JPWO2014087586A1 - 光電変換素子 - Google Patents
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H10K30/80—Constructional details
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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Abstract
Description
図1は、本発明の実施の形態1による光電変換素子31の模式断面図である。光電変換素子(以下、素子)31は、導電性の第1電極層3と、光電変換層(以下、変換層)4と、第2電極層7とを有する。第1電極層3は、導電性を有する第1基材1と、第1基材1上に形成された粗膜層2とを含む。変換層4は粗膜層2上に、第1基材1の表面全体を覆うように形成されている。第2電極層7は変換層4上に形成されている。素子31は光を電気エネルギーに変換することができる。
(1)第1基材1を蒸着槽内に配置して0.01〜0.001Paの真空状態に保つ。
(2)第1基材1の周辺に、酸素ガスに対してアルゴンガスの流量を2〜6倍にした不活性ガスを流入して、第1基材1の周辺の圧力を10〜30Paの状態にする。
(3)第1基材1の温度を150〜300℃の範囲に保つ。
(4)蒸着源にアルミニウムを配設した状態で真空蒸着により粗膜層2を形成する。
Pは水銀を空孔内に充填するために加える圧力、Dは空孔径(直径)、γは水銀の表面張力(480dyne・cm−1)、θは水銀と細孔壁面の接触角である。空孔径の最頻値は、空孔径Dの分布のピーク値である。
図3は、本発明の実施の形態2による光電変換素子(以下、素子)33の模式断面図である。素子33は、図1に示す実施の形態1の構造に対し、変換層4と導電層5との界面に正孔輸送層(以下、輸送層)8を有している。すなわち、素子33は、変換層4と導電層5との間に輸送層8を有している。これ以外の構成は実施の形態1と同様である。
図4は、本発明の実施の形態3による光電変換素子(以下、素子)34の模式断面図である。素子34は、図1に示す実施の形態1の構造において、変換層4に代えて光電変換層(以下、変換層)24を有する。第1電極層3と第2電極層7との間に電界を印加すると、第2電極層7より変換層24内に移動した電荷(正孔)と、導電層5から変換層24内に注入された電子が結合し発光する。このように素子34は電気エネルギーを光に変換することができる。それ以外の構成は実施の形態1と同様である。
2 粗膜層
2a 金属微粒子
2b 連結体
3,13 第1電極層
4,14,24 光電変換層(変換層)
5 導電層
6 第2基材
7,17 第2電極層
8 正孔輸送層(輸送層)
11 基材
20 外装部材
31,32,33,34 光電変換素子(素子)
非特許文献2:Appl.Phys.Lett.96,043307 (2010)
Claims (8)
- 第1基材と、前記第1基材上に形成された粗膜層とを有する第1電極層と、
前記粗膜層上に形成された光電変換層と、
前記光電変換層上に形成された第2電極層と、を備え、
前記粗膜層は、前記第1基材の表面に不規則に連ねられた複数個の金属微粒子で構成され、前記光電変換層は前記複数個の金属微粒子で形成された複数の連結体の間に入り込んでいる、
光電変換素子。 - 前記連結体が、複数の枝に枝分かれした構造を有する、
請求項1記載の光電変換素子。 - 前記第1基材単独の状態において、前記粗膜層の空孔径の最頻値は、5nm以上、1μm以下である、
請求項1記載の光電変換素子。 - 前記金属微粒子の直径の最頻値は、5nm以上、300nm以下である、
請求項1記載の光電変換素子。 - 前記第2電極層が、透明電極、金属メッシュ配線電極、金属ナノワイヤー電極のいずれかである、
請求項1記載の光電変換素子。 - 前記粗膜層と前記光電変換層とが圧接されている、
請求項1記載の光電変換素子。 - 前記第1電極層と前記光電変換層と前記第2電極層とを含む積層体を減圧状態で密封した絶縁性の外装部材をさらに備え、
前記外装部材によって前記粗膜層と前記光電変換層とが圧接されている、
請求項6に記載の光電変換素子。 - 前記光電変換層と前記第2電極層との間に形成された正孔輸送層をさらに備えた、
請求項1記載の光電変換素子。
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JP2012267931 | 2012-12-07 | ||
JP2012267932 | 2012-12-07 | ||
JP2012267932 | 2012-12-07 | ||
JP2012267931 | 2012-12-07 | ||
PCT/JP2013/006754 WO2014087586A1 (ja) | 2012-12-07 | 2013-11-18 | 光電変換素子 |
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JP2010251592A (ja) * | 2009-04-17 | 2010-11-04 | Konica Minolta Holdings Inc | 有機光電変換素子及びその製造方法 |
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JPS59198781A (ja) | 1983-04-25 | 1984-11-10 | Agency Of Ind Science & Technol | 光電変換素子 |
US7022910B2 (en) * | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
JP2005310388A (ja) | 2004-04-16 | 2005-11-04 | Ebara Corp | 光電変換素子 |
US20050247340A1 (en) * | 2004-04-19 | 2005-11-10 | Zeira Eitan C | All printed solar cell array |
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KR20130117144A (ko) * | 2012-04-17 | 2013-10-25 | 삼성전자주식회사 | 인버티드 유기 태양전지 및 그 제조방법 |
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US9853174B2 (en) | 2017-12-26 |
CN104854721A (zh) | 2015-08-19 |
JP6371977B2 (ja) | 2018-08-15 |
US20150318417A1 (en) | 2015-11-05 |
WO2014087586A1 (ja) | 2014-06-12 |
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