DE68918894T2 - Statische MESFET-Speicherzelle mit wahlfreiem Zugriff. - Google Patents

Statische MESFET-Speicherzelle mit wahlfreiem Zugriff.

Info

Publication number
DE68918894T2
DE68918894T2 DE68918894T DE68918894T DE68918894T2 DE 68918894 T2 DE68918894 T2 DE 68918894T2 DE 68918894 T DE68918894 T DE 68918894T DE 68918894 T DE68918894 T DE 68918894T DE 68918894 T2 DE68918894 T2 DE 68918894T2
Authority
DE
Germany
Prior art keywords
mesfet
static
memory cell
random access
random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918894T
Other languages
English (en)
Other versions
DE68918894D1 (de
Inventor
Donald Wayne Plass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68918894D1 publication Critical patent/DE68918894D1/de
Application granted granted Critical
Publication of DE68918894T2 publication Critical patent/DE68918894T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE68918894T 1988-06-20 1989-04-25 Statische MESFET-Speicherzelle mit wahlfreiem Zugriff. Expired - Fee Related DE68918894T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/208,719 US4901279A (en) 1988-06-20 1988-06-20 MESFET sram with power saving current-limiting transistors

Publications (2)

Publication Number Publication Date
DE68918894D1 DE68918894D1 (de) 1994-11-24
DE68918894T2 true DE68918894T2 (de) 1995-04-20

Family

ID=22775744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918894T Expired - Fee Related DE68918894T2 (de) 1988-06-20 1989-04-25 Statische MESFET-Speicherzelle mit wahlfreiem Zugriff.

Country Status (4)

Country Link
US (1) US4901279A (de)
EP (1) EP0348326B1 (de)
JP (1) JP2594643B2 (de)
DE (1) DE68918894T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4972098A (en) * 1989-01-25 1990-11-20 U.S. Philips Corp. Integrated variable resistor circuit having MOS transistors
US5222039A (en) * 1990-11-28 1993-06-22 Thunderbird Technologies, Inc. Static random access memory (SRAM) including Fermi-threshold field effect transistors
US5732015A (en) * 1991-04-23 1998-03-24 Waferscale Integration, Inc. SRAM with a programmable reference voltage
JP3587542B2 (ja) * 1992-06-19 2004-11-10 インテル・コーポレーション 電力消費を節減する方法および装置
US5337273A (en) * 1993-07-30 1994-08-09 Sgs-Thomson Microelectronics, Inc. Charge sharing flash clear for memory arrays
US5570312A (en) * 1994-03-21 1996-10-29 United Microelectronics Corporation SRAM cell using word line controlled pull-up NMOS transistors
US6104631A (en) * 1997-12-17 2000-08-15 National Scientific Corp. Static memory cell with load circuit using a tunnel diode
US6301147B1 (en) 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
US10923482B2 (en) * 2019-04-29 2021-02-16 Globalfoundries U.S. Inc. IC product with a novel bit cell design and a memory array comprising such bit cells

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung
JPS54122941A (en) * 1978-03-16 1979-09-22 Nec Corp Memory circuit
DE2821975C2 (de) * 1978-05-19 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Metall-Halbleiter-Feldeffekttransistor (MESFET) und Verfahren zu dessen Herstellung
JPS5589984A (en) * 1978-12-28 1980-07-08 Fujitsu Ltd Static memory cell
DE3030852A1 (de) * 1980-08-14 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung fuer die pruefung von speicherzellen programmierbarer mos-integrierter halbleiterspeicher
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile
DE3278833D1 (en) * 1981-03-17 1988-09-01 Hitachi Ltd Dynamic type semiconductor monolithic memory
US4375677A (en) * 1981-05-20 1983-03-01 Schuermeyer Fritz L Dynamic random access memory cell using field effect devices
JPS581884A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd スタティックｒａｍの電源供給方式
DE3277750D1 (de) * 1981-09-01 1988-01-07 Fujitsu Ltd Semi-conductor memory circuit
US4460978A (en) * 1981-11-19 1984-07-17 Mostek Corporation Nonvolatile static random access memory cell
JPS6052518B2 (ja) * 1981-12-18 1985-11-19 富士通株式会社 半導体記憶装置
US4577215A (en) * 1983-02-18 1986-03-18 Rca Corporation Dual word line, electrically alterable, nonvolatile floating gate memory device
US4507758A (en) * 1982-06-03 1985-03-26 VEB Zentrum fur Forschung und Technologie Mikroelektronik im VEB Kombinat Mikroelektronik Semiconductor memory element with two field effect transistors
US4567577A (en) * 1982-11-04 1986-01-28 Texas Instruments Incorporated Impedance modulated CMOS RAM cell
JPS6059589A (ja) * 1983-09-12 1985-04-05 Toshiba Corp 半導体メモリ装置

Also Published As

Publication number Publication date
DE68918894D1 (de) 1994-11-24
EP0348326B1 (de) 1994-10-19
EP0348326A1 (de) 1989-12-27
JP2594643B2 (ja) 1997-03-26
US4901279A (en) 1990-02-13
JPH0227592A (ja) 1990-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee