DE69022179T2 - Halbleiterspeichergeräte mit Serienzugriff. - Google Patents

Halbleiterspeichergeräte mit Serienzugriff.

Info

Publication number
DE69022179T2
DE69022179T2 DE69022179T DE69022179T DE69022179T2 DE 69022179 T2 DE69022179 T2 DE 69022179T2 DE 69022179 T DE69022179 T DE 69022179T DE 69022179 T DE69022179 T DE 69022179T DE 69022179 T2 DE69022179 T2 DE 69022179T2
Authority
DE
Germany
Prior art keywords
storage devices
semiconductor storage
serial access
serial
access
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69022179T
Other languages
English (en)
Other versions
DE69022179D1 (de
Inventor
Masataka Wakamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69022179D1 publication Critical patent/DE69022179D1/de
Publication of DE69022179T2 publication Critical patent/DE69022179T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
DE69022179T 1989-11-30 1990-11-29 Halbleiterspeichergeräte mit Serienzugriff. Expired - Lifetime DE69022179T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1311060A JP2900451B2 (ja) 1989-11-30 1989-11-30 メモリ装置

Publications (2)

Publication Number Publication Date
DE69022179D1 DE69022179D1 (de) 1995-10-12
DE69022179T2 true DE69022179T2 (de) 1996-02-01

Family

ID=18012633

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022179T Expired - Lifetime DE69022179T2 (de) 1989-11-30 1990-11-29 Halbleiterspeichergeräte mit Serienzugriff.

Country Status (4)

Country Link
US (1) US5206831A (de)
EP (1) EP0430682B1 (de)
JP (1) JP2900451B2 (de)
DE (1) DE69022179T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158286B2 (ja) * 1991-04-30 2001-04-23 ソニー株式会社 マルチポートメモリ
US5325502A (en) * 1991-05-15 1994-06-28 Micron Technology, Inc. Pipelined SAM register serial output
JP2796590B2 (ja) * 1991-08-07 1998-09-10 三菱電機株式会社 メモリ装置及びそれを使用したデータ処理装置
JP3134449B2 (ja) * 1992-02-13 2001-02-13 日本電気株式会社 シリアル・パラレル変換回路
KR950013342B1 (ko) * 1992-10-06 1995-11-02 삼성전자주식회사 반도체 메모리장치의 결함구제회로
JP2741824B2 (ja) * 1992-10-14 1998-04-22 三菱電機株式会社 半導体記憶装置
US5508963A (en) * 1993-03-12 1996-04-16 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
US5377146A (en) * 1993-07-23 1994-12-27 Alliance Semiconductor Corporation Hierarchical redundancy scheme for high density monolithic memories
JP3226425B2 (ja) * 1994-09-09 2001-11-05 富士通株式会社 半導体記憶装置
US5678017A (en) * 1995-03-24 1997-10-14 Micron Technology, Inc. Automatic reloading of serial read operation pipeline on last bit transfers to serial access memory in split read transfer operations
JP3774500B2 (ja) * 1995-05-12 2006-05-17 株式会社ルネサステクノロジ 半導体記憶装置
JPH0935495A (ja) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp 半導体記憶装置
JP2850953B2 (ja) * 1996-07-30 1999-01-27 日本電気株式会社 半導体装置
US5731734A (en) * 1996-10-07 1998-03-24 Atmel Corporation Zero power fuse circuit
US5859801A (en) * 1997-03-28 1999-01-12 Siemens Aktiengesellschaft Flexible fuse placement in redundant semiconductor memory
US5872823A (en) * 1997-04-02 1999-02-16 Sutton; Todd R. Reliable switching between data sources in a synchronous communication system
US6018488A (en) * 1997-06-26 2000-01-25 Kabushiki Kaisha Toshiba Semiconductor memory device and method relieving defect of semiconductor memory device
JP3638214B2 (ja) * 1998-07-30 2005-04-13 株式会社 沖マイクロデザイン 冗長回路
JP3967526B2 (ja) * 2000-06-05 2007-08-29 富士通株式会社 半導体記憶装置及び半導体記憶装置の制御方法
US6542421B2 (en) 2000-06-05 2003-04-01 Fujitsu Limited Semiconductor memory device with redundancy circuit
JP2002050191A (ja) * 2000-08-02 2002-02-15 Fujitsu Ltd 半導体記憶装置
JP4080843B2 (ja) * 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
KR100618828B1 (ko) * 2003-06-04 2006-08-31 삼성전자주식회사 테스트 모드에서 더 낮은 율로 데이터 비트들을 출력하는반도체 메모리장치 및 동작방법
US7509543B2 (en) * 2003-06-17 2009-03-24 Micron Technology, Inc. Circuit and method for error test, recordation, and repair
US20050050400A1 (en) * 2003-08-30 2005-03-03 Wuu John J. Shift redundancy encoding for use with digital memories
JP2006012211A (ja) * 2004-06-22 2006-01-12 Toshiba Corp 半導体集積回路
TW200615963A (en) * 2004-10-07 2006-05-16 Amic Technology Corp Memory structure which having repair function and its repair method
CA2597424C (en) * 2005-02-10 2013-03-05 Wilson-Cook Medical, Inc. Wire guide holder with wire guide deflector
KR100648288B1 (ko) * 2005-07-22 2006-11-23 삼성전자주식회사 불 휘발성 메모리 장치의 리던던시 선택 회로
US7324389B2 (en) 2006-03-24 2008-01-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in remote buffer circuits
JP2009531796A (ja) * 2006-03-24 2009-09-03 サンディスク コーポレイション 欠陥のある位置のためのデータラッチに冗長データがバッファされる不揮発性メモリおよび方法
US7352635B2 (en) 2006-03-24 2008-04-01 Sandisk Corporation Method for remote redundancy for non-volatile memory
US7394690B2 (en) * 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
US9135099B2 (en) * 2012-03-29 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory error correction

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148200A (ja) * 1984-08-14 1986-03-08 Fujitsu Ltd 半導体記憶装置
DE3587309T2 (de) * 1985-01-22 1993-10-21 Texas Instruments Inc Mehrfachvideospeichersystem mit Bildelementkartierung.
US4719601A (en) * 1986-05-02 1988-01-12 International Business Machine Corporation Column redundancy for two port random access memory
JPH01119995A (ja) * 1987-11-02 1989-05-12 Toshiba Corp 半導体メモリ
NL8702606A (nl) * 1987-11-02 1989-06-01 Philips Nv Serie-parallel-serie-geheugen voorzien van redundante opslagkolommen en beeldgeheugen voorzien van zulke serie-parallel-serie-geheugens.

Also Published As

Publication number Publication date
JP2900451B2 (ja) 1999-06-02
EP0430682A2 (de) 1991-06-05
DE69022179D1 (de) 1995-10-12
US5206831A (en) 1993-04-27
EP0430682A3 (en) 1992-10-21
EP0430682B1 (de) 1995-09-06
JPH03171499A (ja) 1991-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition