FR2859327B1 - Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement - Google Patents

Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement

Info

Publication number
FR2859327B1
FR2859327B1 FR0310322A FR0310322A FR2859327B1 FR 2859327 B1 FR2859327 B1 FR 2859327B1 FR 0310322 A FR0310322 A FR 0310322A FR 0310322 A FR0310322 A FR 0310322A FR 2859327 B1 FR2859327 B1 FR 2859327B1
Authority
FR
France
Prior art keywords
switching
node
crossing current
switching device
multiple potentials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0310322A
Other languages
English (en)
Other versions
FR2859327A1 (fr
Inventor
Cyrille Dray
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0310322A priority Critical patent/FR2859327B1/fr
Priority to US10/929,359 priority patent/US7110315B2/en
Publication of FR2859327A1 publication Critical patent/FR2859327A1/fr
Application granted granted Critical
Publication of FR2859327B1 publication Critical patent/FR2859327B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
FR0310322A 2003-08-29 2003-08-29 Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement Expired - Fee Related FR2859327B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0310322A FR2859327B1 (fr) 2003-08-29 2003-08-29 Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement
US10/929,359 US7110315B2 (en) 2003-08-29 2004-08-27 Switch arrangement for switching a node between different voltages without generating combinational currents

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0310322A FR2859327B1 (fr) 2003-08-29 2003-08-29 Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement

Publications (2)

Publication Number Publication Date
FR2859327A1 FR2859327A1 (fr) 2005-03-04
FR2859327B1 true FR2859327B1 (fr) 2005-11-25

Family

ID=34130672

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0310322A Expired - Fee Related FR2859327B1 (fr) 2003-08-29 2003-08-29 Dispositif de commutation permettant de commuter un noeud sur plusieurs potentiels sans courant de croisement

Country Status (2)

Country Link
US (1) US7110315B2 (fr)
FR (1) FR2859327B1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9423036D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics An integrated circuit memory device
US5923585A (en) * 1997-01-10 1999-07-13 Invox Technology Source biasing in non-volatile memory having row-based sectors
EP0856851B1 (fr) * 1997-01-30 2004-03-24 Motorola, Inc. Circuit et procédé de verrouillage d'une ligne de bit dans une mémoire non volatile
US6049498A (en) * 1998-06-19 2000-04-11 Lucent Technologies, Inc. Double transistor switch for supplying multiple voltages to flash memory wordlines
US6181599B1 (en) * 1999-04-13 2001-01-30 Sandisk Corporation Method for applying variable row BIAS to reduce program disturb in a flash memory storage array
DE69922637D1 (de) * 1999-06-04 2005-01-20 St Microelectronics Srl CMOS Schalter zum Übertragen von hohen Spannungen, insbesondere für Zeilendekodierer in nichtflüchtigen Speichern mit geringem Verbrauch während des Schaltens
US6249458B1 (en) * 2000-06-22 2001-06-19 Xilinx, Inc. Switching circuit for transference of multiple negative voltages

Also Published As

Publication number Publication date
US7110315B2 (en) 2006-09-19
FR2859327A1 (fr) 2005-03-04
US20050077924A1 (en) 2005-04-14

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090430