ES2041803T3 - Celula de memoria dinamica activa. - Google Patents

Celula de memoria dinamica activa.

Info

Publication number
ES2041803T3
ES2041803T3 ES198888307778T ES88307778T ES2041803T3 ES 2041803 T3 ES2041803 T3 ES 2041803T3 ES 198888307778 T ES198888307778 T ES 198888307778T ES 88307778 T ES88307778 T ES 88307778T ES 2041803 T3 ES2041803 T3 ES 2041803T3
Authority
ES
Spain
Prior art keywords
storage
transistor
resistor
memory cell
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198888307778T
Other languages
English (en)
Inventor
Loren Thomas Lancaster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of ES2041803T3 publication Critical patent/ES2041803T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)

Abstract

LA CELULA DE MEMORIA DINAMICA COMPRENDE UN TRANSISTOR DE ALMACENAMIENTO Y UN TRANSISTOR DE ACCESO. LA PUERTA DEL TRANSISITOR DE ALMACENAMIENTO SE UTILIZA COMO UN ELECTRODO CAPACITADOR DE ALMACENAMIENTO , Y SE CONECTA A UNA FUENTE RESISTOR DE RESISTENCIA. EL COLECTOR DEL TRANSISTOR DE ALMACENAMIENTO SE CONECTA A UNA FUENTE DE POTENCIAL ELECTRICO (E.G.,VCC). EL TRANSISTOR DE ACCESO CONECTA LA FUENTE DEL TRANSISTOR DE ALMACENAMIENTO A UNA LINEA BIT. ESTA DISPOSICION MULTIPLICA LA CAPACIDAD EFECTIVA DE LA PUERTA DEL CAPACITADOR DE ALMACENAMIENTO, REDUCIENDO EL AREA REQUERIDA Y HACIENDO LA ESTRUCTURA MAS COMPACTA QUE UN INACTIVO TIPICO (UN TRANSISTOR) CELULA DRAM. COMO INNOVACION PRFERIDA, EL RESISTOR ESTA FORMADO PARA APLAZAR AL TRANSISTOR DE ALMACENAMIENTO, Y EL COLECTOR DEL TRANSISTOR DE ALMACENAMIENTO SE CONECTA A VCC POR MEDIO DE LA PARED LATERAL DE UNA ZANJA FORMADA EN EL SUBSTRATO DEL SEMICONDUCTOR.
ES198888307778T 1987-08-31 1988-08-23 Celula de memoria dinamica activa. Expired - Lifetime ES2041803T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9100587A 1987-08-31 1987-08-31

Publications (1)

Publication Number Publication Date
ES2041803T3 true ES2041803T3 (es) 1993-12-01

Family

ID=22225313

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198888307778T Expired - Lifetime ES2041803T3 (es) 1987-08-31 1988-08-23 Celula de memoria dinamica activa.

Country Status (6)

Country Link
EP (1) EP0306198B1 (es)
JP (1) JPS6472554A (es)
KR (1) KR910009452B1 (es)
CA (1) CA1322250C (es)
DE (1) DE3882305T2 (es)
ES (1) ES2041803T3 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5308783A (en) * 1992-12-16 1994-05-03 Siemens Aktiengesellschaft Process for the manufacture of a high density cell array of gain memory cells
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
IT201800004982A1 (it) * 2018-05-02 2019-11-02 Francesco Vilardo DRAM memory one bit all in one united in a single device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070653A (en) * 1976-06-29 1978-01-24 Texas Instruments Incorporated Random access memory cell with ion implanted resistor element
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
US4168536A (en) * 1977-06-30 1979-09-18 International Business Machines Corporation Capacitor memory with an amplified cell signal

Also Published As

Publication number Publication date
EP0306198B1 (en) 1993-07-14
EP0306198A2 (en) 1989-03-08
EP0306198A3 (en) 1990-10-17
KR890004435A (ko) 1989-04-22
DE3882305T2 (de) 1993-10-21
JPS6472554A (en) 1989-03-17
DE3882305D1 (de) 1993-08-19
KR910009452B1 (ko) 1991-11-16
CA1322250C (en) 1993-09-14

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