DE69124940D1 - Halbleiter-Speichereinrichtung - Google Patents

Halbleiter-Speichereinrichtung

Info

Publication number
DE69124940D1
DE69124940D1 DE69124940T DE69124940T DE69124940D1 DE 69124940 D1 DE69124940 D1 DE 69124940D1 DE 69124940 T DE69124940 T DE 69124940T DE 69124940 T DE69124940 T DE 69124940T DE 69124940 D1 DE69124940 D1 DE 69124940D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69124940T
Other languages
English (en)
Other versions
DE69124940T2 (de
Inventor
Kazuo Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69124940D1 publication Critical patent/DE69124940D1/de
Publication of DE69124940T2 publication Critical patent/DE69124940T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
DE69124940T 1990-11-30 1991-12-02 Halbleiter-Speichereinrichtung Expired - Fee Related DE69124940T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2340104A JP3050326B2 (ja) 1990-11-30 1990-11-30 半導体集積回路

Publications (2)

Publication Number Publication Date
DE69124940D1 true DE69124940D1 (de) 1997-04-10
DE69124940T2 DE69124940T2 (de) 1997-10-09

Family

ID=18333757

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124940T Expired - Fee Related DE69124940T2 (de) 1990-11-30 1991-12-02 Halbleiter-Speichereinrichtung

Country Status (5)

Country Link
US (1) US5208777A (de)
EP (1) EP0488425B1 (de)
JP (1) JP3050326B2 (de)
KR (1) KR960005368B1 (de)
DE (1) DE69124940T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612896A (ja) * 1992-04-28 1994-01-21 Nec Corp 半導体記憶装置
JPH0612878A (ja) * 1992-06-25 1994-01-21 Mitsubishi Electric Corp 半導体メモリ装置
KR950003014B1 (ko) * 1992-07-31 1995-03-29 삼성전자 주식회사 반도체 메모리 장치의 번-인 테스트회로 및 번-인 테스트방법
US5831918A (en) 1994-02-14 1998-11-03 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
US6587978B1 (en) 1994-02-14 2003-07-01 Micron Technology, Inc. Circuit and method for varying a pulse width of an internal control signal during a test mode
US5568435A (en) * 1995-04-12 1996-10-22 Micron Technology, Inc. Circuit for SRAM test mode isolated bitline modulation
US5991214A (en) * 1996-06-14 1999-11-23 Micron Technology, Inc. Circuit and method for varying a period of an internal control signal during a test mode
KR100480568B1 (ko) * 1997-10-27 2005-09-30 삼성전자주식회사 고전압검출부,및이를구비한반도체메모리장치와반도체메모리장치의모드구별방법
CA2317981A1 (en) 1999-09-14 2001-03-14 Jennmar Corporation Grit surface cable products
KR100542695B1 (ko) * 2003-11-13 2006-01-11 주식회사 하이닉스반도체 반도체 소자의 테스트 모드 회로
KR102246878B1 (ko) 2014-05-29 2021-04-30 삼성전자 주식회사 반도체 메모리 장치, 이를 포함하는 메모리 모듈, 및 이를 포함하는 메모리 시스템

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53145431A (en) * 1977-05-24 1978-12-18 Fujitsu Ltd Test method for memory
JPS62250593A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd ダイナミツク型ｒａｍ
JPS6337894A (ja) * 1986-07-30 1988-02-18 Mitsubishi Electric Corp ランダムアクセスメモリ
JPH0748318B2 (ja) * 1988-03-14 1995-05-24 三菱電機株式会社 半導体記憶回路およびそのテスト方法
US5051995A (en) * 1988-03-14 1991-09-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a test mode setting circuit
JPH02146175A (ja) * 1988-11-28 1990-06-05 Nec Corp メモリセル対極電圧供給回路
JPH02255925A (ja) * 1988-11-30 1990-10-16 Hitachi Ltd メモリテスト方法および装置
JPH02177194A (ja) * 1988-12-28 1990-07-10 Mitsubishi Electric Corp ダイナミックランダムアクセスメモリ装置
JPH02197163A (ja) * 1989-01-26 1990-08-03 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH07105160B2 (ja) * 1989-05-20 1995-11-13 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JPH0322300A (ja) * 1989-06-16 1991-01-30 Matsushita Electron Corp 半導体記憶装置
US5134587A (en) * 1990-08-17 1992-07-28 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with automatic test mode exit on chip enable

Also Published As

Publication number Publication date
DE69124940T2 (de) 1997-10-09
EP0488425B1 (de) 1997-03-05
KR920010656A (ko) 1992-06-27
US5208777A (en) 1993-05-04
EP0488425A1 (de) 1992-06-03
JP3050326B2 (ja) 2000-06-12
JPH04209388A (ja) 1992-07-30
KR960005368B1 (ko) 1996-04-24

Similar Documents

Publication Publication Date Title
DE69132121D1 (de) Halbleiterspeichervorrichtung
DE69228905D1 (de) Halbleiterspeichergerät
DE69123666T2 (de) Halbleiterspeicheranordnung
DE69125671D1 (de) Halbleiter-Speicherbauteil
DE69125206T2 (de) Halbleiterspeicheranordnung
DE69121801T2 (de) Halbleiterspeicheranordnung
DE69123379D1 (de) Halbleiterspeichervorrichtung
DE69125535T2 (de) Halbleiterspeicheranordnung
DE69224245D1 (de) Halbleiter-Speichereinrichtung
DE69024680D1 (de) Halbleiter-Speichereinrichtung
DE69125339D1 (de) Halbleiterspeicheranordnung
DE69032303T2 (de) Halbleiter-Speichereinrichtung
DE69124711T2 (de) Halbleiter-Speichereinrichtung
DE69124940D1 (de) Halbleiter-Speichereinrichtung
DE69123294T2 (de) Halbleiterspeicheranordnung
DE69214313D1 (de) Halbleiter-Speichereinrichtung
DE69124286T2 (de) Halbleiterspeicheranordnung
DE69122293D1 (de) Halbleiterspeicheranordnung
DE69124022T2 (de) Halbleiterspeicheranordnung
DE69119141D1 (de) Halbleiterspeicheranordnung
DE69122909D1 (de) Halbleiterspeicheranordnung
DE69121804T2 (de) Halbleiterspeicheranordnung
DE69119252T2 (de) Halbleiterspeicheranordnung
DE69121366T2 (de) Halbleiterspeicheranordnung
DE69122192D1 (de) Halbleiterspeichereinrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee