DE69125671D1 - Halbleiter-Speicherbauteil - Google Patents

Halbleiter-Speicherbauteil

Info

Publication number
DE69125671D1
DE69125671D1 DE69125671T DE69125671T DE69125671D1 DE 69125671 D1 DE69125671 D1 DE 69125671D1 DE 69125671 T DE69125671 T DE 69125671T DE 69125671 T DE69125671 T DE 69125671T DE 69125671 D1 DE69125671 D1 DE 69125671D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125671T
Other languages
English (en)
Other versions
DE69125671T2 (de
Inventor
Toshiyuki Nishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02414488A external-priority patent/JP3128829B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69125671D1 publication Critical patent/DE69125671D1/de
Application granted granted Critical
Publication of DE69125671T2 publication Critical patent/DE69125671T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
DE69125671T 1990-09-10 1991-09-05 Halbleiter-Speicherbauteil Expired - Fee Related DE69125671T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2239418A JP3003188B2 (ja) 1990-09-10 1990-09-10 半導体メモリ及びその製造方法
JP02414488A JP3128829B2 (ja) 1990-12-26 1990-12-26 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69125671D1 true DE69125671D1 (de) 1997-05-22
DE69125671T2 DE69125671T2 (de) 1997-11-27

Family

ID=26534240

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125671T Expired - Fee Related DE69125671T2 (de) 1990-09-10 1991-09-05 Halbleiter-Speicherbauteil

Country Status (6)

Country Link
US (1) US5424235A (de)
EP (1) EP0475280B1 (de)
JP (1) JP3003188B2 (de)
KR (1) KR100225545B1 (de)
DE (1) DE69125671T2 (de)
TW (1) TW200602B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722517A (ja) * 1993-06-22 1995-01-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5585284A (en) * 1993-07-02 1996-12-17 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a SOI DRAM
US5396452A (en) * 1993-07-02 1995-03-07 Wahlstrom; Sven E. Dynamic random access memory
US6242772B1 (en) 1994-12-12 2001-06-05 Altera Corporation Multi-sided capacitor in an integrated circuit
KR0140657B1 (ko) * 1994-12-31 1998-06-01 김주용 반도체 소자의 제조방법
US5776789A (en) * 1995-06-05 1998-07-07 Fujitsu Limited Method for fabricating a semiconductor memory device
US6831322B2 (en) * 1995-06-05 2004-12-14 Fujitsu Limited Semiconductor memory device and method for fabricating the same
JPH0982918A (ja) * 1995-09-19 1997-03-28 Toshiba Corp 半導体記憶装置およびその製造方法
US5731217A (en) * 1996-10-08 1998-03-24 Advanced Micro Devices, Inc. Multi-level transistor fabrication method with a filled upper transistor substrate and interconnection thereto
US5882959A (en) * 1996-10-08 1999-03-16 Advanced Micro Devices, Inc. Multi-level transistor fabrication method having an inverted, upper level transistor which shares a gate conductor with a non-inverted, lower level transistor
US5872029A (en) * 1996-11-07 1999-02-16 Advanced Micro Devices, Inc. Method for forming an ultra high density inverter using a stacked transistor arrangement
US5926700A (en) 1997-05-02 1999-07-20 Advanced Micro Devices, Inc. Semiconductor fabrication having multi-level transistors and high density interconnect therebetween
US5888872A (en) 1997-06-20 1999-03-30 Advanced Micro Devices, Inc. Method for forming source drain junction areas self-aligned between a sidewall spacer and an etched lateral sidewall
US5818069A (en) 1997-06-20 1998-10-06 Advanced Micro Devices, Inc. Ultra high density series-connected transistors formed on separate elevational levels
US6423596B1 (en) * 1998-09-29 2002-07-23 Texas Instruments Incorporated Method for two-sided fabrication of a memory array
US6465331B1 (en) * 2000-08-31 2002-10-15 Micron Technology, Inc. DRAM fabricated on a silicon-on-insulator (SOI) substrate having bi-level digit lines
DE10105725B4 (de) * 2001-02-08 2008-11-13 Infineon Technologies Ag Halbleiterchip mit einem Substrat, einer integrierten Schaltung und einer Abschirmvorrichtung
US6800892B2 (en) * 2003-02-10 2004-10-05 Micron Technology, Inc. Memory devices, and electronic systems comprising memory devices
US6717839B1 (en) 2003-03-31 2004-04-06 Ramtron International Corporation Bit-line shielding method for ferroelectric memories
KR100615085B1 (ko) 2004-01-12 2006-08-22 삼성전자주식회사 노드 콘택 구조체들, 이를 채택하는 반도체소자들, 이를채택하는 에스램 셀들 및 이를 제조하는 방법들
US7858468B2 (en) 2008-10-30 2010-12-28 Micron Technology, Inc. Memory devices and formation methods
FR2955200B1 (fr) 2010-01-14 2012-07-20 Soitec Silicon On Insulator Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
CN101976681B (zh) * 2010-08-27 2012-09-26 东南大学 一种提高电流密度的p型绝缘体上硅横向器件及其制备工艺
TWI572009B (zh) 2011-01-14 2017-02-21 半導體能源研究所股份有限公司 半導體記憶裝置
US8686486B2 (en) * 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
KR102616259B1 (ko) * 2022-05-06 2023-12-20 (주)서연인테크 독립형 푸드 테이블

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
US4501060A (en) * 1983-01-24 1985-02-26 At&T Bell Laboratories Dielectrically isolated semiconductor devices
DE3565339D1 (en) * 1984-04-19 1988-11-03 Nippon Telegraph & Telephone Semiconductor memory device and method of manufacturing the same
US4763180A (en) * 1986-12-22 1988-08-09 International Business Machines Corporation Method and structure for a high density VMOS dynamic ram array
EP0283964B1 (de) * 1987-03-20 1994-09-28 Nec Corporation Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
JP2510865B2 (ja) * 1987-08-20 1996-06-26 日本電信電話株式会社 無線印刷電信における一括呼出方法
JP2590171B2 (ja) * 1988-01-08 1997-03-12 株式会社日立製作所 半導体記憶装置
JPH0235771A (ja) * 1988-07-26 1990-02-06 Nec Corp 半導体記憶装置
JP2743391B2 (ja) * 1988-08-25 1998-04-22 ソニー株式会社 半導体メモリの製造方法
US5192704A (en) * 1989-06-30 1993-03-09 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell

Also Published As

Publication number Publication date
KR920007199A (ko) 1992-04-28
DE69125671T2 (de) 1997-11-27
JPH04118967A (ja) 1992-04-20
KR100225545B1 (ko) 1999-10-15
EP0475280A1 (de) 1992-03-18
US5424235A (en) 1995-06-13
JP3003188B2 (ja) 2000-01-24
TW200602B (de) 1993-02-21
EP0475280B1 (de) 1997-04-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee