DE69129492D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE69129492D1
DE69129492D1 DE69129492T DE69129492T DE69129492D1 DE 69129492 D1 DE69129492 D1 DE 69129492D1 DE 69129492 T DE69129492 T DE 69129492T DE 69129492 T DE69129492 T DE 69129492T DE 69129492 D1 DE69129492 D1 DE 69129492D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69129492T
Other languages
English (en)
Other versions
DE69129492T2 (de
Inventor
Naoto Tomita
Junichi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69129492D1 publication Critical patent/DE69129492D1/de
Application granted granted Critical
Publication of DE69129492T2 publication Critical patent/DE69129492T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
DE69129492T 1990-10-02 1991-10-02 Halbleiterspeicher Expired - Lifetime DE69129492T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP26410890 1990-10-02
PCT/JP1991/001323 WO1992006475A1 (en) 1990-10-02 1991-10-02 Semiconductor memory

Publications (2)

Publication Number Publication Date
DE69129492D1 true DE69129492D1 (de) 1998-07-02
DE69129492T2 DE69129492T2 (de) 1998-11-05

Family

ID=17398616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69129492T Expired - Lifetime DE69129492T2 (de) 1990-10-02 1991-10-02 Halbleiterspeicher

Country Status (6)

Country Link
US (2) US5430678A (de)
EP (1) EP0503100B1 (de)
JP (1) JP2619170B2 (de)
KR (2) KR960001307B1 (de)
DE (1) DE69129492T2 (de)
WO (1) WO1992006475A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5672966A (en) * 1992-07-23 1997-09-30 Xilinx, Inc. High speed post-programming net packing method
JP3263259B2 (ja) * 1994-10-04 2002-03-04 株式会社東芝 半導体記憶装置
JP3865828B2 (ja) 1995-11-28 2007-01-10 株式会社ルネサステクノロジ 半導体記憶装置
JPH09180492A (ja) * 1995-12-26 1997-07-11 Sony Corp 半導体記憶装置
US5659511A (en) * 1996-05-06 1997-08-19 United Microelectronics Corporation Method for measuring the current leakage of a dynamic random access memory capacitive junction
US5923601A (en) * 1996-09-30 1999-07-13 Advanced Micro Devices, Inc. Memory array sense amplifier test and characterization
US5764577A (en) * 1997-04-07 1998-06-09 Motorola, Inc. Fusleless memory repair system and method of operation
JPH10302497A (ja) * 1997-04-28 1998-11-13 Fujitsu Ltd 不良アドレスの代替方法、半導体記憶装置、及び、半導体装置
JP3586591B2 (ja) * 1999-07-01 2004-11-10 シャープ株式会社 冗長機能を有する不揮発性半導体メモリ装置のための不良アドレスデータ記憶回路および不良アドレスデータ書き込み方法
DE10103060B4 (de) * 2000-01-26 2006-06-08 Infineon Technologies Ag Verfahren zum Testen einer ein Floating-Gate aufweisenden Speicherzelle und Anordnung zur Durchführung dieses Verfahrens
JP4727785B2 (ja) * 2000-01-26 2011-07-20 富士通セミコンダクター株式会社 半導体記憶装置及び半導体記憶装置のワード線欠陥検出方法
US6683467B1 (en) * 2000-09-29 2004-01-27 Intel Corporation Method and apparatus for providing rotational burn-in stress testing
JP4007823B2 (ja) * 2002-02-21 2007-11-14 株式会社ルネサステクノロジ 半導体記憶装置
JP4805733B2 (ja) * 2006-06-21 2011-11-02 株式会社東芝 半導体記憶装置及びそのテスト方法
US7679978B1 (en) * 2007-07-11 2010-03-16 Sun Microsystems, Inc. Scheme for screening weak memory cell
US7872902B2 (en) * 2008-08-18 2011-01-18 Qimonda Ag Integrated circuit with bit lines positioned in different planes
US7881134B2 (en) * 2008-11-17 2011-02-01 Micron Technology, Inc. Replacing defective columns of memory cells in response to external addresses
US9484114B1 (en) * 2015-07-29 2016-11-01 Sandisk Technologies Llc Decoding data using bit line defect information

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587638A (en) * 1983-07-13 1986-05-06 Micro-Computer Engineering Corporation Semiconductor memory device
US4796233A (en) * 1984-10-19 1989-01-03 Fujitsu Limited Bipolar-transistor type semiconductor memory device having redundancy configuration
JPH051040Y2 (de) * 1985-04-09 1993-01-12
JPS61289600A (ja) * 1985-06-17 1986-12-19 Fujitsu Ltd 半導体記憶装置
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
JPS632351A (ja) * 1986-06-20 1988-01-07 Sharp Corp 半導体装置
JPS6381700A (ja) * 1986-09-26 1988-04-12 Hitachi Ltd 半導体記憶装置
JP2603206B2 (ja) * 1987-03-16 1997-04-23 シーメンス、アクチエンゲゼルシヤフト 多段集積デコーダ装置
JPS63244494A (ja) * 1987-03-31 1988-10-11 Toshiba Corp 半導体記憶装置
JP2587973B2 (ja) * 1987-07-13 1997-03-05 日本電信電話株式会社 冗長構成半導体メモリ
JP2579792B2 (ja) * 1987-08-21 1997-02-12 日本電信電話株式会社 冗長構成半導体メモリ
FR2622019B1 (fr) * 1987-10-19 1990-02-09 Thomson Semiconducteurs Dispositif de test structurel d'un circuit integre
JPH01113999A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 不揮発性メモリのストレステスト回路
US4999812A (en) * 1988-11-23 1991-03-12 National Semiconductor Corp. Architecture for a flash erase EEPROM memory
JPH0322300A (ja) * 1989-06-16 1991-01-30 Matsushita Electron Corp 半導体記憶装置
JP2659436B2 (ja) * 1989-08-25 1997-09-30 富士通株式会社 半導体記憶装置
JP3384409B2 (ja) * 1989-11-08 2003-03-10 富士通株式会社 書換え可能な不揮発性半導体記憶装置及びその制御方法
KR920009059B1 (ko) * 1989-12-29 1992-10-13 삼성전자 주식회사 반도체 메모리 장치의 병렬 테스트 방법

Also Published As

Publication number Publication date
US5432745A (en) 1995-07-11
US5430678A (en) 1995-07-04
DE69129492T2 (de) 1998-11-05
EP0503100A4 (de) 1994-04-20
JP2619170B2 (ja) 1997-06-11
WO1992006475A1 (en) 1992-04-16
EP0503100A1 (de) 1992-09-16
KR960007363Y1 (ko) 1996-08-28
EP0503100B1 (de) 1998-05-27
KR960001307B1 (ko) 1996-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition