JPS5589984A - Static memory cell - Google Patents

Static memory cell

Info

Publication number
JPS5589984A
JPS5589984A JP16254578A JP16254578A JPS5589984A JP S5589984 A JPS5589984 A JP S5589984A JP 16254578 A JP16254578 A JP 16254578A JP 16254578 A JP16254578 A JP 16254578A JP S5589984 A JPS5589984 A JP S5589984A
Authority
JP
Japan
Prior art keywords
memory cell
point
selection
power
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16254578A
Other languages
Japanese (ja)
Inventor
Keizo Aoyama
Eiji Noguchi
Takahiko Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16254578A priority Critical patent/JPS5589984A/en
Publication of JPS5589984A publication Critical patent/JPS5589984A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To enable low power consumption of static memory, by connecting the power saving circuit being the impedant enabling to flow a small current to the degree that the memory state of the memory cell can be kept at non-selection. CONSTITUTION:The power save circuit PD consists of MOSFETQ7, and it is connected between the power supply Vcc and the point A. Thus, at the chip non- selection when the chip selection signal CS is at L level, the impedance of Q7 is increased and the potential at the point A is lower than the power supply Vcc by the voltage drop of the transistor Q7. Accordingly, to the memory cell MEM, the difference voltage between the point A and GND lower than Vcc is fed, and current limit in response to the mutual conductance gm of the transistor Q7 is made, allowing to save the power consumption.
JP16254578A 1978-12-28 1978-12-28 Static memory cell Pending JPS5589984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16254578A JPS5589984A (en) 1978-12-28 1978-12-28 Static memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16254578A JPS5589984A (en) 1978-12-28 1978-12-28 Static memory cell

Publications (1)

Publication Number Publication Date
JPS5589984A true JPS5589984A (en) 1980-07-08

Family

ID=15756626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16254578A Pending JPS5589984A (en) 1978-12-28 1978-12-28 Static memory cell

Country Status (1)

Country Link
JP (1) JPS5589984A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0227592A (en) * 1988-06-20 1990-01-30 Internatl Business Mach Corp <Ibm> Static random access memory cell
JPH046695A (en) * 1990-04-21 1992-01-10 Toshiba Corp Semicondctor memory device
JPH04106789A (en) * 1990-08-27 1992-04-08 Mitsubishi Electric Corp Memory cell circuit for sram
JPH04162293A (en) * 1990-10-25 1992-06-05 Nec Corp Semiconductor memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0227592A (en) * 1988-06-20 1990-01-30 Internatl Business Mach Corp <Ibm> Static random access memory cell
JPH046695A (en) * 1990-04-21 1992-01-10 Toshiba Corp Semicondctor memory device
US5355331A (en) * 1990-04-21 1994-10-11 Kabushiki Kaisha Toshiba Semiconductor memory device having electrically isolated memory and logic sections
JPH04106789A (en) * 1990-08-27 1992-04-08 Mitsubishi Electric Corp Memory cell circuit for sram
JPH04162293A (en) * 1990-10-25 1992-06-05 Nec Corp Semiconductor memory

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