DE69019414D1 - Halbleiterspeicher mit hoher Zelldichte. - Google Patents

Halbleiterspeicher mit hoher Zelldichte.

Info

Publication number
DE69019414D1
DE69019414D1 DE69019414T DE69019414T DE69019414D1 DE 69019414 D1 DE69019414 D1 DE 69019414D1 DE 69019414 T DE69019414 T DE 69019414T DE 69019414 T DE69019414 T DE 69019414T DE 69019414 D1 DE69019414 D1 DE 69019414D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
cell density
high cell
density
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69019414T
Other languages
English (en)
Other versions
DE69019414T2 (de
Inventor
Donald M Kenney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69019414D1 publication Critical patent/DE69019414D1/de
Publication of DE69019414T2 publication Critical patent/DE69019414T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
DE69019414T 1989-03-27 1990-02-13 Halbleiterspeicher mit hoher Zelldichte. Expired - Lifetime DE69019414T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/329,130 US5001525A (en) 1989-03-27 1989-03-27 Two square memory cells having highly conductive word lines

Publications (2)

Publication Number Publication Date
DE69019414D1 true DE69019414D1 (de) 1995-06-22
DE69019414T2 DE69019414T2 (de) 1996-01-25

Family

ID=23283978

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019414T Expired - Lifetime DE69019414T2 (de) 1989-03-27 1990-02-13 Halbleiterspeicher mit hoher Zelldichte.

Country Status (9)

Country Link
US (1) US5001525A (de)
EP (1) EP0392156B1 (de)
JP (1) JPH07123159B2 (de)
KR (1) KR940000751B1 (de)
CN (1) CN1030742C (de)
BR (1) BR9001375A (de)
CA (1) CA1321834C (de)
DE (1) DE69019414T2 (de)
ES (1) ES2072930T3 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376817A (en) * 1991-07-01 1994-12-27 Micron Technology, Inc. Structure for a semiconductor device comprising conductive trench sidewalls
US7067406B2 (en) * 1997-03-31 2006-06-27 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US6222254B1 (en) * 1997-03-31 2001-04-24 Intel Corporation Thermal conducting trench in a semiconductor structure and method for forming the same
US6271555B1 (en) * 1998-03-31 2001-08-07 International Business Machines Corporation Borderless wordline for DRAM cell
TW399301B (en) * 1998-04-18 2000-07-21 United Microelectronics Corp Manufacturing method of bit line
EP1296369A1 (de) * 2001-09-20 2003-03-26 Infineon Technologies AG Verfahren zur Herstellung von Gateoxyd für Trench Gate DRAM Zellen
US6730540B2 (en) * 2002-04-18 2004-05-04 Tru-Si Technologies, Inc. Clock distribution networks and conductive lines in semiconductor integrated circuits

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US4225945A (en) * 1976-01-12 1980-09-30 Texas Instruments Incorporated Random access MOS memory cell using double level polysilicon
US4462040A (en) * 1979-05-07 1984-07-24 International Business Machines Corporation Single electrode U-MOSFET random access memory
US4271418A (en) * 1979-10-29 1981-06-02 American Microsystems, Inc. VMOS Memory cell and method for making same
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4295924A (en) * 1979-12-17 1981-10-20 International Business Machines Corporation Method for providing self-aligned conductor in a V-groove device
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
EP0180026B1 (de) * 1984-10-31 1992-01-08 Texas Instruments Incorporated DRAM-Zelle und Verfahren
CN1004734B (zh) * 1984-12-07 1989-07-05 得克萨斯仪器公司 动态随机存取存贮器单元(dram)和生产方法
US4673962A (en) * 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4864375A (en) * 1986-02-05 1989-09-05 Texas Instruments Incorporated Dram cell and method
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
US4769786A (en) * 1986-07-15 1988-09-06 International Business Machines Corporation Two square memory cells
US4785337A (en) * 1986-10-17 1988-11-15 International Business Machines Corporation Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes

Also Published As

Publication number Publication date
US5001525A (en) 1991-03-19
KR900015330A (ko) 1990-10-26
ES2072930T3 (es) 1995-08-01
BR9001375A (pt) 1991-04-02
EP0392156A3 (de) 1992-12-30
DE69019414T2 (de) 1996-01-25
KR940000751B1 (ko) 1994-01-28
CN1030742C (zh) 1996-01-17
JPH07123159B2 (ja) 1995-12-25
EP0392156A2 (de) 1990-10-17
JPH02292860A (ja) 1990-12-04
EP0392156B1 (de) 1995-05-17
CN1046062A (zh) 1990-10-10
CA1321834C (en) 1993-08-31

Similar Documents

Publication Publication Date Title
DE3480631D1 (de) Halbleiterstruktur mit uebergitter hoher traegerdichte.
DE3483134D1 (de) Dynamische halbleiterspeicheranordnung mit geteilten speicherzellenbloecken.
DE69121760D1 (de) Halbleiterspeicherzelle
DE68920243D1 (de) Halbleiter-Speicherschaltung.
DE69328639D1 (de) Halbleiterspeicheranordnung mit Ersatzspeicherzellen
DE3582480D1 (de) Halbleitermodulzusammenbau hoher dichte.
DE69022179D1 (de) Halbleiterspeichergeräte mit Serienzugriff.
DE69007827D1 (de) Halbleiter-Speicher.
DE3671124D1 (de) Halbleiterspeicherzelle.
DE3578989D1 (de) Halbleiterspeichergeraet mit schreibepruefoperation.
DE3485555D1 (de) Halbleiterspeicher mit mehrfachniveauspeicherstruktur.
DE3585733D1 (de) Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration.
DE68918193D1 (de) Halbleiterspeicher.
DE3576236D1 (de) Halbleiterspeicheranordnung.
DE3582811D1 (de) E/a-datenschaltung mit hoher integrationsdichte fuer dram.
DE68921900D1 (de) Halbleiterspeicheranordnung mit serieller Zugriffsanordnung.
DE3577367D1 (de) Halbleiterspeicheranordnung.
DE3887284D1 (de) Halbleiterspeicherschaltung mit einem verbesserten Rückschreibschema.
DE3575225D1 (de) Halbleiterspeicheranordnung.
DE3767729D1 (de) Assoziativspeicherzelle.
DE3576754D1 (de) Halbleiterspeicheranordnung.
DE69220465D1 (de) Halbleiteranordnung mit Speicherzelle
DE68923899D1 (de) Halbleiterspeicher.
DE3782103D1 (de) Dynamischer halbleiterspeicher mit leseschema.
DE68915018D1 (de) Halbleiterspeicherschaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8330 Complete renunciation