DE69128400D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69128400D1
DE69128400D1 DE69128400T DE69128400T DE69128400D1 DE 69128400 D1 DE69128400 D1 DE 69128400D1 DE 69128400 T DE69128400 T DE 69128400T DE 69128400 T DE69128400 T DE 69128400T DE 69128400 D1 DE69128400 D1 DE 69128400D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69128400T
Other languages
English (en)
Other versions
DE69128400T2 (de
Inventor
Nobuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69128400D1 publication Critical patent/DE69128400D1/de
Publication of DE69128400T2 publication Critical patent/DE69128400T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69128400T 1990-10-02 1991-10-02 Halbleiterspeicheranordnung Expired - Lifetime DE69128400T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2264875A JP2753129B2 (ja) 1990-10-02 1990-10-02 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69128400D1 true DE69128400D1 (de) 1998-01-22
DE69128400T2 DE69128400T2 (de) 1998-04-30

Family

ID=17409440

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128400T Expired - Lifetime DE69128400T2 (de) 1990-10-02 1991-10-02 Halbleiterspeicheranordnung

Country Status (5)

Country Link
US (1) US5418745A (de)
EP (1) EP0479274B1 (de)
JP (1) JP2753129B2 (de)
KR (1) KR950001426B1 (de)
DE (1) DE69128400T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5490112A (en) * 1993-02-05 1996-02-06 Micron Technology, Inc. Multi-port memory device with multiple sets of columns
JP3319637B2 (ja) * 1993-11-10 2002-09-03 松下電器産業株式会社 半導体記憶装置及びその制御方法
JP3251421B2 (ja) * 1994-04-11 2002-01-28 株式会社日立製作所 半導体集積回路
JPH08212132A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 記憶装置
KR100368132B1 (ko) 2000-03-27 2003-01-15 한국과학기술원 메모리 어드레싱 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194295A (ja) * 1984-10-16 1986-05-13 Fujitsu Ltd 半導体記憶装置
JPS62287497A (ja) * 1986-06-06 1987-12-14 Fujitsu Ltd 半導体記憶装置
KR960001106B1 (ko) * 1986-12-17 1996-01-18 가부시기가이샤 히다찌세이사꾸쇼 반도체 메모리
JP2591010B2 (ja) * 1988-01-29 1997-03-19 日本電気株式会社 シリアルアクセスメモリ装置
KR950003605B1 (ko) * 1990-04-27 1995-04-14 가부시키가이샤 도시바 반도체 기억장치
JP2592986B2 (ja) * 1990-09-29 1997-03-19 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
EP0479274A3 (en) 1993-07-21
JP2753129B2 (ja) 1998-05-18
KR930008840A (ko) 1993-05-22
EP0479274A2 (de) 1992-04-08
JPH04141888A (ja) 1992-05-15
DE69128400T2 (de) 1998-04-30
EP0479274B1 (de) 1997-12-10
US5418745A (en) 1995-05-23
KR950001426B1 (ko) 1995-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition