EP0430682A3 - Serial access semiconductor memory devices - Google Patents

Serial access semiconductor memory devices Download PDF

Info

Publication number
EP0430682A3
EP0430682A3 EP19900312968 EP90312968A EP0430682A3 EP 0430682 A3 EP0430682 A3 EP 0430682A3 EP 19900312968 EP19900312968 EP 19900312968 EP 90312968 A EP90312968 A EP 90312968A EP 0430682 A3 EP0430682 A3 EP 0430682A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor memory
memory devices
serial access
access semiconductor
serial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900312968
Other versions
EP0430682A2 (en
EP0430682B1 (en
Inventor
Masataka C/O Patents Division Wakamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP0430682A2 publication Critical patent/EP0430682A2/en
Publication of EP0430682A3 publication Critical patent/EP0430682A3/en
Application granted granted Critical
Publication of EP0430682B1 publication Critical patent/EP0430682B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
EP90312968A 1989-11-30 1990-11-29 Serial access semiconductor memory devices Expired - Lifetime EP0430682B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1311060A JP2900451B2 (en) 1989-11-30 1989-11-30 Memory device
JP311060/89 1989-11-30

Publications (3)

Publication Number Publication Date
EP0430682A2 EP0430682A2 (en) 1991-06-05
EP0430682A3 true EP0430682A3 (en) 1992-10-21
EP0430682B1 EP0430682B1 (en) 1995-09-06

Family

ID=18012633

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90312968A Expired - Lifetime EP0430682B1 (en) 1989-11-30 1990-11-29 Serial access semiconductor memory devices

Country Status (4)

Country Link
US (1) US5206831A (en)
EP (1) EP0430682B1 (en)
JP (1) JP2900451B2 (en)
DE (1) DE69022179T2 (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3158286B2 (en) * 1991-04-30 2001-04-23 ソニー株式会社 Multiport memory
US5325502A (en) * 1991-05-15 1994-06-28 Micron Technology, Inc. Pipelined SAM register serial output
JP2796590B2 (en) * 1991-08-07 1998-09-10 三菱電機株式会社 Memory device and data processing device using the same
JP3134449B2 (en) * 1992-02-13 2001-02-13 日本電気株式会社 Serial / parallel conversion circuit
KR950013342B1 (en) * 1992-10-06 1995-11-02 삼성전자주식회사 Circuit for repairing defective semiconductor memory device
JP2741824B2 (en) * 1992-10-14 1998-04-22 三菱電機株式会社 Semiconductor storage device
US5508963A (en) * 1993-03-12 1996-04-16 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
US5377146A (en) * 1993-07-23 1994-12-27 Alliance Semiconductor Corporation Hierarchical redundancy scheme for high density monolithic memories
JP3226425B2 (en) * 1994-09-09 2001-11-05 富士通株式会社 Semiconductor storage device
US5678017A (en) 1995-03-24 1997-10-14 Micron Technology, Inc. Automatic reloading of serial read operation pipeline on last bit transfers to serial access memory in split read transfer operations
JP3774500B2 (en) * 1995-05-12 2006-05-17 株式会社ルネサステクノロジ Semiconductor memory device
JPH0935495A (en) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp Semiconductor memory
JP2850953B2 (en) * 1996-07-30 1999-01-27 日本電気株式会社 Semiconductor device
US5731734A (en) * 1996-10-07 1998-03-24 Atmel Corporation Zero power fuse circuit
US5859801A (en) * 1997-03-28 1999-01-12 Siemens Aktiengesellschaft Flexible fuse placement in redundant semiconductor memory
US5872823A (en) * 1997-04-02 1999-02-16 Sutton; Todd R. Reliable switching between data sources in a synchronous communication system
US6018488A (en) * 1997-06-26 2000-01-25 Kabushiki Kaisha Toshiba Semiconductor memory device and method relieving defect of semiconductor memory device
JP3638214B2 (en) * 1998-07-30 2005-04-13 株式会社 沖マイクロデザイン Redundant circuit
JP3967526B2 (en) * 2000-06-05 2007-08-29 富士通株式会社 Semiconductor memory device and method for controlling semiconductor memory device
US6542421B2 (en) 2000-06-05 2003-04-01 Fujitsu Limited Semiconductor memory device with redundancy circuit
JP2002050191A (en) * 2000-08-02 2002-02-15 Fujitsu Ltd Semiconductor memory
JP4080843B2 (en) * 2002-10-30 2008-04-23 株式会社東芝 Nonvolatile semiconductor memory device
KR100618828B1 (en) * 2003-06-04 2006-08-31 삼성전자주식회사 Semiconductor memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operation
US7509543B2 (en) * 2003-06-17 2009-03-24 Micron Technology, Inc. Circuit and method for error test, recordation, and repair
AU2006335685B9 (en) * 2003-07-31 2012-05-03 Cook Medical Technologies Llc Wire guide holder with wire guide deflector
US20050050400A1 (en) * 2003-08-30 2005-03-03 Wuu John J. Shift redundancy encoding for use with digital memories
JP2006012211A (en) * 2004-06-22 2006-01-12 Toshiba Corp Semiconductor integrated circuit
TW200615963A (en) * 2004-10-07 2006-05-16 Amic Technology Corp Memory structure which having repair function and its repair method
KR100648288B1 (en) * 2005-07-22 2006-11-23 삼성전자주식회사 Redundancy selector circuit for use in non-volatile memory device
KR101363965B1 (en) 2006-03-24 2014-02-18 샌디스크 테크놀로지스, 인코포레이티드 Non-volatile memory and method with redundancy data buffered in data latches for defective locations
US7352635B2 (en) 2006-03-24 2008-04-01 Sandisk Corporation Method for remote redundancy for non-volatile memory
US7324389B2 (en) 2006-03-24 2008-01-29 Sandisk Corporation Non-volatile memory with redundancy data buffered in remote buffer circuits
US7394690B2 (en) * 2006-03-24 2008-07-01 Sandisk Corporation Method for column redundancy using data latches in solid-state memories
US9135099B2 (en) * 2012-03-29 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Memory error correction

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0172016A2 (en) * 1984-08-14 1986-02-19 Fujitsu Limited Semiconductor memory device having a redundancy circuit
EP0189576A2 (en) * 1985-01-22 1986-08-06 Texas Instruments Incorporated Multiple pixel mapped video memory system
EP0243859A2 (en) * 1986-05-02 1987-11-04 International Business Machines Corporation Two port random access memory with column redundancy
EP0315257A1 (en) * 1987-11-02 1989-05-10 Koninklijke Philips Electronics N.V. Series-parallel-series memory comprising redundant storage columns, and picture memory comprising such series-parallel-series memories
EP0315157A2 (en) * 1987-11-02 1989-05-10 Kabushiki Kaisha Toshiba Semiconductor memory system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0172016A2 (en) * 1984-08-14 1986-02-19 Fujitsu Limited Semiconductor memory device having a redundancy circuit
EP0189576A2 (en) * 1985-01-22 1986-08-06 Texas Instruments Incorporated Multiple pixel mapped video memory system
EP0243859A2 (en) * 1986-05-02 1987-11-04 International Business Machines Corporation Two port random access memory with column redundancy
EP0315257A1 (en) * 1987-11-02 1989-05-10 Koninklijke Philips Electronics N.V. Series-parallel-series memory comprising redundant storage columns, and picture memory comprising such series-parallel-series memories
EP0315157A2 (en) * 1987-11-02 1989-05-10 Kabushiki Kaisha Toshiba Semiconductor memory system

Also Published As

Publication number Publication date
EP0430682A2 (en) 1991-06-05
JP2900451B2 (en) 1999-06-02
DE69022179T2 (en) 1996-02-01
US5206831A (en) 1993-04-27
EP0430682B1 (en) 1995-09-06
JPH03171499A (en) 1991-07-24
DE69022179D1 (en) 1995-10-12

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