DE69031276T2
(de)
*
|
1989-06-12 |
1998-01-15 |
Toshiba Kawasaki Kk |
Halbleiterspeicheranordnung
|
US6002614A
(en)
*
|
1991-02-08 |
1999-12-14 |
Btg International Inc. |
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
|
US5218569A
(en)
|
1991-02-08 |
1993-06-08 |
Banks Gerald J |
Electrically alterable non-volatile memory with n-bits per memory cell
|
JP3160316B2
(ja)
*
|
1991-07-25 |
2001-04-25 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US6222762B1
(en)
*
|
1992-01-14 |
2001-04-24 |
Sandisk Corporation |
Multi-state memory
|
US5657332A
(en)
*
|
1992-05-20 |
1997-08-12 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
JP2904645B2
(ja)
*
|
1992-05-28 |
1999-06-14 |
株式会社東芝 |
不揮発性半導体メモリ
|
US5450426A
(en)
*
|
1992-12-18 |
1995-09-12 |
Unisys Corporation |
Continuous error detection using duplicate core memory cells
|
KR0169267B1
(ko)
*
|
1993-09-21 |
1999-02-01 |
사토 후미오 |
불휘발성 반도체 기억장치
|
US5828601A
(en)
*
|
1993-12-01 |
1998-10-27 |
Advanced Micro Devices, Inc. |
Programmed reference
|
JP3563452B2
(ja)
*
|
1994-08-10 |
2004-09-08 |
株式会社東芝 |
セル閾値分布検知回路およびセル閾値分布検知方法
|
JP3337578B2
(ja)
*
|
1994-11-29 |
2002-10-21 |
三菱電機システムエル・エス・アイ・デザイン株式会社 |
半導体装置およびその製造方法
|
US5537358A
(en)
*
|
1994-12-06 |
1996-07-16 |
National Semiconductor Corporation |
Flash memory having adaptive sensing and method
|
FR2728380A1
(fr)
*
|
1994-12-20 |
1996-06-21 |
Sgs Thomson Microelectronics |
Procede d'ecriture de donnees dans une memoire et memoire electriquement programmable correspondante
|
JPH08180698A
(ja)
*
|
1994-12-22 |
1996-07-12 |
Toshiba Corp |
半導体記憶装置
|
US6292424B1
(en)
|
1995-01-20 |
2001-09-18 |
Kabushiki Kaisha Toshiba |
DRAM having a power supply voltage lowering circuit
|
JP3274306B2
(ja)
|
1995-01-20 |
2002-04-15 |
株式会社東芝 |
半導体集積回路装置
|
WO1996024936A1
(en)
*
|
1995-02-10 |
1996-08-15 |
Micron Quantum Devices, Inc. |
Fast-sensing amplifier for flash memory
|
US6108237A
(en)
|
1997-07-17 |
2000-08-22 |
Micron Technology, Inc. |
Fast-sensing amplifier for flash memory
|
US6353554B1
(en)
|
1995-02-27 |
2002-03-05 |
Btg International Inc. |
Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
|
US5511164A
(en)
|
1995-03-01 |
1996-04-23 |
Unisys Corporation |
Method and apparatus for determining the source and nature of an error within a computer system
|
KR100197554B1
(ko)
*
|
1995-09-30 |
1999-06-15 |
윤종용 |
반도체 메모리장치의 고속테스트 방법
|
US5726934A
(en)
*
|
1996-04-09 |
1998-03-10 |
Information Storage Devices, Inc. |
Method and apparatus for analog reading values stored in floating gate structures
|
JP3404712B2
(ja)
*
|
1996-05-15 |
2003-05-12 |
株式会社東芝 |
不揮発性半導体記憶装置及びその書き込み方法
|
EP0907954B1
(de)
*
|
1996-06-24 |
2000-06-07 |
Advanced Micro Devices, Inc. |
Verfahren für einen merhfachen, bits pro zelle flash eeprom, speicher mit seitenprogrammierungsmodus und leseverfahren
|
US5731734A
(en)
*
|
1996-10-07 |
1998-03-24 |
Atmel Corporation |
Zero power fuse circuit
|
US5764568A
(en)
|
1996-10-24 |
1998-06-09 |
Micron Quantum Devices, Inc. |
Method for performing analog over-program and under-program detection for a multistate memory cell
|
US5768287A
(en)
|
1996-10-24 |
1998-06-16 |
Micron Quantum Devices, Inc. |
Apparatus and method for programming multistate memory device
|
US5790453A
(en)
*
|
1996-10-24 |
1998-08-04 |
Micron Quantum Devices, Inc. |
Apparatus and method for reading state of multistate non-volatile memory cells
|
US5771346A
(en)
|
1996-10-24 |
1998-06-23 |
Micron Quantum Devices, Inc. |
Apparatus and method for detecting over-programming condition in multistate memory device
|
US6078518A
(en)
*
|
1998-02-25 |
2000-06-20 |
Micron Technology, Inc. |
Apparatus and method for reading state of multistate non-volatile memory cells
|
US5953745A
(en)
*
|
1996-11-27 |
1999-09-14 |
International Business Machines Corporation |
Redundant memory array
|
TW367503B
(en)
*
|
1996-11-29 |
1999-08-21 |
Sanyo Electric Co |
Non-volatile semiconductor device
|
KR100240418B1
(ko)
*
|
1996-12-31 |
2000-03-02 |
윤종용 |
반도체 독출 전용 메모리 및 그의 독출 방법
|
JP3532725B2
(ja)
*
|
1997-02-27 |
2004-05-31 |
株式会社東芝 |
半導体集積回路
|
JP3001454B2
(ja)
*
|
1997-04-23 |
2000-01-24 |
日本電気アイシーマイコンシステム株式会社 |
半導体装置
|
JPH10308100A
(ja)
*
|
1997-05-06 |
1998-11-17 |
Mitsubishi Electric Corp |
半導体記憶装置
|
KR100275132B1
(ko)
*
|
1997-06-24 |
2000-12-15 |
김영환 |
전류미러형 감지 증폭기
|
JP3730373B2
(ja)
*
|
1997-09-02 |
2006-01-05 |
株式会社東芝 |
半導体記憶装置
|
US5909449A
(en)
*
|
1997-09-08 |
1999-06-01 |
Invox Technology |
Multibit-per-cell non-volatile memory with error detection and correction
|
EP0936620A1
(de)
*
|
1998-02-13 |
1999-08-18 |
STMicroelectronics S.r.l. |
Bitleitungspolarisationssystem für Leseverstärker eines nichtflüchtiges Speichers mit erweitertem Versorgungsspannungsbereich
|
DE69834313D1
(de)
*
|
1998-02-13 |
2006-06-01 |
St Microelectronics Srl |
Verbesserter Leseverstärker für nichtflüchtigen Speicher mit erweitertem Versorgungsspannungsbereich
|
US6205515B1
(en)
*
|
1998-03-16 |
2001-03-20 |
Winbond Electronic Corporation |
Column redundancy circuitry with reduced time delay
|
JP2000090682A
(ja)
*
|
1998-09-10 |
2000-03-31 |
Toshiba Corp |
半導体記憶装置
|
US6567302B2
(en)
|
1998-12-29 |
2003-05-20 |
Micron Technology, Inc. |
Method and apparatus for programming multi-state cells in a memory device
|
DE19913570C2
(de)
*
|
1999-03-25 |
2001-03-08 |
Siemens Ag |
Betriebsverfahren für einen integrierten Speicher und integrierter Speicher
|
JP3620992B2
(ja)
*
|
1999-04-23 |
2005-02-16 |
株式会社 沖マイクロデザイン |
半導体記憶装置
|
JP4002710B2
(ja)
*
|
2000-01-31 |
2007-11-07 |
株式会社ルネサステクノロジ |
不揮発性半導体記憶装置
|
JP4077140B2
(ja)
*
|
2000-06-30 |
2008-04-16 |
富士通株式会社 |
半導体記憶装置
|
JP4250325B2
(ja)
*
|
2000-11-01 |
2009-04-08 |
株式会社東芝 |
半導体記憶装置
|
US6563743B2
(en)
*
|
2000-11-27 |
2003-05-13 |
Hitachi, Ltd. |
Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy
|
US7177181B1
(en)
*
|
2001-03-21 |
2007-02-13 |
Sandisk 3D Llc |
Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
|
US6396740B1
(en)
*
|
2001-08-10 |
2002-05-28 |
Taiwan Semiconductor Manufacturing Company, Ltd |
Reference cell circuit for split gate flash memory
|
KR100454145B1
(ko)
*
|
2001-11-23 |
2004-10-26 |
주식회사 하이닉스반도체 |
플래쉬 메모리 장치
|
DE10162260B4
(de)
*
|
2001-12-18 |
2006-04-06 |
Infineon Technologies Ag |
Integrierter Speicher mit einer Vorladeschaltung zur Vorladung einer Bitleitung
|
US6952375B2
(en)
*
|
2001-12-24 |
2005-10-04 |
Intel Corporation |
Self-timed voltage-subtraction sneak current cancellation method and apparatus
|
US6621739B2
(en)
*
|
2002-01-18 |
2003-09-16 |
Sandisk Corporation |
Reducing the effects of noise in non-volatile memories through multiple reads
|
US7120068B2
(en)
*
|
2002-07-29 |
2006-10-10 |
Micron Technology, Inc. |
Column/row redundancy architecture using latches programmed from a look up table
|
US6903987B2
(en)
*
|
2002-08-01 |
2005-06-07 |
T-Ram, Inc. |
Single data line sensing scheme for TCCT-based memory cells
|
US7324394B1
(en)
|
2002-08-01 |
2008-01-29 |
T-Ram Semiconductor, Inc. |
Single data line sensing scheme for TCCT-based memory cells
|
WO2004095470A1
(ja)
*
|
2003-04-24 |
2004-11-04 |
Fujitsu Limited |
不揮発性半導体メモリ
|
US6845052B1
(en)
*
|
2003-05-30 |
2005-01-18 |
Macronix International Co., Ltd. |
Dual reference cell sensing scheme for non-volatile memory
|
US6839279B2
(en)
*
|
2003-06-06 |
2005-01-04 |
Fujitsu Limited |
Nonvolatile semiconductor memory device
|
ITMI20031619A1
(it)
*
|
2003-08-06 |
2005-02-07 |
St Microelectronics Srl |
Amplificatore di rilevamento perfezionato.
|
JP4133692B2
(ja)
*
|
2003-08-29 |
2008-08-13 |
メンター・グラフィクス・コーポレーション |
不揮発性半導体記憶装置
|
US7012835B2
(en)
*
|
2003-10-03 |
2006-03-14 |
Sandisk Corporation |
Flash memory data correction and scrub techniques
|
US7173852B2
(en)
*
|
2003-10-03 |
2007-02-06 |
Sandisk Corporation |
Corrected data storage and handling methods
|
JP2005141827A
(ja)
*
|
2003-11-06 |
2005-06-02 |
Sanyo Electric Co Ltd |
半導体記憶装置およびその不揮発性メモリ検証方法、マイクロコンピュータおよびその不揮発性メモリ制御方法
|
EP1717816B1
(de)
*
|
2004-02-19 |
2008-12-24 |
Spansion LLc |
Strom-spannungs-umsetzungsschaltung und steuerverfahren dafür
|
US6972994B2
(en)
*
|
2004-03-09 |
2005-12-06 |
Silicon Storage Technology, Inc. |
Circuit and a method to screen for defects in an addressable line in a non-volatile memory
|
US7221605B2
(en)
*
|
2004-08-31 |
2007-05-22 |
Micron Technology, Inc. |
Switched capacitor DRAM sense amplifier with immunity to mismatch and offsets
|
US7236415B2
(en)
*
|
2004-09-01 |
2007-06-26 |
Micron Technology, Inc. |
Sample and hold memory sense amplifier
|
US7315916B2
(en)
|
2004-12-16 |
2008-01-01 |
Sandisk Corporation |
Scratch pad block
|
US7395404B2
(en)
*
|
2004-12-16 |
2008-07-01 |
Sandisk Corporation |
Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
|
KR100582392B1
(ko)
*
|
2004-12-28 |
2006-05-22 |
주식회사 하이닉스반도체 |
반도체메모리소자
|
ITMI20042538A1
(it)
*
|
2004-12-29 |
2005-03-29 |
Atmel Corp |
Metodo e sistema per la riduzione del soft-writing in una memoria flash a livelli multipli
|
US7187585B2
(en)
*
|
2005-04-05 |
2007-03-06 |
Sandisk Corporation |
Read operation for non-volatile storage that includes compensation for coupling
|
EP2660867A3
(de)
*
|
2005-07-04 |
2014-02-12 |
National University Corporation Tohoku Unversity |
Testschaltung, Wafer, Messvorrichtung, Bauelementeherstellungsverfahren und Display-Einrichtung
|
KR100769796B1
(ko)
*
|
2006-05-12 |
2007-10-25 |
주식회사 하이닉스반도체 |
저전압용 롬
|
US7886204B2
(en)
*
|
2006-09-27 |
2011-02-08 |
Sandisk Corporation |
Methods of cell population distribution assisted read margining
|
US7716538B2
(en)
*
|
2006-09-27 |
2010-05-11 |
Sandisk Corporation |
Memory with cell population distribution assisted read margining
|
US7477547B2
(en)
*
|
2007-03-28 |
2009-01-13 |
Sandisk Corporation |
Flash memory refresh techniques triggered by controlled scrub data reads
|
US7573773B2
(en)
*
|
2007-03-28 |
2009-08-11 |
Sandisk Corporation |
Flash memory with data refresh triggered by controlled scrub data reads
|
US20090046532A1
(en)
*
|
2007-08-17 |
2009-02-19 |
Infineon Technologies Ag |
Supply Voltage for Memory Device
|
JP5060435B2
(ja)
*
|
2008-09-04 |
2012-10-31 |
株式会社東芝 |
半導体記憶装置
|
US9159452B2
(en)
|
2008-11-14 |
2015-10-13 |
Micron Technology, Inc. |
Automatic word line leakage measurement circuitry
|
US8416624B2
(en)
|
2010-05-21 |
2013-04-09 |
SanDisk Technologies, Inc. |
Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
|
KR101147295B1
(ko)
*
|
2010-10-28 |
2012-05-18 |
에스케이하이닉스 주식회사 |
반도체 장치의 리시버 회로 및 신호 수신방법
|
US8588007B2
(en)
|
2011-02-28 |
2013-11-19 |
Micron Technology, Inc. |
Leakage measurement systems
|
US8634264B2
(en)
|
2011-10-26 |
2014-01-21 |
Micron Technology, Inc. |
Apparatuses, integrated circuits, and methods for measuring leakage current
|
US8687421B2
(en)
|
2011-11-21 |
2014-04-01 |
Sandisk Technologies Inc. |
Scrub techniques for use with dynamic read
|
US9288161B2
(en)
*
|
2011-12-05 |
2016-03-15 |
International Business Machines Corporation |
Verifying the functionality of an integrated circuit
|
US9275674B2
(en)
*
|
2014-03-11 |
2016-03-01 |
Marvell International Ltd. |
Spindle motor for hard disk drive and method of fabrication thereof
|
US9230689B2
(en)
|
2014-03-17 |
2016-01-05 |
Sandisk Technologies Inc. |
Finding read disturbs on non-volatile memories
|
CN104112475B
(zh)
*
|
2014-07-21 |
2017-02-15 |
中国人民解放军国防科学技术大学 |
一种伪差分读取非易失存储器结构
|
US9552171B2
(en)
|
2014-10-29 |
2017-01-24 |
Sandisk Technologies Llc |
Read scrub with adaptive counter management
|
US9978456B2
(en)
|
2014-11-17 |
2018-05-22 |
Sandisk Technologies Llc |
Techniques for reducing read disturb in partially written blocks of non-volatile memory
|
US9349479B1
(en)
|
2014-11-18 |
2016-05-24 |
Sandisk Technologies Inc. |
Boundary word line operation in nonvolatile memory
|
US9449700B2
(en)
|
2015-02-13 |
2016-09-20 |
Sandisk Technologies Llc |
Boundary word line search and open block read methods with reduced read disturb
|
US9653154B2
(en)
|
2015-09-21 |
2017-05-16 |
Sandisk Technologies Llc |
Write abort detection for multi-state memories
|
US10163917B2
(en)
*
|
2016-11-01 |
2018-12-25 |
Micron Technology, Inc. |
Cell disturb prevention using a leaker device to reduce excess charge from an electronic device
|
US10650978B2
(en)
|
2017-12-15 |
2020-05-12 |
Micron Technology, Inc. |
Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
|
US11488658B2
(en)
*
|
2020-04-29 |
2022-11-01 |
Qualcomm Incorporated |
Write assist scheme with bitline
|
US20230395101A1
(en)
*
|
2022-06-02 |
2023-12-07 |
Micron Technology, Inc. |
Multi-level cells, and related arrays, devices, systems, and methods
|