DE3851416T2 - Statische Direktzugriffshalbleiterspeicheranordnung. - Google Patents

Statische Direktzugriffshalbleiterspeicheranordnung.

Info

Publication number
DE3851416T2
DE3851416T2 DE3851416T DE3851416T DE3851416T2 DE 3851416 T2 DE3851416 T2 DE 3851416T2 DE 3851416 T DE3851416 T DE 3851416T DE 3851416 T DE3851416 T DE 3851416T DE 3851416 T2 DE3851416 T2 DE 3851416T2
Authority
DE
Germany
Prior art keywords
memory device
random access
semiconductor memory
static random
access semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3851416T
Other languages
English (en)
Other versions
DE3851416D1 (de
Inventor
Taiji Ema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3851416D1 publication Critical patent/DE3851416D1/de
Application granted granted Critical
Publication of DE3851416T2 publication Critical patent/DE3851416T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE3851416T 1987-12-09 1988-12-09 Statische Direktzugriffshalbleiterspeicheranordnung. Expired - Fee Related DE3851416T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62311578A JPH01152662A (ja) 1987-12-09 1987-12-09 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3851416D1 DE3851416D1 (de) 1994-10-13
DE3851416T2 true DE3851416T2 (de) 1995-01-19

Family

ID=18018921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3851416T Expired - Fee Related DE3851416T2 (de) 1987-12-09 1988-12-09 Statische Direktzugriffshalbleiterspeicheranordnung.

Country Status (5)

Country Link
US (1) US5012443A (de)
EP (1) EP0320405B1 (de)
JP (1) JPH01152662A (de)
KR (1) KR920000383B1 (de)
DE (1) DE3851416T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5350933A (en) * 1990-02-21 1994-09-27 Sony Corporation Semiconductor CMOS static RAM with overlapping thin film transistors
US5151376A (en) * 1990-05-31 1992-09-29 Sgs-Thomson Microelectronics, Inc. Method of making polycrystalline silicon resistors for integrated circuits
US5220532A (en) * 1990-06-06 1993-06-15 National Semiconductor Corporation Self-locking load structure for static ram
JP2965626B2 (ja) * 1990-06-25 1999-10-18 株式会社東芝 半導体集積回路
JPH04102369A (ja) * 1990-08-22 1992-04-03 Mitsubishi Electric Corp 半導体装置
US5324961A (en) * 1991-01-30 1994-06-28 Texas Instruments Incorporated Stacked capacitor SRAM cell
DE69213973T2 (de) * 1991-01-30 1997-02-13 Texas Instruments Inc SRAM-Zelle mit geschichteter Kapazität
KR940003410B1 (ko) * 1991-08-01 1994-04-21 삼성전자 주식회사 망사 구조의 전원선을 가지는 반도체 메모리 장치
JP2916306B2 (ja) * 1991-09-06 1999-07-05 株式会社東芝 半導体装置
JPH0613548A (ja) * 1992-03-30 1994-01-21 Texas Instr Inc <Ti> 集積回路抵抗とその製法
US6037623A (en) * 1992-04-16 2000-03-14 Stmicroelectronics, Inc. Polycrystalline silicon resistors for integrated circuits
JPH07176633A (ja) * 1993-12-20 1995-07-14 Nec Corp Ｃｍｏｓ型スタティックメモリ
KR100204012B1 (ko) * 1996-05-13 1999-06-15 김영환 고저항 부하형 스태틱램 셀 및 그 제조방법
JP3064957B2 (ja) * 1997-05-23 2000-07-12 日本電気株式会社 半導体装置およびその製造方法
US6586310B1 (en) 1999-08-27 2003-07-01 Agere Systems Inc. High resistivity film for 4T SRAM
US7023056B2 (en) * 2003-11-26 2006-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell structure
US7365432B2 (en) * 2004-08-23 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell structure
KR101914798B1 (ko) 2010-07-20 2018-11-02 유니버시티 오브 버지니아 페이턴트 파운데이션 메모리 셀
CN104517987B (zh) * 2013-09-27 2019-01-22 中芯国际集成电路制造(上海)有限公司 半导体存储控制单元、集成电路及集成电路的制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910581B2 (ja) * 1977-12-01 1984-03-09 富士通株式会社 半導体装置の製造方法
JPS5598852A (en) * 1979-01-23 1980-07-28 Nec Corp Memory device
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
US4322824A (en) * 1979-11-13 1982-03-30 Texas Instruments Incorporated Static random access memory with merged bit lines
JPS5893347A (ja) * 1981-11-30 1983-06-03 Toshiba Corp Ｍｏｓ型半導体装置及びその製造方法
JPS61185964A (ja) * 1985-02-13 1986-08-19 Toshiba Corp 半導体メモリ
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
JPS62210666A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd スタチツクｒａｍ
JPH07112014B2 (ja) * 1986-07-09 1995-11-29 株式会社日立製作所 半導体記憶装置

Also Published As

Publication number Publication date
EP0320405B1 (de) 1994-09-07
US5012443A (en) 1991-04-30
JPH01152662A (ja) 1989-06-15
DE3851416D1 (de) 1994-10-13
EP0320405A2 (de) 1989-06-14
EP0320405A3 (de) 1991-11-06
KR920000383B1 (ko) 1992-01-13
KR890011089A (ko) 1989-08-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee