DE69223857D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69223857D1
DE69223857D1 DE69223857T DE69223857T DE69223857D1 DE 69223857 D1 DE69223857 D1 DE 69223857D1 DE 69223857 T DE69223857 T DE 69223857T DE 69223857 T DE69223857 T DE 69223857T DE 69223857 D1 DE69223857 D1 DE 69223857D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69223857T
Other languages
English (en)
Other versions
DE69223857T2 (de
Inventor
Yasuharu Hoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69223857D1 publication Critical patent/DE69223857D1/de
Application granted granted Critical
Publication of DE69223857T2 publication Critical patent/DE69223857T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
DE69223857T 1991-06-27 1992-06-25 Halbleiterspeicher Expired - Fee Related DE69223857T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03183104A JP3084801B2 (ja) 1991-06-27 1991-06-27 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE69223857D1 true DE69223857D1 (de) 1998-02-12
DE69223857T2 DE69223857T2 (de) 1998-06-18

Family

ID=16129848

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69223857T Expired - Fee Related DE69223857T2 (de) 1991-06-27 1992-06-25 Halbleiterspeicher

Country Status (5)

Country Link
US (1) US5317539A (de)
EP (1) EP0520450B1 (de)
JP (1) JP3084801B2 (de)
KR (1) KR960013840B1 (de)
DE (1) DE69223857T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3277108B2 (ja) * 1995-10-31 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション Dramアレイ
KR100434552B1 (ko) * 1997-08-21 2004-07-16 삼성전자주식회사 백금/탄소분말과그제조방법,및이를이용하여형성된촉매층을갖는연료전지
JP4000001B2 (ja) * 2002-04-22 2007-10-31 松下電器産業株式会社 クロック制御装置およびクロック制御方法
JP2006164183A (ja) * 2004-12-10 2006-06-22 Renesas Technology Corp 半導体信号処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0321847B1 (de) * 1987-12-21 1994-06-29 Kabushiki Kaisha Toshiba Halbleiterspeicher, der fähig zur Verbesserung der Datenwiedereinschreibgeschwindigkeit ist
JPH0770212B2 (ja) * 1988-07-19 1995-07-31 日本電気株式会社 半導体メモリ回路
JPH0283892A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体記憶装置
DE69025284T2 (de) * 1989-12-01 1996-06-27 Matsushita Electronics Corp Halbleiterspeicher dynamischen Typs

Also Published As

Publication number Publication date
EP0520450A3 (en) 1995-03-22
KR930001421A (ko) 1993-01-16
JP3084801B2 (ja) 2000-09-04
US5317539A (en) 1994-05-31
EP0520450A2 (de) 1992-12-30
DE69223857T2 (de) 1998-06-18
KR960013840B1 (ko) 1996-10-10
EP0520450B1 (de) 1998-01-07
JPH056655A (ja) 1993-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee