DE3851416D1 - Statische Direktzugriffshalbleiterspeicheranordnung. - Google Patents
Statische Direktzugriffshalbleiterspeicheranordnung.Info
- Publication number
- DE3851416D1 DE3851416D1 DE3851416T DE3851416T DE3851416D1 DE 3851416 D1 DE3851416 D1 DE 3851416D1 DE 3851416 T DE3851416 T DE 3851416T DE 3851416 T DE3851416 T DE 3851416T DE 3851416 D1 DE3851416 D1 DE 3851416D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- random access
- semiconductor memory
- static random
- access semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62311578A JPH01152662A (ja) | 1987-12-09 | 1987-12-09 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3851416D1 true DE3851416D1 (de) | 1994-10-13 |
DE3851416T2 DE3851416T2 (de) | 1995-01-19 |
Family
ID=18018921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3851416T Expired - Fee Related DE3851416T2 (de) | 1987-12-09 | 1988-12-09 | Statische Direktzugriffshalbleiterspeicheranordnung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5012443A (de) |
EP (1) | EP0320405B1 (de) |
JP (1) | JPH01152662A (de) |
KR (1) | KR920000383B1 (de) |
DE (1) | DE3851416T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5350933A (en) * | 1990-02-21 | 1994-09-27 | Sony Corporation | Semiconductor CMOS static RAM with overlapping thin film transistors |
US5151376A (en) * | 1990-05-31 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Method of making polycrystalline silicon resistors for integrated circuits |
US5220532A (en) * | 1990-06-06 | 1993-06-15 | National Semiconductor Corporation | Self-locking load structure for static ram |
JP2965626B2 (ja) * | 1990-06-25 | 1999-10-18 | 株式会社東芝 | 半導体集積回路 |
JPH04102369A (ja) * | 1990-08-22 | 1992-04-03 | Mitsubishi Electric Corp | 半導体装置 |
US5324961A (en) * | 1991-01-30 | 1994-06-28 | Texas Instruments Incorporated | Stacked capacitor SRAM cell |
EP0499824B1 (de) * | 1991-01-30 | 1996-09-25 | Texas Instruments Incorporated | SRAM-Zelle mit geschichteter Kapazität |
KR940003410B1 (ko) * | 1991-08-01 | 1994-04-21 | 삼성전자 주식회사 | 망사 구조의 전원선을 가지는 반도체 메모리 장치 |
JP2916306B2 (ja) * | 1991-09-06 | 1999-07-05 | 株式会社東芝 | 半導体装置 |
JPH0613548A (ja) * | 1992-03-30 | 1994-01-21 | Texas Instr Inc <Ti> | 集積回路抵抗とその製法 |
US6037623A (en) * | 1992-04-16 | 2000-03-14 | Stmicroelectronics, Inc. | Polycrystalline silicon resistors for integrated circuits |
JPH07176633A (ja) * | 1993-12-20 | 1995-07-14 | Nec Corp | Cmos型スタティックメモリ |
KR100204012B1 (ko) * | 1996-05-13 | 1999-06-15 | 김영환 | 고저항 부하형 스태틱램 셀 및 그 제조방법 |
JP3064957B2 (ja) * | 1997-05-23 | 2000-07-12 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6586310B1 (en) | 1999-08-27 | 2003-07-01 | Agere Systems Inc. | High resistivity film for 4T SRAM |
US7023056B2 (en) * | 2003-11-26 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell structure |
US7365432B2 (en) * | 2004-08-23 | 2008-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell structure |
KR101914798B1 (ko) | 2010-07-20 | 2018-11-02 | 유니버시티 오브 버지니아 페이턴트 파운데이션 | 메모리 셀 |
CN104517987B (zh) * | 2013-09-27 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体存储控制单元、集成电路及集成电路的制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5910581B2 (ja) * | 1977-12-01 | 1984-03-09 | 富士通株式会社 | 半導体装置の製造方法 |
JPS5598852A (en) * | 1979-01-23 | 1980-07-28 | Nec Corp | Memory device |
US4453175A (en) * | 1979-09-19 | 1984-06-05 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Static RAM layout with polysilicon resistors over FET gates |
US4322824A (en) * | 1979-11-13 | 1982-03-30 | Texas Instruments Incorporated | Static random access memory with merged bit lines |
JPS5893347A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | Mos型半導体装置及びその製造方法 |
JPS61185964A (ja) * | 1985-02-13 | 1986-08-19 | Toshiba Corp | 半導体メモリ |
US4774203A (en) * | 1985-10-25 | 1988-09-27 | Hitachi, Ltd. | Method for making static random-access memory device |
JPS62210666A (ja) * | 1986-03-12 | 1987-09-16 | Hitachi Ltd | スタチツクram |
JPH07112014B2 (ja) * | 1986-07-09 | 1995-11-29 | 株式会社日立製作所 | 半導体記憶装置 |
-
1987
- 1987-12-09 JP JP62311578A patent/JPH01152662A/ja active Pending
-
1988
- 1988-12-06 US US07/280,473 patent/US5012443A/en not_active Expired - Fee Related
- 1988-12-09 KR KR1019880016374A patent/KR920000383B1/ko not_active IP Right Cessation
- 1988-12-09 DE DE3851416T patent/DE3851416T2/de not_active Expired - Fee Related
- 1988-12-09 EP EP88403146A patent/EP0320405B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3851416T2 (de) | 1995-01-19 |
EP0320405B1 (de) | 1994-09-07 |
KR920000383B1 (ko) | 1992-01-13 |
US5012443A (en) | 1991-04-30 |
KR890011089A (ko) | 1989-08-12 |
EP0320405A2 (de) | 1989-06-14 |
EP0320405A3 (de) | 1991-11-06 |
JPH01152662A (ja) | 1989-06-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |