TWI341553B - Method of forming resist pattern - Google Patents

Method of forming resist pattern

Info

Publication number
TWI341553B
TWI341553B TW096128962A TW96128962A TWI341553B TW I341553 B TWI341553 B TW I341553B TW 096128962 A TW096128962 A TW 096128962A TW 96128962 A TW96128962 A TW 96128962A TW I341553 B TWI341553 B TW I341553B
Authority
TW
Taiwan
Prior art keywords
resist pattern
forming resist
forming
pattern
resist
Prior art date
Application number
TW096128962A
Other languages
English (en)
Chinese (zh)
Other versions
TW200811921A (en
Inventor
Kazunori Kitamura
Kiyoshi Sato
Eiichi Inoue
Original Assignee
San Ei Kagaku Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by San Ei Kagaku Co filed Critical San Ei Kagaku Co
Publication of TW200811921A publication Critical patent/TW200811921A/zh
Application granted granted Critical
Publication of TWI341553B publication Critical patent/TWI341553B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/0551—Exposure mask directly printed on the PCB
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0562—Details of resist
    • H05K2203/0577—Double layer of resist having the same pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/06—Lamination
    • H05K2203/066—Transfer laminating of insulating material, e.g. resist as a whole layer, not as a pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Architecture (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW096128962A 2006-08-18 2007-08-07 Method of forming resist pattern TWI341553B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006223568 2006-08-18
JP2006276892 2006-10-10
JP2007201223A JP4660826B2 (ja) 2006-08-18 2007-08-01 レジストパターンの形成方法

Publications (2)

Publication Number Publication Date
TW200811921A TW200811921A (en) 2008-03-01
TWI341553B true TWI341553B (en) 2011-05-01

Family

ID=38955113

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128962A TWI341553B (en) 2006-08-18 2007-08-07 Method of forming resist pattern

Country Status (5)

Country Link
JP (1) JP4660826B2 (ja)
KR (1) KR100892949B1 (ja)
CN (1) CN101126893B (ja)
DE (1) DE102007038183B4 (ja)
TW (1) TWI341553B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101139561B1 (ko) * 2007-05-11 2012-05-02 히다치 가세고교 가부시끼가이샤 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성 방법 및 프린트 배선판의 제조 방법
JP5449688B2 (ja) * 2008-03-26 2014-03-19 太陽ホールディングス株式会社 光硬化性熱硬化性樹脂組成物、そのドライフィルム及び硬化物並びにそれらを用いたプリント配線板
KR101383892B1 (ko) * 2008-11-24 2014-04-10 삼성테크윈 주식회사 릴투릴형의 회로 기판과, 이의 제조 방법
KR101530265B1 (ko) * 2009-03-12 2015-06-22 해성디에스 주식회사 Ｐｓｒ이 사용되는 인쇄회로기판의 제조 방법
JP5316901B2 (ja) * 2009-12-07 2013-10-16 山栄化学株式会社 プリント配線板及びその製造方法
JP5427632B2 (ja) * 2010-02-08 2014-02-26 太陽ホールディングス株式会社 積層構造体及びそれに用いる感光性ドライフィルム
CN103299242B (zh) * 2010-12-28 2016-08-10 太阳油墨制造株式会社 光固化性树脂组合物、其干膜和固化物以及使用它们的印刷电路板
JP2012256636A (ja) * 2011-06-07 2012-12-27 Taiyo Holdings Co Ltd めっきレジスト用樹脂組成物および多層プリント配線板
CN107969077B (zh) * 2013-05-22 2020-02-18 三菱制纸株式会社 布线基板的制造方法
JP5660691B2 (ja) * 2013-12-02 2015-01-28 太陽ホールディングス株式会社 積層構造体の製造方法及び積層構造体
JP5775943B2 (ja) * 2014-02-13 2015-09-09 太陽ホールディングス株式会社 ソルダーレジスト層及びプリント配線板
JP6519134B2 (ja) * 2014-09-25 2019-05-29 日立化成株式会社 感光性樹脂組成物
JP6668004B2 (ja) * 2015-06-09 2020-03-18 カンタツ株式会社 回路パターン製造装置、回路パターン製造方法および回路パターン製造プログラム
KR101952745B1 (ko) * 2016-09-22 2019-02-27 주식회사 디텍 자외선 경화형 플렉시블 솔더 레지스터 잉크 조성물
CN106982514B (zh) * 2017-05-09 2020-09-18 南方科技大学 一种单层多材质导电线路板及制备方法
JP6605103B2 (ja) * 2017-09-27 2019-11-13 株式会社タムラ製作所 ソルダーレジスト膜のパターン形成方法、および電子基板の製造方法
CN108490738B (zh) * 2018-03-22 2020-09-29 深圳市华星光电技术有限公司 黑色矩阵材料组合物及黑色矩阵的制作方法
CN109243984B (zh) * 2018-09-26 2020-03-10 西安明科微电子材料有限公司 一种igbt铝碳化硅散热基板的阻焊方法
KR102362335B1 (ko) * 2019-12-05 2022-02-14 한국다이요잉크 주식회사 에칭 레지스트 잉크 조성물
CN114624843B (zh) * 2022-03-04 2024-04-30 上海慧希电子科技有限公司 光学器件制作方法
NL2032627B1 (en) * 2022-07-28 2023-11-10 Zhuhai Nengdong Tech Optical Industry Co Ltd Resistance welding dry film photoresist as well as preparation method use thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2532589B2 (ja) * 1988-06-29 1996-09-11 松下電器産業株式会社 微細パタ―ン形成方法
DE19706495B4 (de) * 1996-07-05 2006-04-27 Mitsubishi Denki K.K. Verfahren zur Herstellung einer Halbleitervorrichtung unter Verwendung fein getrennter Resistmuster
JP3373147B2 (ja) * 1998-02-23 2003-02-04 シャープ株式会社 フォトレジスト膜及びそのパターン形成方法
JP2001201870A (ja) * 1999-08-03 2001-07-27 Kansai Paint Co Ltd パターン形成用積層体
JP2001242618A (ja) * 2000-02-28 2001-09-07 Kansai Paint Co Ltd パターン形成方法
JP3952795B2 (ja) * 2002-02-07 2007-08-01 ソニー株式会社 レジスト膜のパターン形成方法
US6764808B2 (en) * 2002-02-27 2004-07-20 Advanced Micro Devices, Inc. Self-aligned pattern formation using wavelenghts

Also Published As

Publication number Publication date
CN101126893B (zh) 2011-04-27
CN101126893A (zh) 2008-02-20
JP2008116910A (ja) 2008-05-22
KR100892949B1 (ko) 2009-04-09
TW200811921A (en) 2008-03-01
DE102007038183B4 (de) 2020-09-10
JP4660826B2 (ja) 2011-03-30
DE102007038183A1 (de) 2008-02-21
KR20080016462A (ko) 2008-02-21

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