DE68914084T2 - Halbleiterspeicheranordnung mit ferroelektrische Kondensatoren enthaltenden Zellen. - Google Patents

Halbleiterspeicheranordnung mit ferroelektrische Kondensatoren enthaltenden Zellen.

Info

Publication number
DE68914084T2
DE68914084T2 DE68914084T DE68914084T DE68914084T2 DE 68914084 T2 DE68914084 T2 DE 68914084T2 DE 68914084 T DE68914084 T DE 68914084T DE 68914084 T DE68914084 T DE 68914084T DE 68914084 T2 DE68914084 T2 DE 68914084T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
cells containing
ferroelectric capacitors
memory arrangement
containing ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68914084T
Other languages
English (en)
Other versions
DE68914084D1 (de
Inventor
Haruki Intellectual Prope Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68914084D1 publication Critical patent/DE68914084D1/de
Application granted granted Critical
Publication of DE68914084T2 publication Critical patent/DE68914084T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE68914084T 1988-10-19 1989-10-04 Halbleiterspeicheranordnung mit ferroelektrische Kondensatoren enthaltenden Zellen. Expired - Fee Related DE68914084T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63263159A JPH088339B2 (ja) 1988-10-19 1988-10-19 半導体メモリ

Publications (2)

Publication Number Publication Date
DE68914084D1 DE68914084D1 (de) 1994-04-28
DE68914084T2 true DE68914084T2 (de) 1994-08-04

Family

ID=17385608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68914084T Expired - Fee Related DE68914084T2 (de) 1988-10-19 1989-10-04 Halbleiterspeicheranordnung mit ferroelektrische Kondensatoren enthaltenden Zellen.

Country Status (5)

Country Link
US (1) US5029128A (de)
EP (1) EP0364813B1 (de)
JP (1) JPH088339B2 (de)
KR (1) KR930000762B1 (de)
DE (1) DE68914084T2 (de)

Families Citing this family (51)

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JP2825135B2 (ja) * 1990-03-06 1998-11-18 富士通株式会社 半導体記憶装置及びその情報書込読出消去方法
USRE40552E1 (en) 1990-04-06 2008-10-28 Mosaid Technologies, Inc. Dynamic random access memory using imperfect isolating transistors
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
JPH0582801A (ja) * 1991-09-20 1993-04-02 Rohm Co Ltd 半導体集積回路のキヤパシタおよびこれを用いた不揮発性メモリ
WO1993008872A1 (en) * 1991-10-31 1993-05-13 Medtronic, Inc. Implantable medical device with flexible hardware platform
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
US5372859A (en) * 1992-10-20 1994-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
KR970000870B1 (ko) * 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 반도체메모리장치
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory
US5424975A (en) * 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
JP2953316B2 (ja) * 1994-08-12 1999-09-27 日本電気株式会社 不揮発性強誘電体メモリ
TW378323B (en) * 1994-09-22 2000-01-01 Matsushita Electric Ind Co Ltd Ferroelectric memory device
JP3183076B2 (ja) * 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
JP3127751B2 (ja) * 1995-01-04 2001-01-29 日本電気株式会社 強誘電体メモリ装置およびその動作制御方法
JPH08203266A (ja) * 1995-01-27 1996-08-09 Nec Corp 強誘電体メモリ装置
US5530668A (en) * 1995-04-12 1996-06-25 Ramtron International Corporation Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage
US5638318A (en) * 1995-09-11 1997-06-10 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US5682344A (en) * 1995-09-11 1997-10-28 Micron Technology, Inc. Destructive read protection using address blocking technique
US5677865A (en) * 1995-09-11 1997-10-14 Micron Technology, Inc. Ferroelectric memory using reference charge circuit
US5680344A (en) * 1995-09-11 1997-10-21 Micron Technology, Inc. Circuit and method of operating a ferrolectric memory in a DRAM mode
US5905672A (en) * 1997-03-27 1999-05-18 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
US6320782B1 (en) * 1996-06-10 2001-11-20 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
US6094370A (en) * 1996-06-10 2000-07-25 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
JP3766181B2 (ja) * 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
US5852571A (en) * 1997-03-14 1998-12-22 Micron Technology, Inc. Nonvolatile ferroelectric memory with folded bit line architecture
US6067244A (en) * 1997-10-14 2000-05-23 Yale University Ferroelectric dynamic random access memory
US6028783A (en) * 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US5969980A (en) * 1997-11-14 1999-10-19 Ramtron International Corporation Sense amplifier configuration for a 1T/1C ferroelectric memory
US5986919A (en) * 1997-11-14 1999-11-16 Ramtron International Corporation Reference cell configuration for a 1T/1C ferroelectric memory
US5956266A (en) * 1997-11-14 1999-09-21 Ramtron International Corporation Reference cell for a 1T/1C ferroelectric memory
US5892728A (en) * 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US5880989A (en) * 1997-11-14 1999-03-09 Ramtron International Corporation Sensing methodology for a 1T/1C ferroelectric memory
US5978251A (en) * 1997-11-14 1999-11-02 Ramtron International Corporation Plate line driver circuit for a 1T/1C ferroelectric memory
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US20050122765A1 (en) * 1997-11-14 2005-06-09 Allen Judith E. Reference cell configuration for a 1T/1C ferroelectric memory
US5995406A (en) * 1997-11-14 1999-11-30 Ramtron International Corporation Plate line segmentation in a 1T/1C ferroelectric memory
US5995407A (en) * 1998-10-13 1999-11-30 Celis Semiconductor Corporation Self-referencing ferroelectric memory
US6031754A (en) * 1998-11-02 2000-02-29 Celis Semiconductor Corporation Ferroelectric memory with increased switching voltage
US6282126B1 (en) 1998-12-16 2001-08-28 Micron Technology, Inc. Flash memory with overerase protection
JP2000187990A (ja) 1998-12-24 2000-07-04 Nec Corp センスアンプ回路及びそれを用いた記憶装置並びにそれに用いる読出し方法
JP3604576B2 (ja) 1999-02-19 2004-12-22 シャープ株式会社 強誘電体メモリ装置
US6201731B1 (en) 1999-05-28 2001-03-13 Celis Semiconductor Corporation Electronic memory with disturb prevention function
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
US6705981B2 (en) 2000-01-27 2004-03-16 Heidelberger Druckmaschinen Ag Device for retention of products on a transporting surface in a folder
JP3825756B2 (ja) * 2003-02-17 2006-09-27 富士通株式会社 半導体集積回路
JP4342833B2 (ja) * 2003-05-16 2009-10-14 Ｎｅｃエレクトロニクス株式会社 容量セルと半導体装置及びその製造方法
US7489561B2 (en) 2005-10-24 2009-02-10 Cyberonics, Inc. Implantable medical device with reconfigurable non-volatile program
KR100735748B1 (ko) 2005-11-09 2007-07-06 삼성전자주식회사 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
KR100735750B1 (ko) 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
KR101783933B1 (ko) * 2010-11-23 2017-10-11 한국전자통신연구원 메모리 셀 및 이를 이용한 메모리 장치
JP6145972B2 (ja) 2012-03-05 2017-06-14 富士通セミコンダクター株式会社 不揮発性ラッチ回路及びメモリ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510516A (en) * 1982-02-01 1985-04-09 Bartelink Dirk J Three-electrode MOS electron device
JPS60236191A (ja) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH0731908B2 (ja) * 1985-10-09 1995-04-10 株式会社東芝 半導体記憶装置
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4893272A (en) * 1988-04-22 1990-01-09 Ramtron Corporation Ferroelectric retention method
EP0338157B1 (de) * 1988-04-22 1994-07-06 Ramtron International Corporation DRAM-Zelle mit verstärkter Ladung

Also Published As

Publication number Publication date
EP0364813A3 (de) 1991-05-08
KR900006975A (ko) 1990-05-09
EP0364813B1 (de) 1994-03-23
EP0364813A2 (de) 1990-04-25
US5029128A (en) 1991-07-02
DE68914084D1 (de) 1994-04-28
JPH088339B2 (ja) 1996-01-29
JPH02110895A (ja) 1990-04-24
KR930000762B1 (ko) 1993-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee