FR3095891B1 - Circuit électronique - Google Patents

Circuit électronique Download PDF

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Publication number
FR3095891B1
FR3095891B1 FR1904838A FR1904838A FR3095891B1 FR 3095891 B1 FR3095891 B1 FR 3095891B1 FR 1904838 A FR1904838 A FR 1904838A FR 1904838 A FR1904838 A FR 1904838A FR 3095891 B1 FR3095891 B1 FR 3095891B1
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FR
France
Prior art keywords
electric circuit
insulating layer
component formed
electronic component
electronic circuit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1904838A
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English (en)
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FR3095891A1 (fr
Inventor
Conti Louise De
Philippe Galy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
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STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1904838A priority Critical patent/FR3095891B1/fr
Priority to US16/869,840 priority patent/US11581303B2/en
Publication of FR3095891A1 publication Critical patent/FR3095891A1/fr
Priority to US18/095,728 priority patent/US11916061B2/en
Application granted granted Critical
Publication of FR3095891B1 publication Critical patent/FR3095891B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
    • H01L27/0277—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the local electrical biasing of the layer acting as base of said parasitic bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type

Abstract

Circuit électronique La présente description concerne un circuit électronique (10) comprenant un premier composant électronique formé au-dessus d'une couche isolante enterrée (23), et un deuxième composant électronique formé en dessous de ladite couche, dans lequel ladite couche isolante (23) est traversée de part en part par au moins un caisson semiconducteur (29) reliant les premier et deuxième composants. Figure pour l'abrégé : Fig. 1
FR1904838A 2019-05-09 2019-05-09 Circuit électronique Active FR3095891B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1904838A FR3095891B1 (fr) 2019-05-09 2019-05-09 Circuit électronique
US16/869,840 US11581303B2 (en) 2019-05-09 2020-05-08 Electronic circuit
US18/095,728 US11916061B2 (en) 2019-05-09 2023-01-11 Electronic circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1904838A FR3095891B1 (fr) 2019-05-09 2019-05-09 Circuit électronique
FR1904838 2019-05-09

Publications (2)

Publication Number Publication Date
FR3095891A1 FR3095891A1 (fr) 2020-11-13
FR3095891B1 true FR3095891B1 (fr) 2023-01-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1904838A Active FR3095891B1 (fr) 2019-05-09 2019-05-09 Circuit électronique

Country Status (2)

Country Link
US (2) US11581303B2 (fr)
FR (1) FR3095891B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11955472B2 (en) * 2021-12-17 2024-04-09 Globalfoundries U.S. Inc. Semiconductor-controlled rectifier with low trigger voltage for electrostatic discharge protection
US11935946B2 (en) * 2022-06-27 2024-03-19 Globalfoundries U.S. Inc. Silicon-controlled rectifiers in a silicon-on-insulator technology
US20240096874A1 (en) * 2022-09-15 2024-03-21 Globalfoundries U.S. Inc. Trigger silicon controlled rectifier

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682047A (en) * 1995-06-07 1997-10-28 Lsi Logic Corporation Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection
US6121661A (en) * 1996-12-11 2000-09-19 International Business Machines Corporation Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation
US6594132B1 (en) * 2000-05-17 2003-07-15 Sarnoff Corporation Stacked silicon controlled rectifiers for ESD protection
US6790713B1 (en) * 2002-09-09 2004-09-14 T-Ram, Inc. Method for making an inlayed thyristor-based device
US6888710B2 (en) * 2003-01-03 2005-05-03 Micrel, Incorporated Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors
US7245466B2 (en) * 2003-10-21 2007-07-17 Texas Instruments Incorporated Pumped SCR for ESD protection
US7145186B2 (en) * 2004-08-24 2006-12-05 Micron Technology, Inc. Memory cell with trenched gated thyristor
JP4696964B2 (ja) * 2005-07-15 2011-06-08 ソニー株式会社 メモリ用の半導体装置
US7655973B2 (en) * 2005-10-31 2010-02-02 Micron Technology, Inc. Recessed channel negative differential resistance-based memory cell
US7465964B2 (en) * 2005-12-30 2008-12-16 Cambridge Semiconductor Limited Semiconductor device in which an injector region is isolated from a substrate
US7619863B2 (en) * 2006-07-06 2009-11-17 Stmicroelectronics, Sa Gated thyristor and related system and method
FR2955200B1 (fr) * 2010-01-14 2012-07-20 Soitec Silicon On Insulator Dispositif, et son procede de fabrication, disposant d'un contact entre regions semi-conductrices a travers une couche isolante enterree
FR2959598B1 (fr) * 2010-04-29 2012-12-07 St Microelectronics Tours Sas Commutateur bidirectionnel a commande en q1, q4
WO2012119788A1 (fr) * 2011-03-10 2012-09-13 Qpx Gmbh Circuit intégré incluant un redresseur commandé au silicium
FR2982416B1 (fr) * 2011-11-03 2014-01-03 St Microelectronics Sa Dispositif electronique de protection contre les decharges electrostatiques
FR2993401A1 (fr) * 2012-07-13 2014-01-17 St Microelectronics Sa Transistor mos sur soi protege contre des surtensions
FR3005203B1 (fr) * 2013-04-26 2017-01-06 Commissariat Energie Atomique Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques
US9614367B2 (en) * 2013-09-13 2017-04-04 Stmicroelectronics Sa Electronic device for ESD protection
FR3004583A1 (fr) * 2013-10-28 2014-10-17 St Microelectronics Sa Transistor mos a drain etendu en couche mince sur isolant
CN105702674B (zh) * 2016-03-18 2019-01-04 江苏艾伦摩尔微电子科技有限公司 一种静电放电防护装置
EP3291307B1 (fr) * 2016-08-31 2021-11-03 Stmicroelectronics Sa Point memoire

Also Published As

Publication number Publication date
US20230163117A1 (en) 2023-05-25
US11581303B2 (en) 2023-02-14
US11916061B2 (en) 2024-02-27
FR3095891A1 (fr) 2020-11-13
US20200357788A1 (en) 2020-11-12

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