JP4696964B2 - メモリ用の半導体装置 - Google Patents
メモリ用の半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 252
- 239000000758 substrate Substances 0.000 claims description 49
- 239000010408 film Substances 0.000 description 121
- 239000010410 layer Substances 0.000 description 94
- 239000002019 doping agent Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 38
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000000137 annealing Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 230000005684 electric field Effects 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910004143 HfON Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- -1 HfSiON Inorganic materials 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
Description
図1は、本発明の半導体装置の概略を示す構成図である。この図に示す半導体装置1と、図18を用いて説明した従来の半導体装置との異なるところは、中央に配置されたp型領域p2を挟んだ2つの面に、それぞれ独立して制御可能なゲート電極G1,G2を設けたところにある。
図5は、第2実施形態の半導体装置の概略を示す構成図である。この図に示す半導体装置2と、図1を用いて説明した第1実施形態の半導体装置との異なるところは、p型領域p2の3方向の面にゲート電極G3を設けたところにある。
図8は、第3実施形態の半導体装置の概略を示す構成図である。このうち、図8(1)は第3実施形態の半導体装置の斜視図であり、図8(2)は(1)の斜視図における面Sを矢印方向から見た断面図である。これらの図に示す半導体装置3と、図5を用いて説明した第2実施形態の半導体装置2との異なるところは、半導体層201の上面にオフセット絶縁膜301を設けたことにより、半導体層201の両側面側からのみ、p型領域p2に対してゲート電極G3が作用する構成としたところにある。
図9は、第4実施形態の半導体装置の概略を示す構成図である。この図に示す半導体装置4と、図8を用いて説明した第3実施形態の半導体装置3との異なるところは、半導体層201におけるp型領域p2の両側面に、独立したゲート電極G1’,G2’が設けられているところにある。
本第5実施形態においては、第1実施形態〜第4実施形態で説明したサイリスタ構成の半導体装置を1つのDRAMセルとし、複数のDRAMセルを同一基板上に複数配列してなる半導体装置を説明する。尚ここでは、第2実施形態で説明した構成の半導体装置を1つのDRAMセルとする場合を例示するが、第1実施形態および第3、第4実施形態の半導体装置であっても同様に適用することができる。
本第6実施形態においては、上述したサイリスタ構成の半導体装置を用いたSRAMセルを有する半導体装置を説明する。尚ここでは、第2実施形態で説明した構成の半導体装置(サイリスタ)を用いた場合を例示するが、第1実施形態および第3、第4実施形態の半導体装置を用いる場合も同様に適用することができる。
Claims (3)
- 絶縁性基板と、
前記絶縁性基板上に畝状に並べて形成される3次元構造を有し、第1の第1導電型領域、第1の第2導電型領域、第2の第1導電型領域および第2の第2導電型領域によるメモリ用のサイリスタ構成を有する複数の畝状の半導体部と、
前記絶縁性基板上に畝状に並べられる前記複数の畝状の半導体部と交差し、交差する複数の畝状の半導体部の前記第1の第2導電型領域に対して絶縁膜を介して接続されるゲート電極と、
前記絶縁性基板上に畝状に並べられる前記複数の畝状の半導体部と交差し、交差する複数の畝状の半導体部についての一端側の前記第1の第1導電型領域に接続されるカソード電極、または他端側の前記第2の第2導電型領域に接続されるアノード電極と
を有し、
前記畝状の半導体部には、
畝状の延設方向に沿って、前記第1の第1導電型領域、前記第1の第2導電型領域、前記第2の第1導電型領域および前記第2の第2導電型領域が一列に並んだ横型のサイリスタを有し、
前記ゲート電極は、
前記絶縁性基板上に形成される前記複数の畝状の半導体部についての、前記第1の第1導電型領域と前記第2の第1導電型領域とに挟まれている前記第1の第2導電型領域に対して前記絶縁膜を介して重ねて形成され、
前記複数の畝状の半導体部による畝の間において前記絶縁性基板と接し、前記絶縁性基板上で前記第1の第1導電型領域と前記第2の第1導電型領域とに挟まれている3次元構造の前記第1の第2導電型領域についての3方の面に対向する
メモリ用の半導体装置。 - 前記絶縁性基板上で畝状の3次元構造を有する前記畝状の半導体部には、
前記横型のサイリスタが畝状の延設方向に沿って2個形成され、
当該2個の横型のサイリスタは、
前記第2の第2導電型領域を共用する
請求項1記載のメモリ用の半導体装置。 - 前記絶縁性基板上で畝状の3次元構造を有する前記畝状の半導体部は、
前記横型のサイリスタとともに、前記第1の第1導電型領域を当該横型のサイリスタと共用するMOSトランジスタを有する
請求項1記載のメモリ用の半導体装置。
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JP2006047652A JP4696964B2 (ja) | 2005-07-15 | 2006-02-24 | メモリ用の半導体装置 |
US11/482,693 US7365372B2 (en) | 2005-07-15 | 2006-07-10 | Semiconductor device and method for manufacturing semiconductor device |
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JP2006047652A JP4696964B2 (ja) | 2005-07-15 | 2006-02-24 | メモリ用の半導体装置 |
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JP2007049113A JP2007049113A (ja) | 2007-02-22 |
JP4696964B2 true JP4696964B2 (ja) | 2011-06-08 |
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US7365372B2 (en) | 2008-04-29 |
US20070012945A1 (en) | 2007-01-18 |
JP2007049113A (ja) | 2007-02-22 |
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