DE69119800D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69119800D1
DE69119800D1 DE69119800T DE69119800T DE69119800D1 DE 69119800 D1 DE69119800 D1 DE 69119800D1 DE 69119800 T DE69119800 T DE 69119800T DE 69119800 T DE69119800 T DE 69119800T DE 69119800 D1 DE69119800 D1 DE 69119800D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119800T
Other languages
English (en)
Other versions
DE69119800T2 (de
Inventor
Ikuo Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2040666A external-priority patent/JP3070060B2/ja
Priority claimed from JP2290162A external-priority patent/JP2890797B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69119800D1 publication Critical patent/DE69119800D1/de
Application granted granted Critical
Publication of DE69119800T2 publication Critical patent/DE69119800T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
DE69119800T 1990-02-21 1991-02-20 Halbleiterspeicher Expired - Fee Related DE69119800T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2040666A JP3070060B2 (ja) 1990-02-21 1990-02-21 半導体メモリ
JP2290162A JP2890797B2 (ja) 1990-10-26 1990-10-26 半導体メモリ

Publications (2)

Publication Number Publication Date
DE69119800D1 true DE69119800D1 (de) 1996-07-04
DE69119800T2 DE69119800T2 (de) 1996-10-02

Family

ID=26380157

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119800T Expired - Fee Related DE69119800T2 (de) 1990-02-21 1991-02-20 Halbleiterspeicher

Country Status (4)

Country Link
US (2) US5350933A (de)
EP (1) EP0443549B1 (de)
KR (1) KR100221439B1 (de)
DE (1) DE69119800T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
DE69229014T2 (de) * 1991-03-01 1999-08-26 Fujitsu Ltd Halbleiterspeichereinrichtung mit Dünnfilmtransistor und seine Herstellungsmethode
JP2894391B2 (ja) * 1991-09-20 1999-05-24 三菱電機株式会社 薄膜トランジスタおよびその製造方法
JP3121676B2 (ja) * 1992-05-29 2001-01-09 株式会社東芝 薄膜トランジスタ及び薄膜トランジスタを用いたスタティックｒａｍ
JP2518133B2 (ja) * 1993-02-12 1996-07-24 日本電気株式会社 スタティック型半導体記憶装置
JP2684975B2 (ja) * 1993-12-03 1997-12-03 日本電気株式会社 ボトムゲート型薄膜ｍｏｓトランジスタおよびその製造方法
JPH07235645A (ja) * 1993-12-29 1995-09-05 Mitsubishi Electric Corp スタティック型半導体記憶装置およびその製造方法
JPH08130254A (ja) * 1994-10-31 1996-05-21 Mitsubishi Electric Corp 半導体記憶装置
JP2689923B2 (ja) * 1994-11-11 1997-12-10 日本電気株式会社 半導体装置およびその製造方法
US5451534A (en) * 1994-12-14 1995-09-19 United Microelectronics Corporation Method of making single layer thin film transistor static random access memory cell
US5640342A (en) * 1995-11-20 1997-06-17 Micron Technology, Inc. Structure for cross coupled thin film transistors and static random access memory cell
JP4180659B2 (ja) * 1996-03-28 2008-11-12 インテル・コーポレーション 垂直スタック交差を有するメモリ・セル設計
US5831899A (en) * 1997-04-07 1998-11-03 Integrated Device Technology, Inc. Local interconnect structure and process for six-transistor SRAM cell
US7027424B1 (en) 2000-05-24 2006-04-11 Vtech Communications, Ltd. Method for avoiding interference in a digital communication system
US6576962B2 (en) 2000-06-21 2003-06-10 Bae Systems Information And Electronics Systems Integration, Inc. CMOS SRAM cell with prescribed power-on data state
AU2001280467A1 (en) * 2000-07-25 2002-02-05 Bae Systems Cmos sram cell with prescribed power-on data state
JP2003023112A (ja) * 2001-07-09 2003-01-24 Hitachi Ltd 半導体集積回路装置
US7266141B2 (en) * 2002-07-19 2007-09-04 Vtech Communications, Ltd Hybrid frame structure for wireless communications
CN100351994C (zh) * 2002-12-19 2007-11-28 国际商业机器公司 使用反向FinFET薄膜晶体管的FinFET SRAM单元
US7693488B2 (en) * 2004-09-30 2010-04-06 Vtech Telecommunications Limited System and method for asymmetric enhanced mode operation in a digital communication system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4724530A (en) * 1978-10-03 1988-02-09 Rca Corporation Five transistor CMOS memory cell including diodes
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
JPH0636423B2 (ja) * 1982-06-22 1994-05-11 株式会社日立製作所 三次元構造半導体装置
US5132771A (en) * 1985-12-27 1992-07-21 Hitachi, Ltd. Semiconductor memory device having flip-flop circuits
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置
JPH01152662A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd 半導体記憶装置
JPH0256966A (ja) * 1988-08-22 1990-02-26 Seiko Epson Corp 半導体記憶装置
US5083190A (en) * 1989-09-05 1992-01-21 Motorola, Inc. Shared gate CMOS transistor
JPH03218667A (ja) * 1989-11-01 1991-09-26 Hitachi Ltd 半導体記憶装置
US5095347A (en) * 1990-08-01 1992-03-10 Motorola, Inc. Plural transistor silicon on insulator structure with shared electrodes
JP2894391B2 (ja) * 1991-09-20 1999-05-24 三菱電機株式会社 薄膜トランジスタおよびその製造方法

Also Published As

Publication number Publication date
US5350933A (en) 1994-09-27
DE69119800T2 (de) 1996-10-02
EP0443549B1 (de) 1996-05-29
KR100221439B1 (ko) 1999-09-15
EP0443549A3 (en) 1991-10-30
EP0443549A2 (de) 1991-08-28
US5471071A (en) 1995-11-28
KR920000145A (ko) 1992-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee