ATE101752T1 - Eprom, der eine mehrfache verwendung der bitleitungskontakte ermoeglicht. - Google Patents
Eprom, der eine mehrfache verwendung der bitleitungskontakte ermoeglicht.Info
- Publication number
- ATE101752T1 ATE101752T1 AT89200830T AT89200830T ATE101752T1 AT E101752 T1 ATE101752 T1 AT E101752T1 AT 89200830 T AT89200830 T AT 89200830T AT 89200830 T AT89200830 T AT 89200830T AT E101752 T1 ATE101752 T1 AT E101752T1
- Authority
- AT
- Austria
- Prior art keywords
- row
- region
- bit line
- transistors
- injector
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 230000001427 coherent effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP89200830A EP0389693B1 (de) | 1989-03-31 | 1989-03-31 | EPROM, der eine mehrfache Verwendung der Bitleitungskontakte ermöglicht |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE101752T1 true ATE101752T1 (de) | 1994-03-15 |
Family
ID=8202352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT89200830T ATE101752T1 (de) | 1989-03-31 | 1989-03-31 | Eprom, der eine mehrfache verwendung der bitleitungskontakte ermoeglicht. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5017978A (de) |
EP (1) | EP0389693B1 (de) |
JP (1) | JP2967108B2 (de) |
KR (1) | KR0155375B1 (de) |
AT (1) | ATE101752T1 (de) |
DE (1) | DE68913190T2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2624864B2 (ja) * | 1990-02-28 | 1997-06-25 | 株式会社東芝 | 不揮発性半導体メモリ |
US5358887A (en) * | 1993-11-26 | 1994-10-25 | United Microelectronics Corporation | Ulsi mask ROM structure and method of manufacture |
US5949704A (en) * | 1996-09-10 | 1999-09-07 | Macronix International Co., Ltd. | Stacked read-only memory |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4112509A (en) * | 1976-12-27 | 1978-09-05 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device |
US4184207A (en) * | 1978-01-27 | 1980-01-15 | Texas Instruments Incorporated | High density floating gate electrically programmable ROM |
US4281397A (en) * | 1979-10-29 | 1981-07-28 | Texas Instruments Incorporated | Virtual ground MOS EPROM or ROM matrix |
US4334292A (en) * | 1980-05-27 | 1982-06-08 | International Business Machines Corp. | Low voltage electrically erasable programmable read only memory |
EP0133667A3 (en) * | 1983-08-12 | 1987-08-26 | American Microsystems, Incorporated | High coupling ratio dense electrically erasable programmable read-only memory |
JPS60140600A (ja) * | 1983-12-28 | 1985-07-25 | Oki Electric Ind Co Ltd | 不揮発性メモリ装置 |
FR2604022B1 (fr) * | 1986-09-16 | 1992-09-11 | Eurotechnique Sa | Memoire non volatile a grille flottante sans oxyde epais |
US4769788A (en) * | 1986-09-22 | 1988-09-06 | Ncr Corporation | Shared line direct write nonvolatile memory cell array |
JPS63252481A (ja) * | 1987-04-09 | 1988-10-19 | Toshiba Corp | 不揮発性半導体メモリ |
JPH01208795A (ja) * | 1988-02-16 | 1989-08-22 | Toshiba Corp | 半導体記憶装置 |
US4912676A (en) * | 1988-08-09 | 1990-03-27 | Texas Instruments, Incorporated | Erasable programmable memory |
-
1989
- 1989-03-31 AT AT89200830T patent/ATE101752T1/de not_active IP Right Cessation
- 1989-03-31 EP EP89200830A patent/EP0389693B1/de not_active Expired - Lifetime
- 1989-03-31 DE DE68913190T patent/DE68913190T2/de not_active Expired - Fee Related
-
1990
- 1990-03-22 US US07/497,953 patent/US5017978A/en not_active Expired - Lifetime
- 1990-03-28 KR KR1019900004152A patent/KR0155375B1/ko not_active IP Right Cessation
- 1990-03-30 JP JP8141590A patent/JP2967108B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68913190D1 (de) | 1994-03-24 |
US5017978A (en) | 1991-05-21 |
JPH02294068A (ja) | 1990-12-05 |
DE68913190T2 (de) | 1994-08-04 |
KR900015153A (ko) | 1990-10-26 |
EP0389693B1 (de) | 1994-02-16 |
JP2967108B2 (ja) | 1999-10-25 |
EP0389693A1 (de) | 1990-10-03 |
KR0155375B1 (ko) | 1998-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |