DE3277750D1 - Semi-conductor memory circuit - Google Patents
Semi-conductor memory circuitInfo
- Publication number
- DE3277750D1 DE3277750D1 DE8282401606T DE3277750T DE3277750D1 DE 3277750 D1 DE3277750 D1 DE 3277750D1 DE 8282401606 T DE8282401606 T DE 8282401606T DE 3277750 T DE3277750 T DE 3277750T DE 3277750 D1 DE3277750 D1 DE 3277750D1
- Authority
- DE
- Germany
- Prior art keywords
- semi
- memory circuit
- conductor memory
- conductor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56136067A JPS6051196B2 (ja) | 1981-09-01 | 1981-09-01 | 半導体メモリ回路 |
JP56136068A JPS6052516B2 (ja) | 1981-09-01 | 1981-09-01 | 半導体メモリ回路 |
JP56136066A JPS5841484A (ja) | 1981-09-01 | 1981-09-01 | 半導体メモリ回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3277750D1 true DE3277750D1 (de) | 1988-01-07 |
Family
ID=27317201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282401606T Expired DE3277750D1 (de) | 1981-09-01 | 1982-08-31 | Semi-conductor memory circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4578778A (de) |
EP (1) | EP0073726B1 (de) |
DE (1) | DE3277750D1 (de) |
IE (1) | IE53806B1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770222B2 (ja) * | 1984-06-04 | 1995-07-31 | 株式会社日立製作所 | Mosスタテイツク型ram |
US4638463A (en) * | 1985-01-24 | 1987-01-20 | International Business Machines Corporation | Fast writing circuit for a soft error protected storage cell |
JPS62145595A (ja) * | 1985-12-20 | 1987-06-29 | Toshiba Corp | 半導体記憶装置 |
US4901279A (en) * | 1988-06-20 | 1990-02-13 | International Business Machines Corporation | MESFET sram with power saving current-limiting transistors |
US4914631A (en) * | 1988-09-30 | 1990-04-03 | Micron Technology, Inc. | Pull up circuit for sense lines in a semiconductor memory |
US4924442A (en) * | 1988-09-30 | 1990-05-08 | Micron Technology, Inc. | Pull up circuit for digit lines in a semiconductor memory |
US5226014A (en) * | 1990-12-24 | 1993-07-06 | Ncr Corporation | Low power pseudo-static ROM |
KR920022301A (ko) * | 1991-05-28 | 1992-12-19 | 김광호 | 반도체 기억장치 |
US5737566A (en) * | 1993-12-20 | 1998-04-07 | Motorola, Inc. | Data processing system having a memory with both a high speed operating mode and a low power operating mode and method therefor |
JP3288189B2 (ja) * | 1994-12-12 | 2002-06-04 | 三菱電機株式会社 | スタティックランダムアクセスメモリ |
JP2001101893A (ja) * | 1999-09-29 | 2001-04-13 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
US8804406B2 (en) | 2012-05-30 | 2014-08-12 | Lsi Corporation | Conditional read-assist feature to accelerate access time in an electronic device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3983543A (en) * | 1975-06-30 | 1976-09-28 | International Business Machines Corporation | Random access memory read/write buffer circuits incorporating complementary field effect transistors |
JPS6028074B2 (ja) * | 1978-02-24 | 1985-07-02 | 株式会社日立製作所 | スタテイツク型misメモリ |
US4236229A (en) * | 1978-07-19 | 1980-11-25 | Texas Instruments Incorporated | Semiconductor memory cell with synthesized load resistors |
US4195356A (en) * | 1978-11-16 | 1980-03-25 | Electronic Memories And Magnetics Corporation | Sense line termination circuit for semiconductor memory systems |
-
1982
- 1982-08-31 EP EP82401606A patent/EP0073726B1/de not_active Expired
- 1982-08-31 DE DE8282401606T patent/DE3277750D1/de not_active Expired
- 1982-09-01 IE IE2122/82A patent/IE53806B1/en not_active IP Right Cessation
- 1982-09-01 US US06/413,752 patent/US4578778A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
IE53806B1 (en) | 1989-03-01 |
EP0073726A2 (de) | 1983-03-09 |
EP0073726A3 (en) | 1984-11-07 |
US4578778A (en) | 1986-03-25 |
EP0073726B1 (de) | 1987-11-25 |
IE822122L (en) | 1983-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR880014861A (ko) | 반도체 기억장치 | |
KR870007515A (ko) | 반도체 기억회로 | |
DE3279855D1 (en) | Nonvolatile semiconductor memory circuit | |
KR860001484A (ko) | 반도체 기억장치 | |
KR860005370A (ko) | 반도체 기억장치 | |
DE3382212D1 (de) | Halbleiterspeicher. | |
IT1161895B (it) | Memoria a semiconduttori | |
DE3279429D1 (en) | Semiconductor integrated memory circuit | |
KR850001613A (ko) | 반도체 메모리 | |
KR860005441A (ko) | 반도체기억장치 | |
KR900008928A (ko) | 반도체 집적회로 | |
DE3485174D1 (de) | Halbleiterspeicheranordnung. | |
DE3485625D1 (de) | Halbleiterspeicheranordnung. | |
KR860004478A (ko) | 반도체 메모리 장치 | |
DE3484180D1 (de) | Halbleiterspeicheranordnung. | |
KR860002824A (ko) | 반도체 기억장치 | |
DE3481355D1 (de) | Halbleiterspeicheranordnung. | |
KR860003606A (ko) | 반도체 메모리 장치 | |
KR860005369A (ko) | 반도체 기억장치 | |
DE3177221D1 (de) | Halbleiterspeicherschaltung. | |
DE3486418D1 (de) | Halbleiterspeicheranordnung | |
GB2143698B (en) | Semiconductor integrated memory circuit | |
DE3381546D1 (de) | Statische speicherschaltung. | |
KR850008756A (ko) | 반도체 메모리 장치 | |
DE3484630D1 (de) | Halbleiterspeicheranordnung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |