DE3876666D1 - Halbleiter-festwertspeichereinrichtung. - Google Patents
Halbleiter-festwertspeichereinrichtung.Info
- Publication number
- DE3876666D1 DE3876666D1 DE8888105638T DE3876666T DE3876666D1 DE 3876666 D1 DE3876666 D1 DE 3876666D1 DE 8888105638 T DE8888105638 T DE 8888105638T DE 3876666 T DE3876666 T DE 3876666T DE 3876666 D1 DE3876666 D1 DE 3876666D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- fixed memory
- semiconductor fixed
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62087482A JPS63252481A (ja) | 1987-04-09 | 1987-04-09 | 不揮発性半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3876666D1 true DE3876666D1 (de) | 1993-01-28 |
DE3876666T2 DE3876666T2 (de) | 1993-04-22 |
Family
ID=13916159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888105638T Expired - Lifetime DE3876666T2 (de) | 1987-04-09 | 1988-04-08 | Halbleiter-festwertspeichereinrichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4930105A (de) |
EP (1) | EP0286121B1 (de) |
JP (1) | JPS63252481A (de) |
KR (1) | KR910007401B1 (de) |
DE (1) | DE3876666T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3059442B2 (ja) | 1988-11-09 | 2000-07-04 | 株式会社日立製作所 | 半導体記憶装置 |
JP2573335B2 (ja) * | 1988-11-09 | 1997-01-22 | 株式会社東芝 | 不揮発性メモリ |
US5341329A (en) * | 1988-12-28 | 1994-08-23 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device capable of preventing read error caused by overerase state and method therefor |
DE68913190T2 (de) * | 1989-03-31 | 1994-08-04 | Philips Nv | EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht. |
JPH0338067A (ja) * | 1989-07-05 | 1991-02-19 | Toshiba Corp | 不揮発性半導体メモリ装置 |
US5032881A (en) * | 1990-06-29 | 1991-07-16 | National Semiconductor Corporation | Asymmetric virtual ground EPROM cell and fabrication method |
JP3002309B2 (ja) * | 1990-11-13 | 2000-01-24 | ウエハスケール インテグレーション, インコーポレイテッド | 高速epromアレイ |
JP3375087B2 (ja) * | 1991-10-21 | 2003-02-10 | ローム株式会社 | 半導体記憶装置およびその記憶情報読出方法 |
JP3522788B2 (ja) * | 1992-10-29 | 2004-04-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5617352A (en) * | 1995-12-13 | 1997-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon |
US5736891A (en) * | 1996-01-11 | 1998-04-07 | International Business Machines Corporation | Discharge circuit in a semiconductor memory |
EP0926686A1 (de) * | 1997-12-23 | 1999-06-30 | STMicroelectronics S.r.l. | Nichtflüchtiger Seriell-Flash-, EPROM-, EEPROM-, und Flash-EEPROM-Speicher in AMG-Konfiguration |
US6480422B1 (en) | 2001-06-14 | 2002-11-12 | Multi Level Memory Technology | Contactless flash memory with shared buried diffusion bit line architecture |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4258378A (en) * | 1978-05-26 | 1981-03-24 | Texas Instruments Incorporated | Electrically alterable floating gate memory with self-aligned low-threshold series enhancement transistor |
US4467453A (en) * | 1979-09-04 | 1984-08-21 | Texas Instruments Incorporated | Electrically programmable floating gate semiconductor memory device |
US4448400A (en) * | 1981-07-13 | 1984-05-15 | Eliyahou Harari | Highly scalable dynamic RAM cell with self-signal amplification |
JPS60113397A (ja) * | 1983-11-24 | 1985-06-19 | Fujitsu Ltd | プログラマブルリ−ドオンリメモリ装置 |
JPH0760864B2 (ja) * | 1984-07-13 | 1995-06-28 | 株式会社日立製作所 | 半導体集積回路装置 |
JPS61123169A (ja) * | 1984-11-20 | 1986-06-11 | Fujitsu Ltd | 半導体集積回路 |
US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
DE3587615D1 (de) * | 1984-11-26 | 1993-11-11 | Toshiba Kawasaki Kk | Nichtflüchtige Halbleiterspeicheranordnung. |
US4754320A (en) * | 1985-02-25 | 1988-06-28 | Kabushiki Kaisha Toshiba | EEPROM with sidewall control gate |
JPS61294870A (ja) * | 1985-06-21 | 1986-12-25 | Nec Corp | 不揮発性半導体記憶装置 |
US4794565A (en) * | 1986-09-15 | 1988-12-27 | The Regents Of The University Of California | Electrically programmable memory device employing source side injection |
JPH0777078B2 (ja) * | 1987-01-31 | 1995-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
US4788663A (en) * | 1987-04-24 | 1988-11-29 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with a lightly-doped drain structure |
-
1987
- 1987-04-09 JP JP62087482A patent/JPS63252481A/ja active Pending
-
1988
- 1988-04-07 US US07/178,609 patent/US4930105A/en not_active Expired - Lifetime
- 1988-04-08 DE DE8888105638T patent/DE3876666T2/de not_active Expired - Lifetime
- 1988-04-08 KR KR1019880003982A patent/KR910007401B1/ko not_active IP Right Cessation
- 1988-04-08 EP EP88105638A patent/EP0286121B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63252481A (ja) | 1988-10-19 |
EP0286121A2 (de) | 1988-10-12 |
DE3876666T2 (de) | 1993-04-22 |
KR910007401B1 (ko) | 1991-09-25 |
EP0286121A3 (en) | 1989-05-10 |
US4930105A (en) | 1990-05-29 |
KR880013174A (ko) | 1988-11-30 |
EP0286121B1 (de) | 1992-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3875767D1 (de) | Halbleiter-festwertspeichereinrichtung. | |
NL191814C (nl) | Halfgeleidergeheugeninrichting. | |
DE3887224D1 (de) | Halbleiterspeicheranordnung. | |
DE3850855D1 (de) | Halbleitervorrichtung. | |
DE3889097D1 (de) | Halbleiterspeicheranordnung. | |
DE68923505D1 (de) | Halbleiterspeicheranordnung. | |
DE3751002D1 (de) | Halbleiterspeicher. | |
DE68911044D1 (de) | Halbleiterspeicher. | |
DE3884022D1 (de) | Halbleiterspeicheranordnung. | |
DE68918367D1 (de) | Halbleiterspeicheranordnung. | |
DE3788747D1 (de) | Halbleiterspeicher. | |
KR880013252A (ko) | 반도체 기억장치 | |
DE69022537D1 (de) | Halbleiterspeicheranordnung. | |
DE3889872D1 (de) | Halbleiterspeicheranordnung. | |
DE68923588D1 (de) | Halbleiterspeicheranordnung. | |
DE3771238D1 (de) | Halbleiterspeicher. | |
DE68918193D1 (de) | Halbleiterspeicher. | |
DE3865702D1 (de) | Halbleiter-festwertspeichereinrichtung. | |
DE69017518D1 (de) | Halbleiterspeicheranordnung. | |
DE3887823D1 (de) | Halbleiterspeicher. | |
DE3889354D1 (de) | Halbleiteranordnung. | |
DE3853038D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung. | |
DE3789783D1 (de) | Halbleiterspeicheranordnung. | |
DE68924080D1 (de) | Halbleiterspeichervorrichtung. | |
DE3882150D1 (de) | Halbleiterspeichergeraet. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T |