DE3879766T2 - Halbleiter Speicherzelle. - Google Patents

Halbleiter Speicherzelle.

Info

Publication number
DE3879766T2
DE3879766T2 DE88109300T DE3879766T DE3879766T2 DE 3879766 T2 DE3879766 T2 DE 3879766T2 DE 88109300 T DE88109300 T DE 88109300T DE 3879766 T DE3879766 T DE 3879766T DE 3879766 T2 DE3879766 T2 DE 3879766T2
Authority
DE
Germany
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88109300T
Other languages
English (en)
Other versions
DE3879766D1 (de
Inventor
Kunio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3879766D1 publication Critical patent/DE3879766D1/de
Publication of DE3879766T2 publication Critical patent/DE3879766T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
DE88109300T 1987-06-12 1988-06-10 Halbleiter Speicherzelle. Expired - Fee Related DE3879766T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62146366A JP2621181B2 (ja) 1987-06-12 1987-06-12 Ｍｉｓ型半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3879766D1 DE3879766D1 (de) 1993-05-06
DE3879766T2 true DE3879766T2 (de) 1993-10-21

Family

ID=15406095

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88109300T Expired - Fee Related DE3879766T2 (de) 1987-06-12 1988-06-10 Halbleiter Speicherzelle.

Country Status (4)

Country Link
US (1) US4897700A (de)
EP (1) EP0294840B1 (de)
JP (1) JP2621181B2 (de)
DE (1) DE3879766T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法
JPH02222571A (ja) * 1989-02-23 1990-09-05 Sharp Corp 半導体記憶装置
DE3931381A1 (de) * 1989-09-20 1991-03-28 Siemens Ag Halbleiterschichtaufbau mit vergrabener verdrahtungsebene, verfahren fuer dessen herstellung und anwendung der vergrabenen verdrahtungsebene als vergrabene zellplatte fuer drams
JPH0457363A (ja) * 1990-06-27 1992-02-25 Nec Corp 半導体メモリ装置
KR930005738B1 (ko) * 1990-10-11 1993-06-24 삼성전자 주식회사 Mist형 다이나믹 랜덤 액세스 메모리셀 및 그의 제조방법
KR930009594B1 (ko) * 1991-01-30 1993-10-07 삼성전자 주식회사 고집적 반도체 메모리장치 및 그 제조방법
TW243541B (de) * 1991-08-31 1995-03-21 Samsung Electronics Co Ltd
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5595928A (en) * 1995-09-18 1997-01-21 Vanguard International Semiconductor Corporation High density dynamic random access memory cell structure having a polysilicon pillar capacitor
JP2002222858A (ja) * 2001-01-25 2002-08-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7229895B2 (en) * 2005-01-14 2007-06-12 Micron Technology, Inc Memory array buried digit line
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
CN108075038A (zh) * 2016-11-11 2018-05-25 中芯国际集成电路制造(上海)有限公司 动态随机存储器及其形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832789B2 (ja) * 1980-07-18 1983-07-15 富士通株式会社 半導体メモリ
JPS594158A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体記憶装置
JPS60225461A (ja) * 1984-04-24 1985-11-09 Oki Electric Ind Co Ltd 半導体ｒａｍ装置の構造およびその製造方法
JPS60253265A (ja) * 1984-05-29 1985-12-13 Toshiba Corp 半導体記憶装置
JPS61140168A (ja) * 1984-12-12 1986-06-27 Toshiba Corp 半導体記憶装置
JPH0673368B2 (ja) * 1985-01-31 1994-09-14 富士通株式会社 半導体記憶装置およびその製造方法
EP0194682B1 (de) * 1985-03-13 1991-01-23 Kabushiki Kaisha Toshiba Halbleiterspeichervorrichtung
JPS61258467A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置
JPS6236853A (ja) * 1985-08-09 1987-02-17 Fujitsu Ltd 半導体装置の製造方法
JPS6286853A (ja) * 1985-10-14 1987-04-21 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2621181B2 (ja) 1997-06-18
US4897700A (en) 1990-01-30
EP0294840A3 (en) 1989-11-29
EP0294840B1 (de) 1993-03-31
EP0294840A2 (de) 1988-12-14
JPS63310162A (ja) 1988-12-19
DE3879766D1 (de) 1993-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee