DE69128061D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69128061D1
DE69128061D1 DE69128061T DE69128061T DE69128061D1 DE 69128061 D1 DE69128061 D1 DE 69128061D1 DE 69128061 T DE69128061 T DE 69128061T DE 69128061 T DE69128061 T DE 69128061T DE 69128061 D1 DE69128061 D1 DE 69128061D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69128061T
Other languages
English (en)
Other versions
DE69128061T2 (de
Inventor
Toru Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69128061D1 publication Critical patent/DE69128061D1/de
Publication of DE69128061T2 publication Critical patent/DE69128061T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69128061T 1990-08-30 1991-08-29 Halbleiterspeicheranordnung Expired - Lifetime DE69128061T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22999390 1990-08-30

Publications (2)

Publication Number Publication Date
DE69128061D1 true DE69128061D1 (de) 1997-12-04
DE69128061T2 DE69128061T2 (de) 1998-03-26

Family

ID=16900925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128061T Expired - Lifetime DE69128061T2 (de) 1990-08-30 1991-08-29 Halbleiterspeicheranordnung

Country Status (3)

Country Link
US (1) US5243576A (de)
EP (1) EP0473421B1 (de)
DE (1) DE69128061T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2856598B2 (ja) * 1992-06-04 1999-02-10 三菱電機株式会社 ダイナミックランダムアクセスメモリ装置
US5446695A (en) * 1994-03-22 1995-08-29 International Business Machines Corporation Memory device with programmable self-refreshing and testing methods therefore
US5513148A (en) * 1994-12-01 1996-04-30 Micron Technology Inc. Synchronous NAND DRAM architecture
JP3489906B2 (ja) * 1995-04-18 2004-01-26 松下電器産業株式会社 半導体メモリ装置
KR100197562B1 (ko) * 1995-12-23 1999-06-15 윤종용 셀프 리프레쉬 주기를 조정할 수 있는 반도체 메모리장치
JPH10222994A (ja) * 1997-02-06 1998-08-21 Mitsubishi Electric Corp 半導体記憶装置の読み出し電圧制御装置
AU1075599A (en) * 1997-10-10 1999-05-03 Rambus Incorporated Dram core refresh with reduced spike current
JP3386705B2 (ja) * 1997-12-25 2003-03-17 株式会社東芝 半導体記憶装置およびそのバーストアドレスカウンタ
KR100331547B1 (ko) * 1999-06-01 2002-04-06 윤종용 레지스터의 저장값에 따라 리프레쉬 사이클을 조정하는 리프레쉬 제어 회로 및 이를 구비하는 동적 메모리 장치의 리프레쉬 방법
JP2001243766A (ja) * 2000-02-29 2001-09-07 Fujitsu Ltd 半導体記憶装置
JP3828335B2 (ja) * 2000-04-13 2006-10-04 本田技研工業株式会社 車両制御装置のための書き換えシステム
JP2003132677A (ja) * 2001-10-29 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
JP2003317473A (ja) * 2002-04-15 2003-11-07 Mitsubishi Electric Corp 半導体記憶装置
JP2006146992A (ja) * 2004-11-16 2006-06-08 Elpida Memory Inc 半導体メモリ装置
KR20130049656A (ko) * 2011-11-04 2013-05-14 에스케이하이닉스 주식회사 셀프리프레쉬펄스 생성회로
CN106373601B (zh) * 2016-10-19 2019-02-19 成都益睿信科技有限公司 一种自刷新的脉冲发生器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59162690A (ja) * 1983-03-04 1984-09-13 Nec Corp 擬似スタテイツクメモリ
US4631701A (en) * 1983-10-31 1986-12-23 Ncr Corporation Dynamic random access memory refresh control system
JPS61222091A (ja) * 1985-03-12 1986-10-02 Fujitsu Ltd ダイナミツクメモリのリフレツシユ方式
JPH087995B2 (ja) * 1985-08-16 1996-01-29 富士通株式会社 ダイナミツク半導体記憶装置のリフレツシユ方法および装置
JPS6432489A (en) * 1987-07-27 1989-02-02 Matsushita Electronics Corp Memory device
JPH07107793B2 (ja) * 1987-11-10 1995-11-15 株式会社東芝 仮想型スタティック半導体記憶装置及びこの記憶装置を用いたシステム
GB8801472D0 (en) * 1988-01-22 1988-02-24 Int Computers Ltd Dynamic random-access memory
JP2617779B2 (ja) * 1988-08-31 1997-06-04 三菱電機株式会社 半導体メモリ装置
JPH0283893A (ja) * 1988-09-21 1990-03-23 Nec Ic Microcomput Syst Ltd 半導体記憶装置のリフレッシュ回路

Also Published As

Publication number Publication date
EP0473421A3 (en) 1992-05-06
EP0473421B1 (de) 1997-10-29
DE69128061T2 (de) 1998-03-26
US5243576A (en) 1993-09-07
EP0473421A2 (de) 1992-03-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP