DE3882557T2 - DRAM-Zelle und Herstellungsverfahren. - Google Patents
DRAM-Zelle und Herstellungsverfahren.Info
- Publication number
- DE3882557T2 DE3882557T2 DE88101540T DE3882557T DE3882557T2 DE 3882557 T2 DE3882557 T2 DE 3882557T2 DE 88101540 T DE88101540 T DE 88101540T DE 3882557 T DE3882557 T DE 3882557T DE 3882557 T2 DE3882557 T2 DE 3882557T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- dram cell
- dram
- cell
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/026,356 US4830978A (en) | 1987-03-16 | 1987-03-16 | Dram cell and method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3882557D1 DE3882557D1 (de) | 1993-09-02 |
DE3882557T2 true DE3882557T2 (de) | 1993-12-23 |
Family
ID=21831344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88101540T Expired - Fee Related DE3882557T2 (de) | 1987-03-16 | 1988-02-03 | DRAM-Zelle und Herstellungsverfahren. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4830978A (de) |
EP (1) | EP0282716B1 (de) |
JP (1) | JP2643255B2 (de) |
KR (1) | KR890013774A (de) |
CN (1) | CN1011369B (de) |
DE (1) | DE3882557T2 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200353A (en) * | 1987-06-29 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having trench capacitor |
JPH01125858A (ja) * | 1987-11-10 | 1989-05-18 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US4942554A (en) * | 1987-11-26 | 1990-07-17 | Siemens Aktiengesellschaft | Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same |
US5014099A (en) * | 1988-05-26 | 1991-05-07 | Texas Instruments Incorporated | Dynamic RAM cell with trench capacitor and trench transistor |
US5103276A (en) * | 1988-06-01 | 1992-04-07 | Texas Instruments Incorporated | High performance composed pillar dram cell |
US5106776A (en) * | 1988-06-01 | 1992-04-21 | Texas Instruments Incorporated | Method of making high performance composed pillar dRAM cell |
US5104481A (en) * | 1988-09-28 | 1992-04-14 | Lasa Industries, Inc. | Method for fabricating laser generated I.C. masks |
US5346834A (en) * | 1988-11-21 | 1994-09-13 | Hitachi, Ltd. | Method for manufacturing a semiconductor device and a semiconductor memory device |
US5049518A (en) * | 1988-12-20 | 1991-09-17 | Matsushita Electric Industrial Co., Ltd. | Method of making a trench dram cell |
US5028980A (en) * | 1988-12-21 | 1991-07-02 | Texas Instruments Incorporated | Trench capacitor with expanded area |
US4958212A (en) * | 1988-12-30 | 1990-09-18 | Texas Instruments Incorporated | Trench memory cell |
JPH02206175A (ja) * | 1989-02-06 | 1990-08-15 | Fuji Electric Co Ltd | Mos型半導体装置 |
WO1990011619A1 (en) * | 1989-03-23 | 1990-10-04 | Grumman Aerospace Corporation | Single trench mosfet-capacitor cell for analog signal processing |
US5053350A (en) * | 1989-03-23 | 1991-10-01 | Grumman Aerospace Corporation | Method of making trench MOSFET capacitor cell for analog signal processing |
US4978634A (en) * | 1989-07-25 | 1990-12-18 | Texas Instruments, Incorporated | Method of making trench DRAM cell with stacked capacitor and buried lateral contact |
US4942137A (en) * | 1989-08-14 | 1990-07-17 | Motorola, Inc. | Self-aligned trench with selective trench fill |
US5064777A (en) * | 1990-06-28 | 1991-11-12 | International Business Machines Corporation | Fabrication method for a double trench memory cell device |
US4988637A (en) * | 1990-06-29 | 1991-01-29 | International Business Machines Corp. | Method for fabricating a mesa transistor-trench capacitor memory cell structure |
US5096849A (en) * | 1991-04-29 | 1992-03-17 | International Business Machines Corporation | Process for positioning a mask within a concave semiconductor structure |
US5198383A (en) * | 1991-06-25 | 1993-03-30 | Texas Instruments Incorporated | Method of fabricating a composed pillar transistor DRAM Cell |
US5156992A (en) * | 1991-06-25 | 1992-10-20 | Texas Instruments Incorporated | Process for forming poly-sheet pillar transistor DRAM cell |
US5214603A (en) * | 1991-08-05 | 1993-05-25 | International Business Machines Corporation | Folded bitline, ultra-high density dynamic random access memory having access transistors stacked above trench storage capacitors |
WO1993017452A1 (en) * | 1992-02-28 | 1993-09-02 | Lasa Industries, Inc. | Laser generated i.c. mask |
US5365097A (en) * | 1992-10-05 | 1994-11-15 | International Business Machines Corporation | Vertical epitaxial SOI transistor, memory cell and fabrication methods |
US5641694A (en) * | 1994-12-22 | 1997-06-24 | International Business Machines Corporation | Method of fabricating vertical epitaxial SOI transistor |
US5529944A (en) * | 1995-02-02 | 1996-06-25 | International Business Machines Corporation | Method of making cross point four square folded bitline trench DRAM cell |
KR100209212B1 (ko) | 1996-10-22 | 1999-07-15 | 김영환 | 반도체메모리장치및그제조방법 |
US5858866A (en) * | 1996-11-22 | 1999-01-12 | International Business Machines Corportation | Geometrical control of device corner threshold |
EP0905783B1 (de) * | 1997-09-30 | 2006-06-14 | Infineon Technologies AG | Vertikaler Transistor implementiert in einer Speicherzelle mit Grabenkondensator |
US6236079B1 (en) | 1997-12-02 | 2001-05-22 | Kabushiki Kaisha Toshiba | Dynamic semiconductor memory device having a trench capacitor |
TW409408B (en) * | 1998-03-31 | 2000-10-21 | Siemens Ag | Method and apparatus having improved control of a buried strap in trench capacitors |
JP3214449B2 (ja) * | 1998-06-12 | 2001-10-02 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US6828191B1 (en) * | 1998-06-15 | 2004-12-07 | Siemens Aktiengesellschaft | Trench capacitor with an insulation collar and method for producing a trench capacitor |
DE19845058A1 (de) * | 1998-09-30 | 2000-04-13 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
JP3205306B2 (ja) * | 1998-12-08 | 2001-09-04 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US6331459B1 (en) * | 1999-02-18 | 2001-12-18 | Infineon Technologies Ag | Use of dummy poly spacers and divot fill techniques for DT-aligned processing after STI formation for advanced deep trench capacitor DRAM |
US6204140B1 (en) * | 1999-03-24 | 2001-03-20 | Infineon Technologies North America Corp. | Dynamic random access memory |
DE19930748C2 (de) * | 1999-07-02 | 2001-05-17 | Infineon Technologies Ag | Verfahren zur Herstellung von EEPROM- und DRAM-Grabenspeicherzellbereichen auf einem Chip |
US6426252B1 (en) * | 1999-10-25 | 2002-07-30 | International Business Machines Corporation | Silicon-on-insulator vertical array DRAM cell with self-aligned buried strap |
US6288422B1 (en) * | 2000-03-31 | 2001-09-11 | International Business Machines Corporation | Structure and process for fabricating a 6F2 DRAM cell having vertical MOSFET and large trench capacitance |
US6281539B1 (en) * | 2000-03-31 | 2001-08-28 | International Business Machines Corporation | Structure and process for 6F2 DT cell having vertical MOSFET and large storage capacitance |
US6339241B1 (en) | 2000-06-23 | 2002-01-15 | International Business Machines Corporation | Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch |
US6573137B1 (en) | 2000-06-23 | 2003-06-03 | International Business Machines Corporation | Single sided buried strap |
JP2003031686A (ja) * | 2001-07-16 | 2003-01-31 | Sony Corp | 半導体記憶装置およびその製造方法 |
EP1296369A1 (de) * | 2001-09-20 | 2003-03-26 | Infineon Technologies AG | Verfahren zur Herstellung von Gateoxyd für Trench Gate DRAM Zellen |
