DE69525421D1 - Integrierte Speicherschaltungsanordnung - Google Patents

Integrierte Speicherschaltungsanordnung

Info

Publication number
DE69525421D1
DE69525421D1 DE69525421T DE69525421T DE69525421D1 DE 69525421 D1 DE69525421 D1 DE 69525421D1 DE 69525421 T DE69525421 T DE 69525421T DE 69525421 T DE69525421 T DE 69525421T DE 69525421 D1 DE69525421 D1 DE 69525421D1
Authority
DE
Germany
Prior art keywords
circuit arrangement
memory circuit
integrated memory
integrated
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69525421T
Other languages
English (en)
Inventor
Michael Charles Hammick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
STMicroelectronics Ltd Great Britain
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Ltd Great Britain, SGS Thomson Microelectronics Ltd filed Critical STMicroelectronics Ltd Great Britain
Application granted granted Critical
Publication of DE69525421D1 publication Critical patent/DE69525421D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
DE69525421T 1994-11-15 1995-11-09 Integrierte Speicherschaltungsanordnung Expired - Lifetime DE69525421D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9423036A GB9423036D0 (en) 1994-11-15 1994-11-15 An integrated circuit memory device

Publications (1)

Publication Number Publication Date
DE69525421D1 true DE69525421D1 (de) 2002-03-21

Family

ID=10764430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525421T Expired - Lifetime DE69525421D1 (de) 1994-11-15 1995-11-09 Integrierte Speicherschaltungsanordnung

Country Status (5)

Country Link
US (1) US5764572A (de)
EP (1) EP0713222B1 (de)
JP (1) JPH08227586A (de)
DE (1) DE69525421D1 (de)
GB (1) GB9423036D0 (de)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050281887A1 (en) * 1995-08-31 2005-12-22 Rizoiu Ioana M Fluid conditioning system
KR100248868B1 (ko) * 1996-12-14 2000-03-15 윤종용 플래시 불휘발성 반도체 메모리 장치 및 그 장치의 동작 모드 제어 방법
IT1291283B1 (it) * 1997-04-30 1999-01-07 Sgs Thomson Microelectronics Amplificatore di lettura dinamico per dispositivi di memoria a semiconduttore di tipo eprom eeprom e flash-eprom
US5831895A (en) * 1997-07-30 1998-11-03 Micron Technology, Inc. Dynamic cell plate sensing and equilibration in a memory device
KR100327421B1 (ko) * 1997-12-31 2002-07-27 주식회사 하이닉스반도체 비휘발성 메모리 소자의 프로그램 시스템 및 그의 프로그램 방법
US6108240A (en) * 1999-02-04 2000-08-22 Tower Semiconductor Ltd. Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions
US6259643B1 (en) * 1999-05-28 2001-07-10 Systems Integration Inc. Single event upset (SEU) hardened static random access memory cell
US6816554B1 (en) * 1999-07-12 2004-11-09 Intel Corporation Communication bus for low voltage swing data signals
US6678196B2 (en) * 2001-07-06 2004-01-13 Micron Technology, Inc. Writing to and reading from a RAM or a CAM using current drivers and current sensing logic
US6618307B2 (en) * 2001-09-05 2003-09-09 Sun Microsystems, Inc. Dynamic DRAM sense amplifier
US6525982B1 (en) * 2001-09-11 2003-02-25 Micron Technology, Inc. Methods of programming and circuitry for a programmable element
KR100454143B1 (ko) * 2001-11-19 2004-10-26 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그 소거 방법
US7061792B1 (en) * 2002-08-10 2006-06-13 National Semiconductor Corporation Low AC power SRAM architecture
KR100484255B1 (ko) * 2002-10-31 2005-04-22 주식회사 하이닉스반도체 감지증폭기의 동작시 노이즈가 감소된 반도체 메모리 장치
US6812746B2 (en) * 2002-11-12 2004-11-02 Micron Technology, Inc. Method and apparatus for amplifying a regulated differential signal to a higher voltage
US6768677B2 (en) * 2002-11-22 2004-07-27 Advanced Micro Devices, Inc. Cascode amplifier circuit for producing a fast, stable and accurate bit line voltage
FR2859327B1 (fr) * 2003-08-29 2005-11-25 St Microelectronics Sa Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement
US7164612B1 (en) * 2003-10-10 2007-01-16 Sun Microsystems, Inc. Test circuit for measuring sense amplifier and memory mismatches
DE10355320B3 (de) * 2003-11-27 2005-04-14 Infineon Technologies Ag Hochauflösender digitaler Pulsweitenmodulator und Verfahren zum Erzeugen eines hochaufgelösten pulsweitenmodulierten Signals
KR100598167B1 (ko) * 2004-02-05 2006-07-10 주식회사 하이닉스반도체 반도체 메모리 장치 및 센스앰프의 접속방법
US7196928B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling during read operations of non-volatile memory
US7196946B2 (en) * 2005-04-05 2007-03-27 Sandisk Corporation Compensating for coupling in non-volatile storage
US7187585B2 (en) * 2005-04-05 2007-03-06 Sandisk Corporation Read operation for non-volatile storage that includes compensation for coupling
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7262994B2 (en) * 2005-12-06 2007-08-28 Sandisk Corporation System for reducing read disturb for non-volatile storage
US7349258B2 (en) * 2005-12-06 2008-03-25 Sandisk Corporation Reducing read disturb for non-volatile storage
US7443726B2 (en) * 2005-12-29 2008-10-28 Sandisk Corporation Systems for alternate row-based reading and writing for non-volatile memory
US7349260B2 (en) * 2005-12-29 2008-03-25 Sandisk Corporation Alternate row-based reading and writing for non-volatile memory
US7436733B2 (en) * 2006-03-03 2008-10-14 Sandisk Corporation System for performing read operation on non-volatile storage with compensation for coupling
US7499319B2 (en) * 2006-03-03 2009-03-03 Sandisk Corporation Read operation for non-volatile storage with compensation for coupling
US7440331B2 (en) * 2006-06-01 2008-10-21 Sandisk Corporation Verify operation for non-volatile storage using different voltages
US7457163B2 (en) * 2006-06-01 2008-11-25 Sandisk Corporation System for verifying non-volatile storage using different voltages
US7310272B1 (en) * 2006-06-02 2007-12-18 Sandisk Corporation System for performing data pattern sensitivity compensation using different voltage
US7450421B2 (en) * 2006-06-02 2008-11-11 Sandisk Corporation Data pattern sensitivity compensation using different voltage
US7352628B2 (en) * 2006-06-19 2008-04-01 Sandisk Corporation Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory
US7606084B2 (en) * 2006-06-19 2009-10-20 Sandisk Corporation Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory
US7506113B2 (en) * 2006-07-20 2009-03-17 Sandisk Corporation Method for configuring compensation
US7495953B2 (en) * 2006-07-20 2009-02-24 Sandisk Corporation System for configuring compensation
US7443729B2 (en) * 2006-07-20 2008-10-28 Sandisk Corporation System that compensates for coupling based on sensing a neighbor using coupling
US7400535B2 (en) * 2006-07-20 2008-07-15 Sandisk Corporation System that compensates for coupling during programming
US7522454B2 (en) * 2006-07-20 2009-04-21 Sandisk Corporation Compensating for coupling based on sensing a neighbor using coupling
US7885119B2 (en) 2006-07-20 2011-02-08 Sandisk Corporation Compensating for coupling during programming
US7684247B2 (en) * 2006-09-29 2010-03-23 Sandisk Corporation Reverse reading in non-volatile memory with compensation for coupling
US7447076B2 (en) * 2006-09-29 2008-11-04 Sandisk Corporation Systems for reverse reading in non-volatile memory with compensation for coupling
US7616498B2 (en) * 2006-12-29 2009-11-10 Sandisk Corporation Non-volatile storage system with resistance sensing and compensation
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7518923B2 (en) * 2006-12-29 2009-04-14 Sandisk Corporation Margined neighbor reading for non-volatile memory read operations including coupling compensation
US7495962B2 (en) * 2006-12-29 2009-02-24 Sandisk Corporation Alternating read mode
US7440324B2 (en) * 2006-12-29 2008-10-21 Sandisk Corporation Apparatus with alternating read mode
US7590002B2 (en) * 2006-12-29 2009-09-15 Sandisk Corporation Resistance sensing and compensation for non-volatile storage
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
KR100854908B1 (ko) * 2007-03-29 2008-08-28 주식회사 하이닉스반도체 반도체 메모리 소자의 셀 어레이 및 이의 동작 방법
US7751253B2 (en) 2008-03-17 2010-07-06 Micron Technology, Inc. Analog sensing of memory cells with a source follower driver in a semiconductor memory device
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories
US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
FR2948809B1 (fr) * 2009-07-31 2012-08-17 St Microelectronics Rousset Amplificateur de lecture faible puissance auto-minute
FR2951575B1 (fr) * 2009-10-20 2011-12-16 St Microelectronics Rousset Amplificateur de lecture ayant des moyens de precharge de bitline rapides
US9847666B2 (en) 2013-09-03 2017-12-19 Apple Inc. Power management for inductive charging systems
JP6161482B2 (ja) 2013-09-19 2017-07-12 ルネサスエレクトロニクス株式会社 半導体記憶装置
US9837866B2 (en) 2013-10-09 2017-12-05 Apple Inc. Reducing power dissipation in inductive energy transfer systems
US9673784B2 (en) 2013-11-21 2017-06-06 Apple Inc. Using pulsed biases to represent DC bias for charging
US9123414B2 (en) * 2013-11-22 2015-09-01 Micron Technology, Inc. Memory systems and memory programming methods
US9336875B2 (en) 2013-12-16 2016-05-10 Micron Technology, Inc. Memory systems and memory programming methods
US10122217B2 (en) 2015-09-28 2018-11-06 Apple Inc. In-band signaling within wireless power transfer systems
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
US10601250B1 (en) 2016-09-22 2020-03-24 Apple Inc. Asymmetric duty control of a half bridge power converter
US10366752B2 (en) * 2016-12-11 2019-07-30 Technion Research & Development Foundation Ltd. Programming for electronic memories
US10978899B2 (en) 2017-02-02 2021-04-13 Apple Inc. Wireless charging system with duty cycle control
KR20210008195A (ko) 2019-07-10 2021-01-21 삼성전자주식회사 메모리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184794A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 半導体記憶装置
JPS6363197A (ja) * 1986-09-03 1988-03-19 Toshiba Corp 半導体記憶装置
US4980863A (en) * 1987-03-31 1990-12-25 Kabushiki Kaisha Toshiba Semiconductor memory device having switching circuit for coupling together two pairs of bit lines
US5088065A (en) * 1987-09-04 1992-02-11 Hitachi, Ltd. Static type semiconductor memory
DE3863072D1 (de) * 1988-02-26 1991-07-04 Ibm Zweistufiger leserverstaerker fuer ram-speicher.
JPH01277396A (ja) * 1988-04-28 1989-11-07 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5022009A (en) * 1988-06-02 1991-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having reading operation of information by differential amplification
JP2621411B2 (ja) * 1988-08-31 1997-06-18 三菱電機株式会社 不揮発性半導体記憶装置
JPH0411396A (ja) * 1990-04-27 1992-01-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0411397A (ja) * 1990-04-27 1992-01-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH04119597A (ja) * 1990-09-07 1992-04-21 Mitsubishi Electric Corp 不揮発性半導体記憶装置のセンスアンプ
JP2509004B2 (ja) * 1991-03-04 1996-06-19 株式会社東芝 半導体記憶装置
DE69222712T2 (de) * 1991-07-25 1998-02-12 St Microelectronics Srl Leseverstärker für programmierbare Speicher mit einer virtuell verbesserten Signalquelle
JP3142335B2 (ja) * 1991-09-24 2001-03-07 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
GB9423036D0 (en) 1995-01-04
JPH08227586A (ja) 1996-09-03
EP0713222A1 (de) 1996-05-22
EP0713222B1 (de) 2002-02-13
US5764572A (en) 1998-06-09

Similar Documents

Publication Publication Date Title
DE69525421D1 (de) Integrierte Speicherschaltungsanordnung
DE69739934D1 (de) Integrierte Schaltung
KR960008845A (ko) 반도체 기억장치
DE69529042D1 (de) Halbleiterschaltung
DE69225537T2 (de) Integrierte Speicherschaltung
DE69505091T2 (de) Schaltungsganordnung
DE69832348D1 (de) Speicherschaltung
DE69520333D1 (de) Halbleiterspeicher
DE69520254T2 (de) Halbleiterspeicher
DE69705118D1 (de) Speichervorrichtungsfolgeschaltung
DE69517984D1 (de) Schaltungsanordnung
KR960012033A (ko) 반도체 기억장치
DE69317944D1 (de) Integrierte Speicherschaltung
KR960015828A (ko) 반도체 집적 회로
DE69517759D1 (de) Integrierte Halbleiterschaltung
KR960011703A (ko) 반도체 메모리
DE69526834D1 (de) Halbleiterspeicher
KR960012034A (ko) 반도체 메모리
DE69724575D1 (de) Integrierte Schaltung
NO993614D0 (no) Minnekrets
DE29510986U1 (de) Schaltungsanordnung
DE59502827D1 (de) Integrierte schaltung
DE69521998T2 (de) Schaltungsanordnung
KR960012010A (ko) 반도체 메모리
DE69622172D1 (de) Integrierte schaltungsanordnung

Legal Events

Date Code Title Description
8332 No legal effect for de