DE69022179D1 - Halbleiterspeichergeräte mit Serienzugriff. - Google Patents
Halbleiterspeichergeräte mit Serienzugriff.Info
- Publication number
- DE69022179D1 DE69022179D1 DE69022179T DE69022179T DE69022179D1 DE 69022179 D1 DE69022179 D1 DE 69022179D1 DE 69022179 T DE69022179 T DE 69022179T DE 69022179 T DE69022179 T DE 69022179T DE 69022179 D1 DE69022179 D1 DE 69022179D1
- Authority
- DE
- Germany
- Prior art keywords
- storage devices
- semiconductor storage
- serial access
- serial
- access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1311060A JP2900451B2 (ja) | 1989-11-30 | 1989-11-30 | メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69022179D1 true DE69022179D1 (de) | 1995-10-12 |
DE69022179T2 DE69022179T2 (de) | 1996-02-01 |
Family
ID=18012633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69022179T Expired - Lifetime DE69022179T2 (de) | 1989-11-30 | 1990-11-29 | Halbleiterspeichergeräte mit Serienzugriff. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5206831A (de) |
EP (1) | EP0430682B1 (de) |
JP (1) | JP2900451B2 (de) |
DE (1) | DE69022179T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3158286B2 (ja) * | 1991-04-30 | 2001-04-23 | ソニー株式会社 | マルチポートメモリ |
US5325502A (en) * | 1991-05-15 | 1994-06-28 | Micron Technology, Inc. | Pipelined SAM register serial output |
JP2796590B2 (ja) * | 1991-08-07 | 1998-09-10 | 三菱電機株式会社 | メモリ装置及びそれを使用したデータ処理装置 |
JP3134449B2 (ja) * | 1992-02-13 | 2001-02-13 | 日本電気株式会社 | シリアル・パラレル変換回路 |
KR950013342B1 (ko) * | 1992-10-06 | 1995-11-02 | 삼성전자주식회사 | 반도체 메모리장치의 결함구제회로 |
JP2741824B2 (ja) * | 1992-10-14 | 1998-04-22 | 三菱電機株式会社 | 半導体記憶装置 |
US5508963A (en) * | 1993-03-12 | 1996-04-16 | Matsushita Electric Industrial Co., Ltd. | Semiconductor integrated circuit |
US5377146A (en) * | 1993-07-23 | 1994-12-27 | Alliance Semiconductor Corporation | Hierarchical redundancy scheme for high density monolithic memories |
JP3226425B2 (ja) * | 1994-09-09 | 2001-11-05 | 富士通株式会社 | 半導体記憶装置 |
US5678017A (en) | 1995-03-24 | 1997-10-14 | Micron Technology, Inc. | Automatic reloading of serial read operation pipeline on last bit transfers to serial access memory in split read transfer operations |
JP3774500B2 (ja) * | 1995-05-12 | 2006-05-17 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JPH0935495A (ja) * | 1995-07-14 | 1997-02-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2850953B2 (ja) * | 1996-07-30 | 1999-01-27 | 日本電気株式会社 | 半導体装置 |
US5731734A (en) * | 1996-10-07 | 1998-03-24 | Atmel Corporation | Zero power fuse circuit |
US5859801A (en) * | 1997-03-28 | 1999-01-12 | Siemens Aktiengesellschaft | Flexible fuse placement in redundant semiconductor memory |
US5872823A (en) * | 1997-04-02 | 1999-02-16 | Sutton; Todd R. | Reliable switching between data sources in a synchronous communication system |
US6018488A (en) * | 1997-06-26 | 2000-01-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method relieving defect of semiconductor memory device |
JP3638214B2 (ja) * | 1998-07-30 | 2005-04-13 | 株式会社 沖マイクロデザイン | 冗長回路 |
US6542421B2 (en) | 2000-06-05 | 2003-04-01 | Fujitsu Limited | Semiconductor memory device with redundancy circuit |
JP3967526B2 (ja) * | 2000-06-05 | 2007-08-29 | 富士通株式会社 | 半導体記憶装置及び半導体記憶装置の制御方法 |
JP2002050191A (ja) * | 2000-08-02 | 2002-02-15 | Fujitsu Ltd | 半導体記憶装置 |
JP4080843B2 (ja) * | 2002-10-30 | 2008-04-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100618828B1 (ko) * | 2003-06-04 | 2006-08-31 | 삼성전자주식회사 | 테스트 모드에서 더 낮은 율로 데이터 비트들을 출력하는반도체 메모리장치 및 동작방법 |
US7509543B2 (en) * | 2003-06-17 | 2009-03-24 | Micron Technology, Inc. | Circuit and method for error test, recordation, and repair |
US20050050400A1 (en) * | 2003-08-30 | 2005-03-03 | Wuu John J. | Shift redundancy encoding for use with digital memories |
JP2006012211A (ja) * | 2004-06-22 | 2006-01-12 | Toshiba Corp | 半導体集積回路 |
US7221604B2 (en) * | 2004-10-07 | 2007-05-22 | Amic Technology Corporation | Memory structure with repairing function and repairing method thereof |
CA2597424C (en) * | 2005-02-10 | 2013-03-05 | Wilson-Cook Medical, Inc. | Wire guide holder with wire guide deflector |
KR100648288B1 (ko) * | 2005-07-22 | 2006-11-23 | 삼성전자주식회사 | 불 휘발성 메모리 장치의 리던던시 선택 회로 |
EP2008283B1 (de) * | 2006-03-24 | 2013-08-07 | SanDisk Technologies Inc. | Nichtflüchtiger speicher und verfahren mit in datensperren gepufferten redundanzdaten für defekte stellen |
US7324389B2 (en) | 2006-03-24 | 2008-01-29 | Sandisk Corporation | Non-volatile memory with redundancy data buffered in remote buffer circuits |
US7394690B2 (en) * | 2006-03-24 | 2008-07-01 | Sandisk Corporation | Method for column redundancy using data latches in solid-state memories |
US7352635B2 (en) | 2006-03-24 | 2008-04-01 | Sandisk Corporation | Method for remote redundancy for non-volatile memory |
US9135099B2 (en) * | 2012-03-29 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory error correction |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6148200A (ja) * | 1984-08-14 | 1986-03-08 | Fujitsu Ltd | 半導体記憶装置 |
DE3588156T2 (de) * | 1985-01-22 | 1998-01-08 | Texas Instruments Inc., Dallas, Tex. | Halbleiterspeicher mit Serienzugriff |
US4719601A (en) * | 1986-05-02 | 1988-01-12 | International Business Machine Corporation | Column redundancy for two port random access memory |
NL8702606A (nl) * | 1987-11-02 | 1989-06-01 | Philips Nv | Serie-parallel-serie-geheugen voorzien van redundante opslagkolommen en beeldgeheugen voorzien van zulke serie-parallel-serie-geheugens. |
JPH01119995A (ja) * | 1987-11-02 | 1989-05-12 | Toshiba Corp | 半導体メモリ |
-
1989
- 1989-11-30 JP JP1311060A patent/JP2900451B2/ja not_active Expired - Lifetime
-
1990
- 1990-11-29 DE DE69022179T patent/DE69022179T2/de not_active Expired - Lifetime
- 1990-11-29 EP EP90312968A patent/EP0430682B1/de not_active Expired - Lifetime
- 1990-11-30 US US07/620,080 patent/US5206831A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0430682A2 (de) | 1991-06-05 |
EP0430682B1 (de) | 1995-09-06 |
US5206831A (en) | 1993-04-27 |
JPH03171499A (ja) | 1991-07-24 |
JP2900451B2 (ja) | 1999-06-02 |
DE69022179T2 (de) | 1996-02-01 |
EP0430682A3 (en) | 1992-10-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |