DE69119920D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69119920D1
DE69119920D1 DE69119920T DE69119920T DE69119920D1 DE 69119920 D1 DE69119920 D1 DE 69119920D1 DE 69119920 T DE69119920 T DE 69119920T DE 69119920 T DE69119920 T DE 69119920T DE 69119920 D1 DE69119920 D1 DE 69119920D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119920T
Other languages
English (en)
Other versions
DE69119920T2 (de
Inventor
Teruo Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69119920D1 publication Critical patent/DE69119920D1/de
Publication of DE69119920T2 publication Critical patent/DE69119920T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
DE69119920T 1990-02-09 1991-02-07 Halbleiterspeicher Expired - Fee Related DE69119920T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2030918A JPH03234059A (ja) 1990-02-09 1990-02-09 半導体メモリ

Publications (2)

Publication Number Publication Date
DE69119920D1 true DE69119920D1 (de) 1996-07-11
DE69119920T2 DE69119920T2 (de) 1996-10-24

Family

ID=12317078

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119920T Expired - Fee Related DE69119920T2 (de) 1990-02-09 1991-02-07 Halbleiterspeicher

Country Status (5)

Country Link
US (1) US5225693A (de)
EP (1) EP0441379B1 (de)
JP (1) JPH03234059A (de)
KR (1) KR960016248B1 (de)
DE (1) DE69119920T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1154488B1 (de) * 1992-09-04 2003-05-07 Mitsubishi Denki Kabushiki Kaisha Halbleiterspeicherbauelement
JP3520659B2 (ja) * 1995-03-30 2004-04-19 セイコーエプソン株式会社 複数の電源電圧で駆動されるゲートアレイ及びそれを用いた電子機器
JP3432963B2 (ja) * 1995-06-15 2003-08-04 沖電気工業株式会社 半導体集積回路
JP3400894B2 (ja) * 1995-07-14 2003-04-28 三菱電機株式会社 スタティック型半導体記憶装置
KR100230740B1 (ko) * 1996-06-29 1999-11-15 김영환 에스램 및 그의 제조방법
US5804477A (en) * 1997-02-24 1998-09-08 Integrated Device Technology, Inc. Method of making a 6-transistor compact static ram cell
JP3179368B2 (ja) * 1997-05-30 2001-06-25 広島日本電気株式会社 スタティック型メモリセル
TW484117B (en) * 1999-11-08 2002-04-21 Semiconductor Energy Lab Electronic device
ATE493167T1 (de) * 2005-12-09 2011-01-15 Boston Scient Scimed Inc Herzstimulationssystem

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644194A (en) * 1979-09-19 1981-04-23 Toshiba Corp Memory device
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
DE3477312D1 (de) * 1983-07-09 1989-04-20 Fujitsu Ltd Masterslice semiconductor device
JPH0638468B2 (ja) * 1984-12-18 1994-05-18 三洋電機株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
EP0441379A2 (de) 1991-08-14
EP0441379A3 (en) 1991-10-16
DE69119920T2 (de) 1996-10-24
JPH03234059A (ja) 1991-10-18
EP0441379B1 (de) 1996-06-05
US5225693A (en) 1993-07-06
KR960016248B1 (ko) 1996-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee