DE69517693T2 - Standardzellenbibliothek für den Entwurf von integrierten Schaltungen - Google Patents

Standardzellenbibliothek für den Entwurf von integrierten Schaltungen

Info

Publication number
DE69517693T2
DE69517693T2 DE69517693T DE69517693T DE69517693T2 DE 69517693 T2 DE69517693 T2 DE 69517693T2 DE 69517693 T DE69517693 T DE 69517693T DE 69517693 T DE69517693 T DE 69517693T DE 69517693 T2 DE69517693 T2 DE 69517693T2
Authority
DE
Germany
Prior art keywords
integrated circuit
circuit design
standard cell
cell library
library
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517693T
Other languages
English (en)
Other versions
DE69517693D1 (de
Inventor
Carlo Dallavalle
Pierangelo Confalonieri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69517693D1 publication Critical patent/DE69517693D1/de
Application granted granted Critical
Publication of DE69517693T2 publication Critical patent/DE69517693T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69517693T 1995-12-29 1995-12-29 Standardzellenbibliothek für den Entwurf von integrierten Schaltungen Expired - Fee Related DE69517693T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830559A EP0782187B1 (de) 1995-12-29 1995-12-29 Standardzellenbibliothek für den Entwurf von integrierten Schaltungen

Publications (2)

Publication Number Publication Date
DE69517693D1 DE69517693D1 (de) 2000-08-03
DE69517693T2 true DE69517693T2 (de) 2001-03-01

Family

ID=8222097

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517693T Expired - Fee Related DE69517693T2 (de) 1995-12-29 1995-12-29 Standardzellenbibliothek für den Entwurf von integrierten Schaltungen

Country Status (3)

Country Link
US (1) US5763907A (de)
EP (1) EP0782187B1 (de)
DE (1) DE69517693T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4014708B2 (ja) * 1997-08-21 2007-11-28 株式会社ルネサステクノロジ 半導体集積回路装置の設計方法
JP3349989B2 (ja) * 1999-06-18 2002-11-25 エヌイーシーマイクロシステム株式会社 半導体集積回路装置及びそのレイアウト方法及び装置
EP1085333B1 (de) * 1999-09-14 2005-07-13 STMicroelectronics S.r.l. Verfahren zur ruhestrombestimmung
US6425115B1 (en) * 2000-05-09 2002-07-23 Ess Technology, Inc. Area efficient delay circuits
US6490708B2 (en) 2001-03-19 2002-12-03 International Business Machines Corporation Method of integrated circuit design by selection of noise tolerant gates
US7299203B1 (en) * 2001-04-19 2007-11-20 Xilinx, Inc. Method for storing and shipping programmable ASSP devices
AU2003223746A1 (en) * 2002-04-25 2003-11-10 Arc International Apparatus and method for managing integrated circuit designs
US7219324B1 (en) * 2003-06-02 2007-05-15 Virage Logic Corporation Various methods and apparatuses to route multiple power rails to a cell
US20050278659A1 (en) * 2004-05-27 2005-12-15 Xiaonan Zhang Cell library providing transistor size information for automatic circuit design
US7114134B2 (en) * 2004-05-27 2006-09-26 Veri Silicon Holdings, Co. Ltd Automatic circuit design method with a cell library providing transistor size information
US7254802B2 (en) * 2004-05-27 2007-08-07 Verisilicon Holdings, Co. Ltd. Standard cell library having cell drive strengths selected according to delay
JP2007103607A (ja) * 2005-10-03 2007-04-19 Matsushita Electric Ind Co Ltd スタンダードセル、半導体集積回路、半導体集積回路の設計方法、半導体集積回路の設計装置、及びスタンダードセルライブラリ
US7989849B2 (en) * 2006-11-15 2011-08-02 Synopsys, Inc. Apparatuses and methods for efficient power rail structures for cell libraries
JP2008213243A (ja) * 2007-03-02 2008-09-18 Ricoh Co Ltd 光走査装置、光走査方法、プログラム、記録媒体及び画像形成装置
US8032338B2 (en) * 2008-06-13 2011-10-04 Power Integrations, Inc. Method and apparatus for design of a power supply
US8390331B2 (en) 2009-12-29 2013-03-05 Nxp B.V. Flexible CMOS library architecture for leakage power and variability reduction
US8423946B1 (en) 2010-05-25 2013-04-16 Marvell International Ltd. Circuitry having programmable power rails, architectures, apparatuses, and systems including the same, and methods and algorithms for programming and/or configuring power rails in an integrated circuit
US9529953B2 (en) * 2012-08-02 2016-12-27 The United States Of America, As Represented By The Secretary Of The Navy Subthreshold standard cell library
US10103258B2 (en) * 2016-12-29 2018-10-16 Texas Instruments Incorporated Laterally diffused metal oxide semiconductor with gate poly contact within source window
DE102017127276A1 (de) * 2017-08-30 2019-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Standardzellen und abwandlungen davon innerhalb einer standardzellenbibliothek

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983619A (en) * 1968-01-26 1976-10-05 Hitachi, Ltd. Large scale integrated circuit array of unit cells and method of manufacturing same
US5545904A (en) * 1986-01-17 1996-08-13 Quick Technologies Ltd. Personalizable gate array devices
JP2739958B2 (ja) * 1988-06-28 1998-04-15 株式会社東芝 スタンダードセル
JPS6331644A (ja) * 1986-07-25 1988-02-10 横河メディカルシステム株式会社 Ｘ線断層撮影装置
JP2704534B2 (ja) * 1988-12-16 1998-01-26 日本電信電話株式会社 アナログ・デジタル混在ｌｓｉ
JPH0383375A (ja) * 1989-08-25 1991-04-09 Sony Corp 半導体装置
US5164811A (en) * 1990-04-20 1992-11-17 Seiko Epson Corporation Semiconductor integrated circuit with varying channel widths
EP0471535B1 (de) * 1990-08-13 1998-01-28 Nec Corporation Halbleiterspeicheranordnung
US5384472A (en) * 1992-06-10 1995-01-24 Aspec Technology, Inc. Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density
US5367187A (en) * 1992-12-22 1994-11-22 Quality Semiconductor, Inc. Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions
JPH0758301A (ja) * 1993-08-13 1995-03-03 Oki Electric Ind Co Ltd 半導体集積回路装置
JP3286470B2 (ja) * 1994-08-09 2002-05-27 三菱電機株式会社 半導体集積回路、半導体集積回路の製造方法及びセルの配置方法
US5635737A (en) * 1994-09-23 1997-06-03 Aspec Technology, Inc. Symmetrical multi-layer metal logic array with extension portions for increased gate density and a testability area

Also Published As

Publication number Publication date
DE69517693D1 (de) 2000-08-03
EP0782187B1 (de) 2000-06-28
EP0782187A1 (de) 1997-07-02
US5763907A (en) 1998-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee