JP4660826B2 - レジストパターンの形成方法 - Google Patents
レジストパターンの形成方法 Download PDFInfo
- Publication number
- JP4660826B2 JP4660826B2 JP2007201223A JP2007201223A JP4660826B2 JP 4660826 B2 JP4660826 B2 JP 4660826B2 JP 2007201223 A JP2007201223 A JP 2007201223A JP 2007201223 A JP2007201223 A JP 2007201223A JP 4660826 B2 JP4660826 B2 JP 4660826B2
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- Prior art keywords
- resist film
- pattern
- resist
- photocurable
- film
- Prior art date
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- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical group O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- QDLAGTHXVHQKRE-UHFFFAOYSA-N lichenxanthone Natural products COC1=CC(O)=C2C(=O)C3=C(C)C=C(OC)C=C3OC2=C1 QDLAGTHXVHQKRE-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000000594 mannitol Substances 0.000 description 1
- 235000010355 mannitol Nutrition 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- DFENKTCEEGOWLB-UHFFFAOYSA-N n,n-bis(methylamino)-2-methylidenepentanamide Chemical compound CCCC(=C)C(=O)N(NC)NC DFENKTCEEGOWLB-UHFFFAOYSA-N 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000005702 oxyalkylene group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- LXTZRIBXKVRLOA-UHFFFAOYSA-N padimate a Chemical compound CCCCCOC(=O)C1=CC=C(N(C)C)C=C1 LXTZRIBXKVRLOA-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- XENCWZQJRLUUME-UHFFFAOYSA-N phenyl-[phenyl-(2,3,4-trimethylphenyl)phosphoryl]methanone Chemical class CC1=C(C(=C(C=C1)P(C1=CC=CC=C1)(C(C1=CC=CC=C1)=O)=O)C)C XENCWZQJRLUUME-UHFFFAOYSA-N 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- FSDNTQSJGHSJBG-UHFFFAOYSA-N piperidine-4-carbonitrile Chemical compound N#CC1CCNCC1 FSDNTQSJGHSJBG-UHFFFAOYSA-N 0.000 description 1
- 125000005592 polycycloalkyl group Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005650 polypropylene glycol diacrylate Polymers 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical group O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- OKYDCMQQLGECPI-UHFFFAOYSA-N thiopyrylium Chemical class C1=CC=[S+]C=C1 OKYDCMQQLGECPI-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0551—Exposure mask directly printed on the PCB
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0577—Double layer of resist having the same pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/066—Transfer laminating of insulating material, e.g. resist as a whole layer, not as a pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
また、第2の光硬化性レジスト膜に対し、第1の感応波長域を遮断する機能、水溶性、及び可視光感光性を容易に付加することが可能となる。
図1に本発明のレジストパターンの形成方法を用いて製造されたソルダーレジストパターンの一例を示す。
成分(I−A)としては、感光基と酸性基の両基を備えたもの、たとえば、エポキシ樹脂の不飽和カルボン酸付加物に酸無水物を反応させて得られるもの(以下「成分(I−A−i)」とも言う。)が挙げられる。
成分(II−B)としては、感光基の個数が2個以上(特に3〜6個)のものが、現像耐性の点から好ましい。更に、常温にて液体であるもの、特に成分(II−A)の溶剤となるものが、塗布性の面から好ましい。具体的には、そのような成分(II−B)としては、感光基を3〜6個有するもの、特にジペンタエリトールヘキサ(メタ)アクリレート等が特に好ましい。
求められた歪みの値をレーザー露光の制御装置に入力し、基準のレーザー照射制御データに反映させ、レーザー照射位置を調整して図2(d)のようにレーザー露光を行う。
酸現像性材料としては、ポリマー類及び/又はオリゴマー類と、モノマー類及び/又は有機溶剤とから少なくとも成る樹脂組成物が、以下の成分(i)又は成分(ii)のみからなるもの、又は、成分(i)及び成分(ii)からなるものが挙げられる。
成分(i)とは、ポリマー類及び/又はオリゴマー類が塩基性構造を有するものであり、成分(ii)とは、ポリマー類、オリゴマー類、及びモノマー類の少なくとも何れかが塩基性基を有するものである。
酸現像性材料には、前記材料I及びIIにおいて例示した添加剤を一以上配合していてもよい。
酸現像液としては、例えば有機酸(リンゴ酸等)、無機酸(燐酸等)等が挙げられる。
カバーフィルムをレジスト膜とは別に設ける場合や、カバーフィルムを用いない場合には、雰囲気によるレジスト膜の品質劣化への対策が必要である。
・実施例1
先ず、均一分散した下記配合組成1)の樹脂組成物を、厚さ100μmのPEフィルム14上に、150メッシュポリエステルスクリーンを用い印刷し、80℃で15分乾燥した。こうして、PEフィルム14上に、第2の光硬化性レジスト膜8を形成した。その後、この第2の光硬化性レジスト膜8の上面に、厚さ25μmのPETカバーフィルム6を積層した。こうして、PEフィルム14、第2の光硬化性レジスト膜8、及びPETカバーフィルム6から成る3層体(図6(a)参照)を作製した。
次に、上記プリント配線板3上の第1の光硬化性レジスト膜7上に、PETカバーフィルム6を介して前記3層体を積層した。そして、図6(c)に示すこの積層体の最上層にあるPEフィルム14を剥離し、第2の光硬化性レジスト膜8を露出させた(図6(d)及び図7(a)参照)。これに432nmのレーザー光10をレーザー照射位置15に照射し(図7(a)参照)所定のパターンを描画した(図6(e)参照)。描画時間は20秒であった。次いで、流水で20秒間現像し、第2の光硬化レジストパターン11を形成した(図7(b)参照)。
このようにして、第2の光硬化レジストパターン11とは逆のパターンを持つ第1の光硬化レジストパターン5が被覆されたプリント配線板が得られた(図6(i)、図7(c)参照)。
アクリル酸エステルオリゴマー(日本化薬製「ZAA−178」)100重量部,ジペンタエリスリトールヘキサアクリレート(モノマー)25重量部,トリメチロールプロパントリアクリレート(モノマー)10重量部,トリアジン系反応開始剤(三和ケミカル製「TME−トリアジン」)2.5重量部,ビスケトクマリン(増感色素、山本化成製「KCD」)0.15重量部,超微粒子酸化チタン(UV遮蔽剤、平均粒径0.03μm、石原産業製「TTO−55」)20重量部,ポリジメチルシロキサン(消泡剤、信越シリコーン製「KS−66」)0.5重量部。
テトラヒドロフタル酸無水物変性トリフェニルメタン型エポキシアクリレートオリゴマー(日本化薬製「TCR−1041」)150重量部,ジペンタエリスリトールヘキサアクリレート(モノマー)25重量部,2−メチル−1−[4−(メチルチオ)フェニル]−2−モルフォリノプロパン−1−オン(チバ・スペシャルティ・ケミカルズ社製「イルガキュア907」)20重量部,トリグリシジルイソシアヌレート(日産化学製「TEPIC」)30重量部,メラミン(日産化学製メラミン)4重量部、硫酸バリウム(堺化学製「バリファイン100」)150重量部,ポリジメチルシロキサン(消泡剤、信越シリコーン製「KS−66」)0.5重量部、緑色顔料0.05重量部。
以下、比較例1を図8に基づいて説明する。
配線パターン2形成済みのプリント配線板3上に、上記配合組成2)のアルカリ現像型のソルダーレジスト剤をスクリーン印刷し、第1の光硬化性レジスト膜7を形成した。
次いで、この第1の光硬化性レジスト膜7に対し、実施例1の第1の光硬化レジストパターン5と同じパターン領域に、365nmの紫外線レーザー16を、描画(照射)した。描画時間は2分30秒であった。
この比較例1では、紫外線レーザー16により描画したので位置精度は優れていたが、描画時間が2分30秒と長く、生産性に劣った。
以下、比較例2を図9に基づいて説明する。
配線パターン2形成済みのプリント配線板3上に、前記配合組成2)のアルカリ現像型のソルダーレジスト剤をスクリーン印刷し、第1の光硬化性レジスト膜7を形成した。
次いで、この第1の光硬化性レジスト膜7上に、実施例1の第2の光硬化レジストパターン11と同じパターンを持つネガフィルム17を密着させた。そして、このネガフィルム17を介して、高圧水銀灯により、第1の光硬化性レジスト膜7全面に紫外線12を照射した。照射時間は30秒であった。
その後、30℃の1%炭酸ナトリウム水溶液にて第1の光硬化性レジスト膜7の非露光部分13を現像除去して、第1の光硬化レジストパターン5が被覆されたプリント配線板が得られた(図9(c)参照)。
2 配線パターン
3 プリント配線板
4 開口
5 ソルダーレジストパターン
6 カバーフィルム
7 ソルダーレジスト膜
8 レジスト膜
9 基準点
10 可視光レーザー
11 レジストパターン
12 紫外線
13 非露光部分(非硬化部分)
14 PEフィルム
15 照射予定位置
16 紫外線レーザー
17 ネガフィルム
Claims (9)
- 半導体チップ或いは配線基板の配線パターン上に第1の感応波長域の波長の光に感応する第1の光硬化性レジスト膜を形成する工程と、
前記第1の光硬化性レジスト膜の上側に、第1の感応波長域の波長の光を遮断し、且つ第2の感応波長域の波長の光に感応すると共に、第1の光硬化性レジスト膜とは異なる現像液によって現像される材料からなる第2の光硬化性レジスト膜を形成する工程と、
第2の感応波長域の波長の光を含むレーザーを第2の光硬化性レジスト膜のマスクパターンとなる領域に走査して露光する工程と、
第1の光硬化性レジスト膜を現像しない現像液で前記第2の光硬化性レジスト膜を現像してマスクパターンを形成する工程と、
前記第1の感応波長域の波長の光で、前記マスクパターンをマスクとして、前記第1の光硬化性レジスト膜をパターン露光する工程と、
前記第1の光硬化性レジスト膜を現像して、前記半導体チップ或いは配線パターンが形成された基板上にレジストパターンを形成する工程を有し、
第2の光硬化性レジスト膜が、酸化チタン微粒子、炭酸カルシウム微粒子、及び酸化亜鉛微粒子の内の少なくとも1種を含有したものであり、かつ、
該含有された微粒子が平均粒径0.01μm〜0.05μmを有することを特徴とするレジストパターンの形成方法。 - 請求項1に記載のレジストパターンの形成方法において、
前記第1の光硬化性レジスト膜の上側に第2の光硬化性レジスト膜を形成する際に、前記第2の光硬化性レジスト膜を第1の感応波長域の波長の光を透過するカバーフィルムを介して形成し、
第1の光硬化性レジスト膜を現像する工程では、最初に前記カバーフィルムを剥がすことにより、マスクパターンを除去することを特徴とするレジストパターンの形成方法。 - 請求項2に記載のレジストパターンの形成方法において、
前記カバーフィルムと第1の光硬化性レジスト膜とを積層せしめた積層体を、前記配線パターン上に設けた後に、
前記カバーフィルム上に第2の光硬化性レジスト膜を形成することを特徴とするレジストパターンの形成方法。 - 請求項1〜3の何れか一つに記載のレジストパターンの形成方法において、
第2の感応波長域を含むレーザーをマスクパターンとなる領域に走査して前記第2の光硬化性レジスト膜の前記マスクパターンとなる領域を露光する際に、
予め各配線パターンに対し位置ずれ補正を行ってから、第2の感応波長域の波長の光を含むレーザーを走査し、各配線パターン上にマスクパターンを形成することを特徴とするレジストパターンの形成方法。 - 請求項1〜4の何れか一つに記載のレジストパターンの形成方法において、
第1の光硬化性レジスト膜として紫外線感光性を有する材料を用い、前記第1の光硬化性レジスト膜を紫外線により露光し、第2の光硬化性レジスト膜として可視光感光性を有する材料を用い、前記第2の光硬化性レジスト膜を可視光レーザーにより露光することを特徴とするレジストパターンの形成方法。 - 請求項1〜5の何れか一つに記載のレジストパターンの形成方法において、
第2の光硬化性レジスト膜に水現像が可能な材料を用い、
第2の現像液として水を用いることを特徴とするレジストパターンの形成方法。 - 請求項1〜6の何れか一つに記載のレジストパターンの形成方法において、
第1の光硬化性レジスト膜がソルダーレジストであることを特徴とするレジストパターンの形成方法。 - 請求項1〜6の何れか一つに記載のレジストパターンの形成方法において、
第1の光硬化性レジスト膜がめっきレジストであることを特徴とするレジストパターンの形成方法。 - 請求項1〜6の何れか一つに記載のレジストパターンの形成方法において、
第1の光硬化性レジスト膜がエッチングレジストであることを特徴とするレジストパターンの形成方法。
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