DE3882557D1 - Dram-zelle und herstellungsverfahren. - Google Patents
Dram-zelle und herstellungsverfahren.Info
- Publication number
- DE3882557D1 DE3882557D1 DE8888101540T DE3882557T DE3882557D1 DE 3882557 D1 DE3882557 D1 DE 3882557D1 DE 8888101540 T DE8888101540 T DE 8888101540T DE 3882557 T DE3882557 T DE 3882557T DE 3882557 D1 DE3882557 D1 DE 3882557D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- dram cell
- dram
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/026,356 US4830978A (en) | 1987-03-16 | 1987-03-16 | Dram cell and method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3882557D1 true DE3882557D1 (de) | 1993-09-02 |
DE3882557T2 DE3882557T2 (de) | 1993-12-23 |
Family
ID=21831344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88101540T Expired - Fee Related DE3882557T2 (de) | 1987-03-16 | 1988-02-03 | DRAM-Zelle und Herstellungsverfahren. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4830978A (de) |
EP (1) | EP0282716B1 (de) |
JP (1) | JP2643255B2 (de) |
KR (1) | KR890013774A (de) |
CN (1) | CN1011369B (de) |
DE (1) | DE3882557T2 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200353A (en) * | 1987-06-29 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having trench capacitor |
JPH01125858A (ja) * | 1987-11-10 | 1989-05-18 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US4942554A (en) * | 1987-11-26 | 1990-07-17 | Siemens Aktiengesellschaft | Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same |
US5014099A (en) * | 1988-05-26 | 1991-05-07 | Texas Instruments Incorporated | Dynamic RAM cell with trench capacitor and trench transistor |
US5103276A (en) * | 1988-06-01 | 1992-04-07 | Texas Instruments Incorporated | High performance composed pillar dram cell |
US5106776A (en) * | 1988-06-01 | 1992-04-21 | Texas Instruments Incorporated | Method of making high performance composed pillar dRAM cell |
US5104481A (en) * | 1988-09-28 | 1992-04-14 | Lasa Industries, Inc. | Method for fabricating laser generated I.C. masks |
US5346834A (en) * | 1988-11-21 | 1994-09-13 | Hitachi, Ltd. | Method for manufacturing a semiconductor device and a semiconductor memory device |
US5049518A (en) * | 1988-12-20 | 1991-09-17 | Matsushita Electric Industrial Co., Ltd. | Method of making a trench dram cell |
US5028980A (en) * | 1988-12-21 | 1991-07-02 | Texas Instruments Incorporated | Trench capacitor with expanded area |
US4958212A (en) * | 1988-12-30 | 1990-09-18 | Texas Instruments Incorporated | Trench memory cell |
JPH02206175A (ja) * | 1989-02-06 | 1990-08-15 | Fuji Electric Co Ltd | Mos型半導体装置 |
US5053350A (en) * | 1989-03-23 | 1991-10-01 | Grumman Aerospace Corporation | Method of making trench MOSFET capacitor cell for analog signal processing |
WO1990011619A1 (en) * | 1989-03-23 | 1990-10-04 | Grumman Aerospace Corporation | Single trench mosfet-capacitor cell for analog signal processing |
US4978634A (en) * | 1989-07-25 | 1990-12-18 | Texas Instruments, Incorporated | Method of making trench DRAM cell with stacked capacitor and buried lateral contact |
US4942137A (en) * | 1989-08-14 | 1990-07-17 | Motorola, Inc. | Self-aligned trench with selective trench fill |
US5064777A (en) * | 1990-06-28 | 1991-11-12 | International Business Machines Corporation | Fabrication method for a double trench memory cell device |
US4988637A (en) * | 1990-06-29 | 1991-01-29 | International Business Machines Corp. | Method for fabricating a mesa transistor-trench capacitor memory cell structure |
US5096849A (en) * | 1991-04-29 | 1992-03-17 | International Business Machines Corporation | Process for positioning a mask within a concave semiconductor structure |
US5156992A (en) * | 1991-06-25 | 1992-10-20 | Texas Instruments Incorporated | Process for forming poly-sheet pillar transistor DRAM cell |
US5198383A (en) * | 1991-06-25 | 1993-03-30 | Texas Instruments Incorporated | Method of fabricating a composed pillar transistor DRAM Cell |
US5214603A (en) * | 1991-08-05 | 1993-05-25 | International Business Machines Corporation | Folded bitline, ultra-high density dynamic random access memory having access transistors stacked above trench storage capacitors |
WO1993017452A1 (en) * | 1992-02-28 | 1993-09-02 | Lasa Industries, Inc. | Laser generated i.c. mask |
US5365097A (en) * | 1992-10-05 | 1994-11-15 | International Business Machines Corporation | Vertical epitaxial SOI transistor, memory cell and fabrication methods |
US5641694A (en) * | 1994-12-22 | 1997-06-24 | International Business Machines Corporation | Method of fabricating vertical epitaxial SOI transistor |
US5529944A (en) * | 1995-02-02 | 1996-06-25 | International Business Machines Corporation | Method of making cross point four square folded bitline trench DRAM cell |
KR100209212B1 (ko) | 1996-10-22 | 1999-07-15 | 김영환 | 반도체메모리장치및그제조방법 |
US5858866A (en) * | 1996-11-22 | 1999-01-12 | International Business Machines Corportation | Geometrical control of device corner threshold |
DE69834886T2 (de) * | 1997-09-30 | 2007-05-24 | Infineon Technologies Ag | Vertikaler Transistor implementiert in einer Speicherzelle mit Grabenkondensator |
US6236079B1 (en) | 1997-12-02 | 2001-05-22 | Kabushiki Kaisha Toshiba | Dynamic semiconductor memory device having a trench capacitor |
TW409408B (en) * | 1998-03-31 | 2000-10-21 | Siemens Ag | Method and apparatus having improved control of a buried strap in trench capacitors |
JP3214449B2 (ja) * | 1998-06-12 | 2001-10-02 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US6828191B1 (en) * | 1998-06-15 | 2004-12-07 | Siemens Aktiengesellschaft | Trench capacitor with an insulation collar and method for producing a trench capacitor |
DE19845058A1 (de) * | 1998-09-30 | 2000-04-13 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
JP3205306B2 (ja) * | 1998-12-08 | 2001-09-04 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US6331459B1 (en) * | 1999-02-18 | 2001-12-18 | Infineon Technologies Ag | Use of dummy poly spacers and divot fill techniques for DT-aligned processing after STI formation for advanced deep trench capacitor DRAM |
US6204140B1 (en) * | 1999-03-24 | 2001-03-20 | Infineon Technologies North America Corp. | Dynamic random access memory |
DE19930748C2 (de) * | 1999-07-02 | 2001-05-17 | Infineon Technologies Ag | Verfahren zur Herstellung von EEPROM- und DRAM-Grabenspeicherzellbereichen auf einem Chip |
US6426252B1 (en) * | 1999-10-25 | 2002-07-30 | International Business Machines Corporation | Silicon-on-insulator vertical array DRAM cell with self-aligned buried strap |
US6281539B1 (en) * | 2000-03-31 | 2001-08-28 | International Business Machines Corporation | Structure and process for 6F2 DT cell having vertical MOSFET and large storage capacitance |
US6288422B1 (en) * | 2000-03-31 | 2001-09-11 | International Business Machines Corporation | Structure and process for fabricating a 6F2 DRAM cell having vertical MOSFET and large trench capacitance |
US6573137B1 (en) | 2000-06-23 | 2003-06-03 | International Business Machines Corporation | Single sided buried strap |
US6339241B1 (en) | 2000-06-23 | 2002-01-15 | International Business Machines Corporation | Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch |
JP2003031686A (ja) * | 2001-07-16 | 2003-01-31 | Sony Corp | 半導体記憶装置およびその製造方法 |
EP1296369A1 (de) * | 2001-09-20 | 2003-03-26 | Infineon Technologies AG | Verfahren zur Herstellung von Gateoxyd für Trench Gate DRAM Zellen |
KR100454072B1 (ko) * | 2001-12-24 | 2004-10-26 | 동부전자 주식회사 | 반도체소자 및 그 제조방법 |
DE10208249B4 (de) * | 2002-02-26 | 2006-09-14 | Infineon Technologies Ag | Halbleiterspeicher mit vertikalem Auswahltransistor |
US6894336B2 (en) * | 2002-06-12 | 2005-05-17 | Infineon Technologies Ag | Vertical access transistor with curved channel |
CN1324671C (zh) * | 2002-09-06 | 2007-07-04 | 旺宏电子股份有限公司 | 波浪状电容器及其制造方法 |
DE10321742A1 (de) | 2003-05-14 | 2004-12-09 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Isoliergraben und Feldeffekttransistor sowie Herstellungsverfahren |
WO2007027169A2 (en) * | 2005-08-30 | 2007-03-08 | University Of South Florida | Method of manufacturing silicon topological capacitors |
US7232719B2 (en) * | 2005-03-28 | 2007-06-19 | Promos Technologies Inc. | Memories having a charge storage node at least partially located in a trench in a semiconductor substrate and electrically coupled to a source/drain region formed in the substrate |
US7262095B1 (en) * | 2005-06-07 | 2007-08-28 | Spansion Llc | System and method for reducing process-induced charging |
US7435681B2 (en) * | 2006-05-09 | 2008-10-14 | Macronix International Co., Ltd. | Methods of etching stacks having metal layers and hard mask layers |
TWI405246B (zh) * | 2009-12-29 | 2013-08-11 | Taiwan Memory Corp | 半導體溝槽製程 |
CN102130063B (zh) * | 2010-01-13 | 2014-03-12 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
US9129945B2 (en) * | 2010-03-24 | 2015-09-08 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
CN113517288B (zh) * | 2020-04-10 | 2024-03-29 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2706155A1 (de) * | 1977-02-14 | 1978-08-17 | Siemens Ag | In integrierter technik hergestellter elektronischer speicher |
DE2737073C3 (de) * | 1977-08-17 | 1981-09-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle |
JPS55133574A (en) * | 1979-04-05 | 1980-10-17 | Nec Corp | Insulated gate field effect transistor |
US4546367A (en) * | 1982-06-21 | 1985-10-08 | Eaton Corporation | Lateral bidirectional notch FET with extended gate insulator |
JPS59181045A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体装置 |
US4651184A (en) * | 1984-08-31 | 1987-03-17 | Texas Instruments Incorporated | Dram cell and array |
US4683486A (en) * | 1984-09-24 | 1987-07-28 | Texas Instruments Incorporated | dRAM cell and array |
DE3585136D1 (de) * | 1984-10-31 | 1992-02-20 | Texas Instruments Inc | Dram-zelle und verfahren. |
CN1004734B (zh) * | 1984-12-07 | 1989-07-05 | 得克萨斯仪器公司 | 动态随机存取存贮器单元(dram)和生产方法 |
JPS61150366A (ja) * | 1984-12-25 | 1986-07-09 | Nec Corp | Mis型メモリ−セル |
US4673962A (en) * | 1985-03-21 | 1987-06-16 | Texas Instruments Incorporated | Vertical DRAM cell and method |
JPH0682800B2 (ja) * | 1985-04-16 | 1994-10-19 | 株式会社東芝 | 半導体記憶装置 |
US4704368A (en) * | 1985-10-30 | 1987-11-03 | International Business Machines Corporation | Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor |
-
1987
- 1987-03-16 US US07/026,356 patent/US4830978A/en not_active Expired - Lifetime
-
1988
- 1988-02-03 EP EP88101540A patent/EP0282716B1/de not_active Expired - Lifetime
- 1988-02-03 DE DE88101540T patent/DE3882557T2/de not_active Expired - Fee Related
- 1988-02-12 KR KR1019880001361A patent/KR890013774A/ko not_active Application Discontinuation
- 1988-03-01 CN CN88101174A patent/CN1011369B/zh not_active Expired
- 1988-03-15 JP JP63061750A patent/JP2643255B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS63308370A (ja) | 1988-12-15 |
CN1011369B (zh) | 1991-01-23 |
KR890013774A (ko) | 1989-09-26 |
US4830978A (en) | 1989-05-16 |
JP2643255B2 (ja) | 1997-08-20 |
DE3882557T2 (de) | 1993-12-23 |
EP0282716A1 (de) | 1988-09-21 |
EP0282716B1 (de) | 1993-07-28 |
CN88101174A (zh) | 1988-12-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |