DE69032773D1 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer HalbleitervorrichtungInfo
- Publication number
- DE69032773D1 DE69032773D1 DE69032773T DE69032773T DE69032773D1 DE 69032773 D1 DE69032773 D1 DE 69032773D1 DE 69032773 T DE69032773 T DE 69032773T DE 69032773 T DE69032773 T DE 69032773T DE 69032773 D1 DE69032773 D1 DE 69032773D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3414089A JPH02213123A (ja) | 1989-02-14 | 1989-02-14 | 半導体装置の製造方法 |
JP1074229A JP2773203B2 (ja) | 1989-03-27 | 1989-03-27 | 半導体装置の製造方法 |
JP7423089A JPH02252246A (ja) | 1989-03-27 | 1989-03-27 | 半導体装置の製造方法 |
JP14247089A JPH036865A (ja) | 1989-06-05 | 1989-06-05 | 薄膜半導体装置及びその製造方法 |
JP25939389A JPH03120872A (ja) | 1989-10-04 | 1989-10-04 | 半導体装置及びその製造方法 |
JP30286289A JPH03161977A (ja) | 1989-11-21 | 1989-11-21 | 薄膜半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69032773D1 true DE69032773D1 (de) | 1998-12-24 |
DE69032773T2 DE69032773T2 (de) | 1999-05-27 |
Family
ID=27549717
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69030822T Expired - Fee Related DE69030822T2 (de) | 1989-02-14 | 1990-02-12 | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
DE69030775T Expired - Fee Related DE69030775T2 (de) | 1989-02-14 | 1990-02-12 | Herstelllungsverfahren einer Halbleitervorrichtung |
DE69033736T Expired - Fee Related DE69033736T2 (de) | 1989-02-14 | 1990-02-12 | Verfahren zum Herstellen einer Halbleitervorrichtung |
DE69032773T Expired - Lifetime DE69032773T2 (de) | 1989-02-14 | 1990-02-12 | Verfahren zur Herstellung einer Halbleitervorrichtung |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69030822T Expired - Fee Related DE69030822T2 (de) | 1989-02-14 | 1990-02-12 | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
DE69030775T Expired - Fee Related DE69030775T2 (de) | 1989-02-14 | 1990-02-12 | Herstelllungsverfahren einer Halbleitervorrichtung |
DE69033736T Expired - Fee Related DE69033736T2 (de) | 1989-02-14 | 1990-02-12 | Verfahren zum Herstellen einer Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (3) | US6235563B1 (de) |
EP (4) | EP0598410B1 (de) |
DE (4) | DE69030822T2 (de) |
HK (1) | HK1014293A1 (de) |
SG (1) | SG108807A1 (de) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5691249A (en) * | 1990-03-20 | 1997-11-25 | Nec Corporation | Method for fabricating polycrystalline silicon having micro roughness on the surface |
DE69131570T2 (de) * | 1990-11-16 | 2000-02-17 | Seiko Epson Corp | Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung |
JP3103385B2 (ja) * | 1991-01-25 | 2000-10-30 | 株式会社東芝 | ポリシリコン薄膜半導体装置 |
KR930703707A (ko) * | 1991-01-30 | 1993-11-30 | 죤 죠셉 우르수 | 폴리실리콘 박막 트랜지스터 |
US5298455A (en) * | 1991-01-30 | 1994-03-29 | Tdk Corporation | Method for producing a non-single crystal semiconductor device |
EP0499979A3 (en) | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
US5576222A (en) * | 1992-01-27 | 1996-11-19 | Tdk Corp. | Method of making a semiconductor image sensor device |
EP0566838A3 (en) * | 1992-02-21 | 1996-07-31 | Matsushita Electric Ind Co Ltd | Manufacturing method of thin film transistor |
US6544825B1 (en) * | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6413805B1 (en) * | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
EP0923138B1 (de) | 1993-07-26 | 2002-10-30 | Seiko Epson Corporation | Dünnschicht-Halbleiteranordnung, ihre Herstellung und Anzeigsystem |
KR100333153B1 (ko) * | 1993-09-07 | 2002-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
JP3599290B2 (ja) * | 1994-09-19 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体装置 |
FR2728390A1 (fr) * | 1994-12-19 | 1996-06-21 | Korea Electronics Telecomm | Procede de formation d'un transistor a film mince |
TW303526B (de) * | 1994-12-27 | 1997-04-21 | Matsushita Electric Ind Co Ltd | |
US7348227B1 (en) | 1995-03-23 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JPH098313A (ja) * | 1995-06-23 | 1997-01-10 | Sharp Corp | 半導体装置の製造方法および液晶表示装置の製造方法 |
US6929985B2 (en) * | 1995-07-27 | 2005-08-16 | Taisei Corporation | Air filter, method of manufacturing air filter, local facility, clean room, treating agent, and method of manufacturing filter medium |
US6027960A (en) * | 1995-10-25 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and laser annealing device |
JP3424891B2 (ja) * | 1996-12-27 | 2003-07-07 | 三洋電機株式会社 | 薄膜トランジスタの製造方法および表示装置 |
JP3830623B2 (ja) * | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
US7248232B1 (en) * | 1998-02-25 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Information processing device |
JP3141940B2 (ja) * | 1998-05-08 | 2001-03-07 | 日本電気株式会社 | カラーリニアイメージセンサ |
JP3483484B2 (ja) * | 1998-12-28 | 2004-01-06 | 富士通ディスプレイテクノロジーズ株式会社 | 半導体装置、画像表示装置、半導体装置の製造方法、及び画像表示装置の製造方法 |
KR100412743B1 (ko) * | 1999-03-30 | 2003-12-31 | 세이코 엡슨 가부시키가이샤 | 박막 트랜지스터의 제조 방법 |
US20030148566A1 (en) * | 2000-04-11 | 2003-08-07 | Takashi Noguchi | Production method for flat panel display |
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GB2406709A (en) * | 2000-12-04 | 2005-04-06 | Vortek Ind Ltd | Heat-treating methods and systems |
US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
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US6306697B1 (en) * | 2001-01-05 | 2001-10-23 | United Microelectronics Corp. | Low temperature polysilicon manufacturing process |
US7151017B2 (en) * | 2001-01-26 | 2006-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
DE60141225D1 (de) * | 2001-02-19 | 2010-03-18 | Ibm | Verfahren zur herstellung einer dünnfilmtransistorstruktur |
US6426246B1 (en) * | 2001-02-21 | 2002-07-30 | United Microelectronics Corp. | Method for forming thin film transistor with lateral crystallization |
US6933566B2 (en) * | 2001-07-05 | 2005-08-23 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
US6852575B2 (en) * | 2001-07-05 | 2005-02-08 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
US6638776B2 (en) * | 2002-02-15 | 2003-10-28 | Lsi Logic Corporation | Thermal characterization compensation |
GB0210065D0 (en) * | 2002-05-02 | 2002-06-12 | Koninkl Philips Electronics Nv | Electronic devices comprising bottom gate tft's and their manufacture |
DE10229055A1 (de) * | 2002-06-28 | 2004-01-29 | Siemens Ag | IC auf Quarzsubstrat |
KR20040016696A (ko) * | 2002-08-19 | 2004-02-25 | 삼성전자주식회사 | 반도체장치의 전극형성방법 및 장치 |
US6689646B1 (en) * | 2002-11-14 | 2004-02-10 | Sharp Laboratories Of America, Inc. | Plasma method for fabricating oxide thin films |
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KR101293567B1 (ko) * | 2006-02-21 | 2013-08-06 | 삼성디스플레이 주식회사 | 표시장치의 제조방법 |
US7687334B2 (en) * | 2006-03-23 | 2010-03-30 | Board Of Trustees Of The University Of Arkansas | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon |
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CN101926007B (zh) * | 2008-01-25 | 2013-04-17 | 夏普株式会社 | 半导体元件及其制造方法 |
TWI355085B (en) * | 2008-03-14 | 2011-12-21 | Chunghwa Picture Tubes Ltd | Thin film transistor and fabricating method thereo |
KR101610269B1 (ko) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
US20150263201A1 (en) * | 2008-05-28 | 2015-09-17 | Solar-Tectic Llc | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
DE102008053955B4 (de) | 2008-10-31 | 2010-10-21 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit Verbesserung der Verspannungsübertragung durch eine späte Gaterekristallisierung und Transistor |
WO2010109873A1 (ja) * | 2009-03-25 | 2010-09-30 | 株式会社Sumco | シリコンウェーハおよびその製造方法 |
KR101079027B1 (ko) * | 2009-07-07 | 2011-11-02 | 한국철강 주식회사 | 광기전력 장치의 제조 방법 |
KR20120127009A (ko) * | 2011-05-13 | 2012-11-21 | 에스케이하이닉스 주식회사 | 반도체장치 제조 방법 |
KR101348991B1 (ko) | 2012-01-27 | 2014-01-10 | 한국교통대학교산학협력단 | 비정질 실리콘 박막의 결정화 방법 및 이를 이용한 다결정 실리콘 태양전지의 제조방법 |
DE102013102074A1 (de) | 2013-03-04 | 2014-09-04 | Schmid Vacuum Technology Gmbh | Anlage und Verfahren zur Beschichtung von Substraten mit polykristallinem Silizium |
US9818606B2 (en) * | 2013-05-31 | 2017-11-14 | Applied Materials, Inc. | Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture |
US9287287B2 (en) * | 2013-12-18 | 2016-03-15 | Macronix International Co., Ltd. | Semiconductor device including multi-layer structure |
CN107851559B (zh) | 2015-06-26 | 2022-04-26 | 东京毅力科创株式会社 | 气相蚀刻系统和方法 |
TWI610361B (zh) | 2015-06-26 | 2018-01-01 | 東京威力科創股份有限公司 | 具有可控制的含矽抗反射塗層或矽氮氧化物相對於不同薄膜或遮罩之蝕刻選擇性的氣相蝕刻 |
KR101757816B1 (ko) * | 2015-09-30 | 2017-07-14 | 세메스 주식회사 | 기판 처리 방법 및 장치 |
US10515800B2 (en) * | 2018-01-23 | 2019-12-24 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Solid phase crystallization method and manufacturing method of low-temperature poly-silicon TFT substrate |
US11908715B2 (en) | 2018-07-05 | 2024-02-20 | Lam Research Corporation | Dynamic temperature control of substrate support in substrate processing system |
CN113454755A (zh) * | 2019-02-19 | 2021-09-28 | 应用材料公司 | 多晶硅衬垫 |
CN112750682B (zh) * | 2019-10-30 | 2022-12-30 | 夏泰鑫半导体(青岛)有限公司 | 存储器件的制造方法及沉积半导体材料于基板的方法 |
CN111653474A (zh) * | 2020-05-19 | 2020-09-11 | 上海华虹宏力半导体制造有限公司 | 多晶硅薄膜成膜方法 |
CN113228282B (zh) * | 2021-03-29 | 2023-12-05 | 长江存储科技有限责任公司 | 用于增大半导体器件中的多晶硅晶粒尺寸的阶梯式退火工艺 |
CN115172518A (zh) * | 2022-07-08 | 2022-10-11 | 酒泉正泰新能源科技有限公司 | 一种太阳能电池的多次氧化扩散方法、制备方法 |
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-
1990
- 1990-02-12 EP EP93118614A patent/EP0598410B1/de not_active Expired - Lifetime
- 1990-02-12 DE DE69030822T patent/DE69030822T2/de not_active Expired - Fee Related
- 1990-02-12 EP EP93118615A patent/EP0608503B1/de not_active Expired - Lifetime
- 1990-02-12 DE DE69030775T patent/DE69030775T2/de not_active Expired - Fee Related
- 1990-02-12 EP EP90102710A patent/EP0383230B1/de not_active Expired - Lifetime
- 1990-02-12 EP EP93118613A patent/EP0598409B1/de not_active Expired - Lifetime
- 1990-02-12 SG SG9601960A patent/SG108807A1/en unknown
- 1990-02-12 DE DE69033736T patent/DE69033736T2/de not_active Expired - Fee Related
- 1990-02-12 DE DE69032773T patent/DE69032773T2/de not_active Expired - Lifetime
-
1991
- 1991-11-07 US US07/790,107 patent/US6235563B1/en not_active Expired - Lifetime
-
1998
- 1998-12-24 HK HK98115536A patent/HK1014293A1/xx not_active IP Right Cessation
-
2000
- 2000-05-10 US US09/568,917 patent/US6403497B1/en not_active Expired - Fee Related
-
2002
- 2002-05-09 US US10/143,102 patent/US20020132452A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE69030775D1 (de) | 1997-07-03 |
SG108807A1 (en) | 2005-02-28 |
US6403497B1 (en) | 2002-06-11 |
EP0598409B1 (de) | 1998-11-18 |
EP0383230B1 (de) | 1997-05-28 |
EP0383230A2 (de) | 1990-08-22 |
EP0598410A1 (de) | 1994-05-25 |
US20020132452A1 (en) | 2002-09-19 |
EP0598409A1 (de) | 1994-05-25 |
EP0383230A3 (de) | 1990-12-19 |
US6235563B1 (en) | 2001-05-22 |
DE69032773T2 (de) | 1999-05-27 |
DE69033736T2 (de) | 2001-10-25 |
EP0608503A3 (de) | 1995-05-24 |
DE69030775T2 (de) | 1997-11-13 |
DE69030822T2 (de) | 1997-11-27 |
EP0608503B1 (de) | 1997-05-28 |
DE69030822D1 (de) | 1997-07-03 |
EP0608503A2 (de) | 1994-08-03 |
EP0598410B1 (de) | 2001-05-23 |
DE69033736D1 (de) | 2001-06-28 |
HK1014293A1 (en) | 1999-09-24 |
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