KR100454072B1 (ko) * | 2001-12-24 | 2004-10-26 | 동부전자 주식회사 | 반도체소자 및 그 제조방법 |
DE10208249B4 (de) * | 2002-02-26 | 2006-09-14 | Infineon Technologies Ag | Halbleiterspeicher mit vertikalem Auswahltransistor |
US6894336B2 (en) * | 2002-06-12 | 2005-05-17 | Infineon Technologies Ag | Vertical access transistor with curved channel |
CN1324671C (zh) * | 2002-09-06 | 2007-07-04 | 旺宏电子股份有限公司 | 波浪状电容器及其制造方法 |
DE10321742A1 (de) | 2003-05-14 | 2004-12-09 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Isoliergraben und Feldeffekttransistor sowie Herstellungsverfahren |
WO2007027169A2 (en) * | 2005-08-30 | 2007-03-08 | University Of South Florida | Method of manufacturing silicon topological capacitors |
US7232719B2 (en) * | 2005-03-28 | 2007-06-19 | Promos Technologies Inc. | Memories having a charge storage node at least partially located in a trench in a semiconductor substrate and electrically coupled to a source/drain region formed in the substrate |
US7262095B1 (en) * | 2005-06-07 | 2007-08-28 | Spansion Llc | System and method for reducing process-induced charging |
US7435681B2 (en) * | 2006-05-09 | 2008-10-14 | Macronix International Co., Ltd. | Methods of etching stacks having metal layers and hard mask layers |
TWI405246B (zh) * | 2009-12-29 | 2013-08-11 | Taiwan Memory Corp | 半導體溝槽製程 |
CN102130063B (zh) * | 2010-01-13 | 2014-03-12 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
US9129945B2 (en) * | 2010-03-24 | 2015-09-08 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
CN113517288B (zh) * | 2020-04-10 | 2024-03-29 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2706155A1 (de) * | 1977-02-14 | 1978-08-17 | Siemens Ag | In integrierter technik hergestellter elektronischer speicher |
DE2737073C3 (de) * | 1977-08-17 | 1981-09-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
US4546367A (en) * | 1982-06-21 | 1985-10-08 | Eaton Corporation | Lateral bidirectional notch FET with extended gate insulator |
JPS59181045A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体装置 |
US4683486A (en) * | 1984-09-24 | 1987-07-28 | Texas Instruments Incorporated | dRAM cell and array |
US4651184A (en) * | 1984-08-31 | 1987-03-17 | Texas Instruments Incorporated | Dram cell and array |
EP0180026B1 (de) * | 1984-10-31 | 1992-01-08 | Texas Instruments Incorporated | DRAM-Zelle und Verfahren |
CN1004734B (zh) * | 1984-12-07 | 1989-07-05 | 得克萨斯仪器公司 | 动态随机存取存贮器单元(dram)和生产方法 |
JPS61150366A (ja) * | 1984-12-25 | 1986-07-09 | Nec Corp | Mis型メモリ−セル |
US4673962A (en) * | 1985-03-21 | 1987-06-16 | Texas Instruments Incorporated | Vertical DRAM cell and method |
JPH0682800B2 (ja) * | 1985-04-16 | 1994-10-19 | 株式会社東芝 | 半導体記憶装置 |
US4704368A (en) * | 1985-10-30 | 1987-11-03 | International Business Machines Corporation | Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor |
-
1987
- 1987-03-16 US US07/026,356 patent/US4830978A/en not_active Expired - Lifetime
-
1988
- 1988-02-03 DE DE88101540T patent/DE3882557T2/de not_active Expired - Fee Related
- 1988-02-03 EP EP88101540A patent/EP0282716B1/de not_active Expired - Lifetime
- 1988-02-12 KR KR1019880001361A patent/KR890013774A/ko not_active Application Discontinuation
- 1988-03-01 CN CN88101174A patent/CN1011369B/zh not_active Expired
- 1988-03-15 JP JP63061750A patent/JP2643255B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0282716A1 (de) | 1988-09-21 |
JPS63308370A (ja) | 1988-12-15 |
CN88101174A (zh) | 1988-12-07 |
JP2643255B2 (ja) | 1997-08-20 |
KR890013774A (ko) | 1989-09-26 |
DE3882557D1 (de) | 1993-09-02 |
CN1011369B (zh) | 1991-01-23 |
EP0282716B1 (de) | 1993-07-28 |
US4830978A (en) | 1989-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |