DE68926924T2 - Halbleiterspeichergerät - Google Patents
HalbleiterspeichergerätInfo
- Publication number
- DE68926924T2 DE68926924T2 DE68926924T DE68926924T DE68926924T2 DE 68926924 T2 DE68926924 T2 DE 68926924T2 DE 68926924 T DE68926924 T DE 68926924T DE 68926924 T DE68926924 T DE 68926924T DE 68926924 T2 DE68926924 T2 DE 68926924T2
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- semiconductor storage
- semiconductor
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/176,473 US4885720A (en) | 1988-04-01 | 1988-04-01 | Memory device and method implementing wordline redundancy without an access time penalty |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68926924D1 DE68926924D1 (de) | 1996-09-19 |
DE68926924T2 true DE68926924T2 (de) | 1997-02-06 |
Family
ID=22644497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68926924T Expired - Lifetime DE68926924T2 (de) | 1988-04-01 | 1989-02-25 | Halbleiterspeichergerät |
Country Status (5)
Country | Link |
---|---|
US (1) | US4885720A (de) |
EP (1) | EP0336101B1 (de) |
JP (1) | JP2531780B2 (de) |
CA (1) | CA1314988C (de) |
DE (1) | DE68926924T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0235697A (ja) * | 1988-07-26 | 1990-02-06 | Nec Corp | メモリ回路 |
JPH0235699A (ja) * | 1988-07-26 | 1990-02-06 | Nec Corp | 化合物半導体メモリデバイス |
JPH0283899A (ja) * | 1988-09-20 | 1990-03-23 | Fujitsu Ltd | 半導体記憶装置 |
JPH02177087A (ja) * | 1988-12-27 | 1990-07-10 | Nec Corp | リダンダンシーデコーダ |
JP2547633B2 (ja) * | 1989-05-09 | 1996-10-23 | 三菱電機株式会社 | 半導体記憶装置 |
JPH0734314B2 (ja) * | 1989-07-13 | 1995-04-12 | 株式会社東芝 | 半導体記憶装置 |
JP2738195B2 (ja) * | 1991-12-27 | 1998-04-08 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
KR960002777B1 (ko) * | 1992-07-13 | 1996-02-26 | 삼성전자주식회사 | 반도체 메모리 장치의 로우 리던던시 장치 |
GB9305801D0 (en) * | 1993-03-19 | 1993-05-05 | Deans Alexander R | Semiconductor memory system |
US6108237A (en) * | 1997-07-17 | 2000-08-22 | Micron Technology, Inc. | Fast-sensing amplifier for flash memory |
US5627786A (en) * | 1995-02-10 | 1997-05-06 | Micron Quantum Devices, Inc. | Parallel processing redundancy scheme for faster access times and lower die area |
US5691951A (en) * | 1996-11-04 | 1997-11-25 | Micron Technology, Inc. | Staggered row line firing in single ras cycle |
US6058052A (en) * | 1997-08-21 | 2000-05-02 | Cypress Semiconductor Corp. | Redundancy scheme providing improvements in redundant circuit access time and integrated circuit layout area |
US6571348B1 (en) * | 1999-04-06 | 2003-05-27 | Genesis Semiconductor, Inc. | Method of and apparatus for providing look ahead column redundancy access within a memory |
US8164362B2 (en) * | 2000-02-02 | 2012-04-24 | Broadcom Corporation | Single-ended sense amplifier with sample-and-hold reference |
US7173867B2 (en) * | 2001-02-02 | 2007-02-06 | Broadcom Corporation | Memory redundancy circuit techniques |
KR100338776B1 (ko) * | 2000-07-11 | 2002-05-31 | 윤종용 | 멀티 로우 어드레스 테스트 가능한 반도체 메모리 장치 및그 테스트 방법 |
DE10038664B4 (de) * | 2000-08-08 | 2009-08-27 | Qimonda Ag | Halbleiterspeicher mit Redundanz-Schaltung für Wortleitungen |
US6992937B2 (en) * | 2003-07-28 | 2006-01-31 | Silicon Storage Technology, Inc. | Column redundancy for digital multilevel nonvolatile memory |
US7035152B1 (en) * | 2004-10-14 | 2006-04-25 | Micron Technology, Inc. | System and method for redundancy memory decoding |
KR20120135642A (ko) * | 2011-06-07 | 2012-12-17 | 에스케이하이닉스 주식회사 | 워드라인 구동신호 제어 회로 및 이를 구비하는 반도체 메모리 장치와 워드라인 구동 방법 |
US10872678B1 (en) * | 2019-06-19 | 2020-12-22 | Micron Technology, Inc. | Speculative section selection within a memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3753244A (en) * | 1971-08-18 | 1973-08-14 | Ibm | Yield enhancement redundancy technique |
JPS5928560Y2 (ja) * | 1979-11-13 | 1984-08-17 | 富士通株式会社 | 冗長ビットを有する記憶装置 |
US4441170A (en) * | 1980-09-30 | 1984-04-03 | Intel Corporation | Memory redundancy apparatus for single chip memories |
JPS62134899A (ja) * | 1985-12-06 | 1987-06-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4928068A (en) * | 1989-05-01 | 1990-05-22 | Motorola Inc. | FM demodulator |
-
1988
- 1988-04-01 US US07/176,473 patent/US4885720A/en not_active Expired - Lifetime
-
1989
- 1989-02-25 DE DE68926924T patent/DE68926924T2/de not_active Expired - Lifetime
- 1989-02-25 EP EP89103365A patent/EP0336101B1/de not_active Expired - Lifetime
- 1989-03-02 CA CA000592552A patent/CA1314988C/en not_active Expired - Fee Related
- 1989-03-20 JP JP1066426A patent/JP2531780B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE68926924D1 (de) | 1996-09-19 |
US4885720A (en) | 1989-12-05 |
JP2531780B2 (ja) | 1996-09-04 |
EP0336101A3 (de) | 1991-03-27 |
JPH0212700A (ja) | 1990-01-17 |
EP0336101A2 (de) | 1989-10-11 |
EP0336101B1 (de) | 1996-08-14 |
CA1314988C (en) | 1993-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8330 | Complete disclaimer | ||
8330 | Complete disclaimer |