CH539360A - Halbleiterschalt- oder Speichervorrichtung - Google Patents

Halbleiterschalt- oder Speichervorrichtung

Info

Publication number
CH539360A
CH539360A CH1420171A CH1420171A CH539360A CH 539360 A CH539360 A CH 539360A CH 1420171 A CH1420171 A CH 1420171A CH 1420171 A CH1420171 A CH 1420171A CH 539360 A CH539360 A CH 539360A
Authority
CH
Switzerland
Prior art keywords
memory device
semiconductor switching
semiconductor
switching
memory
Prior art date
Application number
CH1420171A
Other languages
English (en)
Inventor
Moser Andres
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CH1420171A priority Critical patent/CH539360A/de
Priority to NL7209934A priority patent/NL7209934A/xx
Priority to DE2235465A priority patent/DE2235465C3/de
Priority to JP8466472A priority patent/JPS5619114B2/ja
Priority to IL40282A priority patent/IL40282A/xx
Priority to GB4108172A priority patent/GB1394183A/en
Priority to IT28933/72A priority patent/IT967244B/it
Priority to FR7233370A priority patent/FR2154538B1/fr
Priority to SE7211839A priority patent/SE384599B/xx
Priority to US00292475A priority patent/US3810128A/en
Priority to CA152,609A priority patent/CA971289A/en
Priority to ES407127A priority patent/ES407127A1/es
Priority to HUIE535A priority patent/HU165367B/hu
Publication of CH539360A publication Critical patent/CH539360A/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/33—Material including silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Static Random-Access Memory (AREA)
CH1420171A 1971-09-30 1971-09-30 Halbleiterschalt- oder Speichervorrichtung CH539360A (de)

Priority Applications (13)

Application Number Priority Date Filing Date Title
CH1420171A CH539360A (de) 1971-09-30 1971-09-30 Halbleiterschalt- oder Speichervorrichtung
NL7209934A NL7209934A (de) 1971-09-30 1972-07-19
DE2235465A DE2235465C3 (de) 1971-09-30 1972-07-20 Feldeffekttransistor-Speicherelement
JP8466472A JPS5619114B2 (de) 1971-09-30 1972-08-25
IL40282A IL40282A (en) 1971-09-30 1972-09-01 Semiconductor switching and storage device
GB4108172A GB1394183A (en) 1971-09-30 1972-09-05 Semiconductor devices
IT28933/72A IT967244B (it) 1971-09-30 1972-09-08 Dispositivo di immagazzinamento a barriera di schottky
FR7233370A FR2154538B1 (de) 1971-09-30 1972-09-12
SE7211839A SE384599B (sv) 1971-09-30 1972-09-14 Omkopplings- och lagrings-halvledaranordning
US00292475A US3810128A (en) 1971-09-30 1972-09-26 Semiconductor switching and storage device
CA152,609A CA971289A (en) 1971-09-30 1972-09-27 Bistable schottky rectifier
ES407127A ES407127A1 (es) 1971-09-30 1972-09-29 Un dispositivo semiconductor de conmutacion o memoria.
HUIE535A HU165367B (de) 1971-09-30 1972-09-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1420171A CH539360A (de) 1971-09-30 1971-09-30 Halbleiterschalt- oder Speichervorrichtung

Publications (1)

Publication Number Publication Date
CH539360A true CH539360A (de) 1973-07-15

Family

ID=4398777

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1420171A CH539360A (de) 1971-09-30 1971-09-30 Halbleiterschalt- oder Speichervorrichtung

Country Status (13)

Country Link
US (1) US3810128A (de)
JP (1) JPS5619114B2 (de)
CA (1) CA971289A (de)
CH (1) CH539360A (de)
DE (1) DE2235465C3 (de)
ES (1) ES407127A1 (de)
FR (1) FR2154538B1 (de)
GB (1) GB1394183A (de)
HU (1) HU165367B (de)
IL (1) IL40282A (de)
IT (1) IT967244B (de)
NL (1) NL7209934A (de)
SE (1) SE384599B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240081A (en) * 1975-09-26 1977-03-28 Hitachi Ltd Bi-polar rom
US4167791A (en) * 1978-01-25 1979-09-11 Banavar Jayanth R Non-volatile information storage arrays of cryogenic pin diodes
US4274105A (en) * 1978-12-29 1981-06-16 International Business Machines Corporation MOSFET Substrate sensitivity control
US4646427A (en) * 1984-06-28 1987-03-03 Motorola, Inc. Method of electrically adjusting the zener knee of a lateral polysilicon zener diode
US4965863A (en) * 1987-10-02 1990-10-23 Cray Computer Corporation Gallium arsenide depletion made MESFIT logic cell
US4901279A (en) * 1988-06-20 1990-02-13 International Business Machines Corporation MESFET sram with power saving current-limiting transistors
DE4412475A1 (de) * 1994-04-14 1995-10-19 Daimler Benz Ag Metall-Halbleiter-Diode und Verfahren zur Herstellung von Metall-Halbleiter-Dioden
US5825046A (en) * 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US7379317B2 (en) * 2004-12-23 2008-05-27 Spansion Llc Method of programming, reading and erasing memory-diode in a memory-diode array
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
WO2007086311A1 (en) * 2006-01-27 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting material, light-emitting element, light-emitting device, and electronic appliance
US20070194321A1 (en) * 2006-02-17 2007-08-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
EP1821579A3 (de) * 2006-02-17 2008-04-02 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierendes Element, lichtemittierende Vorrichtung und elektronisches Gerät
US20070278947A1 (en) * 2006-06-02 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, manufacturing method thereof, light-emitting device, and electronic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Ind Co Ltd Negative resistance semiconductor device having an intrinsic region
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
CH506188A (de) * 1970-09-02 1971-04-15 Ibm Feldeffekt-Transistor

Also Published As

Publication number Publication date
GB1394183A (en) 1975-05-14
FR2154538A1 (de) 1973-05-11
JPS5619114B2 (de) 1981-05-06
IL40282A0 (en) 1972-11-28
FR2154538B1 (de) 1976-08-13
NL7209934A (de) 1973-04-03
ES407127A1 (es) 1975-10-16
US3810128A (en) 1974-05-07
DE2235465A1 (de) 1973-04-19
HU165367B (de) 1974-08-28
JPS4843589A (de) 1973-06-23
DE2235465C3 (de) 1981-04-02
DE2235465B2 (de) 1977-02-10
IL40282A (en) 1974-12-31
SE384599B (sv) 1976-05-10
CA971289A (en) 1975-07-15
IT967244B (it) 1974-02-28

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