DE69215166D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69215166D1
DE69215166D1 DE69215166T DE69215166T DE69215166D1 DE 69215166 D1 DE69215166 D1 DE 69215166D1 DE 69215166 T DE69215166 T DE 69215166T DE 69215166 T DE69215166 T DE 69215166T DE 69215166 D1 DE69215166 D1 DE 69215166D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215166T
Other languages
English (en)
Other versions
DE69215166T2 (de
Inventor
Isao Fukushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69215166D1 publication Critical patent/DE69215166D1/de
Application granted granted Critical
Publication of DE69215166T2 publication Critical patent/DE69215166T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/18—Applying electric currents by contact electrodes
    • A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/325—Applying electric currents by contact electrodes alternating or intermittent currents for iontophoresis, i.e. transfer of media in ionic state by an electromotoric force into the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Animal Behavior & Ethology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biomedical Technology (AREA)
  • Static Random-Access Memory (AREA)
DE69215166T 1991-03-20 1992-03-18 Halbleiterspeicher Expired - Fee Related DE69215166T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3057475A JP2569986B2 (ja) 1991-03-20 1991-03-20 半導体記憶装置
PCT/JP1992/000327 WO1992016945A1 (en) 1991-03-20 1992-03-18 Semiconductor memory

Publications (2)

Publication Number Publication Date
DE69215166D1 true DE69215166D1 (de) 1996-12-19
DE69215166T2 DE69215166T2 (de) 1997-06-05

Family

ID=13056731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215166T Expired - Fee Related DE69215166T2 (de) 1991-03-20 1992-03-18 Halbleiterspeicher

Country Status (6)

Country Link
US (1) US5315556A (de)
EP (1) EP0530374B1 (de)
JP (1) JP2569986B2 (de)
KR (1) KR950014909B1 (de)
DE (1) DE69215166T2 (de)
WO (1) WO1992016945A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5535166A (en) * 1994-07-25 1996-07-09 Microunity Systems Engineering, Inc. Circuit for isolating and driving interconnect lines
KR100541367B1 (ko) * 2003-07-15 2006-01-11 주식회사 하이닉스반도체 오버드라이빙 구조를 가진 반도체 메모리 소자

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078261A (en) * 1976-01-02 1978-03-07 Motorola, Inc. Sense/write circuits for bipolar random access memory
JP2526890B2 (ja) * 1987-03-20 1996-08-21 株式会社日立製作所 半導体メモリ装置
JP2593894B2 (ja) * 1987-11-16 1997-03-26 富士通株式会社 半導体記憶装置
US4864540A (en) * 1988-02-11 1989-09-05 Digital Equipment Corporation Bipolar ram having no write recovery time
JPH023177A (ja) * 1988-03-11 1990-01-08 Hitachi Ltd 半導体集積回路
JPH0229996A (ja) * 1988-07-18 1990-01-31 Mitsubishi Electric Corp 半導体記憶装置
JPH03104090A (ja) * 1989-09-18 1991-05-01 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JP2569986B2 (ja) 1997-01-08
DE69215166T2 (de) 1997-06-05
EP0530374A1 (de) 1993-03-10
JPH05144274A (ja) 1993-06-11
US5315556A (en) 1994-05-24
WO1992016945A1 (en) 1992-10-01
KR930700949A (ko) 1993-03-16
EP0530374A4 (en) 1993-09-22
KR950014909B1 (ko) 1995-12-16
EP0530374B1 (de) 1996-11-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee