JPS62263678A - 表面下ツエナ−・ダイオ−ド - Google Patents
表面下ツエナ−・ダイオ−ドInfo
- Publication number
- JPS62263678A JPS62263678A JP62026184A JP2618487A JPS62263678A JP S62263678 A JPS62263678 A JP S62263678A JP 62026184 A JP62026184 A JP 62026184A JP 2618487 A JP2618487 A JP 2618487A JP S62263678 A JPS62263678 A JP S62263678A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- peripheral portion
- lightly doped
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims description 61
- 239000012535 impurity Substances 0.000 claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000000926 separation method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LZYIDMKXGSDQMT-UHFFFAOYSA-N arsenic dioxide Chemical compound [O][As]=O LZYIDMKXGSDQMT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Soft Magnetic Materials (AREA)
- Glass Compositions (AREA)
- Led Device Packages (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US859454 | 1986-05-05 | ||
US06/859,454 US4683483A (en) | 1986-05-05 | 1986-05-05 | Subsurface zener diode and method of making |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62263678A true JPS62263678A (ja) | 1987-11-16 |
Family
ID=25330971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62026184A Pending JPS62263678A (ja) | 1986-05-05 | 1987-02-06 | 表面下ツエナ−・ダイオ−ド |
Country Status (5)
Country | Link |
---|---|
US (1) | US4683483A (fr) |
JP (1) | JPS62263678A (fr) |
DE (1) | DE3714790A1 (fr) |
FR (1) | FR2598259B1 (fr) |
GB (1) | GB2191038B (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4742021A (en) * | 1985-05-05 | 1988-05-03 | Burr-Brown Corporation | Subsurface zener diode and method of making |
EP0314399A3 (fr) * | 1987-10-30 | 1989-08-30 | Precision Monolithics Inc. | Diode zener enterrée et procédé pour sa fabrication |
US4910158A (en) * | 1987-11-23 | 1990-03-20 | Hughes Aircraft Company | Zener diode emulation and method of forming the same |
JP2570022B2 (ja) * | 1991-09-20 | 1997-01-08 | 株式会社日立製作所 | 定電圧ダイオード及びそれを用いた電力変換装置並びに定電圧ダイオードの製造方法 |
US5929502A (en) * | 1992-01-16 | 1999-07-27 | Harris Corporation | Level shifter stage with punch through diode |
FR2702308B1 (fr) * | 1993-03-01 | 1995-05-24 | Sgs Thomson Microelectronics | Diode à avalanche dans un circuit intégré bipolaire. |
US5756387A (en) * | 1994-12-30 | 1998-05-26 | Sgs-Thomson Microelectronics S.R.L. | Method for forming zener diode with high time stability and low noise |
US5883414A (en) * | 1996-02-06 | 1999-03-16 | Harris Corporation | Electrostatic discharge protection device |
US6365951B1 (en) * | 1998-08-13 | 2002-04-02 | Eugene Robert Worley | Methods on constructing an avalanche light emitting diode |
US6417527B1 (en) * | 1999-10-12 | 2002-07-09 | Matsushita Electric Industrial Co., Ltd. | Diode, method for fabricating the diode, and coplanar waveguide |
EP1191598B1 (fr) * | 2000-01-18 | 2007-12-19 | Siemens Schweiz AG | Procédé de fabrication d'un photodétecteur à semiconducteur |
DE10159498A1 (de) * | 2001-12-04 | 2003-06-12 | Bosch Gmbh Robert | Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung |
US6605859B1 (en) | 2002-06-27 | 2003-08-12 | Texas Instruments Incorporated | Buried Zener diode structure and method of manufacture |
KR101146972B1 (ko) * | 2005-03-16 | 2012-05-22 | 페어차일드코리아반도체 주식회사 | 고내압 다이오드를 갖는 고전압 집적회로 장치 |
JP2006352039A (ja) * | 2005-06-20 | 2006-12-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US20070200136A1 (en) * | 2006-02-28 | 2007-08-30 | Ronghua Zhu | Isolated zener diodes |
US7626243B2 (en) * | 2006-08-04 | 2009-12-01 | Advanced Analogic Technologies, Inc. | ESD protection for bipolar-CMOS-DMOS integrated circuit devices |
US7666751B2 (en) * | 2007-09-21 | 2010-02-23 | Semiconductor Components Industries, Llc | Method of forming a high capacitance diode and structure therefor |
US8274301B2 (en) * | 2009-11-02 | 2012-09-25 | International Business Machines Corporation | On-chip accelerated failure indicator |
FR2953062B1 (fr) * | 2009-11-24 | 2011-12-16 | St Microelectronics Tours Sas | Diode de protection bidirectionnelle basse tension |
US8198703B2 (en) * | 2010-01-18 | 2012-06-12 | Freescale Semiconductor, Inc. | Zener diode with reduced substrate current |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5221874A (en) * | 1975-08-11 | 1977-02-18 | Hewlett Packard Yokogawa | Group delay measuring device |
JPS549473A (en) * | 1977-06-22 | 1979-01-24 | Shin Meiwa Ind Co Ltd | Device for storing refuse |
JPS54111290A (en) * | 1978-02-20 | 1979-08-31 | Nec Corp | Semiconductor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
DE2257823A1 (de) * | 1972-11-25 | 1974-06-06 | Philips Patentverwaltung | Halbleiterbauelement mit einer zenerdiode und verfahren zu seiner herstellung |
US4127859A (en) * | 1977-02-25 | 1978-11-28 | National Semiconductor Corporation | Integrated circuit subsurface zener diode |
US4136349A (en) * | 1977-05-27 | 1979-01-23 | Analog Devices, Inc. | Ic chip with buried zener diode |
US4213806A (en) * | 1978-10-05 | 1980-07-22 | Analog Devices, Incorporated | Forming an IC chip with buried zener diode |
US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
JPS5988871A (ja) * | 1982-11-12 | 1984-05-22 | バ−・ブラウン・コ−ポレ−ション | 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法 |
US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
-
1986
- 1986-05-05 US US06/859,454 patent/US4683483A/en not_active Expired - Lifetime
-
1987
- 1987-02-06 JP JP62026184A patent/JPS62263678A/ja active Pending
- 1987-02-12 FR FR8701772A patent/FR2598259B1/fr not_active Expired
- 1987-05-04 DE DE19873714790 patent/DE3714790A1/de not_active Ceased
- 1987-05-05 GB GB8710551A patent/GB2191038B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5221874A (en) * | 1975-08-11 | 1977-02-18 | Hewlett Packard Yokogawa | Group delay measuring device |
JPS549473A (en) * | 1977-06-22 | 1979-01-24 | Shin Meiwa Ind Co Ltd | Device for storing refuse |
JPS54111290A (en) * | 1978-02-20 | 1979-08-31 | Nec Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
FR2598259B1 (fr) | 1989-06-09 |
FR2598259A1 (fr) | 1987-11-06 |
US4683483A (en) | 1987-07-28 |
GB8710551D0 (en) | 1987-06-10 |
DE3714790A1 (de) | 1987-11-12 |
GB2191038A (en) | 1987-12-02 |
GB2191038B (en) | 1990-06-20 |
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