DE3882305T2 - Aktive dynamische Speicherzelle. - Google Patents

Aktive dynamische Speicherzelle.

Info

Publication number
DE3882305T2
DE3882305T2 DE88307778T DE3882305T DE3882305T2 DE 3882305 T2 DE3882305 T2 DE 3882305T2 DE 88307778 T DE88307778 T DE 88307778T DE 3882305 T DE3882305 T DE 3882305T DE 3882305 T2 DE3882305 T2 DE 3882305T2
Authority
DE
Germany
Prior art keywords
memory cell
dynamic memory
active dynamic
active
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88307778T
Other languages
English (en)
Other versions
DE3882305D1 (de
Inventor
Loren Thomas Lancaster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE3882305D1 publication Critical patent/DE3882305D1/de
Application granted granted Critical
Publication of DE3882305T2 publication Critical patent/DE3882305T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE88307778T 1987-08-31 1988-08-23 Aktive dynamische Speicherzelle. Expired - Fee Related DE3882305T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9100587A 1987-08-31 1987-08-31

Publications (2)

Publication Number Publication Date
DE3882305D1 DE3882305D1 (de) 1993-08-19
DE3882305T2 true DE3882305T2 (de) 1993-10-21

Family

ID=22225313

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88307778T Expired - Fee Related DE3882305T2 (de) 1987-08-31 1988-08-23 Aktive dynamische Speicherzelle.

Country Status (6)

Country Link
EP (1) EP0306198B1 (de)
JP (1) JPS6472554A (de)
KR (1) KR910009452B1 (de)
CA (1) CA1322250C (de)
DE (1) DE3882305T2 (de)
ES (1) ES2041803T3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308783A (en) * 1992-12-16 1994-05-03 Siemens Aktiengesellschaft Process for the manufacture of a high density cell array of gain memory cells
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
IT201800004982A1 (it) * 2018-05-02 2019-11-02 Francesco Vilardo DRAM memory one bit all in one united in a single device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070653A (en) * 1976-06-29 1978-01-24 Texas Instruments Incorporated Random access memory cell with ion implanted resistor element
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
US4168536A (en) * 1977-06-30 1979-09-18 International Business Machines Corporation Capacitor memory with an amplified cell signal

Also Published As

Publication number Publication date
ES2041803T3 (es) 1993-12-01
JPS6472554A (en) 1989-03-17
EP0306198A2 (de) 1989-03-08
KR890004435A (ko) 1989-04-22
EP0306198A3 (en) 1990-10-17
KR910009452B1 (ko) 1991-11-16
EP0306198B1 (de) 1993-07-14
DE3882305D1 (de) 1993-08-19
CA1322250C (en) 1993-09-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee