ZA935284B - Photovoltaic cell - Google Patents
Photovoltaic cellInfo
- Publication number
- ZA935284B ZA935284B ZA935284A ZA935284A ZA935284B ZA 935284 B ZA935284 B ZA 935284B ZA 935284 A ZA935284 A ZA 935284A ZA 935284 A ZA935284 A ZA 935284A ZA 935284 B ZA935284 B ZA 935284B
- Authority
- ZA
- South Africa
- Prior art keywords
- photovoltaic cell
- photovoltaic
- cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/351—Metal complexes comprising lanthanides or actinides, e.g. comprising europium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR929209507A FR2694451B1 (fr) | 1992-07-29 | 1992-07-29 | Cellule photovoltaïque. |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA935284B true ZA935284B (en) | 1994-04-21 |
Family
ID=9432499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA935284A ZA935284B (en) | 1992-07-29 | 1993-07-21 | Photovoltaic cell |
Country Status (11)
Country | Link |
---|---|
US (1) | US5482570A (ja) |
EP (1) | EP0606453B1 (ja) |
JP (1) | JP3391454B2 (ja) |
KR (1) | KR940702649A (ja) |
CN (1) | CN1032994C (ja) |
AU (1) | AU672421B2 (ja) |
DE (1) | DE69311289T2 (ja) |
ES (1) | ES2105299T3 (ja) |
FR (1) | FR2694451B1 (ja) |
WO (1) | WO1994003930A1 (ja) |
ZA (1) | ZA935284B (ja) |
Families Citing this family (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5663639A (en) * | 1994-01-18 | 1997-09-02 | Massachusetts Institute Of Technology | Apparatus and method for optical heterodyne conversion |
KR100237183B1 (ko) * | 1996-12-14 | 2000-01-15 | 정선종 | 금속-반도체 광소자 |
US6252156B1 (en) * | 1997-06-24 | 2001-06-26 | Fuji Xerox Co., Ltd. | Photosensitive semiconductor electrode, method of manufacturing photosensitive semiconductor electrode, and photoelectric converter using photosensitive semiconductor |
GB9806066D0 (en) | 1998-03-20 | 1998-05-20 | Cambridge Display Tech Ltd | Multilayer photovoltaic or photoconductive devices |
EP0954033A1 (de) * | 1998-04-29 | 1999-11-03 | Nunzio Dr. La Vecchia | Halbleiterbauelement, insbesondere eine Solarzelle, mit einer Schicht aus Pyrit, sowie Verfahren zu dessen Herstellung |
US6075203A (en) * | 1998-05-18 | 2000-06-13 | E. I. Du Pont Nemours And Company | Photovoltaic cells |
US6444189B1 (en) | 1998-05-18 | 2002-09-03 | E. I. Du Pont De Nemours And Company | Process for making and using titanium oxide particles |
DE19837365A1 (de) * | 1998-08-18 | 2000-03-02 | Forschungszentrum Juelich Gmbh | Solarzelle mit Clustern im aktiven Bereich |
AUPP699798A0 (en) * | 1998-11-06 | 1998-12-03 | Pacific Solar Pty Limited | Thin films with light trapping |
DE19905694A1 (de) * | 1998-11-27 | 2000-08-17 | Forschungszentrum Juelich Gmbh | Bauelement |
AUPP931799A0 (en) * | 1999-03-18 | 1999-04-15 | Sustainable Technologies Australia Limited | Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices |
US6649824B1 (en) * | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
US6136966A (en) * | 1999-09-23 | 2000-10-24 | National Research Institute For Metals | Phthalocyanine radical anions and process for producing the same |
JP2001114533A (ja) * | 1999-10-20 | 2001-04-24 | Nippon Sheet Glass Co Ltd | 透明導電膜付きガラス板およびこれを用いたガラス物品 |
US6799076B2 (en) * | 1999-12-07 | 2004-09-28 | Greatbatch-Hittman, Inc. | Coated electrode and method of making a coated electrode |
CN1181563C (zh) * | 1999-12-27 | 2004-12-22 | 精工爱普生株式会社 | 太阳电池以及太阳电池元件 |
JP3300812B2 (ja) * | 2000-01-19 | 2002-07-08 | 独立行政法人産業技術総合研究所 | 光電変換素子 |
JP4477729B2 (ja) * | 2000-01-19 | 2010-06-09 | シャープ株式会社 | 光電変換素子及びそれを用いた太陽電池 |
US20030192584A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Flexible photovoltaic cells and modules formed using foils |
US6949400B2 (en) * | 2002-01-25 | 2005-09-27 | Konarka Technologies, Inc. | Ultrasonic slitting of photovoltaic cells and modules |
US7414188B2 (en) * | 2002-01-25 | 2008-08-19 | Konarka Technologies, Inc. | Co-sensitizers for dye sensitized solar cells |
US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
US7205473B2 (en) * | 2002-01-25 | 2007-04-17 | Konarka Technologies, Inc. | Photovoltaic powered multimedia greeting cards and smart cards |
US20050284513A1 (en) * | 2002-08-08 | 2005-12-29 | Christoph Brabec | Chip card comprising an integrated energy converter |
US20030192585A1 (en) * | 2002-01-25 | 2003-10-16 | Konarka Technologies, Inc. | Photovoltaic cells incorporating rigid substrates |
US7186911B2 (en) | 2002-01-25 | 2007-03-06 | Konarka Technologies, Inc. | Methods of scoring for fabricating interconnected photovoltaic cells |
SE0103740D0 (sv) * | 2001-11-08 | 2001-11-08 | Forskarpatent I Vaest Ab | Photovoltaic element and production methods |
US6900382B2 (en) | 2002-01-25 | 2005-05-31 | Konarka Technologies, Inc. | Gel electrolytes for dye sensitized solar cells |
US6706963B2 (en) * | 2002-01-25 | 2004-03-16 | Konarka Technologies, Inc. | Photovoltaic cell interconnection |
US6913713B2 (en) | 2002-01-25 | 2005-07-05 | Konarka Technologies, Inc. | Photovoltaic fibers |
US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
EP1176646A1 (en) * | 2000-07-28 | 2002-01-30 | Ecole Polytechnique Féderale de Lausanne (EPFL) | Solid state heterojunction and solid state sensitized photovoltaic cell |
US7042029B2 (en) * | 2000-07-28 | 2006-05-09 | Ecole Polytechnique Federale De Lausanne (Epfl) | Solid state heterojunction and solid state sensitized photovoltaic cell |
EP1209708B1 (en) * | 2000-11-24 | 2007-01-17 | Sony Deutschland GmbH | Hybrid solar cells with thermal deposited semiconductive oxide layer |
US20060008580A1 (en) * | 2000-11-24 | 2006-01-12 | Gabrielle Nelles | Hybrid solar cells with thermal deposited semiconductive oxide layer |
US6774300B2 (en) * | 2001-04-27 | 2004-08-10 | Adrena, Inc. | Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure |
AUPR719801A0 (en) * | 2001-08-23 | 2001-09-13 | Pacific Solar Pty Limited | Glass beads coating process |
US7259324B2 (en) * | 2001-12-05 | 2007-08-21 | Konarka Technologies, Inc. | Photovoltaic solar cell |
US7989695B2 (en) * | 2001-12-18 | 2011-08-02 | Steven Allen Carlson | Organic photovoltaic cells |
WO2003065393A2 (en) * | 2002-01-25 | 2003-08-07 | Konarka Technologies, Inc. | Displays with integrated photovoltaic cells |
WO2003065394A2 (en) * | 2002-01-25 | 2003-08-07 | Konarka Technologies, Inc. | Photovoltaic cell components and materials |
CA2474491A1 (en) * | 2002-01-25 | 2003-08-07 | Bill Beckenbaugh | Structures and materials for dye sensitized solar cells |
US20070251570A1 (en) * | 2002-03-29 | 2007-11-01 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
JP4392741B2 (ja) * | 2002-04-17 | 2010-01-06 | 日揮触媒化成株式会社 | 光電気セル |
US7800194B2 (en) * | 2002-04-23 | 2010-09-21 | Freedman Philip D | Thin film photodetector, method and system |
US7485799B2 (en) * | 2002-05-07 | 2009-02-03 | John Michael Guerra | Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same |
US20080283121A1 (en) * | 2002-05-07 | 2008-11-20 | Nanoptek Corporation | Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same |
US7995871B2 (en) * | 2002-05-07 | 2011-08-09 | Nanoptek Corporation | Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same |
US8673399B2 (en) * | 2002-05-07 | 2014-03-18 | Nanoptek Corporation | Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same |
US7253017B1 (en) | 2002-06-22 | 2007-08-07 | Nanosolar, Inc. | Molding technique for fabrication of optoelectronic devices |
US7291782B2 (en) * | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
US7594982B1 (en) | 2002-06-22 | 2009-09-29 | Nanosolar, Inc. | Nanostructured transparent conducting electrode |
US6946597B2 (en) | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
US6852920B2 (en) * | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
EP1540741B1 (en) * | 2002-09-05 | 2014-10-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
WO2004025747A2 (de) * | 2002-09-05 | 2004-03-25 | Konarka Technologies, Inc. | Organisches photovoltaisches bauelement und herstellungsverfahren dazu |
US7179988B2 (en) * | 2002-12-11 | 2007-02-20 | General Electric Company | Dye sensitized solar cells having foil electrodes |
US7145071B2 (en) * | 2002-12-11 | 2006-12-05 | General Electric Company | Dye sensitized solar cell having finger electrodes |
JP5350587B2 (ja) * | 2003-03-24 | 2013-11-27 | メルク パテント ゲーエムベーハー | メッシュ電極を備える光電セル |
US7511217B1 (en) | 2003-04-19 | 2009-03-31 | Nanosolar, Inc. | Inter facial architecture for nanostructured optoelectronic devices |
US7645934B1 (en) * | 2003-04-29 | 2010-01-12 | Nanosolar, Inc. | Nanostructured layer and fabrication methods |
EP1473745A1 (en) * | 2003-04-30 | 2004-11-03 | Ecole Polytechnique Federale De Lausanne (Epfl) | Dye sensitized solar cell |
US7462774B2 (en) * | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
US6995371B2 (en) * | 2003-06-12 | 2006-02-07 | Sirica Corporation | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
US8742253B1 (en) * | 2003-06-14 | 2014-06-03 | InterPhases Solar | Device configurations for CIS based solar cells |
KR101056440B1 (ko) * | 2003-09-26 | 2011-08-11 | 삼성에스디아이 주식회사 | 염료감응 태양전지 |
KR100578798B1 (ko) * | 2003-12-12 | 2006-05-11 | 삼성에스디아이 주식회사 | 염료감응 태양전지 및 그 제조 방법 |
KR100589322B1 (ko) * | 2004-02-03 | 2006-06-14 | 삼성에스디아이 주식회사 | 고효율 염료감응 태양전지 및 그 제조 방법 |
US8304019B1 (en) | 2004-02-19 | 2012-11-06 | Nanosolar Inc. | Roll-to-roll atomic layer deposition method and system |
US7045205B1 (en) | 2004-02-19 | 2006-05-16 | Nanosolar, Inc. | Device based on coated nanoporous structure |
US7115304B2 (en) * | 2004-02-19 | 2006-10-03 | Nanosolar, Inc. | High throughput surface treatment on coiled flexible substrates |
US7419846B2 (en) * | 2004-04-13 | 2008-09-02 | The Trustees Of Princeton University | Method of fabricating an optoelectronic device having a bulk heterojunction |
AU2005234514B2 (en) * | 2004-04-13 | 2011-04-14 | The Trustees Of Princeton University | Method of fabricating an optoelectronic device having a bulk heterojunction |
DE102004030628A1 (de) * | 2004-06-24 | 2006-01-19 | Konarka Technologies, Inc., Lowell | Organisches elektronisches Element mit elektrisch leitfähiger semitransparenter Schicht |
DE102004043305A1 (de) * | 2004-09-08 | 2006-03-09 | Insko Tec E.K. | Selbstorganisierende Formulierungen und ihre Verwendung als Bausteine in funktionalen Bauteilen |
EP1805825B1 (en) * | 2004-09-24 | 2011-08-24 | Plextronics, Inc. | Heteroatomic regioregular poly(3-substituted thiophenes) in photovoltaic cells |
US20070240757A1 (en) * | 2004-10-15 | 2007-10-18 | The Trustees Of Boston College | Solar cells using arrays of optical rectennas |
US7772487B1 (en) | 2004-10-16 | 2010-08-10 | Nanosolar, Inc. | Photovoltaic cell with enhanced energy transfer |
DE102004054756A1 (de) * | 2004-11-12 | 2006-06-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | UV-stabilisierendes Halbleitermaterial, insbesondere für Solarzellen, sowie Verfahren zur Herstellung |
US7989694B2 (en) * | 2004-12-06 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion element, solar battery, and photo sensor |
US7372609B2 (en) * | 2005-03-16 | 2008-05-13 | Gentex Corporation | Nanocrystalline metal oxide films and associated devices comprising the same |
US20070224464A1 (en) * | 2005-03-21 | 2007-09-27 | Srini Balasubramanian | Dye-sensitized photovoltaic cells |
EP1889314A2 (en) * | 2005-06-06 | 2008-02-20 | High Power Lithium S.A. | Lithium rechargeable electrochemical cell |
EP1905099A4 (en) * | 2005-07-15 | 2017-07-19 | Merck Patent GmbH | Diffraction foils |
US7522329B2 (en) * | 2005-08-22 | 2009-04-21 | Konarka Technologies, Inc. | Displays with integrated photovoltaic cells |
WO2007086903A2 (en) * | 2005-08-24 | 2007-08-02 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanocoax structures |
JP2009506546A (ja) * | 2005-08-24 | 2009-02-12 | ザ トラスティーズ オブ ボストン カレッジ | ナノスケール共金属構造を用いた太陽エネルギー変換のための装置および方法 |
US20070079867A1 (en) * | 2005-10-12 | 2007-04-12 | Kethinni Chittibabu | Photovoltaic fibers |
US20070193621A1 (en) * | 2005-12-21 | 2007-08-23 | Konarka Technologies, Inc. | Photovoltaic cells |
KR101334050B1 (ko) * | 2006-02-14 | 2013-12-05 | 토요타 찌도샤 카부시끼카이샤 | 리튬 이차 전지용 리튬 망간 인산염 포지티브 재료 |
WO2007127482A2 (en) * | 2006-04-28 | 2007-11-08 | Sri International | Methods for producing consolidated and purified materials |
US7955889B1 (en) * | 2006-07-11 | 2011-06-07 | The Trustees Of Princeton University | Organic photosensitive cells grown on rough electrode with nano-scale morphology control |
EP2190056B1 (en) * | 2006-08-24 | 2014-10-01 | Toyo Seikan Kaisha, Ltd. | Dye-sensitized solar cell |
EP1901388A1 (en) * | 2006-09-14 | 2008-03-19 | High Power Lithium S.A. | Overcharge and overdischarge protection in lithium-ion batteries |
US8373060B2 (en) * | 2006-10-24 | 2013-02-12 | Zetta Research and Development LLC—AQT Series | Semiconductor grain microstructures for photovoltaic cells |
US8426722B2 (en) | 2006-10-24 | 2013-04-23 | Zetta Research and Development LLC—AQT Series | Semiconductor grain and oxide layer for photovoltaic cells |
US9112447B2 (en) * | 2006-11-03 | 2015-08-18 | Solera Laboratories, Inc. | Nano power cell and method of use |
US8319092B1 (en) | 2006-11-03 | 2012-11-27 | Solera Laboratories, Inc. | Nano power cell and method of use |
US8158880B1 (en) | 2007-01-17 | 2012-04-17 | Aqt Solar, Inc. | Thin-film photovoltaic structures including semiconductor grain and oxide layers |
JP2010517299A (ja) * | 2007-01-30 | 2010-05-20 | ソーラスタ インコーポレイテッド | 光電池およびその作製方法 |
KR20090120474A (ko) * | 2007-02-12 | 2009-11-24 | 솔라스타, 인코포레이티드 | 고온 캐리어 냉각이 감소된 광전지 셀 |
JP5649954B2 (ja) * | 2007-04-02 | 2015-01-07 | メルク パテント ゲーエムベーハー | 光起電力セルとして構成される物品 |
KR20100039371A (ko) * | 2007-07-03 | 2010-04-15 | 솔라스타, 인코포레이티드 | 분산된 동축 광기전 디바이스 |
GB0718011D0 (en) * | 2007-09-14 | 2007-10-24 | Molecular Vision Ltd | Photovoltaic device |
IL189254A0 (en) * | 2008-02-04 | 2008-08-07 | Garber Valery | Quantum uncooled infra-red photo-detector |
US8927852B2 (en) * | 2008-08-21 | 2015-01-06 | Seagate Technology Llc | Photovoltaic device with an up-converting quantum dot layer and absorber |
WO2010055505A1 (en) * | 2008-11-12 | 2010-05-20 | D.C. Sirica Ltd. | Production of amorphous and crystalline silicon |
KR101081194B1 (ko) * | 2009-06-16 | 2011-11-07 | 엘지이노텍 주식회사 | 태양전지의 제조장치, 이를 이용한 태양전지의 제조방법 |
US20120267240A1 (en) * | 2009-10-26 | 2012-10-25 | Agency For Science Technology And Research | Photoelectrode with a polymer layer |
TWI450403B (zh) * | 2009-12-07 | 2014-08-21 | Ind Tech Res Inst | 染料敏化太陽電池及其製造方法 |
WO2011075579A1 (en) * | 2009-12-18 | 2011-06-23 | First Solar, Inc. | Photovoltaic device including doped layer |
US8853528B2 (en) | 2010-03-25 | 2014-10-07 | Raytheon Company | Radio frequency transparent photovoltaic cell |
US9129751B2 (en) | 2010-03-29 | 2015-09-08 | Northern Illinois University | Highly efficient dye-sensitized solar cells using microtextured electron collecting anode and nanoporous and interdigitated hole collecting cathode and method for making same |
WO2012090971A1 (ja) * | 2010-12-27 | 2012-07-05 | 住友化学株式会社 | 光電変換素子及びそれに用いられる組成物 |
US9159939B2 (en) | 2011-07-21 | 2015-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
KR101885244B1 (ko) | 2011-11-07 | 2018-08-06 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
US20140332079A1 (en) | 2011-12-08 | 2014-11-13 | Ecole Polytechnique Federale De Lausanne (Epfl) | Semiconductor electrode comprising a blocking layer |
US20130327386A1 (en) * | 2012-06-11 | 2013-12-12 | Tao Xu | Three-dimensional photovoltaic device |
EP2693503A1 (en) | 2012-08-03 | 2014-02-05 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Organo metal halide perovskite heterojunction solar cell and fabrication thereof |
CN102856499B (zh) * | 2012-08-17 | 2015-10-21 | 许昌学院 | 一种SnO2与P3HT杂化异质结薄膜太阳能电池的制备方法 |
CN102888584B (zh) * | 2012-09-17 | 2014-05-14 | 上海大学 | 一种基于金刚石薄膜上沉积CdTe薄膜的方法 |
US9153729B2 (en) | 2012-11-26 | 2015-10-06 | International Business Machines Corporation | Atomic layer deposition for photovoltaic devices |
CN104854721A (zh) * | 2012-12-07 | 2015-08-19 | 松下知识产权经营株式会社 | 光电转换元件 |
US9412602B2 (en) | 2013-03-13 | 2016-08-09 | Asm Ip Holding B.V. | Deposition of smooth metal nitride films |
US8889909B2 (en) | 2013-03-15 | 2014-11-18 | Hunt Energy Enterprises, Llc | Tunable photoactive compounds |
US8889466B2 (en) * | 2013-04-12 | 2014-11-18 | International Business Machines Corporation | Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells |
JP2016517187A (ja) | 2013-05-06 | 2016-06-09 | グレートセル ソーラー エス.エー. | 有機−無機ペロブスカイト系太陽電池 |
EP2804232A1 (en) | 2013-05-16 | 2014-11-19 | Abengoa Research S.L. | High performance perovskite-sensitized mesoscopic solar cells |
BR112015028097A2 (pt) | 2013-05-06 | 2017-07-25 | Abengoa Res Sl | método para produzir uma célula solar, método para produzir uma camada de perovskita orgânica-inorgânica nanocristalina, célula solar, e, camada de perovskita |
JP2014236181A (ja) * | 2013-06-05 | 2014-12-15 | シャープ株式会社 | 光電変換素子 |
EP2822009A1 (en) | 2013-07-01 | 2015-01-07 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Solar cell and process for producing the same |
US9405164B2 (en) | 2013-08-21 | 2016-08-02 | Board Of Trustees Of Northern Illinois University | Electrochromic device having three-dimensional electrode |
US10643925B2 (en) | 2014-04-17 | 2020-05-05 | Asm Ip Holding B.V. | Fluorine-containing conductive films |
EP2966703A1 (en) | 2014-07-11 | 2016-01-13 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Template enhanced organic inorganic perovskite heterojunction photovoltaic device |
WO2016038501A2 (en) | 2014-09-10 | 2016-03-17 | Ecole Polytechnique Federale De Lausanne (Epfl) | Photodetector |
WO2016057429A1 (en) * | 2014-10-06 | 2016-04-14 | California Institute Of Technology | Photon and carrier management design for nonplanar thin-film copper indium gallium diselenide photovoltaics |
EP3065189A1 (en) | 2015-03-05 | 2016-09-07 | Solaronix Sa | Novel hole transport materials and optoelectronic devices containing the same |
CN105185861A (zh) * | 2015-08-05 | 2015-12-23 | 辽宁恒华航海电力设备工程有限公司 | 一种玻璃结构薄膜太阳能电池及制备方法 |
CN105047740B (zh) * | 2015-08-05 | 2017-10-13 | 沈阳工程学院 | 一种Si基柔性不锈钢结构太阳电池及制备方法 |
US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
US10982136B2 (en) | 2016-02-26 | 2021-04-20 | The Regents Of The University Of California | Ligand-sensitized lanthanide nanocrystals as ultraviolet downconverters |
EP3279960A1 (en) | 2016-08-02 | 2018-02-07 | Aalto University Foundation | Method for inkjet printing an organic-inorganic perovskite |
US20180061617A1 (en) * | 2016-08-23 | 2018-03-01 | Applied Materials, Inc. | Method to deposit aluminum oxy-fluoride layer for fast recovery of etch amount in etch chamber |
US11235076B2 (en) | 2016-08-29 | 2022-02-01 | Fred Hutchinson Cancer Research Center | Chelating platform for delivery of radionuclides |
DK3509595T3 (da) | 2016-09-06 | 2023-01-23 | Univ California | Formuleringer af hydroxypyridonat-actinid/lanthanid-dekorporeringsmidler |
EP3520117B1 (en) | 2016-09-29 | 2023-11-08 | The Regents of The University of California | Separation of metal ions by liquid-liquid extraction |
US11251316B2 (en) | 2017-06-05 | 2022-02-15 | University Of South Carolina | Photovoltaic cell energy harvesting for fluorescent lights |
EP3489240A1 (en) | 2017-11-28 | 2019-05-29 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | In-situ cross-linkable hole transporting triazatruxene monomers for optoelectronic devicestr |
WO2019138154A1 (en) | 2018-01-09 | 2019-07-18 | Aalto-Korkeakoulusäätiö Sr | Method for refurbishing of carbon based perovskite solar cells (cpscs) and modules via recycling of active materials |
CN109705343B (zh) * | 2018-12-12 | 2020-11-06 | 上海交通大学 | 薁基共价三嗪骨架及其应用 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4554727A (en) * | 1982-08-04 | 1985-11-26 | Exxon Research & Engineering Company | Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces |
CA1209681A (en) * | 1982-08-04 | 1986-08-12 | Exxon Research And Engineering Company | Optically enhanced thin film photovoltaic device using lithography defined random surfaces |
US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
JPS60195979A (ja) * | 1984-03-17 | 1985-10-04 | Semiconductor Energy Lab Co Ltd | 薄膜太陽電池 |
US4732621A (en) * | 1985-06-17 | 1988-03-22 | Sanyo Electric Co., Ltd. | Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer |
JPH0663829B2 (ja) * | 1985-10-16 | 1994-08-22 | 三洋電機株式会社 | 色センサ |
JPS62198169A (ja) * | 1986-02-25 | 1987-09-01 | Fuji Electric Corp Res & Dev Ltd | 太陽電池 |
JPS62247574A (ja) * | 1986-04-18 | 1987-10-28 | Sanyo Electric Co Ltd | 光起電力装置 |
-
1992
- 1992-07-29 FR FR929209507A patent/FR2694451B1/fr not_active Expired - Fee Related
-
1993
- 1993-07-21 ZA ZA935284A patent/ZA935284B/xx unknown
- 1993-07-24 US US08/204,395 patent/US5482570A/en not_active Expired - Lifetime
- 1993-07-24 EP EP93917648A patent/EP0606453B1/fr not_active Expired - Lifetime
- 1993-07-24 DE DE69311289T patent/DE69311289T2/de not_active Expired - Lifetime
- 1993-07-24 AU AU47025/93A patent/AU672421B2/en not_active Ceased
- 1993-07-24 WO PCT/EP1993/001980 patent/WO1994003930A1/fr active IP Right Grant
- 1993-07-24 ES ES93917648T patent/ES2105299T3/es not_active Expired - Lifetime
- 1993-07-24 JP JP50495994A patent/JP3391454B2/ja not_active Expired - Lifetime
- 1993-07-24 KR KR1019940700851A patent/KR940702649A/ko not_active Application Discontinuation
- 1993-07-28 CN CN93116580A patent/CN1032994C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0606453A1 (fr) | 1994-07-20 |
FR2694451A1 (fr) | 1994-02-04 |
AU672421B2 (en) | 1996-10-03 |
DE69311289T2 (de) | 1998-01-15 |
AU4702593A (en) | 1994-03-03 |
JP3391454B2 (ja) | 2003-03-31 |
KR940702649A (ko) | 1994-08-20 |
DE69311289D1 (de) | 1997-07-10 |
JPH06511603A (ja) | 1994-12-22 |
WO1994003930A1 (fr) | 1994-02-17 |
US5482570A (en) | 1996-01-09 |
FR2694451B1 (fr) | 1994-09-30 |
CN1032994C (zh) | 1996-10-09 |
CN1086049A (zh) | 1994-04-27 |
ES2105299T3 (es) | 1997-10-16 |
EP0606453B1 (fr) | 1997-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ZA935284B (en) | Photovoltaic cell | |
EP0534416A3 (en) | Solar cell | |
GB2270195B (en) | Electrochemical cell | |
EP0534473A3 (en) | Solar cell | |
EP0537730A3 (en) | Solar cell | |
GB9206732D0 (en) | Photovoltaic cells | |
AU1185392A (en) | Solar cell | |
GB2270794B (en) | Electrochemical cell | |
GB9211993D0 (en) | Fuel cells | |
AU5715394A (en) | Solar cell arrangement | |
IL102374A0 (en) | Nanocrystalline cell | |
GB9216393D0 (en) | Electrochemical cell | |
GB9510709D0 (en) | Solar combination cell | |
AU5697394A (en) | Photovoltaic cells | |
GB2214711B (en) | Photovoltaic cell | |
PL296803A1 (en) | Photovoltaic cell | |
GB2269265B (en) | Electrochemical cell | |
ZA941205B (en) | Advanced solar cell | |
GB2271667B (en) | Battery cell | |
GB9201955D0 (en) | Cell structure | |
GB9213256D0 (en) | Cell | |
ZA934224B (en) | Solar cooker-sterilizer | |
GB9207276D0 (en) | Modified cells | |
GB9225776D0 (en) | Cell line | |
HU9300933D0 (en) | Solar collector |