JP2015070232A - 半導体装置の製造方法及び半導体製造装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000010410 layer Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000001020 plasma etching Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002344 surface layer Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 34
- 150000002736 metal compounds Chemical class 0.000 claims description 19
- 230000004048 modification Effects 0.000 claims description 14
- 238000012986 modification Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 7
- 238000004380 ashing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】実施形態の半導体装置の製造方法は、基板上にレジスト及び被エッチング層を形成する工程と、Ru又はWを含む金属化合物を供給して前記レジスト上に硬化前処理層を形成する工程と、前記硬化前処理層を用いて、前記レジストの表層に硬化層を形成する工程と、前記硬化層及び前記レジストをマスクにして、反応性イオンエッチングにより前記被エッチング層をエッチングする工程と、を有する。
【選択図】図2
Description
図1は、第1の実施形態の半導体製造装置200の構成の概略を示す図である。半導体製造装置200は、チャンバー10と、ステージ20と、バイアス用電圧印加部30と、ガス供給手段40、ゲートバルブ50と、真空引き手段60と、コイル(プラズマ発生させる機構)70と、原料供給ノズル80と、を備える。
変形例1において、ステップS105で、導入ガスとしてCOガスを添加する。被エッチング層3は、例えば、Siを含む化合物であり、酸化物を含まないものとする。
変形例2において、ステップS103で、図10に示すように原料供給ノズル80からRuを含むガスを供給すると同時に、ウェハWをステージ20で100乃至200℃に加熱してレジストを硬化させるための元素を含む膜5を形成する(ステップS103)。本変形例の被エッチング層3は、変形例1と同様に、例えば、Siを含む化合物であり、酸化物は含まないものとする。また、第1の実施形態では、コイル70でプラズマを発生させることで、原料供給ノズル80から供給された金属化合物を分解して、プラズマCVD法でレジスト4上の全面にレジストを硬化させるための元素を含む膜5を成膜したが、本変形例では、コイル70でプラズマを発生させないものとする。
第2の実施形態の半導体装置の製造方法について説明する。図12は、第2の実施形の半導体製造装置200の構成の概略を示す図である。半導体製造装置200は、チャンバー10内にスプレーノズル90が設けられる。スプレーノズル90は、複数の貫通孔90aが設けられており、原料供給ノズル80から供給される金属化合物を拡散させてチャンバー10内へ導入する。
2 基板
3 被エッチング層
4 レジスト
5 レジストを硬化させるための元素を含む膜(硬化前処理層)
6 Ruを含む層
7 表面が硬化されたレジスト(硬化層)
10 チャンバー
20 ステージ
30 バイアス用電圧印加部
40 ガス供給手段
50 ゲートバルブ
60 真空引き手段
70 コイル(プラズマ発生させる機構)
80 原料供給ノズル
90 スプレーノズル
200 半導体製造装置
W ウェハ
Claims (8)
- (製造方法(基本工程))
基板上にレジスト及び被エッチング層を形成する工程と、
Ru又はWを含む金属化合物を供給して前記レジスト上に硬化前処理層を形成する工程と、
前記硬化前処理層を用いて、前記レジストの表層に硬化層を形成する工程と、
前記硬化層及び前記レジストをマスクにして、反応性イオンエッチングにより前記被エッチング層をエッチングする工程と、
を有する半導体装置の製造方法。 - レジストを除去する工程(酸素プラズマアッシング工程)
前記エッチングをする工程の後、酸素プラズマと前記レジスト及び前記硬化層を反応させて、前記レジスト及び前記硬化層を除去する酸素プラズマアッシング処理工程をさらに有する請求項1に記載の半導体装置の製造方法。 - 前記金属化合物は、有機金属錯体である請求項1又は2に記載の半導体装置の製造方法。
- 金属化合物(材料を限定)
前記金属化合物は、Ru(EtCp)2、RuCpBuCp又はRuCpPrCpである請求項1乃至3のいずれかに記載の半導体装置の製造方法。 - (硬化前処理層の限定)
前記硬化前処理層は、Ru化合物又はW化合物を含む層である請求項1乃至3のいずれかに記載の半導体装置の製造方法。 - (スプレー法)
前記硬化前処理層は、金属化合物を吹掛けて形成する請求項1乃至5のいずれかに記載の半導体装置の製造方法。 - (変形例1)
前記反応性イオンエッチングの際、COを含むガスを用いる請求項1乃至6のいずれかに記載の半導体装置の製造方法。 - チャンバーと、
前記チャンバー内に設けられた半導体基板を保持するステージと、
前記チャンバー内にRu又はWを含む金属化合物を導入するスプレーノズルと、
前記チャンバー内に不活性ガスを導入するガス供給手段と、
前記チャンバー内の磁場を制御し、プラズマ発生させる機構と、
前記基板にバイアス印加する電圧印加部と、
を有する半導体製造装置。
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CN110858541A (zh) * | 2018-08-24 | 2020-03-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
JPWO2021161368A1 (ja) * | 2020-02-10 | 2021-08-19 |
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KR102496037B1 (ko) | 2016-01-20 | 2023-02-06 | 삼성전자주식회사 | 플라즈마 식각 방법 및 장치 |
JP6859088B2 (ja) * | 2016-12-14 | 2021-04-14 | エイブリック株式会社 | 半導体装置の製造方法 |
US10950444B2 (en) * | 2018-01-30 | 2021-03-16 | Tokyo Electron Limited | Metal hard mask layers for processing of microelectronic workpieces |
JP7037397B2 (ja) | 2018-03-16 | 2022-03-16 | キオクシア株式会社 | 基板処理装置、基板処理方法、および半導体装置の製造方法 |
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US9257299B2 (en) | 2016-02-09 |
US20150093903A1 (en) | 2015-04-02 |
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