DE68918177D1 - Feinstruktur-Herstellungsverfahren. - Google Patents

Feinstruktur-Herstellungsverfahren.

Info

Publication number
DE68918177D1
DE68918177D1 DE68918177T DE68918177T DE68918177D1 DE 68918177 D1 DE68918177 D1 DE 68918177D1 DE 68918177 T DE68918177 T DE 68918177T DE 68918177 T DE68918177 T DE 68918177T DE 68918177 D1 DE68918177 D1 DE 68918177D1
Authority
DE
Germany
Prior art keywords
manufacturing process
fine structure
structure manufacturing
fine
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918177T
Other languages
English (en)
Other versions
DE68918177T2 (de
Inventor
Kazuhiko Hashimoto
Taichi Koizumi
Kenji Kawakita
Noboru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE68918177D1 publication Critical patent/DE68918177D1/de
Application granted granted Critical
Publication of DE68918177T2 publication Critical patent/DE68918177T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE68918177T 1988-06-29 1989-06-29 Feinstruktur-Herstellungsverfahren. Expired - Fee Related DE68918177T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16163788A JP2532589B2 (ja) 1988-06-29 1988-06-29 微細パタ―ン形成方法

Publications (2)

Publication Number Publication Date
DE68918177D1 true DE68918177D1 (de) 1994-10-20
DE68918177T2 DE68918177T2 (de) 1995-04-13

Family

ID=15738975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918177T Expired - Fee Related DE68918177T2 (de) 1988-06-29 1989-06-29 Feinstruktur-Herstellungsverfahren.

Country Status (4)

Country Link
US (1) US5030549A (de)
EP (1) EP0348962B1 (de)
JP (1) JP2532589B2 (de)
DE (1) DE68918177T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2956179B2 (ja) * 1990-09-19 1999-10-04 日清紡績株式会社 導電パターンの形成方法
CA2040482C (en) * 1990-04-20 1998-11-10 Toshio Suzuki Photosensitive resin composition and method of forming conductive pattern
US5506091A (en) * 1990-04-20 1996-04-09 Nisshinbo Industries, Inc. Photosensitive resin composition and method of forming conductive pattern
JP2943231B2 (ja) * 1990-04-20 1999-08-30 日清紡績株式会社 導電パターンの形成方法
WO1993007629A1 (en) * 1991-10-04 1993-04-15 Motorola, Inc. Integrated deposited vertical resistor in a sequential multilayer substrate
KR970009858B1 (ko) * 1994-01-12 1997-06-18 엘지반도체 주식회사 다층 레지스트 패턴 형성방법
US5550405A (en) * 1994-12-21 1996-08-27 Advanced Micro Devices, Incorporated Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
JP2006163176A (ja) * 2004-12-09 2006-06-22 Toshiba Corp パターン形成方法及び半導体装置の製造方法
JP4660826B2 (ja) * 2006-08-18 2011-03-30 山栄化学株式会社 レジストパターンの形成方法
JP4974756B2 (ja) * 2007-05-09 2012-07-11 三菱電機株式会社 太陽電池素子の製造方法
US8003488B2 (en) * 2007-09-26 2011-08-23 International Business Machines Corporation Shallow trench isolation structure compatible with SOI embedded DRAM
US9703197B2 (en) * 2013-09-26 2017-07-11 National Institute For Materials Science High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film
JP2015070232A (ja) * 2013-09-30 2015-04-13 株式会社東芝 半導体装置の製造方法及び半導体製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027052A (en) * 1973-05-09 1977-05-31 Bell Telephone Laboratories, Incorporated Fabrication of iron oxide pattern
US3885076A (en) * 1973-05-09 1975-05-20 Bell Telephone Labor Inc Electron beam generated patterns of metal-containing polymers
JPS5752051A (en) * 1980-09-12 1982-03-27 Toshiba Corp Formation of resist pattern
DE3324117A1 (de) * 1983-07-05 1985-01-17 Gebr. Schmid Maschinenfabrik GmbH & Co, 7290 Freudenstadt Verfahren und herstellung gedruckter schaltungen und photolack zur durchfuehrung dieses verfahrens
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
US4512855A (en) * 1984-07-23 1985-04-23 E. I. Du Pont De Nemours And Company Deposition of metals as interlayers within organic polymeric films
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process

Also Published As

Publication number Publication date
JPH0210362A (ja) 1990-01-16
EP0348962B1 (de) 1994-09-14
EP0348962A3 (de) 1992-01-02
EP0348962A2 (de) 1990-01-03
US5030549A (en) 1991-07-09
DE68918177T2 (de) 1995-04-13
JP2532589B2 (ja) 1996-09-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee