DE68913190T2 - EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht. - Google Patents

EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht.

Info

Publication number
DE68913190T2
DE68913190T2 DE68913190T DE68913190T DE68913190T2 DE 68913190 T2 DE68913190 T2 DE 68913190T2 DE 68913190 T DE68913190 T DE 68913190T DE 68913190 T DE68913190 T DE 68913190T DE 68913190 T2 DE68913190 T2 DE 68913190T2
Authority
DE
Germany
Prior art keywords
row
bit line
region
transistors
injector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68913190T
Other languages
English (en)
Other versions
DE68913190D1 (de
Inventor
Jan C O Int Octrooi Middelhoek
Gerrit-Jan C O Int Octr Hemink
Rutger Cornelis Marinu Wijburg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE68913190D1 publication Critical patent/DE68913190D1/de
Application granted granted Critical
Publication of DE68913190T2 publication Critical patent/DE68913190T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE68913190T 1989-03-31 1989-03-31 EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht. Expired - Fee Related DE68913190T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89200830A EP0389693B1 (de) 1989-03-31 1989-03-31 EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht

Publications (2)

Publication Number Publication Date
DE68913190D1 DE68913190D1 (de) 1994-03-24
DE68913190T2 true DE68913190T2 (de) 1994-08-04

Family

ID=8202352

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913190T Expired - Fee Related DE68913190T2 (de) 1989-03-31 1989-03-31 EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht.

Country Status (6)

Country Link
US (1) US5017978A (de)
EP (1) EP0389693B1 (de)
JP (1) JP2967108B2 (de)
KR (1) KR0155375B1 (de)
AT (1) ATE101752T1 (de)
DE (1) DE68913190T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624864B2 (ja) * 1990-02-28 1997-06-25 株式会社東芝 不揮発性半導体メモリ
US5358887A (en) * 1993-11-26 1994-10-25 United Microelectronics Corporation Ulsi mask ROM structure and method of manufacture
US5949704A (en) * 1996-09-10 1999-09-07 Macronix International Co., Ltd. Stacked read-only memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112509A (en) * 1976-12-27 1978-09-05 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device
US4184207A (en) * 1978-01-27 1980-01-15 Texas Instruments Incorporated High density floating gate electrically programmable ROM
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4334292A (en) * 1980-05-27 1982-06-08 International Business Machines Corp. Low voltage electrically erasable programmable read only memory
EP0133667A3 (en) * 1983-08-12 1987-08-26 American Microsystems, Incorporated High coupling ratio dense electrically erasable programmable read-only memory
JPS60140600A (ja) * 1983-12-28 1985-07-25 Oki Electric Ind Co Ltd 不揮発性メモリ装置
FR2604022B1 (fr) * 1986-09-16 1992-09-11 Eurotechnique Sa Memoire non volatile a grille flottante sans oxyde epais
US4769788A (en) * 1986-09-22 1988-09-06 Ncr Corporation Shared line direct write nonvolatile memory cell array
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
JPH01208795A (ja) * 1988-02-16 1989-08-22 Toshiba Corp 半導体記憶装置
US4912676A (en) * 1988-08-09 1990-03-27 Texas Instruments, Incorporated Erasable programmable memory

Also Published As

Publication number Publication date
DE68913190D1 (de) 1994-03-24
ATE101752T1 (de) 1994-03-15
US5017978A (en) 1991-05-21
JPH02294068A (ja) 1990-12-05
KR900015153A (ko) 1990-10-26
EP0389693B1 (de) 1994-02-16
JP2967108B2 (ja) 1999-10-25
EP0389693A1 (de) 1990-10-03
KR0155375B1 (ko) 1998-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee