FR2955200B1 - Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree - Google Patents

Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree

Info

Publication number
FR2955200B1
FR2955200B1 FR1050244A FR1050244A FR2955200B1 FR 2955200 B1 FR2955200 B1 FR 2955200B1 FR 1050244 A FR1050244 A FR 1050244A FR 1050244 A FR1050244 A FR 1050244A FR 2955200 B1 FR2955200 B1 FR 2955200B1
Authority
FR
France
Prior art keywords
insulated
manufacturing
contact
semiconductor regions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1050244A
Other languages
English (en)
Other versions
FR2955200A1 (fr
Inventor
Carlos Mazure
Richard Ferrant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1050244A priority Critical patent/FR2955200B1/fr
Priority to US12/984,466 priority patent/US9490264B2/en
Priority to KR1020110003089A priority patent/KR101277328B1/ko
Priority to JP2011004142A priority patent/JP5543383B2/ja
Priority to CN201110038036.5A priority patent/CN102184927B/zh
Priority to TW100101081A priority patent/TWI455270B/zh
Priority to EP11150845A priority patent/EP2355143A1/fr
Priority to SG2011002458A priority patent/SG173270A1/en
Publication of FR2955200A1 publication Critical patent/FR2955200A1/fr
Application granted granted Critical
Publication of FR2955200B1 publication Critical patent/FR2955200B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
FR1050244A 2010-01-14 2010-01-14 Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree Active FR2955200B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1050244A FR2955200B1 (fr) 2010-01-14 2010-01-14 Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
US12/984,466 US9490264B2 (en) 2010-01-14 2011-01-04 Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device
JP2011004142A JP5543383B2 (ja) 2010-01-14 2011-01-12 埋め込み絶縁層を貫いて半導体層間に接触を有するデバイス、およびこのデバイスの製造プロセス
CN201110038036.5A CN102184927B (zh) 2010-01-14 2011-01-12 具有贯穿隐埋绝缘层的区域间触点的器件及其制造方法
KR1020110003089A KR101277328B1 (ko) 2010-01-14 2011-01-12 매립 절연층을 통하여 반도체 영역들 사이에 콘택을 가지는 소자 및 소자의 제조 방법
TW100101081A TWI455270B (zh) 2010-01-14 2011-01-12 具有穿過埋入式絕緣層在半導體區域間的接點之裝置及其製造方法
EP11150845A EP2355143A1 (fr) 2010-01-14 2011-01-13 Dispositif doté d'un contact entre les régions semi-conductrices à travers une couche isolante enterrée et procédé de fabrication dudit dispositif
SG2011002458A SG173270A1 (en) 2010-01-14 2011-01-13 Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1050244A FR2955200B1 (fr) 2010-01-14 2010-01-14 Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree

Publications (2)

Publication Number Publication Date
FR2955200A1 FR2955200A1 (fr) 2011-07-15
FR2955200B1 true FR2955200B1 (fr) 2012-07-20

Family

ID=42342015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1050244A Active FR2955200B1 (fr) 2010-01-14 2010-01-14 Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree

Country Status (8)

Country Link
US (1) US9490264B2 (fr)
EP (1) EP2355143A1 (fr)
JP (1) JP5543383B2 (fr)
KR (1) KR101277328B1 (fr)
CN (1) CN102184927B (fr)
FR (1) FR2955200B1 (fr)
SG (1) SG173270A1 (fr)
TW (1) TWI455270B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9768254B2 (en) 2015-07-30 2017-09-19 International Business Machines Corporation Leakage-free implantation-free ETSOI transistors
DE102015015699A1 (de) 2015-12-04 2017-06-08 Abb Schweiz Ag Elektronisches Leistungsmodul
FR3095891B1 (fr) 2019-05-09 2023-01-13 St Microelectronics Sa Circuit électronique
KR102690949B1 (ko) 2019-06-14 2024-08-02 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
WO2021242721A1 (fr) * 2020-05-28 2021-12-02 Zeno Semiconductor, Inc. Dispositif de mémoire comprenant un transistor à corps électriquement flottant
US11894450B2 (en) * 2021-11-18 2024-02-06 Globalfoundries U.S. Inc. Lateral bipolar transistor with emitter and collector regions including portions within In-insulator layer cavities and method

Family Cites Families (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169233A (en) 1978-02-24 1979-09-25 Rockwell International Corporation High performance CMOS sense amplifier
KR100213602B1 (ko) 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
US5028810A (en) 1989-07-13 1991-07-02 Intel Corporation Four quadrant synapse cell employing single column summing line
JPH0432446A (ja) * 1990-05-25 1992-02-04 Matsushita Graphic Commun Syst Inc 情報通信装置
JP3128829B2 (ja) 1990-12-26 2001-01-29 ソニー株式会社 半導体メモリ装置
JP3003188B2 (ja) 1990-09-10 2000-01-24 ソニー株式会社 半導体メモリ及びその製造方法
JPH04280469A (ja) 1991-03-07 1992-10-06 Mitsubishi Electric Corp 半導体装置
JPH04345064A (ja) 1991-05-22 1992-12-01 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2717740B2 (ja) 1991-08-30 1998-02-25 三菱電機株式会社 半導体集積回路装置
EP0836194B1 (fr) 1992-03-30 2000-05-24 Mitsubishi Denki Kabushiki Kaisha Dispositif à semi-conducteurs
US5325054A (en) 1992-07-07 1994-06-28 Texas Instruments Incorporated Method and system for screening reliability of semiconductor circuits
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP3488730B2 (ja) 1993-11-05 2004-01-19 株式会社ルネサステクノロジ 半導体集積回路装置
US5455791A (en) 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
JP3003088B2 (ja) 1994-06-10 2000-01-24 住友イートンノバ株式会社 イオン注入装置
JP3549602B2 (ja) 1995-01-12 2004-08-04 株式会社ルネサステクノロジ 半導体記憶装置
JPH08255846A (ja) 1995-03-17 1996-10-01 Nippondenso Co Ltd 半導体装置及びその製造方法
JP3288554B2 (ja) 1995-05-29 2002-06-04 株式会社日立製作所 イオン注入装置及びイオン注入方法
JPH0982814A (ja) 1995-07-10 1997-03-28 Denso Corp 半導体集積回路装置及びその製造方法
JPH0982918A (ja) * 1995-09-19 1997-03-28 Toshiba Corp 半導体記憶装置およびその製造方法
US6787844B2 (en) 1995-09-29 2004-09-07 Nippon Steel Corporation Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same
JP3265178B2 (ja) * 1996-02-20 2002-03-11 株式会社東芝 半導体記憶装置及びその製造方法
JP3489090B2 (ja) 1996-02-27 2004-01-19 富士通株式会社 半導体装置及びその製造方法
JPH10125064A (ja) 1996-10-14 1998-05-15 Toshiba Corp 記憶装置
US6121661A (en) * 1996-12-11 2000-09-19 International Business Machines Corporation Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
JPH10208484A (ja) 1997-01-29 1998-08-07 Mitsubishi Electric Corp 半導体記憶装置のデータ読出回路及び半導体記憶装置
US5889293A (en) * 1997-04-04 1999-03-30 International Business Machines Corporation Electrical contact to buried SOI structures
JP3699823B2 (ja) 1998-05-19 2005-09-28 株式会社東芝 半導体装置
US6072217A (en) 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate
FR2779869B1 (fr) 1998-06-15 2003-05-16 Commissariat Energie Atomique Circuit integre de type soi a capacite de decouplage, et procede de realisation d'un tel circuit
US6826730B2 (en) 1998-12-15 2004-11-30 Texas Instruments Incorporated System and method for controlling current in an integrated circuit
JP3456913B2 (ja) 1998-12-25 2003-10-14 株式会社東芝 半導体装置
KR100618789B1 (ko) 1999-07-30 2006-09-06 삼성전자주식회사 소이 구조의 씨모스와 수직형 바이폴라 트랜지스터를 갖는 바이씨모스
US6372600B1 (en) 1999-08-30 2002-04-16 Agere Systems Guardian Corp. Etch stops and alignment marks for bonded wafers
US6476462B2 (en) 1999-12-28 2002-11-05 Texas Instruments Incorporated MOS-type semiconductor device and method for making same
US6417697B2 (en) 2000-02-02 2002-07-09 Broadcom Corporation Circuit technique for high speed low power data transfer bus
US6300218B1 (en) 2000-05-08 2001-10-09 International Business Machines Corporation Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
JP2002110990A (ja) * 2000-09-27 2002-04-12 Toshiba Corp 半導体装置およびその製造方法
US6350653B1 (en) 2000-10-12 2002-02-26 International Business Machines Corporation Embedded DRAM on silicon-on-insulator substrate
JP2002164544A (ja) 2000-11-28 2002-06-07 Sony Corp 半導体装置
US6614190B2 (en) 2001-01-31 2003-09-02 Hitachi, Ltd. Ion implanter
JP3982218B2 (ja) 2001-02-07 2007-09-26 ソニー株式会社 半導体装置およびその製造方法
JP3884266B2 (ja) 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6611023B1 (en) 2001-05-01 2003-08-26 Advanced Micro Devices, Inc. Field effect transistor with self alligned double gate and method of forming same
US6759282B2 (en) * 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
US6498057B1 (en) * 2002-03-07 2002-12-24 International Business Machines Corporation Method for implementing SOI transistor source connections using buried dual rail distribution
EP1357603A3 (fr) 2002-04-18 2004-01-14 Innovative Silicon SA Dispositif semiconducteur
JP3594140B2 (ja) * 2002-06-26 2004-11-24 沖電気工業株式会社 半導体装置の製造方法
US6838723B2 (en) 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US6790713B1 (en) * 2002-09-09 2004-09-14 T-Ram, Inc. Method for making an inlayed thyristor-based device
US7710771B2 (en) 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
JP2004179506A (ja) 2002-11-28 2004-06-24 Seiko Epson Corp Ｓｏｉ構造を有する半導体基板及びその製造方法及び半導体装置
US7030436B2 (en) 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
JP2004303499A (ja) 2003-03-31 2004-10-28 Hitachi High-Technologies Corp イオン注入装置およびイオン注入方法
JP4077381B2 (ja) 2003-08-29 2008-04-16 株式会社東芝 半導体集積回路装置
US6965143B2 (en) 2003-10-10 2005-11-15 Advanced Micro Devices, Inc. Recess channel flash architecture for reduced short channel effect
JP2005158952A (ja) 2003-11-25 2005-06-16 Toshiba Corp 半導体装置及びその製造方法
US7109532B1 (en) 2003-12-23 2006-09-19 Lee Zachary K High Ion/Ioff SOI MOSFET using body voltage control
US20050255666A1 (en) 2004-05-11 2005-11-17 Miradia Inc. Method and structure for aligning mechanical based device to integrated circuits
US7112997B1 (en) 2004-05-19 2006-09-26 Altera Corporation Apparatus and methods for multi-gate silicon-on-insulator transistors
JP4795653B2 (ja) 2004-06-15 2011-10-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7196921B2 (en) 2004-07-19 2007-03-27 Silicon Storage Technology, Inc. High-speed and low-power differential non-volatile content addressable memory cell and array
US7190616B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US7560361B2 (en) 2004-08-12 2009-07-14 International Business Machines Corporation Method of forming gate stack for semiconductor electronic device
KR100663359B1 (ko) 2005-03-31 2007-01-02 삼성전자주식회사 리세스 채널 트랜지스터 구조를 갖는 단일 트랜지스터플로팅 바디 디램 셀 및 그 제조방법
US20060267064A1 (en) 2005-05-31 2006-11-30 Infineon Technologies Ag Semiconductor memory device
US7274618B2 (en) 2005-06-24 2007-09-25 Monolithic System Technology, Inc. Word line driver for DRAM embedded in a logic process
JP4967264B2 (ja) 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
JP4800700B2 (ja) 2005-08-01 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体集積回路
US7314794B2 (en) * 2005-08-08 2008-01-01 International Business Machines Corporation Low-cost high-performance planar back-gate CMOS
JP4413841B2 (ja) 2005-10-03 2010-02-10 株式会社東芝 半導体記憶装置及びその製造方法
JP4822791B2 (ja) 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7601271B2 (en) 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
JP5054919B2 (ja) 2005-12-20 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100735613B1 (ko) 2006-01-11 2007-07-04 삼성전자주식회사 이온주입설비의 디스크 어셈블리
US7304903B2 (en) 2006-01-23 2007-12-04 Purdue Research Foundation Sense amplifier circuit
JP4762036B2 (ja) 2006-04-14 2011-08-31 株式会社東芝 半導体装置
EP2015460A1 (fr) 2006-04-24 2009-01-14 Panasonic Corporation Dispositif de reception, dispositif electronique l'utilisant et procede de reception
US7494902B2 (en) 2006-06-23 2009-02-24 Interuniversitair Microelektronica Centrum Vzw (Imec) Method of fabricating a strained multi-gate transistor
KR100843055B1 (ko) 2006-08-17 2008-07-01 주식회사 하이닉스반도체 플래쉬 메모리 소자 및 그의 제조방법
US7560344B2 (en) 2006-11-15 2009-07-14 Samsung Electronics Co., Ltd. Semiconductor device having a pair of fins and method of manufacturing the same
JP2008130670A (ja) 2006-11-17 2008-06-05 Seiko Epson Corp 半導体装置、論理回路および電子機器
JP5057430B2 (ja) 2006-12-18 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路とその製造方法
JP4869088B2 (ja) 2007-01-22 2012-02-01 株式会社東芝 半導体記憶装置及びその書き込み方法
JP5019436B2 (ja) 2007-02-22 2012-09-05 ルネサスエレクトロニクス株式会社 半導体集積回路
JP5594927B2 (ja) 2007-04-11 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
FR2915024A1 (fr) 2007-04-12 2008-10-17 St Microelectronics Crolles 2 Procede de fabrication permettant l'homogeneisation de l'environnement de transistors et dispositif associe
US7729149B2 (en) 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
EP2015362A1 (fr) 2007-06-04 2009-01-14 STMicroelectronics (Crolles 2) SAS Matrice à semi-conducteurs et procédé de fabrication correspondant
US7449922B1 (en) 2007-06-15 2008-11-11 Arm Limited Sensing circuitry and method of detecting a change in voltage on at least one input line
US7759714B2 (en) 2007-06-26 2010-07-20 Hitachi, Ltd. Semiconductor device
FR2918823B1 (fr) 2007-07-13 2009-10-16 Ecole Centrale De Lyon Etablis Cellule logique reconfigurable a base de transistors mosfet double grille
FR2919112A1 (fr) 2007-07-16 2009-01-23 St Microelectronics Crolles 2 Circuit integre comprenant un transistor et un condensateur et procede de fabrication
WO2009028065A1 (fr) 2007-08-30 2009-03-05 Fujitsu Microelectronics Limited Dispositif d'implantation d'ions, mécanisme de serrage de substrat, et procédé d'implantation d'ions
KR100884344B1 (ko) 2007-10-10 2009-02-18 주식회사 하이닉스반도체 비대칭 소스/드레인 접합을 갖는 불휘발성 메모리소자 및그 제조방법
JP5222520B2 (ja) 2007-10-11 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20090101940A1 (en) 2007-10-19 2009-04-23 Barrows Corey K Dual gate fet structures for flexible gate array design methodologies
DE102007052097B4 (de) 2007-10-31 2010-10-28 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines SOI-Bauelements mit einer Substratdiode
FR2925223B1 (fr) 2007-12-18 2010-02-19 Soitec Silicon On Insulator Procede d'assemblage avec marques enterrees
US7593265B2 (en) 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
JP5412445B2 (ja) 2008-02-20 2014-02-12 ソイテック 酸化物溶解後の酸化
JP6053250B2 (ja) 2008-06-12 2016-12-27 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US8384156B2 (en) 2008-06-13 2013-02-26 Yale University Complementary metal oxide semiconductor devices
US8120110B2 (en) 2008-08-08 2012-02-21 International Business Machines Corporation Semiconductor structure including a high performance FET and a high voltage FET on a SOI substrate
US8012814B2 (en) 2008-08-08 2011-09-06 International Business Machines Corporation Method of forming a high performance fet and a high voltage fet on a SOI substrate
KR101623958B1 (ko) 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
KR101522400B1 (ko) 2008-11-10 2015-05-21 삼성전자주식회사 인버터 및 그를 포함하는 논리소자
FR2955204B1 (fr) * 2010-01-14 2012-07-20 Soitec Silicon On Insulator Cellule memoire dram disposant d'un injecteur bipolaire vertical

Also Published As

Publication number Publication date
JP5543383B2 (ja) 2014-07-09
US9490264B2 (en) 2016-11-08
EP2355143A1 (fr) 2011-08-10
CN102184927A (zh) 2011-09-14
JP2011155259A (ja) 2011-08-11
TWI455270B (zh) 2014-10-01
TW201135894A (en) 2011-10-16
KR20110083540A (ko) 2011-07-20
FR2955200A1 (fr) 2011-07-15
KR101277328B1 (ko) 2013-06-20
US20110169090A1 (en) 2011-07-14
CN102184927B (zh) 2014-11-05
SG173270A1 (en) 2011-08-29

Similar Documents

Publication Publication Date Title
WO2013049042A3 (fr) Structures de nanofils en coalescence avec lacunes interstitielles et procédé pour leur fabrication
EP2738813A3 (fr) Dispositif semi-conducteur comportant une alternance de régions de source et de drain, source respective et bandes métalliques de drain
GB2493238A (en) Graphene channel-based devices and methods for fabrication thereof
FR2955200B1 (fr) Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
FR3010233B1 (fr) Structure semiconductrice a zones d'emission commutables, procede de fabrication d'une telle structure et dispositif semiconducteur comportant une telle structure
EP2543086A4 (fr) Dispositifs semi-conducteurs comprenant une couche de source à percolation électrique et leurs procédés de fabrication
WO2012074872A3 (fr) Structures à nanofils de silicium et de silicium-germanium
TWI370485B (en) Semiconductor device fabrication method, semiconductor device, and semiconductor layer formation method
EP2234163A4 (fr) Dispositif à semi-conducteur et procédé de fabrication du dispositif, et procédé de fabrication de grille de tranchée
TWI562285B (en) Semiconductor device and method for manufacturing the same
EP2660891A4 (fr) Substrat pour dispositif organique électroluminescent et son procédé de fabrication
EP2420599A4 (fr) Substrat, substrat doté d'un film mince, dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
EP2584621A4 (fr) Grille de connexion pour dispositif à semi-conducteurs optique, procédé pour fabriquer une grille de connexion pour dispositif à semi-conducteurs optique, et dispositif à semi-conducteurs optique.
WO2009084860A3 (fr) Dispositif électroluminescent à semiconducteurs
GB201004116D0 (en) Apparatus and method for monitoring a thickness of a silicon wafer with a highly doped layer at least at a backside of the silicon wafer
SG166749A1 (en) Integrated circuit system with through silicon via and method of manufacture thereof
EP2483929A4 (fr) Dispositif à semi-conducteurs comportant une couche barrière contre la diffusion d'oxygène et procédé de fabrication de ce dernier
EP2610898A4 (fr) Substrat épitaxial pour élément semi-conducteur, élément semi-conducteur, procédé de fabrication de substrat épitaxial pour élément semi-conducteur, et procédé de fabrication d'élément semi-conducteur
EP2648234A4 (fr) Elément de réception de lumière, tranche épitaxiale de semi-conducteur, procédé de fabrication de l'élément de réception de lumière et de la tranche épitaxiale de semi-conducteur, et appareil de détection
EP2787375A4 (fr) Matériau de transfert de diffusion de lumière, procédé de formation de couche de diffusion de lumière, dispositif électroluminescent organique, et procédé de fabrication de dispositif électroluminescent organique
EP2441097A4 (fr) Substrat semi-conducteur, dispositif à semi-conducteurs, et leurs procédés de fabrication
EP2916360A4 (fr) Transistor à couches minces et procédé de fabrication, substrat de réseau, dispositif d'affichage et couche barrière de ce dernier
FR2990561B1 (fr) Procede de fabrication de dispositif semi-conducteur et dispositif semi-conducteur;
EP3121647A3 (fr) Dispositif d'affichage et son procédé de fabrication
EP2538449A4 (fr) Procédé et dispositif permettant de fabriquer des dispositifs à semi-conducteur, dispositif à semi-conducteur et élément de transfert

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15