DE69128819D1 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69128819D1 DE69128819D1 DE69128819T DE69128819T DE69128819D1 DE 69128819 D1 DE69128819 D1 DE 69128819D1 DE 69128819 T DE69128819 T DE 69128819T DE 69128819 T DE69128819 T DE 69128819T DE 69128819 D1 DE69128819 D1 DE 69128819D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21391990 | 1990-08-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69128819D1 true DE69128819D1 (de) | 1998-03-05 |
DE69128819T2 DE69128819T2 (de) | 1998-05-14 |
Family
ID=16647217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69128819T Expired - Fee Related DE69128819T2 (de) | 1990-08-13 | 1991-08-12 | Halbleiterspeicheranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5534724A (de) |
EP (1) | EP0471535B1 (de) |
KR (1) | KR950011645B1 (de) |
DE (1) | DE69128819T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6212089B1 (en) * | 1996-03-19 | 2001-04-03 | Hitachi, Ltd. | Semiconductor memory device and defect remedying method thereof |
DE69517693T2 (de) * | 1995-12-29 | 2001-03-01 | St Microelectronics Srl | Standardzellenbibliothek für den Entwurf von integrierten Schaltungen |
JP3311244B2 (ja) | 1996-07-15 | 2002-08-05 | 株式会社東芝 | 基本セルライブラリ及びその形成方法 |
TW306054B (en) * | 1996-07-16 | 1997-05-21 | Winbond Electronics Corp | Bit line pull up circuit of static random access memory |
JP2000077609A (ja) | 1998-08-28 | 2000-03-14 | Hitachi Ltd | 半導体集積回路装置 |
US6381166B1 (en) * | 1998-09-28 | 2002-04-30 | Texas Instruments Incorporated | Semiconductor memory device having variable pitch array |
KR100291384B1 (ko) * | 1998-12-31 | 2001-07-12 | 윤종용 | 반도체장치의레이아웃방법 |
JP3408466B2 (ja) * | 1999-08-23 | 2003-05-19 | エヌイーシーマイクロシステム株式会社 | 半導体記憶装置 |
JP2001068635A (ja) * | 1999-08-27 | 2001-03-16 | Mitsubishi Electric Corp | 半導体装置 |
JP4068340B2 (ja) * | 2001-12-17 | 2008-03-26 | エルピーダメモリ株式会社 | 半導体集積回路装置 |
JP4388274B2 (ja) | 2002-12-24 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP4599048B2 (ja) * | 2003-10-02 | 2010-12-15 | 川崎マイクロエレクトロニクス株式会社 | 半導体集積回路のレイアウト構造、半導体集積回路のレイアウト方法、およびフォトマスク |
JP2007129026A (ja) * | 2005-11-02 | 2007-05-24 | Nec Electronics Corp | 半導体装置および配線パターン形成方法、マスク配線データ発生方法 |
CN101673735B (zh) * | 2008-09-12 | 2011-11-16 | 台湾积体电路制造股份有限公司 | 默认多晶硅间距设计规则下的混合多晶硅间距单元设计结构及系统 |
US7932566B2 (en) * | 2008-12-31 | 2011-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and system of mixing poly pitch cell design under default poly pitch design rules |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58111183A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | ダイナミツクram集積回路装置 |
JPH0658947B2 (ja) * | 1984-02-24 | 1994-08-03 | 株式会社日立製作所 | 半導体メモリ装置の製法 |
US4891792A (en) * | 1987-09-04 | 1990-01-02 | Hitachi, Ltd. | Static type semiconductor memory with multi-stage sense amplifier |
JPH0828467B2 (ja) * | 1988-11-15 | 1996-03-21 | 株式会社東芝 | 半導体装置 |
-
1991
- 1991-08-12 DE DE69128819T patent/DE69128819T2/de not_active Expired - Fee Related
- 1991-08-12 EP EP91307401A patent/EP0471535B1/de not_active Expired - Lifetime
- 1991-08-12 KR KR1019910013859A patent/KR950011645B1/ko not_active IP Right Cessation
-
1994
- 1994-06-09 US US08/257,583 patent/US5534724A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR950011645B1 (ko) | 1995-10-07 |
EP0471535A3 (en) | 1993-08-18 |
EP0471535B1 (de) | 1998-01-28 |
KR920005341A (ko) | 1992-03-28 |
DE69128819T2 (de) | 1998-05-14 |
EP0471535A2 (de) | 1992-02-19 |
US5534724A (en) | 1996-07-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |