/m° K and preferable greater than 20 W/m° K. A high level of thermal conductivity means the substrate 22 and 24 material allows heat to pass through with ease and dissipates the heat evenly, preventing the build up of problematic hot spots.
For example, the substrate 22 and 24 can be a material with a thermal conductivity of greater than 3 W/m° K. Some appropriate materials include a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), beryllium oxide (BeO) or beryllium nitride (Be3N2). Other suitable materials include polymer film, epoxy cement film, polymer matrix such as a thermoplastic or thermosetting polymer with or without a ceramic filler, alumina, calcium oxide, titanium oxide, silicon oxide, zinc oxide, silicon nitride, aluminum nitride, boron nitride materials and mixtures thereof, silicone sponge, film, gel or grease, a polycrystalline carbon including an appropriately doped fullerene film, metallic oxide layer such as Al2O3 and a thermoplastic molding material such as a polyester. The electrically insulating and thermally conductive material can include epoxy materials and epoxy glass laminates. Another suitable “electrically insulating and thermally conductive” material is a thin film high dielectric material impregnated with a fullerene material.
An Al2O3 ceramic material is one preferred electrically insulating and thermally conductive material. A thermally conductive plastic substrate is another preferred material; for example a thermoplastic or thermosetting polymer matrix having dispersed thermally-conductive electrically-insulating material and optionally a reinforcing material. Polyphenylene sulfide is one suitable polymer. Thermally conductive polymers selected from the group consisting of polystyrene, polyurethane, polyvinyl chloride, polycarbonate, polymethacrylate, polyethylene and polypropylene can be suitable. The dispersed thermally-conductive, electrically-insulating material can be selected from the group consisting of calcium oxide, titanium oxide, silicon oxide, zinc oxide, silicon nitride, aluminum nitride, boron nitride and mixtures thereof. The reinforcing material can be glass, inorganic minerals, or other suitable material which strengthens the polymer matrix. A suitable “electrically insulating and thermally conductive” can comprise a base material having an electrically insulating property, for example a silicone base and a thermally conductive filler.
In one aspect, the invention includes a relatively low melting point material. For example, suitable substrate 22 or 24 materials can include polycarbonates and polymethacrylates. Even polyethylene and polypropylene films may be selected as suitable. These materials can import substantial lightweight and/or flexibility properties.
In FIGS. 3 and 4 , identical parts to be parts of FIGS. 1 and 2 are identified by the same numbers. FIG. 3 is a bottom view of the upper electric insulating and thermal transmissive substrate 22 of solar cell 10 and FIG. 4 is a top view of lower electric insulating and thermal transmissive substrate 24 of cell 10. With reference to FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 , electric insulating and thermal transmissive substrate 22 is shown with a discontinuous or patterned thin film 26 applied to the substrate 22 surfaced 30. Electric insulating and thermal transmissive substrate 24 is shown with a discontinuous or patterned thin film 28 applied to the substrate 24 surface 32.
The structures 22 and 24 of FIG. 3 and FIG. 4 bear a relationship to one another as illustrated in FIG. 2 . The FIG. 2 view is an exploded view of the FIG. 1 solar cell 10. The substrate 22 in FIG. 3 is the FIG. 2 electrical insulator 22 oriented 180° to disclose its underside to show the configuration of thin film 26 on the substrate surface 30. The patterned surface of FIG. 4 substrate 24 comprises a plurality of discontinuous thin film applications 28 that form a system that complements and interacts through layers 34 and 36 (FIGS. 1 and 2 ) with the second and corresponding patterned thin film 26 on flat substrate surface 30. The FIGS. 1 , 2, 3 and 4 taken together illustrate the complementary alignment of thin film patterns 26 and 28. In FIG. 1 and FIG. 2 , the FIG. 3 and FIG. 4 electrically insulating and thermally conductive substrates 22, 24 and folded over together with respective thin film patterned interconnects 26 and 28 facing one another, to form opposing plates of a thermoelectric element. The plates (interconnects 26 and 28) are alternately connected head to tail to form a continuous pathway between electrodes 38 and 40. The electrodes 38 and 40 are connected to load 42 as electrodes 18 and 20 are connected to load 44 (FIG. 1 ). While these figures show separate load 42 and load 44, the FIG. 1 represents any correct connection of circuits to loads, for example, circuits of electrodes 38 and 40 can be connected to a single load in series of parallel with a circuit of electrodes 18 and 20.
The upper portion of solar cell 10, including antireflective film 12, n-type semiconductors 14, p-type semiconductors 16, electrode 18 and electrode 20 and connecting circuit 44, comprises a photovoltaic functioning module. When incident light excites the photoactive material, electrons are released. The released electrons are captured in the form of electrical energy within the electric circuit 44 created between the electrodes 18 and 20. The efficiency of the photoactive materials in generating electric energy is relatable to its thermal content, decreasing with increasing temperature.
A second module of the cell 10 comprises electric insulating and thermal transmissive substrates 22 and 24, patterned thin film electric interconnects 26, patterned thin film electric interconnects 28, p-type semiconductor layers 34, n-type semiconductors layers 36, electrodes 38 and 40 and circuit 44. The electric insulating and thermal transmissive substrate 22 is shown in a heat conductive relationship with the first module via connection to electrode 22 and or a surface of p-type layer 16. In a typical operation, much of the photon energy of incident light on n-layer 14 is not converted to electric current energy but rather is transferred as thermal energy to p-type layer 16. Electric insulating and thermal transmissive substrate 22 initially dissipates some of the thermal energy from the adjacent p-type layer 16 to the cooler corresponding electric insulating and thermal transmissive substrate 24. The substrate 24 acts as a heat sink to set up a thermal gradient from the first module p-type layer and second module electric insulating and thermal transmissive substrate 22, across interconnects 26, 28 and layers 34, 36 to the cooling substrate 24.
The lower module generates electric current from the thermal energy profile between electric insulating and thermal transmissive substrate 22 and corresponding substrate 24. The patterned thin film electric interconnects 26, patterned thin film electric interconnects 28, p-type semiconductors 34 and n-type semiconductors 36 are arranged to provide an end to end electron conducting pathway. The thermoelectric effect of the temperature gradient results in n-type semiconductors 36 of the second module having excessive electrons and the p-type semiconductors 34 having a deficiency, which results in a current flow with load 42. The patterned structures 26 and 28 provide a complementary pathway configuration that converts the thermal energy from the gradient from substrate 22 to substrate 24 into electrical energy (Siebeck effect). The current can be connected with the current through 44 either parallel or serially to supplement the current that is directly generated from the cell 10 photovoltaic effect.
In a embodiment, the cell 10 represents a multijunction cell. A multijunction cell can be constructed from a plurality of independently made cells, at least one with a high bandgap and at least one with a lower bandgap. Then the cells can be stacked, one on top of the other. In another construction, one complete first solar cell can be made and then layers for successive cells can be grown or deposited on the first.
In an embodiment, a photovoltaic cell such as cell solar cell 10, includes semiconductors of opposing conductivity type coupled electrically in series and thermally in parallel by at least one associated patterned thin film electric interconnect, (26 or 28 in the figures), which can be a substantially monolayer film. Preferably, the thin film is applied to a film substrate such as the substrate 22 or 24 of the figures. In an embodiment, the interconnect (26 or 28) thin film can be a fullerence monolayer. As used herein, the term “monolayer” as applied to a film of fullerence means a coating having approximately on layer of fullerene molecules although the properties of the coating may not be significantly affected if the film is slightly more than a molecule thick. Moreover, while a monolayer of fullerene molecules generally packs into a two-dimensional crystalline structure on the substrate, a fullerene coating with minor lattice defects in the monolayer may not alter the desirable properties of the fullerene layer and would be considered a monolayer. Hence in this application, “monolayer” or “monomolecular layer” means a substantially monomolecular thick layer that can be include some molecular overlay and variation in diameter so that the thickness can vary from about 0.5 nm to about 6 nm. Preferably, the monolayer is less than 1 nm thick. In a desired embodiment, the monolayer is less than 1 nm thick to about 3 nm. The monolayer exhibits desirable and even in some instances, enhanced heat dissipating properties without adding significant structure or profile to a thermal energy generating component.
The patterned fullerene electric interconnect 26 or 28 is formed by any suitable method, including a masked vapor deposition process. A suitable vapor-deposition device comprises a reaction chamber capable of maintaining vacuum or lower pressure and a heater such as a resistance heater for vaporizing the fullerene molecules. In one process, the fullerene is sublimed from a powder by heating to a temperature greater than about 450° C. under low pressures, preferably less than about 1×10−6 torr. Preferred sublimation temperatures are included in a range from about 450° C. to about 550° C. In one process, the fullerene powder is heated to a first lower temperature, preferably from about 200° C. to about 350° C. to remove any solvent or other impurities. In this process, the sublimation step can be conducted at less of a reduced pressure but at a higher temperature. However, it is preferred that the sublimation step is conducted at lower pressure, preferably less than about 1×10−8 torr.
The heated fullerene molecules form a vapor-deposited film 26 or 28 on the substrate 22 or 24 surface 30 or 32. In these methods, the film can be selectively applied to the substrate surface 30 or 32 using a mask or lattice structure. Or the film can be deposited, a mask or lattice structure applied and the film selectively etched or otherwise removed to provided a fullerene thin film 26 or 28 pattern of the invention. The mask can be a sacrificial material such as a polycrystalline-silicon. In the depositing step, the fullerene powder can be placed in a porous container or tube and the substrate 22 or 24 placed at the tube or container opposite end. The substrate surface 30 or 32 is protected while the powder is brought to sublimation temperature and pressure. When the sublimation pressure and temperature are reached, the substrate surface 30 or 32 is exposed while maintained at a lower temperature. The fullerene vapor condenses onto the substrate surface 30 or 32 and forms to the substrate surface material.
In an embodiment, the substrate 22 or 24 is swept past a fullerene powder source at a rate to provide desired condensation and deposit. Exposure time and sublimation conditions can be monitored by an appropriate device such as real-space STM atomic imaging device to control deposition to a desired fullerene deposit thickness on the substrate surface 30 or 32. One such method comprises positioning a tunneling tip device at a desired detecting position with respect to the substrate 22 or 24 and controlling application of the fullerene thin film to the substrate surface 30 or 32 according to the positioned tunneling tip device. In this embodiment, control can be according to detection of a current between the tip of the device and the fullerene thin film 26 or 28 depositing on the substrate surface 30 or 32.
In another embodiment, the fullerene thin film 26 or 28 is deposited by sublimation from a solution. For example, the carbon thin film can be applied by a Langmuir-Blodgett (LB) technique or by solution evaporation using a solution of fullerene dissolved in a non-polar organic solvent such as benzene or toluene. The resulting solution is loaded into a resistively heated stainless steel tube oven. The oven is placed into a vacuum chamber, which is evacuated to approximately 10−6 Torr. The oven is then heated to about 150° C. for five minutes. A substrate is rotated above the tube oven opening. The tube is then further heated to at least 450° C., preferably to approximately 550° C. to sublime the fullerene from the solvent onto the substrate surface 30 or 32.
After formation, the fullerene thin film 26 or 28 can be polymerized by methods including photopolymerization, electron beam polymerization, X-ray polymerization, electromagnetic polymerization, micro-wave polymerization method and electronic polymerization. In electron beam polymerization, an electron beam is irradiated from an electron gun. The fullerene molecules are excited by the electron beam and polymerized at an excited state. In X-ray polymerization, X-rays are irradiated from an X-ray tube in place of an electron beam. The fullerene molecules are excited by the X-rays and polymerized at the excited state. These methods produce a fullerene polymer thin film 26 or 28 consisting essentially of fullerene molecules bonded together by covalent bonds.
Suitable plasma polymerization methods include a high-frequency plasma method, a DC plasma method and an ECR plasma method. A typical high-frequency plasma polymerization apparatus can include a vacuum vessel with opposing electrodes. The electrodes are connected to an outer high frequency power source. A molybdenum boat accommodates fullerene starting material within the vessel. The vessel is connected to an external resistance heating power source. In operation, a low-pressure inert gas, such as argon, is introduced into the vacuum vessel. After the vacuum vessel 13 is charged with inert gas, current is supplied to vaporize the fullerene to generate a plasma. The fullerene plasma is illuminated by illuminating electromagnetic waves such as RF plasma, to polymerize the fullerene molecules to deposit as fullerene polymer film. The amount of deposited thin film can be controlled by control of the temperature of the substrate surface 30 or 32. Increasing the temperature, decreases the amount of deposited film. Typically, the substrate surface 30 or 32 is maintained at a temperature 300° C. or less. If plasma power is of the order of 100 W, the temperature need not exceed 70° C. Thickness of the deposited film can be measured to control the film thickness.
As pointed out above, in one method the thin film 26 or 28 patterned structure can fabricated by masking a substrate surface 30 and 32 during a deposition produced or by masking an applied thin film during a subsequent etching step. In the first instance, the mask can define deposition areas to create the patterned areas of the structure of the invention. Typically, the mask is a metal or a ceramic material. However, the mask can be formed of any suitable material. The mask can be made of a material that can be relatively easily removed, such as by physical removal, dissolving in water or in a solvent, by chemically or electrochemically etching, or by vaporizing through heating. The deposition mask can be a metal oxide, such as silicon oxide or aluminum oxide or water-soluble or solvent-soluble salts such as sodium chloride, silver chloride, potassium nitrate, copper sulfate, and indium chloride, or soluble organic materials such as sugar and glucose. The mask material can also be a chemically etchable metal or alloy such as Cu, Ni, Fe, Co, Mo, V, Al, Zn, In, Ag, Cu—Ni alloy, Ni—Fe alloy and others, or base-dissolvable metals such as Al can also be used. The mask can be make of a soluble polymer such as polyvinyl alcohol, polyvinyl acetate, polyacrylamide or acrylonitrile-butadiene-styrene. The removable mask, alternatively, can be a volatile (evaporable) material such as PMMA polymer. These materials can be dissolved in an acid such as hydrochloric acid, aqua regia, or nitric acid, or can be dissolved away in a base solution such as sodium hydroxide or ammonia. The removable layer or mask may also be a vaporizable material such as Zn which can be decomposed or burned away by heat. The mask can be added by physically placing in on the substrate surface 30 or 32 (or on the deposited thin film 26 or 28), by chemical deposition such as electroplating or electroless plating, by physical vapor deposition such as sputtering, evaporation, laser ablation, ion beam deposition, or by chemical vapor decomposition.
In another aspect, the mask can be a metal oxide, such as quartz or sapphire. The metal oxide can be stenciled or patterned into the structures desired, such as holes, circles, and trenches. In another aspect, the deposition targets can be formed by placing an impurity, local defect, or stress on the substrate or the mask. The impurity, local defect, or stress can be placed by x-ray lithography, deep UV lithography, scanning probe lithography, electron bean lithography, ion beam lithography, optical lithography, electrochemical deposition, chemical deposition, electro-oxidation, electroplating, sputtering, thermal diffusion and evaporation, physical vapor deposition, sol-gel deposition, or chemical vapor deposition. In yet another aspect, the location and number of carbon thin films can be controlled by etching at desired location and not etching at all or etching at different rates the areas surrounding the desired area.
Additionally, methods of fabrication of the thin film include lithographic techniques such as optical and scanning probe lithography that fabricate a discontinuance or a structure at a specific location on the substrate. Existing optical and scanning probe lithographic technologies can be used to fabricate holes with controllable diameter at precise locations on the substrate with controllable depth. These methods include x-ray lithography, deep UV lithography, scanning probe lithography, electron beam lithography, ion beam lithography, and optical lithography. Scanning Probe Lithography can be used to fabricate structures, including the holes, with precise control over the of the location and the dimension of the hole. Optical lithography is a technology capable of mass production of structures. Control of the location and dimension of structures, such as the holes, can be performed with precise control.
The thin film patterned substrate 22, 24 can be fabricated by first depositing a thin film according to an above described deposition process or by any other suitable process followed by polymerization of the deposited thin film fullerene. And, the fullerene patterned substrate can be formed and simultaneously polymerized in the same disposition vessel by an exemplary microwave polymerization, electrolytic polymerization or the like. Various polymerization devices and processes are described in Ata et al., U.S. Pat. No. 6,815,067 and Ramm et al., U.S. application Ser. No. 10/439,359 (Publication 20030198021), each of which is incorporated herein by reference in their respective entireties. According to these references, a typical microwave polymerization apparatus includes a molybdenum boat that accommodates fullerene molecules as a starting material. Microwaves generate a depositing fullerene polymer by excitation of vaporized fullerene molecules. An electrolytic polymerization apparatus comprises an electrolytic cell that includes a positive electrode and a negative electrode connected to a potentiostat. A reference electrode is connected to the same potentiostat so that a pre-set electric potential can be applied across the positive/negative electrodes. Fullerene molecules and a supporting electrolyte are charged into the cell. The potentiostat applies a pre-set electrical energy the positive/negative electrodes to form fullerene anionic radicals, which precipitate as a thin fullerene film on the negative electrode and fullerene polymer precipitates and is recovered by filtration or drying and kneading into a resin to form a thin fullerene polymer film.
In some applications of the invention, a thin monolayer fullerene film or fullerene polymer film may be desirable to provide the smallest and lightest possible structure that is an effective conductive structure without changing the electrical insulator substrate properties. In these applications, a thin, even mono-molecular layer can be applied according to one or more procedures. One procedure takes advantage of strong fullerene to substrate bond. The fullerene bond to a metal/semiconductor substrate surface is stronger than inter molecular bonding among fullerene molecules. Desorption temperature is related to bond strength among fullerene molecules or between fullerenes and substrate. Hence, strength of fullerene bonding can be estimated by the temperature at which a fullerene desorbs. For multilayer fullerene molecules on a substrate surface 30 or 32, fullerene desorption temperature is between 225° C. and 300° C. Hence, an applied temperature of higher than 225° C., desirably at least 350° C. and in some applications up to about 450° C. will effect fullerene desorption without disrupting the fullerene to substrate surface 30 or 32 bond. In one process, desorption of excess fullerene beyond a monolayer can be achieved by heating at a temperature from about 225° C. to about 300° C. In one procedure, a fullerene monolayer film is formed by depositing a thin film of fullerene molecules onto the substrate surface 30 or 32 according to any of the above described deposition procedures. Layers of the deposited thin film 26 or 28 are removed to produced a residual film of desired thickness. The layers are removed by selectively breaking fullerene-to-fullerene intermolecular bonds without breaking the fullerene-to-substrate association or bonding and without subjecting the film or substrate to injurious temperatures, by this mechanism, excess fullerene can be removed beyond a desired thickness such as a monolayer, for example by heating to a temperature sufficient to break the fullerene-fullerene bonds without disrupting the fullerene monolayer 26 or 28 that is applied to the substrate surface 30 or 32.
Other methods of selectively breaking the fullerene intermolecular bond include laser beam, ion beam or electron beam selective irradiation. For example, an energetic photon laser beam, electron beam or inert ion beam can be irradiated onto the deposited substrate with a controlled energy that is sufficient to break fullerene-to-fullerene intermolecular bonds without breaking fullerene-to-substrate associations or bonds. The parameters of the beam irradiation depend upon the energy, flux and duration of the beam and also depend on the angle of the beam to the fullerene thin film 26 or 28 deposit. In general, the energy of irradiation is controlled to avoid fullerene molecule decomposition or reaction and to avoid excessive local heating. For example, it is preferred to operate a laser at an energy outside of the ultraviolet range preferably in the visible or infrared range, to avoid reacting fullerene molecules. On the other hand, the laser can be effectively operated in the ultraviolet range to cleave fullerene layers so long as operating conditions such as temperature, pressure and pulsation are controlled. In a preferred embodiment, the laser or other light source is operated in the visible or infrared portion or the spectrum. Light intensity and beam size can be adjusted to produce the desired desorption rate of fullerenes beyond a desired layer thickness such as a monolayer thickness.
If a sublimation step is used to form the initial fullerene thin film, the fullerene layers can be cleaved to a desired thickness in the same vacuum chamber where the substrate surface is cleaned and the fullerene thin film is deposited. Maintaining the substrate under vacuum keeps it clean and reduces beam scattering during irradiation. Additionally the vacuum can prevent fullerene recondensation by removing desorbed fullerene from the irradiation area.
An ion beam is generated by bombarding a molecular flow with high energy electrons that produce an ionization. The ion beam can be directed with electrodes. If an ion beam is used, beam energy and flux should be low enough to avoid decomposing the fullerene or forming higher-ordered fullerene molecules. For example, acceleration voltage can be as high as 3.0 kilovolts for some applications. Desirably, the voltage is between 50 and 1000, and preferably between about 100 and 300 volts. The beam current density can be in the range of about 0.05 to 5.0 mA/cm2 (milliAmperes per square centimeter).
If a gas cluster ion beam is employed, ion clusters are used that have an atomic mass approximating that of the fullerene molecules. A C60 fullerene molecule has an atomic mass unit (AMU) of 720. Beams of clustered ions approximating the mass of the fullerene molecules can be used to inject energy into the multilayer fullerene thin film to break the fullerene-to-fullerene intermolecular bond without depreciating the fullerene molecules. Clusters can be formed by expanding an inert as such as argon, through a supersonic nozzle followed by applying an electron beam or electric arc to form clusters.
The angle of incidence of a directed beam to the fullerene thin film can be varied to control dissociation. In one embodiment, a beam angle relative to irradiated target can be selected between about 25° and about 75°, preferably between 40° and 65°. When ion beam irradiation is used, incident angle is determined by balancing factors such as removal efficiency and precision.
In one aspect of the invention, it has been found that fullerene thin films can be applied to certain substrates that would otherwise be damaged by the conditions of thin film application. For example, fullerene cannot be applied to certain lower melting substrates that would otherwise be damage because of the high temperature requirements for fullerene sublimation. According to this embodiment of the invention, an method of applying a fullerene thin film to a substrate that melts at a temperature lower than the application temperature of the fullerene thin film (lower melting substrate) comprises first applying a fullerene thin film to a first higher melting temperature substrate (melting at a temperature higher than the application temperature of the thin film) to produce a first fullerene thin filmed substrate. The first fullerene thin film substrate is placed in contact with a lower melting temperature substrate with a first surface in contact with an exposed fullerene surface of the fullerene thin film substrate to form a two substrate structure with intermediate fullerene thin film between the substrates. A second fullerene deposit is then applied to an exposed surface of the second substrate and the intermediate fullerene deposit between the two substrates is cleaved to produced two fullerene deposit substrates, one of which is the lower melting temperature substrate. The intermediate fullerene deposit functions to dissipate heat away from the lower melting structure while the second deposit is applied at a temperature that otherwise could damage the lower melting substrate.
In an embodiment, the patterned structure 10 is a substrate 22 or 24 comprising deposited fullerene thin film 26 or 28 with or without a property enhancing dopant. The fullerene pattern of the of the invention can act as a hole transport thin film. The performance characteristics of the hole transport thin film can be determined by the ability of the fullerene to transport the charge carrier. Ohmic loss in the fullerene thin film is related to conductivity, which has a direct effect on operating voltage and also can determines the thermal load transportable by the thin film. By doping at least one of the fullerene hole transport thin film patterns 26 or 28 with a suitable acceptor material (p-doping), the charge carrier density and hence the conductivity is increased.
For example for some applications, the thin film fullerene 26 or 28 can be doped with a donor type (n-type) or acceptor type (p-type) dopant. The dopant can be added to improve electric conductivity and heat stability. In an embodiment, the dopant is a polyanion. An alkali metal such a lithium, sodium, rubidium or cesium is another preferred dopant. Other examples of preferred dopants include alkali-earth metals such as calcium, magnesium, and the like; quaternary amine compounds such as tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, methyltriethylammonium and dimethyldiethylammonium. Preferably, the fullerene is doped to have an increased charge carrier density and effective charge carrier mobility for use as an element of a thermoelectric element.
In one aspect, a hydrogenated form of an organic compound is mixed as a dopant directly into the fullerene. The hydrogenated form of the organic compound is a neutral, nonionic molecule that can undergo complete sublimation. In the process, hydrogen, carbon monoxide, nitrogen or hydroxy radicals are split off and at least one electron is transferred to the fullerene or from the fullerene. Also, the method can use a salt of the organic dopant. Suitable organic dopants include cyclopentadiene, cycloheptatriene, a six-member heterocyclic condensed ring, a carbinol base or xanthene, acridine, diphenylamine, triphenylamine, azine, oxazine, thiazine or thioxanthene derivative. After mixing of the dopant, the mixture can be stimulated with radiation to transfer a charge from the organic dopant to the fullerene.
The fullerene products of the above described syntheses include only a proportion of SWNT product. An upgraded SWNT product having enhanced thermal properties is desirable in some thermoelectric applications. Processes to obtain a fullerene product comprising an upgraded proportion of SWNT from a product of the above syntheses include contacting a fullerene product in the presence of a transition metal element or alloy under a reduced pressure in an inert gas atmosphere. Some direct processes for obtaining an upgraded SWNT product include catalytic laser irradiation, heat treatment and CCVD processes. For example, one SWNT product with less than about 10 wt % other carbon-containing species can be produced by an all-gas phase method using a gaseous transition metal catalyst and a high pressure CO as a carbon feedstock. However, catalyst residue can be left as an impurity in the product material.
Proportion of SWNT in a fullerene synthesis product can be enriched in accordance with certain other procedures to provide an improved and advantageous upgraded SWNT thermal coating and film. In one procedure, a SWNT-containing reaction product is heated under oxidizing conditions as described in Colbert et al. U.S. Pat. No. 7,115,864, incorporated herein by reference, to provide a product that is enriched in at least 80%, preferably at least 90%, more preferably at least 95% and most preferably over 99% SWNT. In the present application, an upgraded SWNT is a reaction product comprising at least 80% pure SWNT. The upgraded SWNT has been found to be particularly useful as a heat dissipating coating or film in combination with a thermal energy generating component.
In the Colbert et al. upgrade, a SWNT-containing product composition is heated in an aqueous solution of an inorganic oxidant, such as nitric acid, a mixture of hydrogen peroxide and sulfuric acid or potassium permanganate to remove amorphous carbon and other contaminants. The SWNT-containing synthesis product can be refluxed in an aqueous solution of the oxidizing acid at a concentration high enough to etch away the amorphous carbon deposits within a practical time frame, but not so high a concentration that the SWNT material will be etched to a significant degree. Nitric acid at concentrations from 2.0 to 2.6 M is suitable. At atmospheric pressure, the reflux temperature of the aqueous acid solution can be about 102° C.
In a preferred upgrade process, a SWNT-containing product can be refluxed in a nitric acid solution at a concentration of 2.6 M for 24 hours. The upgraded product can be separated from the oxidizing acid by filtration. Preferably, a second 24 hour period of refluxing in a fresh nitric solution of the same concentration can be employed followed by filtration. Refluxing under acidic oxidizing conditions may result in the esterification of some of the nanotubes, or nanotube contaminants. The contaminating ester material may be removed by saponification, for example, by using a sodium hydroxide solution in ethanol at room temperature for 12 hours. Other conditions suitable for saponification of ester linked polymers can be used. For example, saponification can be accomplished with a sodium hydroxide solution in ethanol at room temperature for 12 hours. The SWNT-containing product can be neutralized after the saponification step. Refluxing the SWNT-containing product in 6M aqueous hydrochloric acid for 12 hours is one suitable neutralization.
After oxidation, saponification and neutralization, the SWNT-containing product can be collected by settling or filtration to a thin mat form of purified bundles of SWNT. In typical example, the upgraded SWNT-containing product is filtered and neutralized to provide a black mat of upgraded SWNT about 100 microns thick. The SWNT in the mat may be of varying lengths and may comprises individual SWNTs and of up to 103 SWNT bundles and mixtures of individual SWNTs of various thicknesses. A product that comprises nanotubes that are homogeneous in length, diameter and/or molecular structure can be recovered from the mat by fractionation. The upgrade SWNT can then be dried, for example by baking at 850° C. in a hydrogen as atmosphere to produce a dry upgraded SWNT product.
According to one Colbert et al. procedure, an initial cleaning in HNO3 can convert amorphous carbon in a SWNT product to various sizes of linked polycyclic compounds. The base solution ionizes most of the polycyclic compounds, making them more soluble in aqueous solution. Then, the SWNT mat product can be refluxed in HNO3. The SWNT product can be filtered and washed with NaOH solution. Next, the filtered SWNT product is polished by stirring in a Sulfuric acid/Nitric acid solution. This step removes essentially all remaining material from the SWNT product that was produced during the nitric acid treatment. Then, the SWNT product is diluted and the product again filtered. The SWNT product is again washed with a NaOH solution.
Smalley et al. U.S. Pat. No. 6,183,713 incorporated herein by reference, discloses a method to make a SWNT reaction product by laser vaporizing a mixture of carbon and one or more Group VIII transition metals. Single-wall carbon nanotubes preferentially form in the vapor. The SWNT product is fixed in a high temperature zone where the Group VIII transition metal catalyzes further SWNT growth. In one Smalley et al. embodiment, two separate laser pulses are utilized with the second pulse timed to be absorbed by the vapor created by the first pulse. Colbert et al. subjected a Smalley et al. two laser method-produced SWNT product to refluxing in nitric acid, one solvent exchange, and sonification in saturated NaOH in ethanol. The product was neutralized and baked in a hydrogen as atmosphere at 850° C. The procedure produced a >99% pure upgraded SWNT that can be applied to a substrate to from the upgrade SWNT film of the inventive thermal dissipating surfacing.
An aligned nanotube, particularly aligned SWNT coating or film is another preferred embodiment of the invention. Aligned carbon nanotube arrays can be synthesized in a hot filament plasma enhanced chemical vapor deposition (HF-PECVD) system. A variety of substrates (metal, glass, silicon, etc) are first coated with nickel nanoparticles and then introduced into the CVD chamber. The method of nickel nanoparticle deposition defines the nanotube site density. Standard aligned carbon nanotube arrays are produced on a nickel sputtering-coated substrate, whereas low site-density carbon nanotube arrays are produced on a nickel electric-chemical-coated substrate.
The fullerene can include a thermal transfer enhancing additive or dopant, for example encapsulation of one or more metal atoms encapsulated inside a fullerene “cage” or NT. Examples include Sc@C-82, Y@C-82, La@C-82, Gd@C-82, La-2@jC-80, Sc-2@C-84 and alkali metal, Fe, Cr and Ni and silicon-doped fullerene film and NT.
Photovoltaic cells can electrically connected in series and/or in parallel to create a photovoltaic module. Typically, two photovoltaic cells are connected in parallel by electrically connecting the cathode of one cell with the cathode of the other cell, and the anode of one cell with the anode of the other cell. In general, two photovoltaic cells are connected in series by electrically connecting the anode on one cell with the cathode of the other cell. In an embodiment, one or more photovoltaic functions are connected in series with one or more thermoelectric functions by connecting a cathode of a cell of the photovoltaic functions with a cathode of a thermoelectric function and an anode of the photovoltaic functioning cell is connected with the anode of the photovoltaic function.
When more power is required than a single cell can deliver, cells can be grouped together to form modules or panels that can be arranged in arrays. Such solar arrays have been used to power orbiting satellites and other spacecraft and in remote areas as a source of power for applications such as roadside emergency telephones, remote sensing, and cathodic protection of pipelines. Decline of cost of these panels or arrays is expanding the range of cost-effective uses, for example to road signs, home power generation, pocket calculators and communication devices and even for grid-connected electricity generation.
Solar cells have many applications. In one application, the cells are used where electrical power from a grid is unavailable, such as in remote area power systems, Earth-orbiting satellites and space probes, consumer system, e.g. handheld calculators or wrist watches, remote radiotelephones and water pumping applications. More recently, they are starting to be used in assemblies of solar modules (photovoltaic arrays) connected to the electricity grid through an inverter, often in combination with a net metering arrangement.
While preferred embodiments of the invention have been described, the present invention is capable of variation and modification and therefore should not be limited to the precise details of the Examples. Thus while the invention has been described relative to a photovoltaic cell preferred embodiment, other preferred embodiments may include infrared sensors, chemical detectors, Photoresistors or light dependent resistors (LDR) photodiodes, photocathodes, pyroelectric detectors, other types of photovoltaic cells, which can operate in photovoltaic mode or photoconductive mode, photomultiplier tubes containing a photocathode, which emits electrons when illuminated, phototubes containing a photocathode, which emits electrons when illuminated and in general behaves as photoresistor, phototransistor, optical detectors that are effectively thermometers, responding purely to the heating effect of the incoming radiation, such as pyroelectric detectors, Golay cells, thermocouples and thermistors and cryogenic detectors are sufficiently sensitive to measure the energy of single x-ray, visible and near infra-red photons (Enss 2005). The invention includes changes and alterations that fall within the purview of the following claims.
Claims (16)
1. A photodetector, comprising:
a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier; and
another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the first section,
wherein the semiconductors of opposing conductivity type comprise at least one p-type semiconductor and at least one n-type semiconductor coupled electrically in series and thermally in parallel by at least one associated surface with a discontinuous patterned monolayer thin film less than 1 nm to about 3 nm thick.
2. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series by at least one associated thin film.
3. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least two surface discontinuous patterned thin films, each surface comprising an arrangement of defined, systematic electrically conductive shapes on a regular flat surface.
4. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by two surface discontinuous patterned thin films, each surface comprising an arrangement of defined, systematic electrically conductive shapes on a regular flat surface with associated at least one pair of p-type semiconductor and n-type semiconductor sandwiched between the two films wherein the systematic electrically conductive shapes of respective thin films are complementarily postured to form an uninterrupted conductive circuit with the associated at least one p-type semiconductor and the at least one n-type semi conduct.
5. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least one associated surface with a discontinuous patterned monolayer thin film less than 1 nm to about 3 nm thick.
6. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least one associated surface discontinuous fullerene patterned thin film.
7. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least one associated surface with a discontinuous patterned carbon nanotube thin film.
8. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least one associated surface with a discontinuous patterned upgraded SWNT thin film.
9. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least one associated surface with a discontinuous patterned thin film comprising at least 95% SWNT.
10. The photodetector of claim 1 , wherein the semiconductors of opposing conductivity type comprising at least one p-type semiconductor and at least one n-type semiconductor are coupled electrically in series and thermally in parallel by at least one associated surface with a discontinuous patterned thin film comprising substantially aligned SWNT.
11. The photodetector of claim 1 , comprising an electric insulating and thermal transmissive substrate comprising a semiconductive material in thermal transmissive contact with the first section.
12. The photodetector of claim 1 , comprising a first electric insulating and thermal transmissive substrate in thermal conducting contact with the first section and another electric insulating and thermal transmissive film opposing and parallel to the first electric insulating and thermal transmissive substrate or film.
13. A photodetector, comprising:
a first section comprising at least one p-n junction that converts photon energy into a separate charge carrier and hole carrier;
another section of semiconductors of opposing conductivity type connected electrically in series and thermally in parallel in a heat dissipating and electric generating relationship to the first section;
and an electric insulating and thermal transmissive substrate comprising a semiconductive material in thermal transmissive contact with the first section.
14. The photodetector of claim 13 , wherein the semiconductors of opposing conductivity type comprise at least one p-type semiconductor and at least one n-type semiconductor coupled electrically in series by at least one associated thin film.
15. The photodetector of claim 13 , wherein the semiconductors of opposing conductivity type comprise at least one p-type semiconductor and at least one n-type semiconductor coupled electrically in series and thermally in parallel by at least two surface discontinuous patterned thin films, each surface comprising an arrangement of defined, systematic electrically conductive shapes on a regular flat surface.
16. The photodetector of claim 13 , wherein the semiconductors of opposing conductivity type comprise at least one p-type semiconductor and at least one n-type semiconductor coupled electrically in series and thermally in parallel by two surface discontinuous patterned thin films, each surface comprising an arrangement of defined, systematic electrically conductive shapes on a regular flat surface with associated at least one pair of p-type semiconductor and n-type semiconductor sandwiched between the two films wherein the systematic electrically conductive shapes of respective thin films are complementarily postured to form an uninterrupted conductive circuit with the associated at least one p-type semiconductor and the at least one n-type semiconductor.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/781,853 US7800194B2 (en) | 2002-04-23 | 2007-07-23 | Thin film photodetector, method and system |
US11/931,591 US20080230110A1 (en) | 2002-04-23 | 2008-06-09 | Thin film photodetector, method and system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/127,585 US7208191B2 (en) | 2002-04-23 | 2002-04-23 | Structure with heat dissipating device and method |
US11/381,583 US8907323B2 (en) | 2002-04-23 | 2006-05-04 | Microprocessor assembly |
US11/627,961 US20070122622A1 (en) | 2002-04-23 | 2007-01-27 | Electronic module with thermal dissipating surface |
US11/781,853 US7800194B2 (en) | 2002-04-23 | 2007-07-23 | Thin film photodetector, method and system |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/381,583 Continuation-In-Part US8907323B2 (en) | 2002-04-23 | 2006-05-04 | Microprocessor assembly |
US11/627,961 Continuation-In-Part US20070122622A1 (en) | 2002-04-23 | 2007-01-27 | Electronic module with thermal dissipating surface |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/931,591 Division US20080230110A1 (en) | 2002-04-23 | 2008-06-09 | Thin film photodetector, method and system |
Publications (2)
Publication Number | Publication Date |
---|---|
US20070290287A1 US20070290287A1 (en) | 2007-12-20 |
US7800194B2 true US7800194B2 (en) | 2010-09-21 |
Family
ID=38860708
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/781,853 Expired - Fee Related US7800194B2 (en) | 2002-04-23 | 2007-07-23 | Thin film photodetector, method and system |
US11/931,591 Abandoned US20080230110A1 (en) | 2002-04-23 | 2008-06-09 | Thin film photodetector, method and system |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/931,591 Abandoned US20080230110A1 (en) | 2002-04-23 | 2008-06-09 | Thin film photodetector, method and system |
Country Status (1)
Country | Link |
---|---|
US (2) | US7800194B2 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100272985A1 (en) * | 2009-04-24 | 2010-10-28 | Mon-Shu Ho | Method of forming self-assembly and uniform fullerene array on surface of substrate |
RU2461093C1 (en) * | 2011-02-18 | 2012-09-10 | Учреждение Российской Академии Наук Научно-Технологический Центр Микроэлектроники И Субмикронных Гетероструктур Ран | METHOD OF MAKING SEMICONDUCTOR STRUCTURE WITH p-n JUNCTIONS |
US8669635B2 (en) * | 2008-10-20 | 2014-03-11 | 3M Innovative Properties Company | Electrically conductive nanocomposite material and thermoelectric device comprising the material |
US9147845B2 (en) | 2013-04-26 | 2015-09-29 | Samsung Electronics Co., Ltd. | Single walled carbon nanotube-based planar photodector |
US9515244B2 (en) | 2009-12-15 | 2016-12-06 | Consorzio Delta Ti Research | Seebeck/Peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process |
US9584061B1 (en) * | 2015-09-17 | 2017-02-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Electric drive systems including smoothing capacitor cooling devices and systems |
RU2622495C1 (en) * | 2016-03-25 | 2017-06-15 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Юго-Западный государственный университет" (ЮЗГУ) | Hiking heliothermelectric power station |
US10141492B2 (en) | 2015-05-14 | 2018-11-27 | Nimbus Materials Inc. | Energy harvesting for wearable technology through a thin flexible thermoelectric device |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10367131B2 (en) | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10553773B2 (en) | 2013-12-06 | 2020-02-04 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
RU2780579C1 (en) * | 2022-02-14 | 2022-09-27 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Юго-Западный государственный университет" (ЮЗГУ) | Solar thermal power plant |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100304521A1 (en) * | 2006-10-09 | 2010-12-02 | Solexel, Inc. | Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells |
US8035027B2 (en) | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells |
ATE553504T1 (en) * | 2007-02-20 | 2012-04-15 | Efw Inc | TEMPERATURE CONTROLLED PHOTO DETECTOR |
TWI341349B (en) * | 2007-04-16 | 2011-05-01 | Asustek Comp Inc | Optoelectronic transformation structure and temperature control system using the same |
JP4850127B2 (en) * | 2007-05-30 | 2012-01-11 | 三洋電機株式会社 | Solid electrolytic capacitor and manufacturing method thereof |
WO2009023881A1 (en) * | 2007-08-23 | 2009-02-26 | Universität Linz | Apparatus for converting of infrared radiation into electrical current |
US7824741B2 (en) * | 2007-08-31 | 2010-11-02 | Micron Technology, Inc. | Method of forming a carbon-containing material |
US8420926B1 (en) * | 2007-10-02 | 2013-04-16 | University Of Central Florida Research Foundation, Inc. | Hybrid solar cell integrating photovoltaic and thermoelectric cell elements for high efficiency and longevity |
US10446733B2 (en) | 2007-10-02 | 2019-10-15 | University Of Central Florida Research Foundation, Inc. | Hybrid solar cell |
EP2099079A1 (en) * | 2008-03-05 | 2009-09-09 | Stichting IMEC Nederland | Hybrid energy scavenger comprising thermopile unit and photovoltaic cells |
WO2010030409A1 (en) * | 2008-04-04 | 2010-03-18 | Zingher Arthur R | Scalable dense pv solar receiver for high concentration |
US20100006136A1 (en) * | 2008-07-08 | 2010-01-14 | University Of Delaware | Multijunction high efficiency photovoltaic device and methods of making the same |
TWI393881B (en) * | 2008-08-28 | 2013-04-21 | Univ Nat Cheng Kung | Photoinduced dielectric electrophoresis chip |
RU2513649C2 (en) * | 2008-11-04 | 2014-04-20 | Итон Корпорейшн | Combined production of heat and electric energy for residential and industrial buildings with application of solar energy |
KR101020475B1 (en) | 2008-11-28 | 2011-03-08 | 한양대학교 산학협력단 | Unified module of photovoltaic cell - thermoelectric device, method for fabricating the same |
US8325947B2 (en) * | 2008-12-30 | 2012-12-04 | Bejing FUNATE Innovation Technology Co., Ltd. | Thermoacoustic device |
US20120097217A1 (en) * | 2009-05-15 | 2012-04-26 | Huiming Yin | Functionally Graded Solar Roofing Panels and Systems |
JP4951088B2 (en) * | 2009-05-21 | 2012-06-13 | 韓國電子通信研究院 | Thermoelectric element using radiant heat as heat source and method for manufacturing the same |
JP5500876B2 (en) * | 2009-06-08 | 2014-05-21 | キヤノン株式会社 | Method for manufacturing photoelectric conversion device |
EP2444371B1 (en) * | 2009-06-16 | 2019-02-20 | Fujitsu Limited | Graphite structure |
FR2947099B1 (en) * | 2009-06-17 | 2013-11-15 | Cynegy Holdings France | PHOTOVOLTAIC TILE FOR ROOF |
DE102009051950A1 (en) * | 2009-11-04 | 2011-05-12 | Benteler Automobiltechnik Gmbh | Connection between a thermoelectric element and a heat exchanger |
US9337360B1 (en) | 2009-11-16 | 2016-05-10 | Solar Junction Corporation | Non-alloyed contacts for III-V based solar cells |
CN102075114A (en) * | 2009-11-20 | 2011-05-25 | 富准精密工业(深圳)有限公司 | Lamp and solar automatic tracking device thereof |
US20110155214A1 (en) * | 2009-12-31 | 2011-06-30 | Du Pont Apollo Limited | Photovoltaic module having thermoelectric cooling module |
IT1399627B1 (en) * | 2010-04-20 | 2013-04-26 | Italcementi Spa | CEMENTITIOUS MANUFACTURE SUITABLE FOR A PARTICULAR WHICH SUPPORT FOR A PHOTOVOLTAIC THIN FILM MODULE, AND METHOD FOR ITS PRODUCTION |
US9214586B2 (en) | 2010-04-30 | 2015-12-15 | Solar Junction Corporation | Semiconductor solar cell package |
US8969717B2 (en) * | 2010-08-12 | 2015-03-03 | Aeris Capital Sustainable Ip Ltd. | Thermoelectric stack coating for improved solar panel function |
US8962988B2 (en) | 2011-02-03 | 2015-02-24 | Solar Junction Corporation | Integrated semiconductor solar cell package |
US8859892B2 (en) | 2011-02-03 | 2014-10-14 | Solar Junction Corporation | Integrated semiconductor solar cell package |
US8728845B2 (en) * | 2011-03-24 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for selectively removing anti-stiction coating |
IL212261A0 (en) * | 2011-04-11 | 2011-07-31 | Lamos Inc | Anodized aluminum substrate |
CA2854543A1 (en) | 2011-11-02 | 2013-05-10 | Cardinal Solar Technologies Company | Thermoelectric device technology |
CN102437212A (en) * | 2011-11-22 | 2012-05-02 | 北京航空航天大学 | Photoelectric-thermoelectric integrated battery pack |
WO2014104980A1 (en) * | 2012-12-31 | 2014-07-03 | Tum Create Limited | Electrochemical cell, method of fabricating the same and method of generating current |
ES2549828B1 (en) * | 2014-04-30 | 2016-07-14 | Universitat De València | Organic thermoelectric device, thermoelectric system, method for manufacturing the device, cladding for enclosure, enclosure and thermoelectric solar hybrid system |
US9685598B2 (en) * | 2014-11-05 | 2017-06-20 | Novation Iq Llc | Thermoelectric device |
US9385321B1 (en) * | 2014-12-17 | 2016-07-05 | Freescale Semiconductor, Inc. | Real-space charge-transfer device and method thereof |
US10270386B2 (en) * | 2015-08-31 | 2019-04-23 | Oceaneering International, Inc. | Photovolatic powered cathodic protection probe |
US10090420B2 (en) | 2016-01-22 | 2018-10-02 | Solar Junction Corporation | Via etch method for back contact multijunction solar cells |
US10043962B2 (en) * | 2016-05-05 | 2018-08-07 | Globalfoundries Inc. | Thermoelectric cooling using through-silicon vias |
US9680035B1 (en) | 2016-05-27 | 2017-06-13 | Solar Junction Corporation | Surface mount solar cell with integrated coverglass |
RU170833U1 (en) * | 2016-12-07 | 2017-05-11 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | OPTICAL VISIBLE RADIATION DETECTOR |
US10757835B2 (en) * | 2016-12-09 | 2020-08-25 | Rambus Inc. | Cooling technology for cryogenic link |
WO2018230031A1 (en) * | 2017-06-16 | 2018-12-20 | 三菱電機株式会社 | Photovoltaic power generation panel and method for manufacturing same |
CN111092596A (en) * | 2019-11-22 | 2020-05-01 | 北京理工大学 | Solar power generation and thermoelectric power generation integrated system for artificial satellite |
CN111048614B (en) * | 2019-12-02 | 2021-11-26 | 上海第二工业大学 | Integrated photovoltaic thermoelectric coupling device and manufacturing method thereof |
CN114199372A (en) * | 2021-12-03 | 2022-03-18 | 大连理工大学 | Self-supporting flexible optical power strength testing device and preparation method thereof |
Citations (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4082570A (en) | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
US4200472A (en) | 1978-06-05 | 1980-04-29 | The Regents Of The University Of California | Solar power system and high efficiency photovoltaic cells used therein |
US4251288A (en) | 1979-12-06 | 1981-02-17 | Atlantic Richfield Company | Photovoltaic device with specially arranged luminescent collector and cell |
US4328390A (en) | 1979-09-17 | 1982-05-04 | The University Of Delaware | Thin film photovoltaic cell |
US4404422A (en) | 1980-09-26 | 1983-09-13 | Unisearch Limited | High efficiency solar cell structure |
US4444992A (en) | 1980-11-12 | 1984-04-24 | Massachusetts Institute Of Technology | Photovoltaic-thermal collectors |
EP0178148A2 (en) | 1984-10-09 | 1986-04-16 | Xerox Corporation | Thin film photodetector |
US4776894A (en) | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPH04280482A (en) * | 1991-03-08 | 1992-10-06 | Oki Electric Ind Co Ltd | Cooling device utilizing solar light |
US5269851A (en) | 1991-02-25 | 1993-12-14 | United Solar Technologies, Inc. | Solar energy system |
US5482560A (en) | 1994-07-27 | 1996-01-09 | American Maize Technology, Inc. | Beta-limit dextrin from dull waxy starch |
US5482570A (en) | 1992-07-29 | 1996-01-09 | Asulab S.A. | Photovoltaic cell |
US5547774A (en) | 1992-10-08 | 1996-08-20 | International Business Machines Corporation | Molecular recording/reproducing method and recording medium |
US5714791A (en) | 1995-12-22 | 1998-02-03 | International Business Machines Corporation | On-chip Peltier cooling devices on a micromachined membrane structure |
US5885368A (en) | 1995-09-13 | 1999-03-23 | Hoechst Aktiengesellschaft | Photovoltaic cell |
US5944913A (en) | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
US6072116A (en) | 1998-10-06 | 2000-06-06 | Auburn University | Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices |
US6281430B1 (en) * | 1999-02-09 | 2001-08-28 | Sony International (Europe) Gmbh | Electronic device comprising a columnar discotic phase |
US6282907B1 (en) * | 1999-12-09 | 2001-09-04 | International Business Machines Corporation | Thermoelectric cooling apparatus and method for maximizing energy transport |
US6347521B1 (en) | 1999-10-13 | 2002-02-19 | Komatsu Ltd | Temperature control device and method for manufacturing the same |
US20020027238A1 (en) * | 2000-09-06 | 2002-03-07 | Chih-Hsiang Lin | Double heterostructure photodiode with graded minority-carrier blocking structures |
US6479743B2 (en) | 2000-12-28 | 2002-11-12 | Guy Andrew Vaz | Photon power cell |
US6512291B2 (en) * | 2001-02-23 | 2003-01-28 | Agere Systems Inc. | Flexible semiconductor device support with integrated thermoelectric cooler and method for making same |
US20030236335A1 (en) | 2002-05-13 | 2003-12-25 | Miller James D. | Thermally-conductive plastic substrates for electronic circuits and methods of manufacturing same |
US6689949B2 (en) | 2002-05-17 | 2004-02-10 | United Innovations, Inc. | Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies |
WO2004057674A2 (en) | 2002-12-20 | 2004-07-08 | Cambridge Display Technology Limited | Electrical connection of optoelectronic devices |
US20040262744A1 (en) | 2001-01-19 | 2004-12-30 | Chevron U.S.A. Inc. | Diamondoid-containing thermally conductive materials |
US20050045702A1 (en) | 2003-08-29 | 2005-03-03 | William Freeman | Thermoelectric modules and methods of manufacture |
US20050274409A1 (en) | 2004-06-15 | 2005-12-15 | The Boeing Company | Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer |
US20060005944A1 (en) | 2004-07-06 | 2006-01-12 | Jack Wang | Thermoelectric heat dissipation device and method for fabricating the same |
US7076965B2 (en) | 2001-03-28 | 2006-07-18 | John Beavis Lasich | Cooling circuit for receiver of solar radiation |
US20060185725A1 (en) | 2002-10-31 | 2006-08-24 | Navid Fatemi | Method of forming multijuction solar cell structure with high band gap heterojunction middle cell |
US20060225782A1 (en) | 2005-03-21 | 2006-10-12 | Howard Berke | Photovoltaic cells having a thermoelectric material |
US20060243317A1 (en) | 2003-12-11 | 2006-11-02 | Rama Venkatasubramanian | Thermoelectric generators for solar conversion and related systems and methods |
US7180231B2 (en) | 2001-03-21 | 2007-02-20 | Advanced Electron Beams, Inc. | Electron beam emitter |
US20070054435A1 (en) | 2005-09-06 | 2007-03-08 | Seokhyun Yoon | Process for preparation of absorption layer of solar cell |
US7188797B2 (en) | 2002-08-23 | 2007-03-13 | Fuji Photo Film Co., Ltd. | Magnetic tape cartridge |
US20070082140A1 (en) | 2005-03-28 | 2007-04-12 | Hiroyuki Suzuki | Manufacturing method of laminated body, manufacturing organic device and organic thin-film solar cell using same, and organic device and organic thin-film solar cell |
US20070153414A1 (en) | 2005-12-30 | 2007-07-05 | Michael Sullivan | External cover for controlling the temperature of an internal thermal zone of a hard disk drive |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2984696A (en) * | 1959-03-09 | 1961-05-16 | American Mach & Foundry | Solar thermoelectric generators |
US3031516A (en) * | 1961-03-08 | 1962-04-24 | Rca Corp | Method and materials for obtaining low-resistance bonds to thermoelectric bodies |
US3999283A (en) * | 1975-06-11 | 1976-12-28 | Rca Corporation | Method of fabricating a photovoltaic device |
US4045246A (en) * | 1975-08-11 | 1977-08-30 | Mobil Tyco Solar Energy Corporation | Solar cells with concentrators |
JPH0795602B2 (en) * | 1989-12-01 | 1995-10-11 | 三菱電機株式会社 | Solar cell and manufacturing method thereof |
US5998099A (en) * | 1996-03-08 | 1999-12-07 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5936193A (en) * | 1997-05-09 | 1999-08-10 | Parise; Ronald J. | Nighttime solar cell |
KR100304255B1 (en) * | 1998-01-14 | 2001-11-22 | 윤종용 | Apparatus and method for cooling non-flow system |
US6288699B1 (en) * | 1998-07-10 | 2001-09-11 | Sharp Kabushiki Kaisha | Image display device |
US6471929B1 (en) * | 1999-06-25 | 2002-10-29 | Sony Corporation | Photocatalyst, manufacturing method therefor, and gas decomposition method |
US6586579B1 (en) * | 1999-09-03 | 2003-07-01 | The Burnham Institute | PR-domain containing nucleic acids, polypeptides, antibodies and methods |
CN1464916A (en) * | 2000-06-01 | 2003-12-31 | 西加特技术有限责任公司 | Process for production of ultrathin protective overcoats |
JP2003536189A (en) * | 2000-06-02 | 2003-12-02 | シーゲイト テクノロジー エルエルシー | Method of producing ultra-thin protective overcoating |
US6783589B2 (en) * | 2001-01-19 | 2004-08-31 | Chevron U.S.A. Inc. | Diamondoid-containing materials in microelectronics |
JP3991602B2 (en) * | 2001-03-02 | 2007-10-17 | 富士ゼロックス株式会社 | Carbon nanotube structure manufacturing method, wiring member manufacturing method, and wiring member |
JP2003101082A (en) * | 2001-09-27 | 2003-04-04 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
US20030099883A1 (en) * | 2001-10-10 | 2003-05-29 | Rosibel Ochoa | Lithium-ion battery with electrodes including single wall carbon nanotubes |
US6965513B2 (en) * | 2001-12-20 | 2005-11-15 | Intel Corporation | Carbon nanotube thermal interface structures |
US6689674B2 (en) * | 2002-05-07 | 2004-02-10 | Motorola, Inc. | Method for selective chemical vapor deposition of nanotubes |
US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7182231B1 (en) * | 2004-04-08 | 2007-02-27 | Lori Greiner | Garment hanger |
DE102005012104A1 (en) * | 2005-03-10 | 2006-09-14 | Schefenacker Vision Systems Germany Gmbh | Housing, in particular mirror housing |
US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
-
2007
- 2007-07-23 US US11/781,853 patent/US7800194B2/en not_active Expired - Fee Related
-
2008
- 2008-06-09 US US11/931,591 patent/US20080230110A1/en not_active Abandoned
Patent Citations (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4082570A (en) | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
US4200472A (en) | 1978-06-05 | 1980-04-29 | The Regents Of The University Of California | Solar power system and high efficiency photovoltaic cells used therein |
US4328390A (en) | 1979-09-17 | 1982-05-04 | The University Of Delaware | Thin film photovoltaic cell |
US4251288A (en) | 1979-12-06 | 1981-02-17 | Atlantic Richfield Company | Photovoltaic device with specially arranged luminescent collector and cell |
US4404422A (en) | 1980-09-26 | 1983-09-13 | Unisearch Limited | High efficiency solar cell structure |
US4444992A (en) | 1980-11-12 | 1984-04-24 | Massachusetts Institute Of Technology | Photovoltaic-thermal collectors |
EP0178148A2 (en) | 1984-10-09 | 1986-04-16 | Xerox Corporation | Thin film photodetector |
US4776894A (en) | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
US5269851A (en) | 1991-02-25 | 1993-12-14 | United Solar Technologies, Inc. | Solar energy system |
JPH04280482A (en) * | 1991-03-08 | 1992-10-06 | Oki Electric Ind Co Ltd | Cooling device utilizing solar light |
US5482570A (en) | 1992-07-29 | 1996-01-09 | Asulab S.A. | Photovoltaic cell |
US5547774A (en) | 1992-10-08 | 1996-08-20 | International Business Machines Corporation | Molecular recording/reproducing method and recording medium |
US5482560A (en) | 1994-07-27 | 1996-01-09 | American Maize Technology, Inc. | Beta-limit dextrin from dull waxy starch |
US5885368A (en) | 1995-09-13 | 1999-03-23 | Hoechst Aktiengesellschaft | Photovoltaic cell |
US5714791A (en) | 1995-12-22 | 1998-02-03 | International Business Machines Corporation | On-chip Peltier cooling devices on a micromachined membrane structure |
US5944913A (en) | 1997-11-26 | 1999-08-31 | Sandia Corporation | High-efficiency solar cell and method for fabrication |
US6072116A (en) | 1998-10-06 | 2000-06-06 | Auburn University | Thermophotovoltaic conversion using selective infrared line emitters and large band gap photovoltaic devices |
US6281430B1 (en) * | 1999-02-09 | 2001-08-28 | Sony International (Europe) Gmbh | Electronic device comprising a columnar discotic phase |
US6347521B1 (en) | 1999-10-13 | 2002-02-19 | Komatsu Ltd | Temperature control device and method for manufacturing the same |
US6282907B1 (en) * | 1999-12-09 | 2001-09-04 | International Business Machines Corporation | Thermoelectric cooling apparatus and method for maximizing energy transport |
US20020027238A1 (en) * | 2000-09-06 | 2002-03-07 | Chih-Hsiang Lin | Double heterostructure photodiode with graded minority-carrier blocking structures |
US6479743B2 (en) | 2000-12-28 | 2002-11-12 | Guy Andrew Vaz | Photon power cell |
US20040262744A1 (en) | 2001-01-19 | 2004-12-30 | Chevron U.S.A. Inc. | Diamondoid-containing thermally conductive materials |
US6512291B2 (en) * | 2001-02-23 | 2003-01-28 | Agere Systems Inc. | Flexible semiconductor device support with integrated thermoelectric cooler and method for making same |
US7180231B2 (en) | 2001-03-21 | 2007-02-20 | Advanced Electron Beams, Inc. | Electron beam emitter |
US7076965B2 (en) | 2001-03-28 | 2006-07-18 | John Beavis Lasich | Cooling circuit for receiver of solar radiation |
US20030236335A1 (en) | 2002-05-13 | 2003-12-25 | Miller James D. | Thermally-conductive plastic substrates for electronic circuits and methods of manufacturing same |
US6689949B2 (en) | 2002-05-17 | 2004-02-10 | United Innovations, Inc. | Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies |
US7188797B2 (en) | 2002-08-23 | 2007-03-13 | Fuji Photo Film Co., Ltd. | Magnetic tape cartridge |
US20060185725A1 (en) | 2002-10-31 | 2006-08-24 | Navid Fatemi | Method of forming multijuction solar cell structure with high band gap heterojunction middle cell |
WO2004057674A2 (en) | 2002-12-20 | 2004-07-08 | Cambridge Display Technology Limited | Electrical connection of optoelectronic devices |
US20050045702A1 (en) | 2003-08-29 | 2005-03-03 | William Freeman | Thermoelectric modules and methods of manufacture |
US20060243317A1 (en) | 2003-12-11 | 2006-11-02 | Rama Venkatasubramanian | Thermoelectric generators for solar conversion and related systems and methods |
US20050274409A1 (en) | 2004-06-15 | 2005-12-15 | The Boeing Company | Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer |
US20060005944A1 (en) | 2004-07-06 | 2006-01-12 | Jack Wang | Thermoelectric heat dissipation device and method for fabricating the same |
US20060225782A1 (en) | 2005-03-21 | 2006-10-12 | Howard Berke | Photovoltaic cells having a thermoelectric material |
US20070082140A1 (en) | 2005-03-28 | 2007-04-12 | Hiroyuki Suzuki | Manufacturing method of laminated body, manufacturing organic device and organic thin-film solar cell using same, and organic device and organic thin-film solar cell |
US20070054435A1 (en) | 2005-09-06 | 2007-03-08 | Seokhyun Yoon | Process for preparation of absorption layer of solar cell |
US20070153414A1 (en) | 2005-12-30 | 2007-07-05 | Michael Sullivan | External cover for controlling the temperature of an internal thermal zone of a hard disk drive |
Non-Patent Citations (2)
Title |
---|
Ramos, Rispens, Van Duren, Hummelen and Janssen, J. Am. Chem. Soc., vol. 123, pp. 6714-6715 (2001). |
Ton Offermans, Charge carrier dynamics in polymer solar cells, Dutch Plymer Institute projec #324, pp. 1 to 125 (Oct. 31, 2005). |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8669635B2 (en) * | 2008-10-20 | 2014-03-11 | 3M Innovative Properties Company | Electrically conductive nanocomposite material and thermoelectric device comprising the material |
US20100272985A1 (en) * | 2009-04-24 | 2010-10-28 | Mon-Shu Ho | Method of forming self-assembly and uniform fullerene array on surface of substrate |
US8986782B2 (en) * | 2009-04-24 | 2015-03-24 | Mon-Shu Ho | Method of forming self-assembly and uniform fullerene array on surface of substrate |
US9109278B2 (en) | 2009-04-24 | 2015-08-18 | Mon-Shu Ho | Method of forming self-assembly and uniform fullerene array on surface of substrate |
US9515244B2 (en) | 2009-12-15 | 2016-12-06 | Consorzio Delta Ti Research | Seebeck/Peltier thermoelectric conversion element with parallel nanowires of conductor or semiconductor material organized in rows and columns through an insulating body and process |
RU2461093C1 (en) * | 2011-02-18 | 2012-09-10 | Учреждение Российской Академии Наук Научно-Технологический Центр Микроэлектроники И Субмикронных Гетероструктур Ран | METHOD OF MAKING SEMICONDUCTOR STRUCTURE WITH p-n JUNCTIONS |
US9147845B2 (en) | 2013-04-26 | 2015-09-29 | Samsung Electronics Co., Ltd. | Single walled carbon nanotube-based planar photodector |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10367131B2 (en) | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10553773B2 (en) | 2013-12-06 | 2020-02-04 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US10141492B2 (en) | 2015-05-14 | 2018-11-27 | Nimbus Materials Inc. | Energy harvesting for wearable technology through a thin flexible thermoelectric device |
US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US9584061B1 (en) * | 2015-09-17 | 2017-02-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Electric drive systems including smoothing capacitor cooling devices and systems |
RU2622495C1 (en) * | 2016-03-25 | 2017-06-15 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Юго-Западный государственный университет" (ЮЗГУ) | Hiking heliothermelectric power station |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10516088B2 (en) | 2016-12-05 | 2019-12-24 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10559738B2 (en) | 2016-12-05 | 2020-02-11 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
RU2780579C1 (en) * | 2022-02-14 | 2022-09-27 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Юго-Западный государственный университет" (ЮЗГУ) | Solar thermal power plant |
Also Published As
Publication number | Publication date |
---|---|
US20080230110A1 (en) | 2008-09-25 |
US20070290287A1 (en) | 2007-12-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7800194B2 (en) | Thin film photodetector, method and system | |
Beek et al. | Efficient hybrid solar cells from zinc oxide nanoparticles and a conjugated polymer | |
JP4594832B2 (en) | Photocell and manufacturing method thereof | |
KR101131711B1 (en) | High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions | |
KR101342778B1 (en) | Photoelectric conversion element and manufacturing method thereof | |
Kumar et al. | Colloidal nanocrystal solar cells | |
US8907323B2 (en) | Microprocessor assembly | |
US10263186B2 (en) | Bulk heterojunction organic photovoltaic cells made by glancing angle deposition | |
WO2006025433A1 (en) | Photoelectric transduction material, photoelectric transduction apparatus and process for producing photoelectric transduction material | |
Lee et al. | Open-circuit voltage improvement in hybrid ZnO–polymer photovoltaic devices with oxide engineering | |
Ye et al. | High-Quality MAPbBr3 Cuboid Film with Promising Optoelectronic Properties Prepared by a Hot Methylamine Precursor Approach | |
Jia et al. | Controllable fabrication of ternary ZnIn 2 S 4 nanosheet array film for bulk heterojunction solar cells | |
KR101541205B1 (en) | Growth of ordered crystalline organic films | |
Wei et al. | A high-responsivity CsPbBr 3 nanowire photodetector induced by CdS@ Cd x Zn 1− x S gradient-alloyed quantum dots | |
WO2011052569A1 (en) | Organic photoelectric conversion element | |
Kaneko et al. | Fast response of organic photodetectors utilizing multilayered metal-phthalocyanine thin films | |
CN102576806A (en) | Method for production of organic photoelectric conversion element | |
Ftouhi et al. | Efficient planar heterojunction based on α-sexithiophene/fullerene through the use of MoO3/CuI anode buffer layer | |
KR101413842B1 (en) | organic solar cell devices comprising a layer of inorganic material having 2-dimensional structure | |
Hafeez et al. | Fabrication and Characterization of Organic Photovoltaic Cell using Keithley 2400 SMU for efficient solar cell | |
Badrabadi et al. | Organic photovoltaic cells based on self-assembly fabrication of vertically aligned CuPc nanorods upon fullerene particles | |
Kaul et al. | Quantum Multi-Body Interactions in Semiconducting WSe2 and C60-Graphene Hybrids for High-Performance Photodetectors | |
Sariciftci et al. | Role of buckminsterfullerene, C60, in organic polymeric photoelectric devices | |
Sadik et al. | Near IR Photoconductive Detector Based on f-MWCNTs/Polythiophen Nanocomposite | |
Švrček et al. | Electronic interactions of silicon nanocrystals and nanocarbon materials: Hybrid solar cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20140921 |